Kinetics of interfacial reaction between eutectic Sn-Pb solder and Cu/Ni/Pd metallizations

The interfacial microstructure and the kinetics of interfacial reaction between the eutectic Sn-Pb solder and electroplated Ni/Pd on Cu substrate (Cu/Ni/NiPd/Ni/Pd) were studied both in the liquid- and solid-state of the solder. The liquidstate reaction was carried out at 200°C, 225°C, and 250°C for 30 s, 60 s, 150 s, and 300 s at each temperature. The solid-state aging was carried out at 125°C for up to 43 days. The interfacial microstructure was characterized by imaging and energy dispersive x-ray analysis in scanning electron microscope. Depending on the thickness of the Pd-layer, both PdSn₄ and PdSn₃ phases were observed near the solder-substrate interface. These results were correlated with the initial thickness of the Pd-layer and the diffusion path in the calculated Pd-Pb-Sn isothermal sections. For the aforementioned isothermal reactions, only one Ni-bearing intermetallic (Ni₃Sn₄) was observed at the solder-substrate interface. The presence of Ni₃Sn₄ intermetallic was consistent with the expected diffusion path based on the calculated Ni-Pb-Sn isothermal sections. Selective etching of solder revealed that PdSn₄ and PdSn₃ had a faceted rod morphology, and Ni₃Sn₄ had a faceted scallop morphology which gave rise to rugged Ni₃Sn₄-solder interface. Segregation of Pb on the facets of PdSn₄ and PdSn₃ was also observed. The growth kinetics of the Ni₃Sn₄ intermetallic layer at the solder-substrate interface was analyzed using an Arrhenius-type of equation. In the thickness regime of 0.16 to 1.2 μm, the growth kinetics yielded a time exponent n=3.1, an apparent activation energy of 9260 J/mol both in the liquid- and solid-state of the solder, and a temperature dependent pre-exponential factor. The latter was attributed to the presence of one or more phases ahead of the growing layer.     

Influence of microstructure on fatigue crack growth behavior of Sn-Ag solder interfaces

The relationship between microstructure and fatigue crack growth behavior was examined at Sn-Ag solder interfaces on copper and electroless-nickel metallizations. On copper metallization, the solder interface was lined with a coarse Ag₃Sn intermetallic phase in addition to the Cu₆Sn₅ intermetallic and the adjacent solder alloy contained nodular Ag₃Sn phase. This interfacial microstructure was shown to result in inferior fatigue resistance, with the fatigue crack path following the interfacial Ag₃Sn intermetallic phase. In contrast, the solder interface on the electroless-nickel metallization was covered with a thin layer of Ni₃Sn₄ intermetallic phase, and the solder microstructure was composed of fine needles of Ag₃Sn phase dispersed in the Sn-rich matrix. This solder interface was found to be significantly more resistant to fatigue than the copper/Sn-Ag solder interface.     

The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si₃N₄/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni_1−x,Cu_x)₃Sn₄ intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni_1−x,Cu_x)₃Sn₄ IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu_1−y,Ni_y)₆Sn₅ IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu_1−y,Ni_y)₆Sn₅ IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 10¹⁶−10¹⁷ atoms/cm²sec in both the eutectic Sn-Ag and Sn-Pb systems.     

Characterization of the growth of intermetallic interfacial layers of Sn-Ag and Sn-Pb eutectic solders and their composite solders on Cu substrate during isothermal long-term aging

Single shear lap joints were made with four different solders, Sn-Pb and Sn-Ag eutectic solders, and their composites containing about 20 vol.% in-situ Cu6Sn5 intermetallic phases about 3–8 micrometers in diameter. Two sets of experiments were performed: In the first set, all of the above four solder joints were aged at 150°C for periods ranging to 5000 h and the intermetallic growth was monitored periodically. In the second set, each of the above four solder joints was aged at five different temperatures for 4000 h. The interfacial layers between solders and the Cu substrate were examined using optical and scanning electron microscopy. The growth kinetics of intermetallic interfacial layers formed between solder and Cu substrate was characterized. The effect of in-situ Cu₆Sn₅ intermetallic phases on the growth rate is discussed. The growth rate of the intermetallic layers in the eutectic Sn-Pb composite was slower for the first 150 h as compared to the eutectic Sn-Pb non-composite. The growth rate of the intermetallic layers were similar for both the eutectic Sn-Ag and eutectic Sn-Ag composite throughout the aging duration. The activation energies for Cu₆Sn₅ layer growth for the eutectic Sn-Pb and Sn-Ag solder joints are evaluated to be 111 kJ/mol and 116 kJ/mol, respectively. The eutectic Sn-Pb and Sn-Ag composite solder joints exhibit higher activation energies of 161 kJ/mol and 203 kJ/mol.     

The reactions between electroless Ni-Cu-P Deposit and 63Sn-37Pb flip chip solder bumps during reflow

This study investigates the interfacial reactions between electroless Ni-Cu-P deposit and 63Sn-37Pb solder bumps under various reflow conditions. The morphology of the intermetallic compounds formed at the Ni-Cu-P/Sn-Pb interface changes with respect to reflow cycle, reflow temperature, and reflow time. The (Ni,Cu)₃Sn₄ compounds with three different morphologies of fine grain, whisker, and polygonal grain form at the Ni-Cu-P/Sn-Pb interface after reflow at 220°C for 15 s. The whisker-shape and polygonal grains detach from the Ni-Cu-P deposit into the Sn-Pb solder during multiple reflows. The (Ni,Cu)₃Sn₄ compound grows rapidly when the reflow temperature is above the Ni-Sn eutectic temperature, 231°C. A continuous (Ni,Cu)₃Sn₄ layer forms after reflow at 220°C for 10 min. A 4.5 μm Ni-Cu-P deposit prevents the interdiffusion of Sn and Al atoms across the Ni-Cu-P deposit after 10 reflow cycles at 220°C for 15 s and after reflow at 220°C for 10 min.     

Interfacial fracture toughness of Pb-free solders

Increasing environmental concerns and pending government regulations have pressured microelectronic manufacturers to find suitable alternatives to Pb-bearing solders traditionally used in electronics packaging. Over recent years, Sn-rich solders have received significant attention as suitable replacements for Pb-bearing solders. Understanding the behavior of intermetallics in Sn-rich solders is of particular concern as the microelectronics industry progresses towards Pb-free packaging. The formation of intermetallic compounds results from the reaction of the solder with the metallization on the substrate in the electronic package. While the presence of the intermetallic is an indication of good wetting, excessive growth of the intermetallic can have a dramatically adverse effect on the toughness and reliability of the solder joint. Understanding their fracture behavior will lend insight to their reliability under mechanical and thermomechanical strains.We investigated the intermetallic compound growth associated with Sn-0.7Cu and Sn-4.0Ag-0.5Cu solders on Ni-Au, Ni-Pd, and Cu substrates. (Ni,Cu)₃Sn₄ was present at the Ni interface for both solders but was coarser in the case of Ni-Pd. Cu₆Sn₅ and Cu₃Sn were observed for both solder types. The Cu₃Sn layer was similar in thickness and appearance for both solders, but the Cu₆Sn₅ was smoother and rounder in the case of Sn-0.7Cu. Additional time above liquidus resulted in growth of the Cu₆Sn₅ layer and eventual spalling of the IMC grains. The effect of the intermetallic on the toughness (K_Q) of the solder joint was investigated using a modified compact tension specimen. Typical failure modes included bulk solder failure, intergranular separation, and intermetallic fracture, or cleavage. In some cases, additional time above solder liquidus was used to shift the dominant failure mode from that dominated by the bulk solder to interfacial delamination through the intermetallics. Solder joint fracture toughness was different between Ni-Sn and Cu-Sn interfacial intermetallics and was also affected by the relative intermetallic thickness. The relationship between solder and intermetallic microstructure and mechanical properties is discussed.     

Metallurgical reaction of the Sn-3.5Ag solder and Sn-37Pb solder with Ni/Cu under-bump metallization in a flip-chip package

Several international legislations recently banned the use of Pb because of environmental concerns. The eutectic Sn-Ag solder is one of the promising candidates to replace the conventional Sn-Pb solder primarily because of its excellent mechanical properties. In this study, interfacial reaction of the eutectic Sn-Ag and Sn-Pb solders with Ni/Cu under-bump metallization (UBM) was investigated with a joint assembly of solder/Ni/Cu/Ti/Si₃N₄/Si multilayer structures. After reflows, only one (Ni,Cu)₃Sn₄ intermetallic compound (IMC) with faceted and particlelike grain feature was found between the solder and Ni. The thickness and grain size of the IMC increased with reflow times. Another (Cu,Ni)₆Sn₅ IMC with a rod-type grain formed on (Ni,Cu)₃Sn₄ in the interface between the Sn-Pb solder and the Ni/Cu UBM after more than three reflow times. The thickness of the (Ni,Cu)₃Sn₄ layer formed in the Sn-Pb system remained almost identical despite the numbers of reflow; however, the amounts of (Cu,Ni)₆Sn₅ IMC increased with reflow times. Correlations between the IMC morphologies, Cu diffusion behavior, and IMC transformation in these two solder systems will be investigated with respect to the microstructural evolution between the solders and the Ni/Cu UBM. The morphologies and grain-size distributions of the (Ni,Cu)₃Sn₄ IMC formed in the initial stage of reflow are crucial for the subsequent phase transformation of the other IMC.     

Mechanism of interfacial reaction for the Sn-Pb solder bump with Ni/Cu under-bump metallization in flip-chip technology

Nickel-based under-bump metallization (UBM) has been widely used in flip-chip technology (FCT) because of its slow reaction rate with Sn. In this study, solder joints after reflows were employed to investigate the mechanism of interfacial reaction between the Ni/Cu UBM and eutectic Sn-Pb solder. After deliberate quantitative analysis with an electron probe microanalyzer (EPMA), the effect of Cu content in solders near the interface of the solder/intermetallic compound (IMC) on the interfacial reaction could be probed. After one reflow, only one layered (Ni_1−x,Cu_x)₃Sn₄ with homogeneous composition was found between the solder bump and UBM. However, after multiple reflows, another type of IMC, (Cu_1−y,Ni_y)₆Sn₅, formed between the solder and (Ni_1−x,Cu_x)₃Sn₄. It was observed that if the concentration of Cu in the solders near the solder/IMC interface was higher than 0.6 wt.%, the (Ni_1−x,Cu_x)₃Sn₄ IMC would transform into the (Cu_1−y,Ni_y)₆Sn₅ IMC. The Cu contents in (Ni_1−x,Cu_x)₃Sn₄ were altered and not uniformly distributed anymore. With the aid of microstructure evolution, quantitative analysis, elemental distribution by x-ray color mapping, and related phase equilibrium of Sn-Ni-Cu, the reaction mechanism of interfacial phase transformation between the Sn-Pb solder and Ni/Cu UBM was proposed.     

A comparative study of the kinetics of interfacial reaction between eutectic solders and Cu/Ni/Pd metallization

A comparative study of the kinetics of interfacial reaction between the eutectic solders (Sn-3.5Ag, Sn-57Bi, and Sn-38Pb) and electroplated Ni/Pd on Cu substrate (Cu/Ni/NiPd/Ni/Pd) was performed. The interfacial microstructure was characterized by imaging and energy dispersive x-ray analysis in scanning electron microscope (SEM). For a Pd-layer thickness of less than 75 nm, the presence or the absence of Pd-bearing intermetallic was found to be dependent on the reaction temperature. In the case of Sn-3.5Ag solder, we did not observe any Pd-bearing intermetallic after reaction even at 230°C. In the case of Sn-57Bi solder the PdSn₄ intermetallic was observed after reaction at 150°C and 180°C, while in the case of Sn-38Pb solder the PdSn₄ intermetallic was observed after reaction only at 200°C. The PdSn₄ grains were always dispersed in the bulk solder within about 10 μm from the solder/substrate interface. At higher reaction temperatures, there was no Pd-bearing intermetallic due to increased solubility in the liquid solder. The presence or absence of Pd-bearing intermetallic was correlated with the diffusion path in the calculated Pd-Sn-X (X=Ag, Bi, Pb) isothermal sections. In the presence of unconsumed Ni, only Ni₃Sn₄ intermetallic was observed at the solder-substrate interface by SEM. The presence of Ni₃Sn₄ intermetallic was consistent with the expected diffusion path based on the calculated Ni-Sn-X (X=Ag, Bi, Pb) isothermal sections. Selective etching of solders revealed that Ni₃Sn₄ had a faceted scallop morphology. Both the radial growth and the thickening kinetics of Ni₃Sn₄ intermetallic were studied. In the thickness regime of 0.14 μm to 1.2 μm, the growth kinetics always yielded a time exponent n >3 for liquid-state reaction. The temporal law for coarsening also yielded time exponent m >3. The apparent activation energies for thickening were: 16936J/mol for the Sn-3.5Ag solder, 17804 J/mol for the Sn-57Bi solder, and 25749 J/mol for the Sn-38Pb solder during liquid-state reaction. The corresponding activation energies for coarsening were very similar. However, an apparent activation energy of 37599 J/mol was obtained for the growth of Ni₃Sn₄ intermetallic layer during solid-state aging of the Sn-57Bi/substrate diffusion couples. The kinetic parameters associated with thickening and radial growth were discussed in terms of current theories.     

Effect of Bi Segregation on the Asymmetrical Growth of Cu-Sn Intermetallic Compounds in Cu/Sn-58Bi/Cu Sandwich Solder Joints During Isothermal Aging

An asymmetrical interfacial microstructure was observed at both top and bottom interfaces of Cu/Sn-58Bi/Cu solder joints after isothermal aging at 120°C for different times. The asymmetrical interfacial microstructure resulted from asymmetrical Bi segregation, which was attributed to the density difference between Bi and Sn atoms. Bi atoms were driven to the bottom solder/Cu interface by gravity during the liquid soldering procedure since Bi atoms are more massive than Sn atoms. With increasing aging time, Bi accumulated at the bottom Cu₃Sn/Cu interface and the Bi segregation enhanced Cu₆Sn₅ intermetallic compound growth, blocked Sn transport to the Cu₃Sn intermetallic compound, and facilitated growth of the Cu₆Sn₅, based on the measured thicknesses of intermetallic compounds (including Cu₆Sn₅ and Cu₃Sn) at both bottom and top interfaces for Cu/Sn-58Bi/Cu sandwich joints under the same aging process.     

Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Eutectic solder balls (63Sn-37Pb) joined to Cu pads with an Au/Ni metallization have been widely used in wafer-level chip-size package (WLCSP) technology for providing electrical and mechanical interconnections between components. However, some reliability issues must be addressed regarding the intermetallic compounds (IMCs). The formation of a brittle IMC layer between the solder/Cu pad interface impacts considerably upon the solder-ball shear strength. In addition, it will degrade the long-term operating reliability of the WLCSP. This study investigates, by means of experiments, the growth of the IMC layer under isothermal aging for the eutectic Sn-Pb solder reflowed on a Cu pad with an Au/Ni metallization. Forming the Cu pad with an Au/Ni metallization was achieved by a simple semiconductor-manufacturing process. The effects of the intermetallic layer on solder-ball shear strength were examined for various parameters, including the thickness of the Au layer, solder-ball size, and the diameter of the Cu pad. Experimental results indicate that two IMC layers, Au_0.5Ni_0.5Sn₄ and Ni₃Sn₄, form at the solder/Cu pad interface after aging. The Au_0.5Ni_0.5Sn₄ intermetallic layer dominates the total thickness of the IMC layer and grows with aging time while the solder-ball shear strength decreases after aging. The degradation of the solder-ball shear strength was found to be caused mainly by the formation of the Au_0.5Ni_0.5Sn₄ layer. The experimental results established that a thinner Au layer on Cu pad can effectively control the degradation of solder-ball shear strength, and this is especially true for smaller ball sizes.     

Microstructure and shear strength evolution of SnAg/Cu surface mount solder joint during aging

The effect of aging at 150°C on the microstructure and shear strength of SnAg/Cu surface mount solder joint has been investigated with comparison to 62Sn36Pb2Ag/Cu. It is found that the diffusion coefficient of intermetallic compounds at SnAg/Cu interface is smaller than that of intermetallic compounds at SnPbAg/Cu interface at 150°. The shear strength of SnAg solder joint is higher and decreases at a smaller rate during aging compared to that of SnPbAg solder joint. The fracture surface analysis shows that as the aging time increases, the fracture takes place along the solder/Cu₆Sn₅ interface with an extension toward the Sn−Cu intermetallic layer.     

Interfacial Reaction Between Sn3.0Ag0.5Cu Solder and ENEPIG for Fine Pitch BGA by Stencil Printing

In this work, solder balls in ball grid array packaging technology with the pitch of 300 μm were fabricated by stencil printing solder paste and then reflowed at high temperature. In order to evaluate the quality of solder ball after printing and reflowing processes, the mechanical performance of the joint between the solder balls and the pad was measured by shear test and the electrical resistance was tested after assembly of the substrate and printed circuit board. A comparative study of pad size on the interfacial reaction between solder paste and surface finish of electroless nickel-electroless palladium-immersion gold on the organic substrate was performed and then analyzed by observing the microstructure at the interface. Large discontinuous (Cu,Ni)₆Sn₅ was found at the interface of the solder with the pad size of 120 μm, while spalled (Pd,Ni)Sn₄ and thin (Cu,Ni)₆Sn₅ layer appeared for a pad size of 140 μm. The IMC (intermetallic compounds) was determined by the residual Cu concentration, the Pd concentration in the solder, and the Ni₂SnP barrier layer morphology at the interface, which were significantly influenced by the pad size. A reaction model during the reflow was proposed to illustrate the growth of the IMC and the relationship between the IMC and the pad size. With Pd concentration higher than the solubility of Pd in the solder, spalled (Pd,Ni)Sn₄ took shape along the interface. The solubility of Pd was influenced by Ni concentration; however, the Ni diffusion from the substrate was largely dependent on the barrier layer Ni₂SnP. Furthermore, the Ni diffusion also impacted the growth and morphology of (Cu,Ni)₆Sn₅, which was not only limited by the Cu concentration.     

Effect of thermal aging on the interfacial structure of SnAgCu solder joints on Cu

Interfacial structure plays a great role in solder joint reliability. In solder joints on Cu, not only is Kirkendall voiding at the solder/Cu interface a concern, but also the growth of interfacial Cu–Sn intermetallic compounds (IMCs). In this work, evolution of microstructure in the interfacial region was studied after thermal aging at 100–150 °C for up to 1000 h. Special effort was made during sample preparation to reveal details of the interfacial structure. Thickness of the interfacial phases was digitally measured and the activation energy was deduced for the growth of Cu₃Sn. Kirkendall voids formed at the Cu/Cu₃Sn interface as well as within the Cu₃Sn layer. The thickness of Cu₃Sn significantly increased with aging time, but that of Cu₆Sn₅ changed a little. The interfacial Cu₃Sn layer was found growing at the expense of Cu₆Sn₅. Evolution of the interfacial structure during thermal aging is discussed.     

Interaction of intermetallic compound formation in Cu/SnAgCu/NiAu sandwich solder joints

The interaction between Cu/solder interface and solder/Ni interface at a Cu/SnAgCu/NiAu sandwich solder joint with various surface finishes and solder heights was investigated. The interfacial microstructure and composition of intermetallic compounds (IMCs) were characterized by a scanning electron microscope (SEM) equipped with energy-dispersive x-ray spectroscopy (EDX). The phase structure of IMC was identified by x-ray diffraction (XRD). It is found that ternary (Cu,Ni)₆Sn₅ IMCs form at both interfaces. The composition, thickness, and morphology of the ternary IMCs depend not only on the interface itself, but also on the opposite interface. That is to say, strong coupling effects exist between the two interfaces. Lattice parameters of (Cu,Ni)₆Sn₅ shrink with increasing Ni content, in agreement with Vegard’s law. The mechanism of ternary IMC formation and interface coupling effects are discussed in this paper.     

Microstructure characterization of SnAgCu solder bearing Ce for electronic packaging

The creep-rupture lives of Sn3.8Ag0.7Cu and Sn3.8Ag0.7Cu0.03Ce lead-free solder joints for electronic packaging were investigated, respectively. And the relationship between creep behavior and intermetallic compound (IMC: Ag₃Sn, Cu₆Sn₅, CeSn₃) particles in SnAgCu/SnAgCuCe solder joints has been obtained. Meanwhile, rare earth Ce concentration gradient and retardation effect of Ce on the IMC layer have been observed at the solder/Cu interface. Moreover, aging reaction of Sn and Cu, and the effect mechanism of rare earth Ce on two IMCs (Cu₆Sn₅ and Cu₃Sn) are reported.     

Microstructure and strength of bump joints in photodiode packages

The joint strength and fracture surfaces of Sn-Pb and Au stud bumps for photodiode packages after isothermal aging were studied experimentally. Aluminum/gold stud bumps and Cu/Sn-Pb solders were adopted and aged for up to 900 h to analyze the effect of intermetallic compound (IMC) formation. The joint strength decreased with aging time. The diffraction patterns of Cu₆Sn₅, scallop-shaped IMCs, and planar-shaped Cu₃Sn were characterized by transmission electron microscopy (TEM). The IMCs between Au stud bumps and Al pads was identified as AlAu₂. The formation of Kirkendall voids and the growth of IMCs at the solder joint were found to be a possible mechanism for joint strength reduction.     

Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules

High power modules are still facing the challenges to increase their power output, increase the junction temperature, and increase their reliability in harsh conditions. Therefore this study is doing a detail analysis of the soldering joint between a direct copper bonded substrate and a high power IGBT made with the high lead solder alloy Pb_92.5Sn_5.0Ag_2.5. The intermetallic phases and the microstructure of standard chip to substrate solder joint will be analysed and compared to deteriorated joints coming from modules which have undergone an active thermal cycling. As expected, the as soldered joint was clearly different than solder joints made for ball grid array or small components on PCBs. The as soldered joint shows no sign of Cu₆Sn₅ intermetallic layer, but instead shows the presence of Ag₃Sn particles at the solder–chip interface. Furthermore, the failure mechanisms under active thermal cycling also seem to be different. There is no growth of intermetallic phases and no strong delamination of the device. Instead a large network of intermetallic particles (Ag₃Sn) is produced during aging and seems to degrade the solder thermal properties.     

Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology

Flip-chip interconnection technology plays a key role in today’s electronics packaging. Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb/Ni/Cu/Ti/Si₃N₄/Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni_1−x,Cu_x)₃Sn₄ was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni_1−x,Cu_x)₃Sn₄ was next to the Ni/Cu UBM. The islandlike (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC) could be related to the Ni thickness and reflow times. In addition, the influence of Cu contents on phase transformation during reflow was also studied.     

Interfacial reactions and compound formation of Sn-Ag-Cu solders by mechanical alloying on electroless Ni-P/Cu under bump metallization

Electroless Ni-P under bump metallization (UBM) has been widely used in electronic interconnections due to the good diffusion barrier between Cu and solder. In this study, the mechanical alloying (MA) process was applied to produce the SnAgCu lead-free solder pastes. Solder joints after annealing at 240°C for 15 min were employed to investigate the evolution of interfacial reaction between electroless Ni-P/Cu UBM and SnAgCu solder with various Cu concentrations ranging from 0.2 to 1.0 wt.%. After detailed quantitative analysis with an electron probe microanalyzer, the effect of Cu content on the formation of intermetallic compounds (IMCs) at SnAgCu solder/electroless Ni-P interface was evaluated. When the Cu concentration in the solder was 0.2 wt.%, only one (Ni, Cu)₃Sn₄ layer was observed at the solder/electroless Ni-P interface. As the Cu content increased to 0.5 wt.%, (Cu, Ni)₆Sn₅ formed along with (Ni, Cu)₃Sn₄. However, only one (Cu, Ni)₆Sn₅ layer was revealed, if the Cu content was up to 1 wt.%. With the aid of microstructure evolution, quantitative analysis, and elemental distribution by x-ray color mapping, the presence of the Ni-Sn-P phase and P-rich layer was evidenced.