织构化SrBi2Nb2O9陶瓷的制备工艺研究

以熔盐法合成各向异性的片状单相SrBi2Nb2O9 (SBN) 陶瓷粉体作为模板,采用模板晶粒生长(TGG)技术成功得制备出织构化SrBi2Nb2O9 (SBN) 陶瓷.通过SEM和XRD分析了烧结制度及模板尺寸对SBN陶瓷晶粒取向率的影响.结果表明,晶粒取向率随着烧结温度、烧结时间、升温速率、模板尺寸的升高而升高.合理控制制备工艺可获得晶粒取向率为0.89的高度织构化SBN陶瓷.织构化SBN陶瓷的相对体积密度随着模板平均粒径的增加而降低.在高温阶段,片状SBN模板晶粒消耗周围的基体粉体沿着流延方向生长,从而最终得到晶粒高度定向的陶瓷.     

钛酸铋钠基陶瓷的烧结机制

应用晶粒生长动力学唯象理论研究籽晶模板对0．94Na0.5Bi0.5TiO3-0．06BaTiO3无铅压电织构陶瓷烧结机制的影响规律,确定了晶粒生长动力学指数和激活能,探讨了籽晶含量对陶瓷晶粒生长的作用机理。实验结果表明：籽晶Bi2.5Na3.5Nb5O18含量小于或等于15wt％时,晶粒生长以界面反应和晶格扩散两种机制控制,籽晶含量大于或等于20wt％时,以界面反应机制为主;取向长条晶需要的激活能小而容易生长,且晶粒尺寸比等轴晶大。     

丝网印刷技术制备高性能织构化K0.45Na0.55NbO3陶瓷（英文）

以片状NaNbO3晶粒为模板,以K4CuNb8O23(KCN)为助烧剂,通过丝网印刷技术制备出晶粒定向的K0.45Na0.55NbO3(KNN)无铅压电陶瓷.片状的NaNbO3模板是以铋层状Bi2.5Na3.5Nb5O18为前驱物,通过熔盐拓扑微观反应制得.织构化(K0.45Na0.55)NbO3陶瓷的晶粒定向程度达到95%,其定向晶粒沿丝网印刷方向平行排列,块体的相对密度达到92%.在平行和垂直于丝网印刷方向的两个面上,织构化(K0.45Na0.55)NbO3陶瓷表现出不同的定向程度,且其介电、铁电和压电性能均明显优于无织构化陶瓷.介电常数εr、压电系数d33、机电耦合系数kp在平行于丝网印刷方向的表面上,分别提高了75%、44%、42%;在垂直于丝网印刷方向的表面上分别提高了35%、30%、35%.相对于目前其它的晶粒定向技术,丝网印刷方法既简单又高效.     

Bi2O3掺杂对Mg4Nb2O9陶瓷的微结构及微波介电性能的影响

采用固相反应法制备了Mg4Nb2O9基微波介质陶瓷,研究了Bi2O3掺杂对Mg4Nb2O9陶瓷烧结行为、相结构、显微结构及微波介电性能的影响。实验结果表明:Mg4Nb2O9陶瓷烧结温度随Bi2O3掺杂量的增加而减小,添加2.0wt%Bi2O3,烧结温度从1350℃降低至1175℃;随Bi2O3添加量从0.0wt%增大到3.0wt%,最强峰(104)晶面间距d值由2.756nm增大至2.769nm;Mg4Nb2O9陶瓷的微波介电性能随Bi2O3掺杂量增加而变化;掺杂2.0wt%Bi2O3的Mg4Nb2O9陶瓷在1175℃保温2小时烧结,获得亚微米级陶瓷,且具有最佳的微波介电性能,εr为12.58,Q×f为71949.74GHz。     

A位LiCe复合取代改性对Na_(0.5)Bi_(2.5)Nb_2O_9陶瓷性能的影响

用固相反应法制备了[(NaBi)1-x(LiCe)x]0.5Bi2Nb2O9(x=0.00,0.04,0.06和0.08)高温铋层压电陶瓷材料,分析了LiCe对Na0.5Bi2.5Nb2O9压电陶瓷的影响。LiCe掺杂促进了样品晶粒生长,引起样品晶格畸变,这极大地提高了该系列陶瓷样品的压电活性。LiCe掺杂还提高了掺杂样品压电、介电性能的温度稳定性。当x=0.06时,该系列陶瓷的压电常数提高到24pC/N,是纯Na0.5Bi2.5Nb2O9的2倍多,平面机电耦合系数为12%,厚度机电耦合系数为25%,加上高的居里温度,低的介电损耗(1kHz只有0.26%)和稳定的压电特性,表明LiCe改性使Na0.5Bi2.5Nb2O9高温铋层压电陶瓷具有很好的高温应用前景。     

织构化工艺在无铅压电陶瓷中的应用

近年来, 织构化工艺作为一种提高无铅陶瓷压电性能的有效方法, 在国内外得到了广泛地研究和关注. 本文综述了几种常用的织构化工艺, 包括热处理技术、非等轴粒子取向固化技术、模板晶粒生长技术、反应模板晶粒生长技术和多层晶粒生长法的发展与应用, 并详细讨论了每一种工艺对陶瓷微结构和织构化生长机制的影响.     

铌酸钾钠基无铅压电陶瓷的制备和掺杂改性研究进展

结合目前有关铌酸钾钠基无铅压电陶瓷的研究,综述了近年来铌酸钾钠基无铅压电陶瓷在粉体制备、陶瓷的成型、烧结以及陶瓷的织构化特别是反应模板晶粒取向等制备技术上研究的新进展,并比较分析了NNK、NNK-LN、NNK-LT-LS等不同的掺杂改性体系在压电性能上的差异和改进.结果显示,改进后的铌酸钾钠基无铅压电陶瓷致密度高,在压电、介电等性能上均有大幅度的提高,并且出现较宽的准同型相界.最后从不同方面展望了今后铌酸钾钠基无铅压电陶瓷在性能改进上的研究趋势及其制备技术上可能的进展.     

MgO和烧结温度对Al_2O_3透明陶瓷显微结构和性能的影响

采用高纯Al2O3粉末为原料,在氢气气氛中烧结了氧化铝透明陶瓷。研究了添加剂MgO和烧结温度对Al2O3透明陶瓷致密化过程、显微结构和性能的影响。实验结果表明,适量掺杂MgO能够抑制晶粒生长,改善烧结性能,提高致密度,0.05%(质量分数)是MgO最佳含量;随着烧结温度的升高,晶粒发育完全,透光率增加,1850℃为最佳烧结温度;在最佳条件下获得的氧化铝透明陶瓷,相对密度为99.72%,平均晶粒尺寸约20μm,总透光率达到93%,显微硬度(HV5)为20.75GPa,抗弯强度达到320MPa。     

压电陶瓷晶粒取向生长技术的研究进展

由于取向生长技术可以显著地提高压电陶瓷的性能, 并且不会降低材料的居里温度, 故压电陶瓷的晶粒取向生长技术已成为研究的热点. 本文分别从定向凝固技术、多层晶粒生长技术、模板晶粒生长技术和反应模板晶粒生长技术等四个方面,归纳和分析了近年来压电陶瓷晶粒取向生长技术的研究进展,并对压电陶瓷晶粒取向生长技术今后的研究和发展提出一些建议.     

ZnO-Nb2O5掺杂SnO2基陶瓷研究

通过常压烧结制备SnO2基陶瓷,研究了ZnO、Nb2O5单掺杂及ZnO-Nb2O5复合掺杂对SnO2基陶瓷的烧结性能及电阻率的影响。采用SEM及XRD对试样分别进行了微观结构观察及物相分析。研究表明,掺杂ZnO能提高陶瓷的体积密度,但对于降低电阻率的影响不明显,当ZnO掺杂量在0.5%～0.75%(质量分数)时,SnO2基体积密度可达到6.67～6.73g/cm3;掺杂Nb2O5不能有效提高烧成陶瓷的体积密度,但能显著降低SnO2基陶瓷的电阻率;0.5%(质量分数)ZnO～1.5%(质量分数)Nb2O5复合掺杂在1450℃下烧成的陶瓷可得到较好的性能,其体积密度可达到6.61g/cm3,常温电阻率为867.84Ω.cm。     

Processing and ferroelectric behavior of textured KSr2Nb5O15 ceramics

<001>-textured KSr₂Nb₅O₁₅ (KSN) ceramics were fabricated in a matrix of SrNb₂O₆ and KNbO₃ powders via reactive templated grain growth (TGG), using <001>-oriented acicular KSN particles as the template for grain growth. KSN phase formation started at 1100 °C and was complete at 1300 °C. Template particles grew at the expense of matrix grains with increasing sintering time and temperature, resulting in improved texture fraction, f. A maximum fraction of 0.98 was obtained in 1.5 wt% Nb₂O₅ and 10 wt% template containing samples sintered at 1450 °C for 6 h. A template content of 10 wt% resulted in a high quality of texture with a narrow distribution of elongated grains in [001]. The highly textured ceramics (f ≥ 0.9) had a remanent polarization of 0.19 C/m² in the polar c direction, [001], as compared to 0.03 C/m² in the non-polar a or b direction and 0.04 C/m² as for the random sample. The estimated saturation polarization (P _sat) was 0.25 C/m² which is comparable to reported KSN single crystal value of 0.25 C/m². This indicates that TGG is a viable method to fabricate textured ceramics having ferroelectric properties close to the single crystals.     

RTGG法制备(Na_(0.84)K_(0.16))_(0.5)Bi_(0.5)TiO_3无铅压电织构陶瓷的研究

以NaCl-KCl熔盐法制备出了片状的Bi4Ti3O12微晶模板,选用此模板分别采用干法和湿法流延工艺结合RTGG技术制备了(Na0.84K0.16)0.5Bi0.5TiO3无铅压电织构陶瓷。研究了不同工艺条件下获得的织构陶瓷烧结行为、织构度、显微组织结构和电性能的变化规律。结果表明,(Na0.84K0.16)0.5Bi0.5TiO3织构陶瓷的烧成温度范围只有10~20℃,其介电性能、压电性能呈现明显的各向异性,沿垂直于流延方向织构陶瓷的各种电学性能均明显优于平行于流延方向的电学性能,两种流延方法在1150℃烧结所得的(Na0.84K0.16)0.5Bi0.5TiO3织构陶瓷在显微组织结构和电性能方面均表现出最强的各向异性,该织构陶瓷的压电常数d33=134pC/N。     

Fabrication of (BiNa)0.5TiO3–BaTiO3 textured ceramics by tape casting

The textured (BiNa)_0.5TiO₃–BaTiO₃ ceramic with a preferred 〈h00〉 orientation was fabricated by tape casting with the plate-like Bi_2.5Na_3.5Nb₅O₁₈ (BINN5) particles as template. Effects of processing parameters and the content of template on the microstructure and the texture fraction of NBT-based ceramics were investigated. The results show that the texture fraction increases with increasing sintering temperature and the increasing content of BINN5. The increased sintering temperature and BINN5 content result in the grain size and the grain shape changing from irregular to plate like. These factors were responsible for the increased degree of orientation. The texture fraction had a maximum value when the sintering temperature is 1225 °C and the optimal content of template is 20 wt.%.     

Effect of excess PbO and sintering temperature on the templated grain growth of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)<Subscript>0.67</Subscript>Ti<Subscript>0.33</Subscript>O<Subscript>3</Subscript> polycrystals

The effect of excess lead oxide and sintering temperature on the microstructure evolution in the templated grain growth (TGG) of the Pb(Mg_1/3Nb_{2/ 3})_0.67Ti_0.33O₃ (PMNT67/33) polycrystals was investigated. By adding excess PbO in the precursor of PMNT ceramics, the textured structure of PMNT polycrystals was obtained near SrTiO₃ (ST) template by the conventional ceramic technique. The texture profiles developed progressively with increasing the concentration of excess PbO. A suitable sintering temperature is also very essential to grow a thick textured layer and avoid a second phase. Furthermore, the through-thickness of the PMNT textured layer is strongly influenced by the uniaxial compact-pressure of preparing the ST seeded PMNT specimen.     

Grain growth kinetics of textured-BaTiO3 ceramics

Textured BaTiO₃ (BT) ceramics were fabricated by templated grain growth method. Effects of sintering conditions on the grain growth process of textured-BT ceramics were investigated. Orientation degree increased initially and then decreased with increasing soaking time. The ceramics were composed of equiaxed matrix grains and brick-like template particles. The brick-like particles aligned parallel to the casting direction by observing from SEM images. A (h00)-preferred orientation was confirmed by SAED and XRD patterns. Mechanism of grain growth in textured-BT ceramics was studied. Both consumption of matrix by templates and grain growth of templates determined the orientation degree of ceramics. The kinetic mechanism for grain orientation was also discussed by the simplified phenomenological kinetic equation. The average activation energies were 364 kJ/mol for matrix grain and 918 kJ/mol for template particle, respectively. Finally, a dense ceramic with 85% grain orientation was obtained after sintering at 1400 °C for 2 h.     

Densification and Grain-Growth Behavior of Various Amounts of SiO2 Doped 8YSCZ/SiO2 Composites

The effect of SiO₂ addition on densification and grain-growth behavior of 8YSCZ/SiO₂ composites was investigated using high purity 8 mol% yttria-stabilized cubic zirconia powders (8YSCZ) doped with 0, 1, 5, 10 wt% SiO₂. The specimens were sintered at 1400°C for 1 hour. It was seen that the sintered density increased with SiO₂ content up to 1 wt% and further increase in SiO₂ content led to a decrease in density. The enhanced density with increasing SiO₂ content up to 1 wt% could be mainly attributable to liquid phase sintering. For grain growth measurements, the specimens sintered at 1400°C were annealed at 1400, 1500, and 1600°C for 10, 50, and 100 hours. The experimental results showed that the grain growth in 8YSCZ/SiO₂ composites occurred more slowly than that in undoped 8YSCZ. Also, the grain growth rate decreased with increasing SiO₂ content. The grain growth exponent value and the activation energy for undoped 8YSCZ were found to be 2 and 289 kJ/mol, respectively. The addition of SiO₂ raised the grain growth exponent value to 3, and activation energy for the grain growth process was increased from 289 to 420 kJ/mol for the addition of SiO₂ from 0 to 10 wt%.     

颗粒级配对固相烧结碳化硅陶瓷的影响

通过粗细碳化硅粉体的颗粒级配实现了致密固相烧结碳化硅(S-SiC)陶瓷的增强增韧, 系统研究了粗粉(~4.6 µm)加入量对烧结试样的致密化、微结构与力学特性的影响。结果表明: 当粗粉加入量不超过75wt%时, 可制备出相对密度≥98.3%的致密S-SiC陶瓷, 烧结收缩率低至14.5%;引入的粗粉颗粒产生钉扎作用, 显著抑制了S-SiC陶瓷中异常晶粒生长, 形成细小的等轴晶粒, 进而提高了S-SiC陶瓷的抗弯强度。同时, 粗粉颗粒的引入导致S-SiC陶瓷的断裂方式由穿晶断裂转变为穿晶-沿晶复合断裂, 使得S-SiC陶瓷的断裂韧性增强。对于粗粉引入量为65wt%的S-SiC陶瓷, 抗弯强度与断裂韧性分别为(440±35) MPa与(4.92±0.24) MPa•m^1/2, 相比于未添加粗粉的S-SiC陶瓷, 分别提升了14.0%与17.1%。     

稀土氧化物对SPS烧结AlN陶瓷电性能的影响

以AlN粉末为原料, 添加稀土氧化物(Sm₂O₃、Y₂O₃), 在氮气气氛下, 采用SPS烧结方法制备AlN陶瓷, 研究稀土氧化物的掺杂对AlN烧结试样相组成、微观结构和电性能的影响。实验表明: Sm₂O₃、Y₂O₃与Al₂O₃反应生成的液相稀土金属铝酸盐会提高AlN陶瓷致密度, 且在晶界处形成导电通路降低了AlN陶瓷电阻率。随着Sm₂O₃掺杂量的增加, 晶界相逐渐由Sm₄Al₂O₉过渡到SmAlO₃, 且Sm₄Al₂O₉对电阻率贡献最大。其中, 3wt% Sm₂O₃掺杂AlN陶瓷电阻率最低, 为      

PbO/B2O3添加剂对PMNT多晶体定向生长的影响

采用添加PbO／B2O3的TGG方法定向生长了PMNT多晶体,结果表明通过调节PbO2／B2O3的比值可以控制PMNT离子在添加剂(第二相)中的扩散速度,从而控制PMNT多晶体沿SrTiO3(001)面定向生长的生长速度和多晶体的取向一致性。PMNT多晶体定向生长层厚度随着B2O3含量的增加线性减薄;同时随着B2O3添加量增加多晶体的取向一致性越来越好。     

SiC_W含量对SiC_W/Si_3N_4复合陶瓷力学及高温微波性能影响

以α-Si_3N_4粉、β-SiC_W为原料,Al_2O_3、Y_2O_3为烧结助剂,采用凝胶注模工艺制备了SiC_W/Si_3N_4复合陶瓷材料,烧结温度为1 650℃,保温1.5h。研究了SiC_W加入含量对SiC_W/Si_3N_4复合陶瓷的微观结构、力学及常温/高温微波吸收性能的影响。结果表明:随着SiC_W含量的增加,SiC_W/Si_3N_4复合陶瓷的抗弯强度和断裂韧性都有先増后减的趋势,当含量为10wt%时,抗弯强度达到最大值505MPa,断裂韧性达9.515MPa·m1/2。常温介电常数在SiC_W含量为10wt%时,实部达最大值12,在12GHz最大吸收值为-21dB。高温介电常数随着SiC_W含量的增加有先增后减的趋势,在含量为10wt%时,实部达到最大值12.5。相比于纯Si_3N_4陶瓷,当SiC_W含量为10wt%时,SiC_W/Si_3N_4复合陶瓷在11.7GHz左右最大吸收可达-27dB,有效吸收频带(小于-5dB)为11.2~12.3GHz。