表面氟化对PMMA聚合物光纤损耗性能的影响

研究了利用表面氟化技术制作PMMA聚合物光纤包层的可行性。从理论上证明了表面氟化能够降低PMMA聚合物表面折射率，以满足光纤对包层折射率的要求。通过实验，比较几种光纤表面氟化前后损耗值的变化，发现表面氟化后光纤损耗明显降低。因此表面氟化技术具有良好的应用前景。     

聚合物光纤技术的最新进展

本文介绍聚合物光纤领域中梯度折射率聚合物光纤的带宽，谱损，稳定性和高速传输实验，以及氟化聚合物光纤，聚合物光纤连接器和放大器方面研究的最新进展。     

低介电常数氟化非晶碳膜多层布线技术

低介电常数氟化非晶碳膜多层有线技术由于随着LSI集成度增大而布线间隔减小，所以布线电容增大而对LSI性能影响也更大。NEC为了解决此问题，开发了采用添加介电常数低的氟的非晶碳膜为新材料的层间介质膜技术。该技术特点如下：采用化学汽相淀积技术形成添氟的碳膜，再确立碳膜     

用于Gbit／s数据链路的渐变折射率聚合物光纤的最佳折射率分布

本文首先阐明了同时考虑了模色散和材料色散时高带宽渐变折射率聚合物光纤（ＰＯＦ）的最佳折射率分布；对模色散和材料色散进行了定量计算，从而研究了ＰＯＦ可达到最在带宽。这一结果显示，即使严格控制折射率的分布，当要求的比特率增大到几个Ｇｂｉｔ／ｓ时，梯度折射率ＰＯＦ的带宽民主要由材料色散所决定。也已证实，材料色散强烈地依赖聚合物基质，同时表明氟化聚合物的材料色散（０．０７８ｎｓ／（ｎｍ·ｋｍ）小于聚合物（     

半导体六氟化钨的合成方法

六氟化钨是用钨金属与不断循环的含少量氟的ＷＦ气体反应制得，整个反应在中热反应器中进行。高纯度ＷＦ６在生产超大规模集成电路中对钨金属的沉积很有帮助。     

用于近红外的大芯径高带宽聚合物光纤

本文采用不完全氟化的丙烯酸聚合物，成功地生产出用于近红外区的高带宽渐变折射率聚合物光纤。由于每个单体单元仅有３个Ｃ－Ｈ键，所以同普通ＰＯＦ相比，其由Ｃ－Ｈ键延伸振荡吸损耗显著降低。ＧＩＰＯＦ在７８０ｎｍ波长下的衰减为１３５ｄＢ／ｋｍ，这比聚丙烯酸甲酯芯ＰＯＲ的衰减要低得多。     

泰氟隆——PFA树脂的熔融挤出工艺

引言“泰氟隆”PFA——氟碳树脂是一属新的热塑性聚合物,它兼备有熔融加工容易和在宽阔的温度范围内与聚四氟乙烯相匹敌的最终使用性能。这类新型聚合物保留了氟碳树脂的碳——氟主链结构加上了全氟烷氧基(PFA)侧链。“泰氟隆”PFA——氟碳树脂——TE9704具有出色的综合性能,这些性能是聚四氟乙烯所具有的:     

基于部分氟化甲基丙烯酸酯聚合物的低损耗渐变折射率塑料光纤的设计

作为家庭光学网络最有希望的选择方案，日本Keio大学的两位IEEE成员提出一种采用廉价的部分氟化聚合物基渐变折射率塑料光纤（GIPOF）组建的新型千兆以太网。选择聚（2，2，2-三氟甲基丙烯酸）（P3F凇）作为GIPOF的基础材料，是由于其透明度高、材料色散低且成本低。研究了其传输特性，并证明这种新研发的GIPOF具有损耗低（在650nm下为71dB／km）、湿度稳定性高和带宽宽（传榆50m时为4．86Cm）的性能。此外还证明，P3FMA基GIPOF以1．25Gbps数据速率可以传输50m。     

光子辅助GaAs的干法腐蚀

业已用氟化氩激光的紫外线辐射完成了单晶砷化镓的大面积腐蚀。该工艺以甲基或三氟甲基与溴基的光化学反应为基础。具有各向异性腐蚀的特点,已腐蚀出小于1μ的线条。     

氟离子敏感场效应晶体管的研究

本文叙述了氟离子敏感场效应晶体管的原理,测试及其结果。这种对氟离子敏感的器件是用溅射的方法,在场效应晶体管的栅极上淀积一层很薄的氟化镧膜制成的。测试结果表明,这种器件灵敏度高,响应快,线性好。本文还从实验出发,对影响器件的稳定性和重复性的原因做了推测。     

ULSI低介电常数材料制备中的CVD技术

综述了制备ULSI低介电常数材料的各种CVD技术。详细介绍了PCVD技术淀积含氟氧化硅薄膜、含氟无定型碳膜与聚酰亚胺类薄膜的工艺,简要介绍了APCVD技术淀积聚对二甲苯类有机薄膜及RTCVD技术淀积SiOF薄膜的工艺。     

Critical Review of Fluorinated Electrolytes for High-Performance Lithium Metal Batteries

Lithium metal batteries (LMBs), due to their ultra-high energy density, are attracting tremendous attentions. However, their commercial application is severely impeded by poor safety and unsatisfactory cycling stability, which are induced by lithium dendrites, side reactions, and inferior anodic stability. Electrolytes, as the indispensable and necessary components in lithium metal batteries, play a crucial role in regulating the electrochemical performance of LMBs. Recently, the fluorinated electrolytes are widely investigated in high-performance LMBs. Thus, the design strategies of fluorinated electrolytes are thoroughly summarized, including fluorinated salts, fluorinated solvents, and fluorinated additives in LMBs, and insights of the fluorinated components in suppressing lithium dendrites, improving anodic stability and cycling stability. Finally, an outlook with several design strategies and challenges will be proposed for novel fluorinated electrolytes.     

XPS study of the degradation mechanism of fluorinated anti-sticking treatments used in UV nanoimprint lithography

Thanks to their low surface energy, fluorinated anti-sticking layers are widely used in UV nanoimprint lithography (UV-NIL) to treat the mold and facilitate its separation from the imprinted resist. However, it has been reported that release properties of the stamp deteriorate with repeated imprint operations. In this paper, X-ray photoelectron spectroscopy is used to study the mechanism of the fluorinated treatment degradation. A specific experimental protocol is used in order to avoid further degradation under X-ray exposure. It has been observed that a large amount of fluorinated molecules are removed in the first imprint steps and deposited on the surface of the imprinted resist. After this first stage, we observed that fluorinated molecules are progressively degraded along their chain during the NIL process.     

负性含氟液晶材料的电子轰击质谱分析

利用气质联用对3类6个系列共15种负性含氟液晶化合物进行了电子轰击源(EI)质谱分析,总结了3类负性含氟液晶化合物的质谱裂解规律,并阐述了某些化合物的质谱裂解途径。其中,烷基双环己烷二氟取代苯甲醚液晶化合物的特征离子主要是为环己烷取代基开环的裂解碎片,其m/z主要为226、183、157等;烷基环己基烷氧基三氟取代联苯液晶化合物的特征碎片为环己烷开环碎片及氟取代苯环掉氟的碎片,其m/z主要为(246 A)、(223 A)、(220 A)和(207 A)等(A为15或17);四氟取代联苯酚酯类液晶化合物的特征离子为酯基断裂的碎片和氟取代苯环掉氟产物,其m/z为272或271、229、200、180等。     

Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET

The superior characteristics of the fluorinated hafnium oxide/oxynitride (HfO₂/SiON) gate dielectric are investigated comprehensively. Fluorine is incorporated into the gate dielectric through fluorinated silicate glass (FSG) passivation layer to form fluorinated HfO₂/SiON dielectric. Fluorine incorporation has been proven to eliminate both bulk and interface trap densities due to Hf-F and Si-F bonds formation, which can strongly reduce trap generation as well as trap-assisted tunneling during subsequently constant voltage stress, and results in improved electrical characteristics and dielectric reliabilities. The results clearly indicate that the fluorinated HfO₂/SiON gate dielectric using FSG passivation layer becomes a feasible technology for future ultrathin gate dielectrics applications.     

Comparison of Two D−A Type Polymers with Each Being Fluorinated on D and A Unit for High Performance Solar Cells

For the purpose of investigating the effect of fluorination position on D?A type conjugated polymer on photophysical and photovoltaic properties, two types of fluorinated polymere are synthesized, HF with fluorination on electron‐donating unit and FH with fluorination on electron‐accepting unit. Compared to non‐fluorinated polymer, fluorinated polymers exhibit deeper HOMO energy levels without change of bandgap and stronger vibronic shoulder in UV?visible absorption, indicating that fluorination enhances intermolecular interaction. HF with fluorinated D unit exhibits well‐developed fibril network, low bimolecular recombination and high hole mobility, which lead a high PCE of 7.10% in conventional single‐junction solar cells, which is higher than the PCE (6.41%) of FH with fluorinated A unit. Therefore, this result demonstrates that fluorination on electron‐donating unit in D?A polymers could be a promising strategy for achieving high performance polymer solar cells.     

Degradation and surfactant-aided regeneration of fluorinated anti-sticking mold treatments in UV nanoimprint lithography

In nanoimprint lithography, the most common approach to prevent resist to adhere to the mold is to graft a fluorinated anti-sticking layer on the mold’s surface. But it is known that these layers suffer from degradation after a certain number of imprints. In this work, we study the influence of the presence, type and quantity of fluorinated surfactant additives in the resist formulation on the degradation of the mold’s treatment. It is found that the presence of a fluorinated surfactant drastically increases the possible maximal number of imprints before retreatment. Also, we observed that fluorinated surfactants with a silane end-group are able to be adsorbed at the surface of the mold after repeated imprints to progressively replace the initial mold’s treatment. Nevertheless, a balance has still to be found between quantity, reactivity and type of surfactant to maintain a smooth and extremely thin fluorinated layer at the surface of the mold.     

注F栅介质抗电离辐射损伤机理

对含 F MOS结构的抗电离辐射特性和机理进行了系统研究。其结果表明 :F减少工艺过程引入栅介质的 E’中心缺陷和补偿 Si/ Si O2 界面 Si悬挂键的作用 ,将导致初始氧化物电荷和界面态密度的下降 ;栅 Si O2 中的 F主要以 F离子和 Si- F结键的方式存在 ;含 F栅介质中部分 Si- F键替换 Si- O应力键而使 Si/ Si O2 界面应力得到释放 ,以及用较高键能的 Si- F键替换 Si- H弱键的有益作用是栅介质辐射敏感性降低的根本原因 ;含 F CMOS电路辐射感生漏电流得到抑制的主要原因是场氧介质中氧化物电荷的增长受到了明显抑制。     

Preparation methods and characteristics of fluorinated polymers for mold replication

Mold replication process using fluorinated materials by thermal nanoimprint and UV nanoimprint was investigated by three different experiments. Firstly, the influence of particulate contamination was examined. It was estimated that the damage to the master mold by particles can be suppressed by applying a thicker polymer layer for mold replication. Secondly, it was shown that the surface properties of UV curable resin containing fluorinated components can be controlled by the curing conditions. Thirdly, the stability of the surface properties of the fluorinated materials was compared. The surface of the perfluorinated polymer showed high stability against UV imprint. UV cured molds have lower stability but they are suitable for disposable molds which can be used for several times to several tens of times.     

低k氟化非晶碳层间介质对芯片性能的影响

讨论了通过合理设计的工艺流程将低k氟化非晶碳材料应用到制造工艺中作为互连介质对集成电路性能的影响。基于一个互连结构简化模型计算出采用低k氟化非晶碳材料作为互连介质后RC延迟、功率耗散和线间串扰的变化情况。采用低k氟化非晶碳介质后,RC延迟和功率耗散随着互连长度的增大而减小,线间串扰也得到显著抑制。