Fast-switching insulated gate transistors

Insulated gate transistors (IGT's) with high-speed gate turn-off capability have been developed by using electron irradiation to reduce the minority-carrier lifetime in the drift region. Gate turnoff times as low as 200 ns have been achieved. These devices have been found to offer a unique advantage in the ability to tradeoff conduction and switching losses which allows optimization of device characteristics for each application.     

Pentacene-based organic thin-film transistors

Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm²/V-s and on/off current ratio larger than 10⁸; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these and most other organic TFT's have an undesirably large subthreshold slope. We show here that the large subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with subthreshold slope similar to amorphous silicon devices are possible     

All-printed low-voltage organic transistors

All-printed low-voltage organic transistors were manufactured on a plastic substrate and measured in normal room atmosphere. All electrodes were ink-jet printed, while the homogeneous semiconductor and insulator layers were subsequently applied by the reverse gravure coating technique. No destructive effects from the rough plastic substrate or the printed silver source and drain electrodes were observed. Changes in the transistor characteristics after 48 days of ageing in room atmosphere were mainly attributed to a reduced conductivity of the polymer gate electrode.     

Water-gated organic nanowire transistors

We gated both p-type, and n-type, organic nanowire (NW) films with an aqueous electric double layer (EDL) in thin-film transistor (TFT) architectures. For p-type NWs, we used poly(3-hexylthiophene) (P3HT) NWs grown via two different routes. Both can be gated with water, resulting in TFTs with threshold lower than for conventionally cast P3HT films under the same gating conditions. However, TFT drain currents are lower for NWs than for conventional P3HT films, which agrees with similar observations for ‘dry’ gated TFTs. For n-type NWs, we have grown ‘nanobelts’ of poly(benzimidazobenzophenanthroline) (BBL) by a solvent/non-solvent mixing route with later displacement of the solvent, and dispersion in a non-solvent. Water-gating such films initially failed to give an observable drain current. However, BBL nanobelts can be gated with the aprotic solvent acetonitrile, giving high n-type drain currents, which are further increased by adding salt. Remarkably, after first gating BBL NW films with acetonitrile, they can then be gated by water, giving very high drain currents. This behaviour is transient on a timescale of minutes. We believe this observation is caused by a thin protective acetonitrile film remaining on the nanobelt surface.     

High-performance bottom electrode organic thin-film transistors

Pentacene-based organic field effect transistors (FETs) exhibit enormous potential as active elements in a number of applications. One significant obstacle to commercial application remains: no completely lithographic process exists for forming high-performance devices. Processing constraints prevent electrodes from being lithographically patterned once the semiconductor is deposited, but depositing the electrodes before the semiconductor leads to low-performance transistors. By using self-assembled monolayers (SAMs) to change the surface energy of the metal electrodes and morphology of the pentacene subsequently grown on the electrodes, high-performance transistors may be formed using a process compatible with lithographic definition of the source and drain electrodes     

A two-dimensional simulation of organic transistors

In this paper, we analyze the operation of organic thin-film transistors (TFT's) using two-dimensional (2-B) numerical simulation to: (1) validate the use of simple MOSFET theory to describe the above-threshold behavior; (2) clarify the subthreshold characteristics, and short-channel effects; and (3) illustrate the operation of organic bilayer devices. Our analysis clarifies a number of issues that can help in device design. We also point out differences between the material parameters used in Si-MOSFET and organic FET simulation, and discuss the circumstances under which a semiconductor device simulator can be used for the simulation of organic transistors     

Multicolor nanofiber based organic light-emitting transistors

Self-assembled, molecular crystalline nanofibers form microscale light-emitters for future nanophotonic applications. Such organic nanofibers exhibit many interesting optoelectronic properties, including polarized photo- and electroluminescence, waveguiding, and emission color tunability. Surface-grown nanofibers from two different molecules are implemented in an organic field-effect transistor platform by a double roll-printing scheme. Roll-printing multiple types of nanofibers onto the same device provides a fast and simple alternative to multilayer devices. The combination of nanofibers made from para-hexaphenylene and 5,5′-di-4-biphenyl-2,2′-bithiophene results in a nanofiber based organic light-emitting transistor (OLET) which emits both blue and green light. A comparison of measured electrical transport and electroluminescence (EL) properties results in a correlation between the threshold voltage for transport and the onset voltage for EL emission.     

Theory of organic field effect transistors

Field effect transistors with an organic material as active layer are at present essentially used to determine the mobilities in these materials. Until now, in analysing the measured current characteristics, only the simplest (Shockley) model has been used which accounts neither for this type of thin film transistor (TFT), which operates in depletion and accumulation, nor for the nature of the carriers. Starting from two-dimensional simulations for the analogous silicon TFT, we have developed an analytical model for the TFT that accounts for several peculiarities of the current characteristics of this type of transistor. In addition, a first modification has been developed which describes the situation when the charged states are polarons and bipolarons, as is the case in organic materials. Applications to published experimental current characteristics show that a general reanalysis is needed. Copyright © 1998 John Wiley & Sons, Ltd.     

Gate-planarized organic polymer thin film transistors

We report in this paper the fabrication and characterization of a new gate-planarized organic polymer thin-film transistor (GP OP-TFT). We describe in detail the effects of the measurement procedure on the GP OP-TFT electrical characteristics and extracted parameters and show that it is extremely critical to carefully control the electrical measurement conditions to obtain accurate and meaningful results, before any material optimization is undertaken. We also describe the importance of normalization of electrical characteristics and extracted parameters for a proper comparison of different devices. Finally, we report and analyze the gate voltage and channel length dependence of the TFT field-effect mobility.     

Non-conventional metallic electrodes for organic field-effect transistors

We study micrometer-sized organic field-effect transistors with either Pd or NiFe metallic electrodes. Neither of these materials is commonly used in organic electronics applications, but they could prove to be particularly advantageous in certain niche applications such as organic spintronics. Using organic semiconductors with different carrier transport characteristics as active layer, namely n-type C60 fullerene and p-type Pentacene, we prove that Pd (NiFe) is a very suitable electrode for p- (n-) type semiconductors. In particular, we characterized devices with channel lengths in the order of the micrometer, a distance which has allowed us to evaluate the electronic behavior in a regime where the interfacial problems become predominant and it is possible to reach elevated longitudinal electric fields. Our experimental results agree well with a simple model based on rigid energy levels.     

High-performance solution-processed organic transistors with electroless-plated electrodes

Electroless-plated gold and platinum films are used as source and drain electrodes in high-performance solution-processed organic field-effect transistors (OFETs), representing a promising large-area, near-room-temperature and vacuum-free technique to form low-resistance metal-to-semiconductor interfaces in ambient atmosphere. Developing non-displacement conditions using a Pt-colloidal catalyst for soft electroless plating, the electrodes are deposited on crystallized thin films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C₁₀-DNTT) without significant damage to the semiconductor material. The top-contact OFETs show remarkable performance, with a mobility of 6.0 cm² V^?1 s^?1. The method represents a practical fabrication technique to mass-produce circuitry arrays of nearly best-performing OFETs for the printed electronics industry.     

Phospholipid film in electrolyte-gated organic field-effect transistors

A totally innovative electrolyte-gated field effect transistor, embedding a phospholipid film at the interface between the organic semiconductor and the gating solution, is described. The electronic properties of OFETs including a phospholipid film are studied in both pure water and in an electrolyte solution and compared to those of an OFET with the organic semiconductor directly in contact with the gating solution. In addition, to investigate the role of the lipid layers in the charge polarization process and quantify the field-effect mobility, impedance spectroscopy was employed. The results indicate that the integration of the biological film minimizes the penetration of ions into the organic semiconductor thus leading to a capacitive operational mode as opposed to an electrochemical one. The OFETs operate at low voltages with a field-effect mobility in the 10⁻³ cm² V⁻¹ s⁻¹ range and an on/off current ratio of 10³. This achievement opens perspectives to the development of FET biosensors potentially capable to operate in direct contact with physiological fluids.     

Printed organic transistors for ultra-low-cost RFID applications

Printed electronics provides a potential pathway toward the realization of ultra-low-cost radio frequency identification (RFID) tags for item-level tracking of consumer goods. Here, we report on our progress in developing materials and processes for the realization of printed transistors for low-cost RFID applications. Using inkjet printing of novel conductors, dielectrics, and organic semiconductors, we have realized printed transistors with mobilities >10/sup -1/cm/sup 2//V-s. AC performance of these devices is adequate for 135-kHz RFID, and, with further optimization, 13.56-MHz RFID appears to be within reach. We review the performance of these devices, and discuss optimization strategies for achieving the ultimate performance goals requisite for realizing ultra-low-cost printed RFID.     

Quasistatic compact modelling of organic thin-film transistors

A compact model for the quasistatic charge and capacitances in organic thin-film transistor (OTFT) is derived and implemented for the simulation of organic circuits. A model for organic ring oscillator circuits is also developed. Comparing the models to experimental data, the simulation qualitatively reproduces the experimental data for frequency, amplitudes and waveforms. The simulation results indicate that the quasistatic model underestimates the capacitances in organic circuits, and it is shown that the geometrical capacitances originating from layout and gate overlap dominate in organic ring oscillators.     

Electrical characteristics of ink-jet printed, all-polymer electrochemical transistors

We report on the fabrication and characterization of inkjet-printed, all-Organic ElectroChemical Transistors (OECTs) entirely realized by a conducting polymer, namely poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT:PSS). The transistors utilized saline as the electrolyte and exhibited output characteristics typical for operation in depletion regime. The transfer characteristics could be tuned on the basis of device geometry, with the ratio between the area of the channel and the area of the gate electrode determining the transconductance. This work paves the road for the low-cost, print-on-demand fabrication of circuits for applications in bio-sensors and disposable electronics.     

Fast-switching analog PLL with finite-impulse response

This paper describes a method for speeding up the linear settling response of integer-N phase-locked loops. Extending the discrete-time model of the PLL first proposed by Gardner, simple design rules are derived which guarantee accurate frequency settling in few reference cycles. Simulations show that the proposed design technique improves up to six times the settling time of a conventional design. The stability margins and the noise behavior of the proposed system are analyzed.     

High-performance organic field-effect transistors with binary ionic liquids

High-performance rubrene single-crystal field-effect transistors are developed with binary ionic liquid electrolytes used for gating. Inclusion of small amount of inorganic salts in the ionic liquids enhances the degree of dissociation for the organic ions and accelerates formation of the electric-double-layers in response to the gate voltage. High carrier mobility of 2.9 cm²/Vs is achieved in the rubrene single-crystal transistors with the mixture ionic liquid. In addition to the advantage of the low-voltage operation due to concentrated field in ultra-thin electric-double-layers, drastically increased capacitance at above 100 Hz makes the technique of the ionic liquid gating more attractive for fast-switching devices.     

Gate-bias assisted charge injection in organic field-effect transistors

The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the corresponding gate field is perpendicular to the channel current. In coplanar OFETs, injection barriers up to 1 eV can be surmounted by increasing the gate bias, enabling extraction of bulk transport parameters in this regime. For staggered transistors, however, the injection is gate-assisted only until the gate bias is screened by the accumulation channel opposite to the source contact. The gate-assisted injection is supported by two-dimensional numerical charge transport simulations that reproduce the gate-bias dependence of the contact resistance and the typical S-shaped output curves as observed for OFETs with high injection barriers.     

Multi layer structure for encapsulation of organic transistors

A novel encapsulation structure to protect organic thin film transistors against oxygen and moisture contaminations is presented. The sealing architecture is comprised of three-layers: aluminum oxide deposited by means of Atomic Layer Deposition is the actual capping layer, while cross-linked poly-vinylphenol and poly-vinylphenol prevent the contamination/damage of the underlying organic semiconductor during the oxide growth. The process has negligible impact on device mobility but it enables poly-3-hexylthiophene based transistors to operate with an on/off ratio in excess of 10³ even after 100 days of continuous ambient air exposure.     

A lithographic process for integrated organic field-effect transistors

This paper reports a photolithographic process for fabricating organic field-effect transistors which provides two layers of metal with arbitrary via placement, and optionally allows for subtractive lithographic patterning of the transistor active layer. The demonstrated pentacene transistors have a field-effect mobility of 0.1/spl plusmn/0.05 cm/sup 2//(V/spl middot/s). Parylene-C is used both as the gate dielectric and an encapsulation layer which allows for subtractive lithographic patterning. Also demonstrated is a PMOS inverter without level shifting circuitry and level-restoring V/sub High/ and V/sub Low/. This work demonstrates a high definition, multilayer, integrated photolithographic process which creates organic field effect transistors suitable for use in integrated circuit applications such as a display backplanes.