Dosimeter properties of CaO transparent ceramic prepared by the SPS method

We have studied photoluminescence (PL), scintillation and thermally-stimulated luminescence (TSL) dosimeter properties of CaO transparent ceramic, in comparison with those of MgO transparent ceramic as a reference. Both samples were made by a Spark Plasma Sintering method. In the PL spectra, both samples showed emission peaks due to F and F⁺ centers. Moreover, in addition to these peaks, a scintillation emission peak was detected at 330 nm for both CaO and MgO, which was caused by surface defects. The TSL glow curves showed a main peak around 55 °C for CaO and 140 °C for MgO. The TSL response was confirmed to monotonically increase with irradiation dose over the dose range from 0.1 to 1000 mGy.     

Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments

A systematical analysis of the correlation between the crystalline quality and the luminescence of rare-earth-implanted β-Ga₂O₃ nanostructures with potential applications in visible and ultraviolet photonics is presented. Europium ions led to red emission while gadolinium ions are efficient ultraviolet emitters. Different degrees of lattice recoveries of the nanostructures have been achieved after implantation by rapid thermal annealing treatments carried out at different temperatures. The recovery process has been analyzed by transmission electron microscopy (TEM), high-resolution TEM, and Raman techniques. High-fluence implantation with either of the two rare earth ions induces partial amorphization of the structures. Partial recrystallization of the nanostructures above 500 °C is revealed by Raman analysis. Nearly complete recovery of the crystal structure is obtained in the annealing temperature range 900–1100 °C, coincident with the expected value for bulk Ga₂O₃. Cathodoluminescence and photoluminescence allowed comparison of the Eu³⁺ and Gd³⁺ intraionic luminescence lines after annealing at different temperatures and their correlation with the crystallinity. It has been found that the width of the Eu³⁺ luminescence lines clearly correlates with the width of the Raman peaks, both decreasing with annealing temperature, which shows the possibility of using the luminescence of this rare earth as a probe for lattice disorder. On the other hand, our results suggest that Gd³⁺ lines are much less sensitive to disorder.     

Effects of the annealing temperature on the structure and up-conversion photoluminescence of ZnO film

The up-conversion film is being tried to increase the photoelectric conversion efficiency of the silicon solar cell. To improve the efficiency of the photoluminescence film, the effects of the annealing temperature were investigated on the structure and photoluminescence of the ZnO up-conversion film, which was prepared using the sol-gel method and the spin-coating technique. The results show that the organic compounds and water in the ZnO film were completely eliminated when the annealing temperature reached 500?°C. The crystallinity of film is improved and the average grain size continuously increases as increasing the annealing temperature. The transmittance in the wavelength range of 400–2000?nm continuously increases as the annealing temperature increases from 500?°C to 700?°C, whilst it decreases first and then increases as the annealing temperature increases from 800?°C to 1000?°C. When the film is excited with a laser of 980?nm, there are two intense emission bands in the up-conversion emission spectra, 542-nm green light and 660-nm red light, corresponding to Ho³⁺: ⁵S₂/⁵F₄?→?⁵I₈?and ⁵F₅?→?⁵I₈ transitions, respectively. In addition, the intensity of up-conversion luminescence for the film increases first and then decreases with the increase of the annealing temperature. When the annealing temperature is at 900?°C, the film consists of small round compact particles with a high degree of crystallization, reaching maximum up-conversion intensity of the film.     

Effect of elevated annealing temperature on the morphology, microstructure, conductivity and microwave absorption properties of phthalocyanine polymer

An aromatic, diether-linked phthalocyanine resin (Pc) was prepared from 4,4′-bis (3,4-dicyanophenoxy) biphenyl (BPh) and investigated for morphology, microstructure, dielectric, conductivity and microwave absorption properties at different annealing temperatures from 300 to 800 °C. The results showed that the annealing temperature could significantly change the morphology and microstructure of the Pc polymer, leading to the generation of carbon-Pc polymer composites, and enhance the microwave absorbing and electrical properties of the Pc polymer. The dramatic electrical and dielectric transition happened when the annealing condition was 550 °C 24 h. The conductivity of the samples exhibited a transition of electrical behavior from an insulator to semiconductor of approximately 10⁺² S/cm. Pc polymer exhibited excellent microwave absorption properties in the frequency range of 0.5–18.0 GHz after sintering process. The microwave absorption of the annealing Pc polymer can be mainly attributed to the dielectric loss rather than magnetic loss. The sample annealed at 500 °C 24 h had two strong microwave absorbing peaks and achieved a maximum absorbing value of ?44 dB around 10.7 and 17.5 GHz when the thickness was 3.0 mm. The novel carbon-Pc polymer composites were believed to have potential applications in the microwave absorbing area.     

Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target

Indium tin oxide (ITO) thin films were deposited on quartz substrates by radio frequency (RF) sputtering with different RF power (100–250 W) using the powder target at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. The intensity of (400) orientation clearly increases with the sputtering power increases, although the films have (222) preferred orientation. Increasing sputtering power is benefit for lower resistivity and transmittance. The films were annealed at different temperature (500–800 °C), then we explored the relationship between their electro-optical and structural properties and temperature. It has been observed that the annealed films tend to have (400) orientation and then show the lower resistivity and transmittance. The ITO thin film prepared by RF sputtering using powder target at 700 °C annealing temperature and 200 W sputtering power has the resistivity of 2.08 × 10^?4 Ω cm and the transmittance of 83.2 %, which specializes for the transparent conductive layers.     

Annealing effects on the structural and optical properties of growth ZnO thin films fabricated by pulsed laser deposition (PLD)

Annealed ZnO thin film at 300, 350, 400, 450 and 500 °C in air were deposited on glass substrate by using pulsed laser deposition. The effects of annealing temperature on the structural and optical properties of annealed ZnO thin films by grazing incident X-ray diffraction (GIXRD), transmittance spectra, and photoluminescence (PL) were investigated. The GIXRD reveal the presence of hexagonal wurtzite structure of ZnO with preferred orientation (002). The particle size is calculated using Debye–Scherrer equation and the average grain size were found to be in the range 5.22–10.61 ± 0.01 nm. The transmittance spectra demonstrate highly transparent nature of the films in visible region (>70 %). The calculation of optical band gap energy is found to be in the range 2.95–3.32 ± 0.01 eV. The PL spectra shows that the amorphous film gives a UV emission only and the annealed films produce UV, violet, blue and green emissions this indicates that the point defects increased as the amorphous film was annealed.     

Influence of annealing temperature on the structural and optical properties of highly-oriented Al and Er co-doped ZnO films

High-quality c-axis oriented 7 mol% Al and 1.5 mol% Er co-doped ZnO films (ZEAO) were prepared on the quartz glass substrates by using sol–gel method. The influence of the annealing temperature on the crystal orientation, microstructure and optical properties of the ZEAO thin films were studied by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and UV–vis transmittance spectrophotometer, respectively. XRD results revealed that all the samples were polycrystalline with hexagonal structure and exhibited (002) preferential orientation. With increasing the annealing temperature, the grain size and orientation extent increased. The optical studies showed each ZEAO film had a relatively high transmittance above 85 %. The transmittance as high as 95 % was obtained at the annealing temperature of 800 °C, and the corresponding average grain size was about 50 nm. The cathodoluminescence (CL) spectra of these films were also used to characterize the luminescence properties. Strong UV emission centered at 380 nm was observed in the CL spectra taken for the pure ZnO. For the ZEAO sample, the blue-green emission is related to the 4f shell transition in the Er³⁺ ions of ZnO matrices, corresponding to a transition from the excited states (⁴F_5/2).     

Effect of annealing atmosphere (Ar vs. air) and temperature on the electrical and optical properties of spin-coated colloidal indium tin oxide films

Colloidal indium tin oxide (ITO) ~6 nm nanoparticles synthesized in-house were deposited by spin coating on fused silica substrates, resulting in high resistivity films due to the presence of passivating organics. These films were annealed at various temperatures ranging from 150 to 750 °C in air and argon atmospheres. The films are very transparent in the as-coated form, and they retain high transparency upon annealing, except the films annealed at 300 °C in argon, which became brown due to incomplete pyrolysis of the organics. Thermogravimetric analysis and Raman characterization showed that the removal of organics increases with an increase in the annealing temperature, and that this removal is more efficient in the oxidizing atmosphere of air, especially in the 300–450 °C temperature range than in Ar. Although ITO defect chemistry suggests that argon annealing should result in higher carrier concentration than air annealing, the faster removal of insulating organics upon annealing in air resulted in significantly lower film resistivity at intermediate annealing temperatures for films annealed in air than in Ar. At higher annealing temperatures, both Ar and air annealing, resulted in comparable film resistivities (the lowest achieved was ~10⁰ Ω cm).     

Improved luminescence properties of nanocrystalline silicon based electroluminescent device by annealing

We report an annealing effect on electrical and luminescence properties of a red electroluminescent device consisting of nanocrystalline silicon (nc-Si). The red luminescence was generated by flowing the forward current into the device at a low threshold direct current (DC) forward voltage with a rise of annealing temperature up to 500 °C. Moreover, the luminescence of the device annealed at 500 °C was more intense than that of the device annealed at 200 °C or less under the same forward current density, because of the injection of a large quantity of carriers to the radiative recombination centers at the nc-Si surface vicinity. These were attained by a low resistivity of indium tin oxide (ITO) electrode and good contact at the ITO electrode/luminous layer interface region by the annealing treatment. The above results indicated that the annealing treatment of the device is effective for the realization of high luminance due to the improvement in the injection efficiency of carriers to the radiative recombination centers.     

A highly thermal stable and waterproof red phosphor: Pr3+-doped Sr2Al2SiO7

The Pr³⁺-doped Sr₂Al₂SiO₇ phosphors with red emission were synthesized by conventional solid-state reaction in air for the first time. The photoluminescence properties of the phosphors and structural phase were investigated. The red emission of the phosphors was observed under the range of 420–500 nm excitation, which covered the emission spectra of blue LED. The optimal emission intensity was obtained when Pr-doping content was 0.008 mol and the chromaticity coordinates of these phosphors could be slightly tuned by changing the Pr³⁺ concentration. Furthermore, the investigation of temperature dependence of luminescence and the water immersion experiment indicated that the Pr-doped Sr₂Al₂SiO₇ phosphors were highly thermally stable and waterproof.     

Processing and magnetic properties of metal-containing SiCN ceramic micro- and nano-composites

Owing to their excellent high temperature and oxidation resistance, non-oxide polymer-derived silicon-based ceramics are suitable for applications in hot and corrosive environments. The metal (Fe, Co)-containing pre-ceramic compounds combine the processability of organic polymers with the physical and chemical characteristics of the metallic component. In this study, we will introduce two different routes to embed metal particles in a SiCN ceramic matrix, derived from the commercially available polysilazane Ceraset^®. (1). Mixing and milling of metal powders (Fe, Co) with pre-crosslinked polysilazane followed by pyrolysis at 1100 °C. (2). Chemical reaction between metal carbonyl compounds, namely Fe(CO)₅ and Co₂(CO)₈, with pure polyorganosilazane followed by pyrolysis at 1100 °C. Both synthetic routes will be discussed on two particular examples, iron- and cobalt-containing samples as well as their resulting different microstructures with respect to their magnetic properties. The phases and microstructures of the metal–SiCN composites were investigated in terms of X-ray diffraction (XRD), scanning electron microscopy (SEM) coupled with EDX, transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR) and magnetometer. Upon annealing in argon at 1100 °C, the crosslinked polysilazane blended with iron powder possesses a high saturation magnetization of about ～57 emu/g and exhibits good ferromagnetic behaviour in comparison to the one blended with cobalt. The magnetic measurements were performed within the temperature range 65–300 K.     

Effects of annealing process on microstructure and electrical properties of cold-drawn thin layer copper cladding steel wire

The microstructure, mechanical and electrical properties of cold-drawn thin layer copper cladding steel (CCS) wires annealed after different processes were studied by optical microscopy, electron omnipotent material experiment machine, micro hardness machine, SEM and electrical resistivity measurement system. The results indicated that the recovery and recrystallization of steel-core happened in the temperature range 550–750 °C for the holding period of 120 min. When the annealing temperature was higher than 750 °C, grains begun to grow and grain sizes increased gradually with increasing the annealing temperature. The tensile strength and micro hardness were declined with increasing annealing temperature and holding time. The distance of Cu–Fe atoms interfacial diffusion of thin layer CCS wires ranged from 4 µm of cold-drawn wire to 7.5 µm of annealed wire at 850 °C for 120 min. The higher the annealing temperature become, the larger the distance of Cu–Fe atoms interfacial diffusion is. When the annealing temperature was lower than 650 °C, the resistivity was slightly less than 71 × 10^?3 Ω mm² m^?1 which was the resistivity of cold-drawn wire. When the annealing temperature was higher than 650 °C, the resistivity increased with increasing the annealing temperature. Meanwhile, the variation of electrical property of thin layer CCS wires was analyzed and discussed based on microstructure and interfacial diffusion.     

Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

ZnO epitaxial thin films were grown on p-type Si(100) substrates by dual ion beam sputtering deposition system. The crystalline quality, surface morphology, optical and electrical properties of as-deposited ZnO thin films at different growth temperatures were studied. Substrate temperature was varied from 100 to 600 °C at constant oxygen percentage O₂/(O₂ + Ar) % of 66.67 % in a mixed gas of Ar and O₂ with constant chamber pressure of 2.75 × 10^?4 mBar. X-Ray diffraction analyses revealed that all the films had (002) preferred orientation. The minimum value of stress was reported to be ?0.32 × 10¹⁰ dyne/cm² from ZnO film grown at 200 °C. Photoluminescence measurements demonstrated sharp near-band-edge emission (NBE) was observed at ~375 nm along with deep level emission (DLE) in the visible spectral range at room temperature. The DLE Peak was found to have decrement as ZnO growth temperature was increased from 200 to 600 °C. The minimum FWHM of the NBE peak of 16.76 nm was achieved at 600 °C growth temperature. X-Ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies point defects in ZnO film grown at 400 °C. The ZnO thin film was found to be highly resistive when grown at 100 °C. The ZnO films were found to be n-type conducting with decreasing resistivity on increasing substrate temperature from 200 to 500 °C and again increased for film grown at 600 °C. Based on these studies a correlation between native point defects, optical and electrical properties has been established.     

Effect of annealing on cathodoluminescence of synthetic zincite single crystals

We have studied the effect of annealing on the luminescent properties of zincite single crystals grown from hydrothermal solutions. Annealing in the temperature range of 400–700°C increases the edge cathodoluminescence (CL) intensity in zincite. At the same time, raising the annealing temperature from 800 to 1100°C leads to quenching of the edge emission and increases the intensity of the green band. In addition, annealing leads to broadening of the edge luminescence band and shifts it to lower energies. In contrast, annealing shifts the impurity band to higher energies. The observed changes in the CL behavior of zincite are tentatively interpreted in terms of the temperature effect on the concentration of structural defects, in particular, oxygen vacancies and their complexes.     

Preparation,spectroscopic properties and enhanced luminescence of Tb<Superscript>3+</Superscript>-doped LuAG phosphors and transparent ceramics by introduction of Sc<Superscript>3+</Superscript>

Tb-doped LuAG(lutetium aluminum garnet) and LuSAG(lutetium scandium-aluminum garnet) precursors were synthesized through a co-precipitation process, using ammonium hydrogen carbonate as precipitator. Single-phase cubic LuAG/Tb and LuSAG/Tb phosphors were obtained after calcination at 1000 and 1200 °C, respectively. These powders could be easily sintered into corresponding transparent LuAG/Tb and LuSAG/Tb ceramics in H₂ atmosphere at 1850 °C. The PL excitation and emission spectra were recorded for both phosphors and ceramics. Emission spectra of all materials were found to be typical for Tb³⁺, resulting from radiative relaxation of D level. Both the Tb-doped LuSAG phosphors and ceramics show higher efficient luminescence than LuAG , especially the transparent Tb-doped LuSAG ceramic shows about 150% higher luminescence intensity than transparent Tb-doped LuAG ceramic.     

Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power

In this study, transparent conductive Al doped zinc oxide (ZnO: Al, AZO) thin films with a thickness of 40 nm were prepared on the Corning glass substrate by radio frequency magnetron sputtering. The properties of the AZO thin films are investigated at different substrate temperatures (from 27 to 150 °C) and sputtering power (from 150 to 250 W). The structural, optical and electrical properties of the AZO thin films were investigated. The optical transmittance of about 78 % (at 415 nm)–92.5 % (at 630 nm) in the visible range and the electrical resistivity of 7 × 10^?4 Ω-cm (175.2 Ω/sq) were obtained at sputtering power of 250 W and substrate temperature of 70 °C. The observed property of the AZO thin films is suitable for transparent conductive electrode applications.     

Bi2MoO6 dielectric thin films fabricated by thermal oxidation of Bi/Mo thin films at ultra-low temperature

Bi/Mo multilayer thin films are deposited on Si/SiO₂/Pt substrates by direct current magnetron sputtering. The effect of annealing temperature on the microstructure, dielectric and electrical properties of the as-sputtered films is characterized systematically. X-ray diffraction data indicate that the films annealed at 450–600 °C are a mixture of diphase with the main phase Bi₂MoO₆ and secondary phase Bi₂Mo₂O₉. Results of scanning electron microscope observation show that the films annealed at 500–550 °C are dense and uniform, in particular the films annealed at 500 °C exhibit optimal dielectric and electrical properties with dielectric constant as high as 37.5, dielectric loss 1.06 %, temperature coefficient of dielectric constant ?10.86 ppm °C^?1 at 1 kHz, and leakage current density of 1.46 × 10^?7 A mm^?2 at an electric field of 18.2 kV mm^?1. With the advantages of ultralow densification temperature (500 °C) and very high sputtering deposition rate (76 nm min^?1), it is anticipated that thermal oxidation method of the sputtered Bi/Mo thin films could be a promising technique for fabrication of Bi₂MoO₆ ceramic thin film embedded-capacitors.     

The study of luminescence properties on Ce:YAG phosphor in glass co-sintered at different temperatures

Ce:YAG phosphor in glass was prepared by co-sintering bismuthate glass frits and Ce:YAG phosphors at different temperatures in the 550–800 °C range. In this work, the effect of co-sintering temperature on the photoluminescence and chromaticity coordinates (CIE) of phosphor in glass was investigated. The results show that the CIE coordinates is tunable with the increase of co-sintering temperature. As temperature increased from 550 to 700 °C, the intensity of emission and excited peak increases until a maximum is reached, after which it rapidly drops off. The degradation of luminescence properties with the higher co-sintering temperature is due to the broken lattice surrounding the Ce³⁺ and oxidation of the Ce³⁺ caused by the reactions between the bismuthate glass and Ce:YAG phosphors.     

Influence of the Eu3+ dosage concentration on luminescence properties of YPO4:Eu3+ microspheres

In this study, YPO₄:Eu³⁺ microspheres with different Eu³⁺ dosage concentration were fabricated by a facile hydrothermal route at 200 °C for 10 h in the presence of citric acid. The YPO₄:Eu³⁺ samples were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and luminescence spectroscopy. The XRD results reveal that the YPO₄:Eu³⁺ samples presented a tetragonal structure. The TEM and SEM observations demonstrate that the YPO₄:Eu³⁺ samples with uniform sphere-like morphologies can be obtained at 200 °C for 10 h. The sizes of samples are in the range of 2–2.2 μm. The room temperature luminescence properties of YPO₄:Eu³⁺ samples were studied using an excitation wavelength of 227 nm. The emission spectrum displays the bands associated to the ⁵D₀ → ⁷F_J (J = 1, 2 and 4) electronic transitions characteristics of the Eu³⁺ cations at different positions. The influence of Eu³⁺ dosage concentration on luminescence properties of YPO₄:Eu³⁺ microspheres were studied carefully.     

Annealing effects on structural and optical properties of ZnMgO films grown by RF magnetron sputtering

Two sets of ZnMgO thin films have been fabricated on Si (111) substrates by RF magnetron sputtering, and were annealed at air atmosphere afterwards. The effects of annealing temperature and time on structural and optical properties were also characterized by X-ray diffraction, scanning electron microscopy and photoluminescence (PL) spectra. For samples fabricated at a lower temperature (200 °C, defined as samples I), the experimental results revealed that only hexagonal phase was observed for the films annealed at the temperature range from 180 to 420 °C, and the best crystal quality for the films was found at 240 °C. For samples synthesized at 220 °C (defined as samples II), the crystal structures exhibited anneal-time dependent. The experimental results revealed coexistence of hexagonal and cubic phase when they were annealed at a set temperature of 220 °C with the different annealing time, and the best one can be observed when the anneal time was 30 min. PL spectra showed blue shift for UV peak with the increase of annealing temperature for samples I, and the UV emission occurred red shift and then blue shift when the anneal time increased from 20 to 30 min for samples II.