CO_2激光预处理1.06μm高反射膜对吸收和损伤阈值的影响

本文报道用CO_2激光作光学薄膜预处理对薄膜的吸收和损伤阈值的影响。实验对K_9玻璃、硅片、石英作基底的三组样品作了研究,结果表明,对石英为基底的TiO_2/SiO_211层高反膜进行了CO_2激光辐照处理能提高损伤阈值。     

铝镜激光损伤的热过程实时研究

介绍利用光热偏转技术对铝镜及反射率增强铝镜的激光损伤的热过程进行实时研究。通过研究，观察铝镜及反射率增强铝镜的激光损伤的光热偏转信号的变化．初步了解了铝镜的损伤过程及机理，及其介质膜的存在对损伤过程的影响。     

利用电介质保护膜提高铝镜和硅窗口的抗激光强度

从加快热传导及其减小光能吸收两个方面入手，讨论了通过增镀介质膜提高铝镜和硅窗口的激光对抗能力的具体措施及其可行性。在１．０６μｍ红外激光与铜蒸气激光损伤实验中，经过加固的样品的损伤阈值均有所提高，从而验证了加固措施的合理性。     

硅片背面激光损伤的吸杂效果

本文介绍了硅片背面激光损伤吸杂实验,用金相显微镜观察证实了高温退火后激光损伤的热稳定性,研究了激光损伤对氧化层错(OSF)和载流子寿命的影响,用中子活化分析法测出了吸杂效果。     

10.6μm激光对钛、锆光学薄膜的损伤

本文报道了1.06μm 激光对TiO_2、ZrO_2和Ti_3O_5的单层膜和多层膜的损伤阈值和损伤形貌.研究了损伤阈值与膜厚、缺陷和保护膜之间的关系.     

多层介质膜光栅和介质膜反射镜抗激光损伤阈值研究

对多层介质膜光栅以及介质膜反射镜的激光损伤阈值进行了系统的研究。测试方法采用国际测试标准。测试结果表明,介质光栅的损伤阈值远低于未刻蚀的多层介质膜。对样品损伤形貌的扫描电镜照片分析发现,相比于未刻蚀的多层介质膜,介质膜光栅的初始损伤主要发生在光栅槽形的侧壁,且损伤主要是由驻波场的空间分布引起的本征吸收、制备过程中引入的杂质污染以及刻蚀过程中HfO2的化学计量机失衡引起的。     

不同延时的组合脉冲激光致硅表面损伤研究

为了研究组合脉冲激光与单晶硅材料的相互作用过程,采用两束脉宽分别为7ns和1ms的脉冲激光复合作用的方式,进行了单束毫秒脉冲激光和组合脉冲激光辐照硅片的实验研究,并结合数值计算对比了两种激光工作模式辐照造成的表面损伤形貌;根据组合脉冲激光延迟时间的不同将损伤形貌分为3类,对熔融深度和表面损伤半径做了进一步的研究。结果表明,组合脉冲激光的损伤效应更为严重,包括解理裂纹、烧蚀和皱褶,表面损伤半径主要取决于入射毫秒脉冲激光的能量密度,而熔融深度随延迟时间的增加而减小;毫秒脉冲激光的预加热以及纳秒脉冲激光造成的表面损伤与后续毫秒脉冲激光的相互作用,使得组合脉冲激光具有更好的损伤效果。该研究结果可为今后组合脉冲激光加工半导体材料提供参考。     

飞秒激光作用下啁啾镜膜层内损伤相关动力学

光学元器件的激光损伤问题,一直以来都困扰着超强超短激光系统的进一步发展。飞秒激光领域,激光脉冲引起的光学器件损伤主要由材料的本征特性决定。光学材料内的多光子电离、雪崩电离、导带电子弛豫等一系列非线性过程,与材料的激光损伤过程密切相关。利用泵浦探测技术,采用中心波长为800 nm,重复频率1 kHz的飞秒激光脉冲,对Nb2O5/SiO2啁啾镜介质膜的内部与飞秒激光损伤相关的超快动力学进行了研究。发现强的泵浦光脉冲辐照结束后飞秒乃至几十皮秒的范围内,啁啾镜对探测光的反射率有一定程度的下降。反射率降低的主要原因是泵浦光在介质膜的Nb2O5层内激发的大量的自由电子对探测光吸收所致,且该过程对激光诱导损伤过程起主导作用。通过反射率的变化,对其介质膜内导带电子弛豫过程进行探究,测定得到其衰减寿命,分别为1.31、6.88、22.34 ps。     

激光预处理中薄膜损伤形貌对预处理效果的影响

采用亚阈值激光能量对光学元件进行激光预处理后,其损伤阈值可以提高两三倍。在激光预处理过程中,不可避免地会使光学元件产生损伤,若产生的损伤不影响光学元件的使用性能,则原则上可以接受。首先介绍了HfO2/SiO2多层高反膜S-on-1损伤阈值测试方法,实验研究了激光预处理过程中光学薄膜元件的损伤过程,分析了预处理过程中薄膜损伤形貌对其光学性能及抗激光损伤阈值的影响。结果表明,对膜系为G/（HL）11H2L/A的HfO2/SiO2多层高反膜进行激光预处理,最外层SiO2层的破坏不影响薄膜整个反射率曲线。相反,由于消除了HfO2层的节瘤缺陷,薄膜的损伤阈值得到大幅度的提高。     

超短脉冲激光对无机硅材料的损伤

通过控制作用于材料表面的激光能量和脉冲数量,实验研究了800nm,50fs,1kHz激光作用下融石英玻璃和硅片的破坏机制和损伤规律,计算了材料的损伤阈值与脉冲能量以及脉冲数量的依赖关系,并采用简化的理论模型计算了熔石英玻璃材料的损伤阈值与激光脉宽以及光子能量之间的依赖关系。对这两种无机硅材料在飞秒脉冲作用后的微区结构改变进行了扫描电子显微镜(SEM)测试,研究了其形貌特征。结果表明,硅片是由缺陷中的导带电子作为种子电子引发雪崩电离导致材料损伤,而熔石英玻璃是由多光子电离激发出导带电子引发雪崩电离导致材料损伤。     

Two-step fabrication of thin film encapsulation using laser assisted chemical vapor deposition and laser assisted plasma enhanced chemical vapor deposition for long-lifetime organic light emitting diodes

A thin film encapsulation layer was fabricated through two-sequential chemical vapor deposition processes for organic light emitting diodes (OLEDs). The fabrication process consists of laser assisted chemical vapor deposition (LACVD) for the first silicon nitride layer and laser assisted plasma enhanced chemical vapor deposition (LAPECVD) for the second silicon nitride layer. While SiN_x thin films fabricated by LAPECVD exhibits remarkable encapsulation characteristics, OLEDs underneath the encapsulation layer risk being damaged during the plasma generation process. In order to prevent damage from the plasma, LACVD was completed prior to the LAPECVD as a buffer layer so that the laser during LACVD did not damage the devices because there was no direct irradiation to the surface. This two-step thin film encapsulation was performed sequentially in one chamber, which reduced the process steps and increased fabrication time. The encapsulation was demonstrated on green phosphorescent OLEDs with I–V-L measurements and a lifetime test. The two-step encapsulation process alleviated the damage on the devices by 19.5% in external quantum efficiency compared to the single layer fabricated by plasma enhanced chemical vapor deposition. The lifetime was increased 3.59 times compared to the device without encapsulation. The composition of the SiNx thin films was analyzed through Fourier-transform infrared spectroscopy (FTIR). While the atomic bond in the layer fabricated by LACVD was too weak to be used in encapsulation, the layer fabricated by the two-step encapsulation did not reveal a Si–O bonding peak but did show a Si–N peak with strong atomic bonding.     

激光脉宽对光学薄膜元件热损伤的影响

纳秒量级及以下脉宽激光致光学薄膜元件的损伤研究持续了几十年,但纳秒量级以上脉宽却很少提及。因此,针对10 ns~1 ms量级区间不同脉宽激光辐照光学薄膜元件产生的热损伤进行了研究,计算了高反膜、增透膜和干涉滤光片三种典型光学薄膜元件的温度场分布,并分析了其激光热损伤特性。结果表明,对于长脉宽激光,热扩散深度大,薄膜损伤的电场效应被削弱,热传导效应在损伤中占据主导地位,损伤可至基底;短脉宽激光损伤对薄膜内部的电场分布更为敏感,损伤发生在温度最高值附近的膜层区域。进而开展了10 ns与1 ms脉宽激光致光学薄膜元件的损伤实验,损伤阈值及形貌特征与温度场计算结果显示的热损伤特性相符。     

(Bi,Pb)2Sr2CaCu2O8薄膜的激光感生电压效应

采用紫外脉冲激光沉积技术和高低温沉积工艺,在LaAlO3(100)平衬底及倾斜衬底上成功制备了c轴取向的(Bi,Pb)2Sr2CaCu2O8[(Bi,Pb)-2212]薄膜;研究了在倾斜LaAlO3(100)单晶衬底上生长的(Bi,Pb)-2212薄膜激光感生热电电压信号与沉积条件及入射激光能量的关系。为避免(Bi,Pb)-2212薄膜被激光剥蚀或蒸发,还初步研究了MgO保护层对(Bi,Pb)-2212薄膜激光感生电压信号的作用,结果表明MgO层能够显著增强激光感生热电电压效应。     

激光对光学薄膜损伤的热冲击效应

计算了薄膜在高功率脉冲激光作用下截面温度场和应力场分布。分析了热冲击在光学薄膜激光损伤中的作用，并用调Ｑ１．０６μｍ脉冲激光对ＺｒＯ２单层膜损伤，讨论了不同激光强度下薄膜截面温度场与应力场分布，揭示了热冲击在ＺｒＯ２单层膜损伤中的机理和过程。     

近阈值能量密度下薄膜的激光损伤特点

采用毫米量级大光斑的近单模的激光器 ,控制入射薄膜表面的激光能量 ,获得了几种常见单层膜和增透膜的损伤形貌 ,实验结果表明 ,薄膜的损伤可区分为熔化型和应力型两种 ,薄膜表面等离子体对损伤斑点的扩大有重要作用。     

近阈值能量密度下薄膜的激光损伤特点

采用毫米量级大光斑的近单模的激光器,控制入射薄膜表面的激光能量,获得了几种常见单层膜和增透膜的损伤形貌,实验结果表明,薄膜的损伤可区分为熔化型和应力型两种,薄膜表面等离子体对损伤斑点的扩大有重要作用。     

Thickness scaling issues of Ni silicide

Ni silicidation processes without a capping layer and with a TiN capping layer are studied from the point of view of process window, morphology of the resulting silicide, and mechanisms of degradation at higher temperatures. The thermal stability of NiSi films on As- and on B-doped (100) Si substrates was investigated for Ni film thicknesses ranging from 5 to 30 nm. While agglomeration was the mechanism of degradation for the thin films, both morphological changes and transformation to NiSi₂ were possible for thicker films depending on anneal temperature and time. Activation energy of 2.5 eV for NiSi on n+ (100) Si and p+ (100) Si was determined for the process of morphological degradation. The measured temperature and time dependences for the thermal degradation of NiSi films suggest that the activation energy for transformation to NiSi₂ is higher than for morphological degradation.     

Characterization of excimer laser annealing of ion implanted Si

An evaluation of a XeCl excimer laser for the laser processing of Si is reported. The annealing quality of ion-implantation damage, as measured by the crystalline perfection of the regrown layer and by p-n junction characteristics, is similar to that obtained with ruby or Nd:YAG lasers. However, the wide energy window between annealing and surface damage, the flat smooth surface obtained after laser irradiation, the capability of providing deep surface melting, and other features, indicate that XeCl and perhaps other excimer lasers is nearly ideal for semiconductor processing.     

光电探测器的激光破坏（损伤）阈值分析

本文系统收集各种光电探测器及其相似材料在受到激光辐照时所导致的软、硬破坏效应（有时称为激光损伤）,综合对比分析各种破坏阈值的大小,为激光与光电探测器相互作用的研究提供一个较为全面系统的参考。