SAW device modeling including velocity dispersion based on ZnO/diamond/Si layered structures

Surface acoustic wave (SAW) filter properties of ZnO/diamond/Si structures are calculated including velocity dispersion. The conventional SAW device modeling has previously been developed for bulk substrates. However, layered materials exhibit SAW velocity dispersion. The null frequency bandwidth of typical layered ZnO/diamond/Si structures is narrower than that calculated by conventional SAW device modeling techniques due to the velocity dispersion of the layered structures. The null frequency bandwidth of layered structures was calculated by the delta function model and the equivalent circuit model, including velocity dispersion, and compared with the experimental results. The dispersive equivalent circuit (DEC) model for layered structures is also presented. The results of these analysis are compared with the experimental results which show very good agreement.     

Analysis of SAW propagation in gratings on ZnO/diamond substrates

The space harmonic method is used to analyze surface acoustic wave (SAW) propagation under an infinite periodic metal grating on ZnO/diamond composite layered substrates. Dispersion properties for shorted and open gratings are derived as a function of the thickness of the grating electrodes. From these dispersion relations, the coupling of modes (COM) parameters are derived. Energy profiles inside ZnO/diamond show that the energies contained in each of the ZnO and diamond layers are of the same order when the thickness of the ZnO layer is P/pi (P = grating period) and that the energy is contained within two wavelengths below the ZnO/diamond interface.     

Theoretical study on SAW characteristics of layered structuresincluding a diamond layer

Diamond has the highest surface acoustic wave (SAW) velocity among all materials and thus can provide much advantage for fabrication of high frequency SAW devices when it is combined with a piezoelectric thin film. Basic SAW properties of layered structures consisting of a piezoelectric material layer, a diamond layer and a substrate were examined by theoretical calculation. Rayleigh mode SAW's with large SAW velocities up to 12,000 m/s and large electro-mechanical coupling coefficients from 1 to 11% were found to propagate in ZnO/diamond/Si, LiNbO₃/diamond/Si and LiTaO₃/diamond/Si structures. It was also found that a SiO₂/ZnO/diamond/Si structure can realize a zero temperature coefficient of frequency with a high phase velocity of 8,000-9,000 m/s and a large electro-mechanical coupling coefficient of up to 4%     

Analysis of frequency response of IDT/ZnO/Si SAW filter using the coupling of modes model

A monolithic integration of filters on Si or GaAs substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. But, direct monolithic integration of surface acoustic wave (SAW) filters is impossible with Si, which is nonpiezoelectric, and difficult with GaAs, which is weakly piezoelectric. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we propose a modified coupling-of-modes (COM) approach, which can be used in the practical design of a layered ZnO/Si SAW filter. This is a dispersive SAW-layered filter, and some of the COM parameters become frequency dependent due to the phase velocity dispersion. The frequency response of the 3-step ladder type ZnO/Si SAW filter is analyzed and compared with the experimental results.     

Theoretical investigation of surface acoustic wave in the new, three-layered structure: ZnO/AlN/diamond

The new layered structure, ZnO/AlN/diamond, for surface acoustic wave (SAW) devices is investigated for gigahertz-band applications. This structure combines the advantages of both piezoelectric materials, with a high electromechanical coupling coefficient (K2) of ZnO and high acoustic velocity of AlN. Theoretical results show that Rayleigh mode SAWs with large phase velocities up to 12,200 m/s and large K2 from 1 to 3% were generated with this new structure.     

SAW COM-parameter extraction in AlN/diamond layered structures

Highly c-axis oriented aluminum nitride (AlN) thin piezoelectric films have been grown on polycrystalline diamond substrates by pulsed direct current (DC) magnetron reactive sputter-deposition. The films were deposited at a substrate temperature below 50/spl deg/C (room temperature) and had a typical full width half maximum (FWHM) value of the rocking curve of the AlN-002-peak of 2.1 degrees. A variety of one-port surface acoustic wave (SAW) resonators have been designed and fabricated on top of the AlN films. The measurements indicate that various SAW modes are excited. The SAW phase velocities of up to 11.800 m/s have been measured. These results are in agreement with calculated dispersion curves of the AlN/diamond structure. Finally, the coupling of modes parameters have been extracted from S/sub 11/ measurements using curve fitting for the first SAW mode, which indicate an effective coupling K/sup 2/ of 0.91% and a Q factor of about 600 at a frequency of 1050 MHz.     

Analysis of SAW properties of epitaxial ZnO films grown on R-Al2O3 substrates

ZnO thin films with a high piezoelectric coupling coefficient are widely used for high frequency and low loss surface acoustic wave (SAW) devices when the film is deposited on top of a high acoustic velocity substrate, such as diamond or sapphire. The performance of these devices is critically dependent on the quality of the ZnO films as well as of the interface between ZnO and the substrate. In this paper, we report the studies on piezoelectric properties of epitaxial (112¯0) ZnO thin films grown on R-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) technique. The c-axis of the ZnO film is in-plane. The ZnO/R-Al₂O₃ interface is atomically sharp. SAW delay lines, aligned parallel to the c-axis, were used to characterize the surface wave velocity, coupling coefficient, and temperature coefficient of frequency as functions of film thickness to wavelength ratio (h/λ). The acoustic wave properties of the material system were calculated using Adler's matrix method, and the devices were simulated using the quasi-static approximation based on Green's function analysis     

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.     

Combination of e-beam lithography and of high velocity AIN/diamond-layered structure for SAW filters in X band

In this work, we report on the fabrication results of surface acoustic wave (SAW) devices operating at frequencies up to 8 GHz. In previous work, we have shown that high acoustic velocities (9 to 12 km/s) are obtained from the layered AIN/diamond structure. The interdigital transducers (IDTs) made of aluminium with resolutions up to 250 nm were successfully patterned on AIN/diamond-layered structures with an adapted technological process. The uniformity and periodicity of IDTs were confirmed by field emission scanning electron microscopy and atomic force microscopy analyses. A highly oriented (002) piezoelectric aluminum nitride thin film was deposited on the nucleation side of the CVD diamond by magnetron sputtering technique. The X-ray diffraction effectuated on the AIN/diamond-layered structure exhibits high intensity peaks related to the (002) AIN and (111) diamond orientations. According to the calculated dispersion curves of velocity and the electromechanical coupling coefficient (K2), the AIN layer thickness was chosen in order to combine high velocity and high K2. Experimental data extracted from the fabricated SAW devices match with theoretical values quite well.     

Simulation of characteristics of a SiO2/c-axis-oriented LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been realized to date utilize c-axis-oriented ZnO as the piezoelectric thin film. This material, with SiO2 overlay, shows excellent characteristics of a high phase velocity of over 10,000 m/s and a zero temperature coefficient, and it has been successfully applied to high-frequency SAW filters and resonators. To expand on materials used on diamond, the theoretical calculation has been carried out for LiNbO3/diamond, and a high electromechanical coupling coefficient up to 9.0% is expected. In this work, the characteristics of SiO2/LiNbO3/diamond were studied by computer simulation, emphasizing a zero temperature coefficient with a high coupling coefficient. Calculations are carried out for the phase velocity, the electromechanical coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa wave. As a result, SiO2/IDT/LiNbO3/diamond is found to offer a zero temperature coefficient with a very high coupling coefficient up to 10.1% in conjunction with a high phase velocity of 12,100 m/s.     

Influence of leaky surface acoustic wave velocity of glass substrates on frequency variation of ZnO/glass SAW filters

During the manufacture of ZnO/glass surface acoustic wave (SAW) filters, two kinds of problems sometimes arise. One is that the average frequency of the SAW filters changes greatly depending on the production lot of glass sheets. The other is that SAW filters made from the same production lot of glass sheets have largely separated double peaks in the frequency distribution. Previously, it had been considered that the frequency variation of ZnO/glass SAW filters depended on such factors as the ZnO film thickness and its elastic quality. The authors focused on the glass substrates as the cause of this variation and measured the leaky SAW (LSAW) velocity on the glass substrates using an ultrasonic microscope to clarify the mechanism. As a result, it was clarified that the LSAW velocities on the glass substrates showed a large variation within and between production lots of glass sheets, and the frequency of ZnO/glass SAW filters largely depended on the LSAW velocity on glass substrates. Moreover, the authors clarified the cause of the difference in the LSAW velocity between glass substrates and were able to reduce the variation of the LSAW velocity.     

ZnO films on {001}-cut <110>-propagating GaAs substrates forsurface acoustic wave device applications

A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut 〈110〉-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 μm and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K² and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO₂ or Si₃N₄ on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the 〈110〉 propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the 〈100〉 direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values     

A compliance/stiffness matrix formulation of general Green's function and effective permittivity for piezoelectric multilayers

This paper presents an efficient and stable recursive compliance matrix method for analyzing wave propagation in multilayered piezoelectric media. The effective permittivity and generalized Green's functions for a layered system, a layered system on a substrate, and a layered system between two substrates have been obtained from the elements of the total or surface compliance/stiffness matrices, which are calculated recursively, layer by layer, from the layer compliance/stiffness matrices. The method is very closely related to the transfer matrix method and retains its simplicity and efficiency, but it is numerically stable for high thickness-to-wavelength ratio. Numerical examples for wave propagation in zinc oxide (ZnO)/Diamond/silicon(Si) structures are presented using the compliance matrix formulation for effective permittivity and Green's function.     

A ZnO nanorod based layered ZnO/64° YX LiNbO3 SAW hydrogen gas sensor

A zinc oxide (ZnO) nanorod based surface acoustic wave (SAW) sensor has been developed and investigated towards hydrogen (H₂) gas. The ZnO nanorods were deposited onto a layered ZnO/64° YX LiNbO₃ substrate using a liquid solution method. Micro-characterization results revealed that the diameters of ZnO nanorods are around 100 and 40 nm on LiNbO₃ and Au (metallization for electrodes), respectively. The sensor was exposed to different concentrations of H₂ in synthetic air at operating temperatures between 200 °C and 300 °C. The study showed that the sensor responded with highest frequency shift at 265 °C. At this temperature, stable baseline and fast response and recovery were observed.     

Mg/sub x/Zn/sub 1-x/O: a new piezoelectric material

Piezoelectric ZnO thin films have been successfully used for multilayer surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. Magnesium zinc oxide (Mg/sub x/Zn/sub 1-x/O) is a new piezoelectric material, which is formed by alloying ZnO and MgO. Mg/sub x/Zn/sub 1-x/O allows for flexibility in thin film SAW device design, as its piezoelectric properties can be tailored by controlling the Mg composition, as well as by using Mg/sub x/Zn/sub 1-x/O/ZnO multilayer structures. We report the metal-organic chemical vapor deposition (MOCVD) growth, structural characterization and SAW evaluation of piezoelectric Mg/sub x/Zn/sub 1-x/O (x<0.35) thin films grown on (011~2) r-plane sapphire substrates. The primary axis of symmetry, the c-axis, lies on the Mg/sub x/Zn/sub 1-x/O growth plane, resulting in the in-plane anisotropy of piezoelectric properties. SAW test devices for Rayleigh and Love wave modes, propagating parallel and perpendicular to the c-axis, were designed and fabricated. Their SAW properties, including velocity dispersion and piezoelectric coupling, were characterized. It has been found that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg composition in piezoelectric Mg/sub x/Zn/sub 1-x/O films.     

Simulation of characteristics of a LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been produced to date utilize the SiO2/ZnO/diamond structure, which shows excellent characteristics of a phase velocity of over 10,000 m/s with a zero temperature coefficient; this structure has been successfully applied to high-frequency narrowband filters and resonators. To expand material systems to wideband applications, c-axis-oriented LiNbO3 on diamond was studied and a coupling coefficient up to 9.0% was estimated to be obtained. In this paper, the characteristics of LiNbO3/diamond with the assumption that the LiNbO3 film is a single crystal have been studied by theoretical calculations to find higher coupling coefficient conditions. Calculations are made for the phase velocity, the coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa waves. As a result, LiNbO3/diamond is found to offer a very high electromechanical coupling coefficient of up to 16% in conjunction with a high phase velocity of 12,600 m/s and a small temperature coefficient of 25 ppm/deg. This characteristic is suitable for wide bandwidth applications in high-frequency SAW devices.     

The experimental and theoretical characterization of the SAW propagation properties for zinc oxide films on silicon carbide

The surface acoustic wave (SAW) propagation properties of zinc oxide (ZnO) films on silicon carbide (SiC) have been theoretically and experimentally characterized in the film thickness-to-acoustic wavelength ratio range up to 0.12. The experimental characterization of the SAW propagation properties was performed with a linear array of interdigital transducer (IDT) structures. The measurements characterized the velocity and propagation loss of two surface modes, a generalized SAW (GSAW) mode with velocities between 6000 and 7000 m/s, and a high velocity Pseudo-SAW (HVPSAW) mode with velocities between 8500 and 12 500 m/s. The experimentally determined characteristics of the two waves have been compared with the results of calculations based on published data for SiC and ZnO. Simulation of wave characteristics was performed with various values of the elastic constant C(13), which is absent in the published set of material constants for SiC, within the interval permitted by the requirement of positive elastic energy in a hexagonal crystal. The best agreement between the measured and calculated propagation losses of the HVPSAW has been obtained for C(13) near zero. Although for the GSAW mode the calculated velocity dispersion has been found nearly insensitive to the value of C (13) and consistent with the experimental data, for the HVPSAW, some disagreement between measured and calculated velocities, which increased with ZnO film thickness, has been observed for any C(13 ) value. Theoretical analysis of HVPSAW has revealed the existence of a previously unknown high velocity SAW (HVSAW). The displacement components of this wave have been analyzed as functions of depth and confirmed its pure surface, one-partial character.     

Deposition of ZnO thin films on SiO2/Si substrate with Al2O3 buffer layer by radio frequency magnetron sputtering for high frequency surface acoustic wave devices

ZnO films with c-axis (0002) orientation have been grown on SiO₂/Si substrates with an Al₂O₃ buffer layer by radio frequency magnetron sputtering. Crystalline structures of the films were investigated by X-ray diffraction, atomic force microscopy and scanning electron microscopy. The center frequency of the surface acoustic wave (SAW) device with a 4.8 μm thick Al₂O₃ buffer layer was measured to be about 408 MHz, which was much higher than that (265 MHz) of ZnO/SiO₂/Si structure and approaches that (435 MHz) of ZnO/sapphire. It is a possible way as an alternative for the sapphire substrate for the high frequency SAW device applications, and is also useful to integrate the semiconductor and high frequency SAW devices on the same Si substrate.     

Surface acoustic wave properties of freestanding diamond films

"Ideal" diamond has the highest acoustic velocity of any material known, and is of great interest as a substrate material for high frequency surface acoustic wave (SAW) device structures. However, little is known of the acoustic wave propagation properties of polycrystalline diamond grown by chemical vapour deposition (CVD) techniques, the commercially accessible form of this material. We report on propagation of laser-generated SAW on three forms of freestanding CVD diamond samples, "white" polycrystalline, "black" polycrystalline, and "highly oriented" diamond. Despite differing sample nature, SAW waves propagating along the smooth (nucleation) side of the diamond showed similar velocities in the range 10600-11900 ms(-1). These results are discussed in terms of the potential of each form of CVD diamond for SAW device fabrication.     

Influence of step-like portions on the surface of ZnO/glass SAWfilters on their frequency characteristics

The frequency amplitudes of surface acoustic wave (SAW) filters mass produced of zinc oxide (ZnO) films on glass were found to be different among the filters even when their center frequencies are the same. We attempted various experiments In order to reduce the deviation of amplitudes. We accidentally found that the frequency characteristics and the amplitude deviation could be improved by mirror-polishing the ZnO film surface. In a SAW filter with a ZnO/interdigital transducer (IDT)/glass substrate structure, periodic step-like portions due to the thickness of the finger electrode of IDT and fine roughness were present on the ZnO film surface. As a result of investigating the effect of surface structure on amplitude deviation, the step-like portions did not affect the electromechanical coupling factors but reduced the SAW phase velocities, experimentally and theoretically. In addition, it was clarified that the step-like portions due to the finger electrodes and fine roughness on the ZnO surface caused deviations in the SAW velocities and their reflections, causing the deviation in the amplitude characteristics