On-line monitoring of CO2 quality using doped WO3 thin film sensors

Thin films of either pure or doped tungsten oxide were grown by radiofrequency (rf) sputtering onto silicon micromachined substrates. Up to 7 different dopant materials (noble metals or metal oxides) were deposited by rf sputtering or by evaporation onto the tungsten oxide films. The responsiveness of the resulting micromachined sensors towards sulfur dioxide and hydrogen sulfide was studied. Other pollutants in CO₂ such as ethylene and methane were also tested. It was found that Au-doped tungsten oxide sensors were highly sensitive to H₂S, poorly sensitive to SO₂ and almost insensitive to hydrocarbons. On the other hand, Pt-doped tungsten oxide was highly sensitive to SO₂, poorly responsive to H₂S and nearly insensitive to hydrocarbons. By applying a principal component analysis (PCA), we show that it would be possible to selectively detect traces of H₂S and SO₂ in a CO₂ stream using doped WO₃ microsensors. These sensors could be used in a low-cost analyzer of beverage-grade CO₂.     

Preparation of SiO2 thin films using the Cat-CVD method

Using the catalytic chemical vapor deposition (Cat-CVD) method, a-Si and SiN_x films have been the main focus of studies. SiO₂ films have not been studied because of the limited life of catalysts such as tungsten or molybdenum in an oxidative atmosphere. In this report, we describe oxide film preparation using an iridium catalyst. We determined the most appropriate catalyst material for the oxide film process by exposing heated materials in tetraethoxysilane (TEOS) or O₂ gas. As the result, it was confirmed that the Ir catalyst works in a slow oxidative atmosphere. Using the Ir catalyst, SiO₂ films were deposited in two gas combinations: TEOS and N₂O, and SiH₄ and N₂O. Although the SiO₂ film processed with the combination of TEOS and N₂O was stoichiometric, its breakdown voltage is not sufficient. The SiO₂ film processed with the combination of SiH₄ and N₂O showed good electrical property.     

Fe3O4/MnO2磁性复合氧化物催化剂的制备及性能

具有磁性的非均相催化剂价格低廉、低污染、高能效、容易从溶液中分离出来。经过水热合成法合成的Fe₃O₄/MnO₂磁性复合氧化物催化剂在活化过一硫酸盐（2KHSO₅·KHSO₄·K₂SO₄）产生硫酸根自由基（SO₄-）降解水中有机污染物表现出了优良的性能。把不同质量的磁性Fe₃O₄微球与线状的MnO₂负载到一起,合成三种Fe₃O₄:MnO₂质量比分别为1:3、2:3、1:1的Fe₃O₄/MnO₂催化剂,经过XRD、SEM和TEM表征,表明这两种金属氧化物负载到一起。对比不同Fe₃O₄:MnO₂质量比的Fe₃O₄/MnO₂磁性复合氧化物催化剂活化2KHSO₅·KHSO₄·K₂SO₄的活性,发现Fe₃O₄/MnO₂（2:3）催化剂催化活性最高。通过考察不同因素对Fe₃O₄/MnO₂（2:3）催化活性的影响得出,水中罗丹明B（Rh B）降解的最佳条件为10 mg/L Rh B、0.4 g/L Fe₃O₄/MnO₂催化剂、0.3 g/L 2KHSO₅·KHSO₄·K₂SO₄、pH=8。Fe₃O₄/MnO₂（2:3）磁性复合氧化物催化剂经过3次循环利用后,催化活性没有明显下降。SO₄-在降解水中Rh B起主要作用。      

M3O4(M=FeCoCrMnMg)高熵氧化物粉体的简易制备及超电容性能研究

高熵氧化物以其独特的结构和潜在的应用前景引起了越来越多的关注。本工作采用简单易行的固相反应法制备了M₃O₄(M=FeCoCrMnMg)高熵氧化物粉体, 采用不同手段对粉体进行表征, 并采用涂覆法制备了 M₃O₄/泡沫镍(M₃O₄/NF)复合电极, 研究其超电容性能。结果表明, 随着煅烧温度升高, Fe₂O₃(H)/Co₃O₄(S)/Cr₂O₃(E)和Mn₂O₃(B)相继固溶进入尖晶石主晶相晶格; 在900 ℃煅烧2 h所得M₃O₄粉体的平均粒径为0.69 μm, 具有单一尖晶石结构(面心立方, Fd-3m, a=0.8376 nm), 且Fe、Co、Cr、Mn和Mg五种元素在晶粒内均匀分布, 呈典型的高熵氧化物特征。此外, M₃O₄/NF复合电极在1 mol/L KOH的电解液中, 当电流密度为1 A·g^-1时, 其质量比电容达到193.7 F·g^-1, 可见M₃O₄高熵氧化物在超级电容器电极材料领域具有良好的应用前景。     

Reaction between the tetragonal tungsten bronze niobate K2Sr4Nb10O30 and the perovskite Pb(Mg1/3Nb2/3)O3

The search for dielectric materials with a high dielectric constant and ′_r = ƒ(T) curves with a flat profile fitting the X7R specification is still ongoing. Promising results were obtained by mixing compounds with closely related structures, such as the tetragonal tungsten bronze (TTB) niobate K₂Sr₄Nb₁₀O₃₀ and the perovskite Pb(Mg_1/3Nb_2/3)O₃ (PMN). The present study, based on three methods of synthesis, explores the origin of the spreading out of the dielectric curves ′_r = ƒ(T). For the composition 10x K_0.2Sr_0.4NbO₃ (KSN) + (1 − x)Pb(Mg_1/3Nb_2/3)O₃ (PMN) with x = 0.3–0.6, the three synthesis methods provided similar characteristics and for the highest perovskite ratio (x = 0.3), the ′_r = ƒ(T) curve exhibits a flat profile. When lithium is used as a sintering agent, ′_r = ƒ(T) curves present a linear dependency with the temperature. These materials are also characterized by a structural and a microstructural inhomogeneity. Two phases TTB and perovskite type, different from KSN and PMN, are present after calcination and sintering, but not evenly distributed. The PbO loss during sintering also contributes to the evolution of the properties of the material.     

Al2O3 formation on Si by catalytic chemical vapor deposition

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina (Al₂O₃) thin films on silicon (Si) crystals using N₂ bubbled tri-methyl aluminum [Al(CH₃)₃, TMA] and molecular oxygen (O₂) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600 °C. The maximum deposition rate was 18 nm min⁻¹ at a catalyzer temperature of 1000 °C and substrate temperature of 800 °C. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited at a substrate temperature of 400 °C. The capacitance measurements resulted in a relative dielectric constant of 7.4, fixed charge density of 1.74×10¹² cm⁻², small hysteresis voltage of 0.12 V, and very few interface trapping charges. The leakage current was 5.01×10⁻⁷ A cm⁻² at a gate bias of 1 V.     

(K0.44,Na0.52,Li0.04) (Nb0.84,Ta0.10,Sb0.06)O3 Ferroelectric Ceramics

Recent progress in (K_0.44,Na_0.52,Li_0.043-based ceramics (KNN) with special emphasis on (K_0.44,Na_0.52,Li_0.040.84,Ta_0.10,Sb_0.06))O₃ (KNN-LT-LS) is reviewed concisely. The base KNN and its compositional derivatives are analyzed in terms of dopant-property relationships, which are then extended to the ternary derivatives. The effects of processing conditions such as humidity, precursor purity, and oxygen partial pressure during sintering are elaborated on from a phenomenological perspective. It is also shown that the spontaneous polarization is sensitive to the processing route chosen for synthesis (mixed oxide versus perovskite routes). Special attention is devoted to the discussion of the morphotropic phase boundary (MPB) dilemma in the KNN-LT-LS system, where it is shown that the origin of high piezoelectric activity is actually due to a polymorphic transition at room temperature. It is shown that prototype transducers based on pure and 1 mol% Ba²⁺ doped KNN-LT-LS exhibit performance metrics comparable to those fabricated using PZT-5H. Overall, KNNLT- LS ceramics show great promise for lead-free applications, although issues such as temperature dependence of properties and strong sensitivity to processing conditions remain as the 2 major challenges.     

Microstructural, photocatalysis and electrochemical investigations on CeTi2O6 thin films

The properties of sol–gel derived CeTi₂O₆ thin films deposited using a solution of cerium chloride heptahydrate and titanium propoxide in ethanol are discussed. The effect of annealing temperature on structural, optical, photoluminescence, photocatalysis and electrochemical characteristics has been examined. Lowest annealing temperature for the formation of crystalline CeTi₂O₆ phase in these samples is identified as 580 °C. The optical transmittance of the films is observed to be independent of the annealing temperature. The optical energy bandgap of the 600 °C annealed film for indirect transition is influenced by the presence of anatase phase of TiO₂ in its structure. Fourier transform infrared spectroscopy investigations have evidenced increased bond strength of the Ti–O–Ti network in the films as a function of annealing temperature. The photoluminescence intensity of the films has shown dependence on the annealing temperature with the films fired at 450 °C exhibiting the maximum photoluminescence activity. The decomposition of methyl orange and eosin (yellow) under UV–visible light irradiation in the presence of crystalline CeTi₂O₆ films shows the presence of photoactivity in these films. The photocatalytic response of CeTi₂O₆ films is found to be superior to the TiO₂ films. In comparison to crystalline films, the amorphous films have shown superior electrochemical characteristics. The 500 °C annealed amorphous films have exhibited the most appropriate properties for incorporation in electrochromic devices comprising tungsten oxide as the primary electrochromic electrode.     

Zn0.4(CuGa)0.3Ga2S4/CdS光催化材料的制备及其CO2还原性能

利用光催化技术将CO2转化为燃料有望解决能源危机和温室效应.Zn1–2x(CuGa)xGa2S4具有可见光响应及较高的导带电势,从热力学角度上看是较为理想的CO2还原材料,但是其光催化CO2还原活性仍然较低,亟待从动力学角度提高其活性.本研究采用Zn0.4(CuGa)0.3Ga2S4与不同比例的CdS纳米颗粒复合,制备...     

Preparation and characterization of porous Nb2O5 nanoparticles

Porous niobium oxide (Nb₂O₅) nanoparticles have been successfully prepared without any surfactant assisting. They were characterized by X-ray diffraction (XRD), nitrogen sorption, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results show that the porous Nb₂O₅ nanoparticles are polycrystalline, the Brunauer–Emmett–Teller (BET) surface area is 12.09 m²/g and the average pore size is 3.4 nm. In addition, spherical and flake-like Nb₂O₅ samples were obtained and characterized. Possible explanations for the formation of Nb₂O₅ nanocrystals with different morphologies are discussed.     

可磁分离ZnFe2O4-TiO2/还原氧化石墨烯复合材料的制备及光催化性能

以TiO2(P25)、 Fe(NO3)3·9H2O、 Zn(NO3)2·6H2O和氧化石墨烯(GO)为原料,通过一步溶剂热法合成可磁分离的ZnFe2O4-TiO2/还原氧化石墨烯(rGO)复合材料。采用UV-Vis、 Raman、 XRD、 SEM和EDS对ZnFe2O4-TiO2/rGO复合材料进行表征,并研究不同rGO比例的ZnFe2O4-TiO2/rGO对模拟染料废水亚甲基蓝(MB)的光催化降解性能。GO在溶剂热反应过程中,被还原成rGO。由于ZnFe2O4和rGO的加入,不仅使ZnFe2O4-TiO2/rGO实现对可见光的吸收,而且使其具有磁性,便于分离和回收利用。当GO质量分数为5wt%时, ZnFe2O4-TiO2/rGO显现出对MB最佳的光催化活性, 60 min光照后的降解率达到99.1%。通过光催化活性物种捕获实验得出ZnFe2O4-TiO2/rGO复合材料降解MB的过程中,活性物种主要为·OH和·O2-, TiO2导带(CB)中的光生电子(e+)转移到ZnFe2O4的价带(VB),遵循Z型转移机制。光催化剂稳定性实验表明, ZnFe2O4-TiO2/rGO复合材料具有优越的稳定性,可作为太阳光照射下降解有机染料的光催化剂。     

Frequency dependent electrical conductivity and dielectric relaxation behavior in amorphous (90V2O5–10Bi2O3) oxide semiconductors doped with SrTiO3

We report on the experimental results of frequency dependent a.c. conductivity and dielectric constant of SrTiO₃ doped 90V₂O₅–10Bi₂O₃ semiconducting oxide glasses for wide ranges of frequency (500–10⁴ Hz) and temperature (80–400 K). These glasses show very large dielectric constants (10²–10⁴) compared with that of the pure base glass (≈10²) without SrTiO₃ and exhibit Debye-type dielectric relaxation behavior. The increase in dielectric constant is considered to be due to the formation of microcrystals of SrTiO₃ and TiO₂ in the glass matrix. These glasses are n-type semiconductors as observed from the measurements of the thermoelectric power. Unlike many vanadate glasses, Long's overlapping large polaron tunnelling (OLPT) model is found to be most appropriate for fitting the experimental conductivity data, while for the undoped V₂O₅–Bi₂O₃ glasses, correlated barrier hopping conduction mechanism is valid. This is due to the change of glass network structure caused by doping base glass with SrTiO₃. The power law behavior (σ_ac=A(ω^s) with s<1) is, however, followed by both the doped and undoped glassy systems. The model parameters calculated are reasonable and consistent with the change of concentrations (x).     

Dielectric Properties of Ba0.6Sr0.4TiO3-La(B0.5Ti0.5)O3 (B=Mg, Zn) Ceramics

Ba_0.6Sr_0.4TiO₃-La(B_0.5Ti_0.5)O₃ (B = Mg, Zn) ceramics were prepared by a solid-state reaction method, and their microwave dielectric characteristics and tunability were investigated. The ferroelectric-dielectric solid solutions with cubic perovskite structures were obtained for compositions of 10 to 60 mol% La(Mg_0.5Ti_0.5)O₃ and 10 to 50 mol% La(Zn_0.5Ti_0.5)O₃. With the increase of linear oxide dielectric content, the dielectric constant and tunability were decreased and Qf was increased. Ba_0.6Sr_0.4TiO₃-La(Mg_0.5Ti_0.5)O₃ has better dielectric properties than Ba_0.6Sr_0.4TiO₃-La(Zn_0.5Ti_0.5)O₃. 0.9Ba_0.6Sr_0.4TiO₃-0.1La(Mg_0.5Ti_0.5)O₃ has a dielectric constant ε = 338.2, Qf = 979 GHz and a tunability of was 3.7% at 100 kHz under 1.67 kV/mm. The Qf value of 0.5Ba_0.6Sr_0.4TiO₃- 0.5La(Mg_0.5Ti_0.5)O₃ reached 9367 GHz, but the tunable properties were lost.     

Sol–gel synthesis and luminescence of unexpected microrod crystalline Ca5La5(SiO4)3(PO4)3O2:Dy phosphors employing different silicate sources

Ca₅La₅(SiO₄)₃(PO₄)₃O₂ doped with Dy³⁺ were synthesized by sol–gel technology with hybrid precursor employed four different silicate sources, 3-aminopropyl-trimethoxysilane (APMS), 3-aminopropyl-triethoxysilane (APES), 3-aminopropyl-methyl-diethoxysilane (APMES) and tetraethoxysilane (TEOS), respectively. The SEM diagraphs show that there exist some novel unexpected morphological structures of microrod owing to the crosslinking reagents than TEOS as silicate source for their amphipathy template effect. X-ray pictures confirm that Ca₅La₅(SiO₄)₃(PO₄)₃O₂:Dy³⁺ compound is formed by a pure apatitic phase. The Dy³⁺ ions could emit white light in Ca₅La₅(SiO₄)₃(PO₄)₃O₂ compound, and the ratio of Y/B is 1.1, when the Dy³⁺ doped concentration is 1.0 mol%.     

Low temperature plasma-assisted oxidation and thin-film deposition processes for forming device-quality SiO2/Si and composite dielectric-SiO2/Si heterostructures

In the high-temperature thermal oxidation of Si, the SiO₂/Si interface is continuously regenerated as the bulk oxide grows. This paper describes an alternative low temperature, 200–300 °C, plasma-assisted process that optimizes electrical properties of SiO₂/Si interfaces and bulk SiO₂ layers by separately controlling interface formation and bulk oxide deposition. Composite dielectrics, oxide/nitride (ON) and oxide (ONO), have been fabricated by extending the low temperature plasma-assisted processes to include deposition of Si₃N₄ films. The electrical properties of SiO₂/Si structures formed by the two-step, low temperature oxidation-deposition process are essentially the same as those of SiO₂/Si structures formed by high temperature, 850–1050 °C, thermal oxidation. The electrical properties of devices incorporating ON and ONO composite dielectrics are degraded with respect to the SiO₂/Si structures, but are similar to those of composite dielectrics formed by combinations of high temperature processing.     

WO3/TiO2复合薄膜的制备及其电致变色性能

使用水热法在掺氟SnO₂涂覆的导电玻璃（FTO）基板上生长TiO₂纳米线,随后在TiO₂纳米线上采用水热法生长WO₃纳米线,制备出WO₃/TiO₂复合薄膜。通过循环伏安法（CV）、计时电流法（CA）、计时电量法（CC）等电化学测试技术研究了WO₃/TiO₂复合薄膜的电致变色性能;采用紫外分光光度计对薄膜的着色﹑漂白状态的响应时间进行测试。通过以上测试,计算得到了薄膜的循环稳定性﹑光调制﹑着色效率和切换时间（Y和X）等参数。结果显示WO₃/TiO₂复合薄膜的电致变色性明显提高,其中WO₃/TiO₂复合薄膜可逆性增加了6%,着色效率提高了40.96 cm2/C。      

Deposition and dielectric properties of CaCu3Ti4O12 thin films on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully deposited on Pt/Ti/SiO₂/Si(1 0 0) substrates using pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CCTO thin films were greatly affected by the substrate temperature and oxygen pressure. Thin films with a (2 2 0) preferential orientation were obtained at the substrate temperature above 700 °C and oxygen pressure above 13.3 Pa. The 480-nm thin films deposited under 720 °C and 26.6 Pa have a fairly high dielectric constant of near 2000 at 10 kHz and room temperature. The values of the dielectric constant and loss and their temperature-dependence under different frequency are comparable with those obtained in the epitaxial CCTO films grown on oxide substrates.     

Electrochemical deposition and oxidation of CuFe2 alloy: a new method to deposit CuFe2O4 thin films at room temperature

The objective of this research work is to develop an electrochemical process to deposit polycrystalline copper iron oxide (CuFe₂O₄) films on different conducting substrates at room temperature (27°C). Cathodic Electrodeposition of CuFe₂ was carried out on various conducting substrates in galvanostatic mode. The composition of alloy was determined using atomic absorption spectroscopy (AAS) technique. The electrodeposited CuFe₂ alloy films were electrochemically oxidized (anodized) in aqueous KOH electrolyte at room temperature. The structural studies of oxide films were carried out using X-ray diffraction and IR absorption techniques. For surface morphological studies, optical microscopy and scanning electron microscopy (SEM) techniques were used.     

Growth and stability of Ga2O3 nanospheres

Gallium oxide thin films were prepared by thermal evaporation and deposition of Ga₂O₃ on NaCl(001) cleavage planes at varying substrate temperatures, oxygen pressures and deposition rates. The structure of the so-prepared thin films was checked by Transmission Electron Microscopy and Selected Area Diffraction and also characterized by X-ray Photoelectron Spectroscopy and Atomic Force Microscopy, both in the as-deposited state and after different oxidative and reductive treatments. The substrate temperature proved to be most crucial for the structure of the gallium oxide films, ranging from low-contrast amorphous structures at low substrate temperatures (298 K) to nanosphere structures at higher temperatures (580 K). The stability of the films was found to be mainly determined by the interaction of substrate temperature and deposition rate. Crystalline β-Ga₂O₃ structures were obtained after oxidative, reductive and annealing treatments at and beyond 773 K suggesting that the crystallization is mainly a thermal annealing effect.     

g-C3N4/Ag/TiO2 NTs的制备及其对西维因的光催化降解

采用阳极氧化法制备二氧化钛纳米管(TiO₂ NTs),然后在紫外光和微波辅助下引入Ag、g-C₃N₄制备出g-C₃N₄/Ag/TiO₂ NTs三元复合光催化材料。用扫描电镜(SEM)、X-射线衍射(XRD)、X-射线光电子能谱(XPS)、紫外-可见漫反射光谱(UV-Vis)、光致发光(PL)等手段对g-C₃N₄/Ag/TiO₂ NTs进行表征,研究了这种材料对西维因的降解性能。结果表明,在模拟太阳光照射下,g-C₃N₄/Ag/TiO₂ NTs对西维因的降解率由TiO₂ NTs的29.1%提高到51.8%。光催化活性的提高,与Ag表面等离子体共振效应、Ag优异的电荷传导性以及g-C₃N₄与TiO₂ NTs界面的异质结有关。