Computation of sensitivities of IC interconnect parasitic capacitances to the process variation with dual discrete geometric methods

Sensitivity analysis methods help to deal with the challenges of process variation in extraction of parasitic capacitances in an integrated circuit. The dual discrete geometric methods (DGMs), which have been recently utilized to extract parasitic capacitances, are reviewed. The computation method based on the dual DGMs for sensitivities of capacitances with respect to the given process parameters is presented. As the dual DGMs utilize scalar electric potential is unknown, the capacitances are obtained effectively, and then the sensitivities are calculated conveniently.     

磁场作用下的一个含类氢施主杂质二维量子环中的电子能态

Using the finite element method, we investigate the lowest and first few excited state energies in a twodimensional GaAs quantum ring(QR) with a hydrogenic donor impurity and effective mass approximation under a uniform magnetic field perpendicular to the ring plane. We study in detail the dependence of the energy spectrum with different angular momentum on the inner radius, the outer radius and width of the QR, the magnetic field and impurity position. The results reveal that the electron energies increase with the inner radius while decrease with the outer radius and width of the QR; for a fixed ring, the magnetic field induces the increase of the electron energies. Moreover, the existence of impurity reduces energy levels, and the energy levels depend highly on the impurity position, which decreases as the impurity is far away from the center of the QR. Also, the dependence of the angular momentum on the energy spectrum is analyzed in detail.     

一种对三维芯片中硅通孔进行完整建模与寄生参数提取的有效方法

针对三维芯片中硅通孔（through-silicon via, TSV）的准确电学建模问题,本文提出了一种电阻电容（RC）电路模型以及相应的有效参数提取技术。该电路模型同时考虑了半导体效应与静电场影响,适合于低频与中频的电路信号范围。该方法采用一种基于悬浮随机行走（floating random walk, FRW）算法的静电场电容提取技术,然后将它与刻画半导体效应的MOS电容结合,形成等效电路模型。与Synopsys公司软件Sdevice所采用的对静电场/半导体效应进行完整仿真的方法相比,本文方法计算效率更高,并且也能处理一般的TSV电路版图。对多个含TSV的结构进行了计算实验,结果验证了本文方法在从10KHz到1GHz频率范围内的建模准确性,也显示出它相比Sdevice方法最多有47倍的加速比。     

一种改进的二维Hough变换提取激光光斑参数方法

文章提出了一种改进的二维Hough变换提取激光光斑参数的方法。根据不共线三点决定一个圆的原理,利用目标图像任一边缘点的梯度方向信息,按规则选取目标边缘上的其它两个点,将三个边缘点作为一组数据,求解圆形目标的方程。对参数空间中的二维矩阵数组投票,得到圆形目标的中心坐标。对归一化半径直方图进行滤波,求得圆形目标的半径。将该算法运用于实际探测到的激光光斑图像,在运行时间及定位目标图像的准确度上都取得了较好的结果。     

基于分段预留法的互连线二维电容提取技术

随着制造工艺的不断演进、电路规模的不断增大,集成电路逐渐进入后摩尔时代。如何准确快速地进行寄生电容参数提取,对于保证设计质量、减少成本和缩短设计周期变得越来越重要。文章提出了一种基于分段预留法的二维电容提取技术,该技术基于改进的有限差分法,采用非均匀网格划分和求解不对称系数矩阵方程,模拟互连结构横截面,可以高效计算出主导体的单位长度总电容以及主导体和相邻导体之间的单位长度耦和电容。为了验证提出方法的准确性和有效性,进行了一系列验证实验。实验结果表明,提出的互连线二维电容提取技术在寄生电容计算精度上平均提高了140倍,运行时间平均缩了10%。     

用查表法快速实现二维8×8离散余弦逆变换的研究

提出一种基于查表法的二维8×8离散余弦逆变换(2D 8×8 IDCT)的快速算法,其查找表LUT(Look-Up Table)结构的设计是基于二维8×8 DCT的基本图像.利用两种技术减小查找表长度:①利用基本图像的对称特性;②通过对离散余弦正变换(DCT)和量化过程的分析,推导出每个量化后DCT系数的取值范围.使得查找表只有10.9746K项数据,若量化矩阵具有对称性q(u,v)=q(v,u),LUT的长度还可减少近半.新算法利用查表法消除IDCT中乘法运算,并利用图像数据的特点和基本图像的对称特性大大减少加法次数,提高了计算速度.以多幅标准图像为样本数据进行实验,结果表明:新算法实现2D 8×8 IDCT运算平均只需加法182次.与当前运算量最小的Feig快速算法做比较,新算法避免了乘法,所需加法次数也降低了约15%.     

Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

In this work, forward current voltage characteristics for multi-quantum wells Al_0.33Ga_0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential evolution (DE), particle swarm optimization (PSO) and artificial bee colony (ABC) have been chosen as candidate heuristics algorithms, while Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.     

高分辨率双快门模式CMOS图像传感器控制电路的设计与仿真

主要介绍了一种可用于空间信息获取的高分辨率双快门模式CMOS图像传感器,分析比较了该CMOS图像传感器卷帘式和同步式两种快门模式的工作原理和特点,设计了两种快门模式的时序控制电路并进行了仿真和验证,结果表明了控制电路设计的正确性,并可适用于空间微纳型卫星的成像系统。