ARE法制取立方氮化硼膜时提高膜基结合力方法的研究

采用活性反应离子镀装置,通过电子束蒸镀金属纯硼,在氮、氩混合气体等离子体中,合成了ｃ－ＢＮ膜。对沉积后的ｃ－ＢＮ膜,在充入高纯氮的条件下,原位进行消应力退火处理以提高膜与基体的结合力。用富立叶变换红外透射谱分析ｃ－ＢＮ膜的结构,用弯曲法测量膜的残余压应力,通过划痕试验测量膜与基体的结合力。沉积态的 ｃ－ＢＮ膜的残余压应力高达６．６ ＧＰａ,当退火温度不超过６００℃时,膜的残余压应力消减效果不大;但当经８００℃退火 １ｈ后,ｃ－ＢＮ膜的残余压应力大幅度下降,降到约 ２ ＧＰａ,膜与基体的结合力有很大提高,划痕试验时临界载荷高达 １４ Ｎ;而富立叶变换红外分析结果表明,高温退火不改变ｃ－ＢＮ膜的相结构。     

c—BN薄膜研究进展

立方氮化硼（ｃ－ ＢＮ） 在机械、热、电子及光学方面有许多优异性能,因此世界上有很多研究人员从事ｃ－ ＢＮ 薄膜制备的研究,近年来薄膜沉积技术和ｃ－ ＢＮ 薄膜质量都已取得显著进步。介绍ｃ － ＢＮ 薄膜的用途、结构、制备方法及存在的问题。重点总结了控制ｃ－ ＢＮ 相形成的关键因素及ｃ－ ＢＮ 相形成机理。     

镀Ti立方氮化硼（cBN）与玻化SiO_2－Na_2O－B_2O_3结合剂的作用

为了防止玻化ＳｉＯ２－Ｎａ２Ｏ－Ｂ２Ｏ３结合剂烧结时对立方氨化硼（ｃＢＮ）的侵蚀，并实现ｃＢＮ晶体与结合剂间的化学键结合，本文用ＤＴＡ、ＸＲＤ、ＳＥＭ、ＥＰＭＡ等研究了Ｔｉ镀层与ＣＢＮ界面在６００～１２００℃温度范围的界面反应过程及界面成分结构特征，讨论了镀ＴｉｃＢＮ与结合剂复合体在烧结过程中的成分结构及性能．结果表明：Ｔｉ镀层与ｃＢＮ晶体在６００℃以上，以反应扩散的形式发生界面反应形成ＴｉＮ，８００℃以上形成ＴｉＢ２及ＴｉＢ，这些在ｃＢＮ表面外延生长的难熔化合物使Ｔｉ镀层与ｃＢＮ牢固结合并阻止了结合剂中的碱性组分对ｃＢＮ的侵蚀，镀ＴｉｃＢＮ晶体与结合剂则由低价的氧化钛为中介实现良好结合．     

高温高压下立方氮化硼晶体的生长机制

在４．５－５．０ＧＰａ，１５００－１８００℃范围内，对在Ｌｉ基复合氮化物或氮硼化物和催化体系中以及其中添加Ｌｉ８ＳｉＮ４后合成ｃＢＮ进行了研究。探讨了ｃＢＮ晶体的表面构造和生长机制，研究了由六方氮化硼向立方氮化硼转变过程中硅的存在在行为。本实验中合成的立方氮化硼为具有光泽的棕色透明单晶。     

采用不同载气混合B_3N_3H_6原料制备B－N薄膜

采用Ｎ２、Ｈ２和Ａｒ三种载气混合的Ｂ３Ｎ３Ｈ６原料，余辉微波等离子体增强化学气相沉积ＢＮ薄膜．通过漫反射富氏变换红外光谱，Ｋｎｏｏｐ硬度和附着性划痕试验分析薄膜的结构，成分和性能．结果表明，Ｎ２和Ｈ２混合的Ｂ３Ｎ３Ｈ６原料制备的薄膜具有ｃ～ＢＮ和ｈ－ＢＮ双相组织，Ａｒ混合的Ｂ３Ｎ３Ｈ６原料具有ｈ－ＢＮ单相组织．载气直接参与Ｂ３Ｎ３Ｈ６气相合成ＢＮ的反应过程，决定薄膜的结构特征，影响薄膜的性能．     

立方氮化硼（c－BN）膜的制备、性能及应用

本文综合分析了立方氮化硼（ｃ－ＢＮ）膜的制备方法，介绍了ｃ－ＢＮ膜的结构及其机械、电学、光学和热学性能。最后总结了ｃ－ＢＮ膜在机械和电子领域的应用概况。     

ARE法沉积的立方氮化硼薄膜生长过程的研究

采用逆序法研究了通过活性反应离子镀技术沉积在单晶硅（１００）上的ｃ－ＢＮ膜生长过程。在Ｘ射线谱分析仪上,用氩离子剥离ｃ－ＢＮ膜并进行膜的成分的深度分布及不同刻蚀深度处膜的价态分析,用富立叶变换红外透射不同刻蚀深度处的膜的相结构。结果表明：在此生长条件下,ｃ－ＢＮ不能在基底上直接成核,而是先在基底上形成一层ｎ－ＢＨ然后ｃ－ＢＮ在其上生长。对这种生长,引用ｃ－ＢＮ膜形成机制的压应力模型给予了解释。     

Nb镀层对c—BN—玻化陶瓷结合剂界面成分结构的影响

用ＤＴＡ、ＸＲＤ、ＳＥＭ、ＥＰＭＡ等研究了Ｎｂ镀层与ｃ－ＢＮ晶体在６００－１０００℃范围的界面反应过程、界面成分和结构特征，讨论了烧结时Ｎｂ镀层与ＳｉＯ２－Ｎａ２Ｏ－Ｂ２Ｏ３玻化结合剂的作用，结果表明：Ｎｂ镀与ｃ－ＢＮ晶体在６００℃以上发生界面反应，外延生长形成ＮｂＮ，８００℃以上形成ＮｂＢ２，它们使Ｎｂ镀层与ｃ－ＢＮ牢固结合并阻止结合剂中的碱性组分对ｃ－ＢＮ的侵蚀，镀Ｎｂ的ｃ－ＢＮ表层的Ｎｂ则作     

Nb镀层对c－BN－玻化陶瓷结合剂界面成分结构的影响

用ＤＴＡ、ＸＲＤ、ＳＥＭ、ＥＰＭＡ等研究了Ｎｂ镀层与ｃ－ＢＮ晶体在６０－１０００℃范围的界面反应过程、界面成分和结构特征，讨论了烧结时Ｎｂ镀层与ＳｉＯ２—Ｎａ２Ｏ－Ｂ２Ｏ３玻化结合剂的作用．结果表明：Ｎｂ镀层与ｃ—ＢＮ晶体在６００℃以上发生界面反应，外延生长形成ＮｂＮ，８００℃以上形成ＮｂＢ２，它们使Ｎｂ镀层与ｃ－ＢＮ牢固结合并阻止结合剂中的磁性组分对ｃ－ＢＮ的侵蚀，镀Ｎｂ的ｃ－ＢＮ表层的Ｎｂ则作为活性金属实现与玻化结合剂的化学健合．     

镀Ti立方氮化硼（cBN）与玻化SiO2—Na2O—B2O3结合剂的作用

为了防止玻化ＳｉＯ２－Ｎａ２Ｏ－Ｂ２Ｏ３结合剂烧结时对立方氮化硼（ｃＢＮ）的侵蚀，并实现ｃＢＮ晶体与结合剂间的化学键结合，本文用ＤＴＡ、ＸＲＤ、ＳＥＭ、ＥＰＭＡ等研究了Ｔｉ镀层与ｃＢＮ界面在６００￣１２００℃温度范围的界面反应过程及界面成分结构特征，讨论了镀ＴｉｃＢＮ与结合剂复合体在烧结过程中的成分结构及性能。结果表明：Ｔｉ镀层与ｃＢＮ晶体在６００℃以上，以反应扩散的形式发生界面反应形成ＴｉＮ，８     

On the choice of hexagonal boron nitride for high pressure phase transformation using the catalyst solvent process

The degree of three-dimensional ordering, particle-size distribution and purity of two types of hexagonal boron nitride have been studied with a view to establish any possible correlation between these characteristics with the conversion of hexagonal form to cubic phase at high pressure and high temperature using magnesium as the catalyst solvent. The crystalline phases formed at high pressure and high temperature have been studied and the dependence of degree of graphitization of boron nitride and purity on the cubic boron nitride conversion discussed.     

On the possibility of dynamic synthesis of ultradispersed crystalline phases of the B-C-N system in a hyperhigh-speed plasma jet

The results have been considered of the research on the possibility of cubic boron nitride (cBN) and cubic carbon nitride (c-C₃N₄) dynamic synthesis in hyperhigh-speed pulse jet of boron-carbon electric-discharge plasma, which flows into the space with a nitrogen medium. The source of the plasma is a high-current pulse coaxial magnetoplasma accelerator with a graphite accelerating channel. The data obtained have shown the possibility to synthesize ultradispersed cubic boron nitride and covalent carbon nitride.     

Hydrochloric Acid-Promoted Synthesis of cBN via Hydrothermal Route

Single phase crystalline cubic boron nitride （cBN） with high yield was prepared by hydrothermal route at low temperature, using hydrochloric acid （HCI） as the promoter. The promotion effect of HCI on the synthesis of cBN is briefly discussed.     

立方氮化硼薄膜的制备工艺

介绍了几种立方氮化硼（C—BN）薄膜的制备工艺,并对薄膜中立方氮化硼相形成的影响因素进行了讨论。     

Entwicklung multifunktionaler,kubischer Bornitridschichten

Multifunctional cubic boron nitride coatings Low stress, thick cubic boron nitride films can be produced nowadays by means of almost all PVD and PECVD processes based on tailored coating concepts. This can be achieved by incorporating into the films a suitable third element at a correct concentration, for example 5 at.‐% oxygen in addition to boron and nitrogen. During processing, a defined, intense ion bombardment on the growing surface is necessary to achieve a phase transformation from hexagonal to cubic boron nitride. The relevant process parameters are documented and published in so‐called parameter maps. The films were thermally treated after deposition at 900°C vacuum for 2 hours.     

Effect of boron on the crystallization of cubic BN in the Li<Subscript>3</Subscript>N-BN system

The introduction of 1 to 5 wt % boron into the starting mixture has been shown to influence the crystallization behavior of cubic boron nitride in the Li₃N-BN system. We have studied the effect of boron content on the conversion, particle size distribution, lattice parameter, and abrasive ability of cubic boron nitride powders and also the effect of neutron irradiation on the paramagnetic structure of the BN particles.     

Synthesis of boron carbide powder from hexagonal boron nitride

We report the synthesis of boron carbide powder via the reaction of hexagonal boron nitride with carbon black. The reaction between hexagonal boron nitride and carbon black completed at 1900 °C for 5 h in vacuum. The particle sizes of the synthesized boron carbide powder were about 100 nm from transmission electron microscopy. The possible reaction mechanism was that hexagonal boron nitride decomposed into elemental boron and nitrogen even when there was no carbon at a relatively low rate, and introduction of carbon into hexagonal boron nitride powder facilitated the decomposition process; the boron from the decomposition of boron nitride reacted with carbon to form boron carbide.     

Crystallization of cubic boron nitride in the system Li<Subscript>3</Subscript>N-BN (4–10 wt % Li<Subscript>3</Subscript>N)

The crystallization behavior of cubic boron nitride in the Li₃N-BN system has been shown to change in the range 4 to 10 wt % lithium nitride. We have determined the conversion, size composition, lattice parameter, abrasive ability, and paramagnetic structure of cubic boron nitride powders containing 4 to 10 wt % Li₃N.     

立方氮化硼薄膜制备与性质研究新进展

立方氮化硼(c-BN)具有优异的物理和化学性质, 在力学、光学和电子学等方面有着广泛的应用前景. 自上世纪80年代开始, 低压沉积c-BN薄膜的研究迅速发展, 到90年代中期达到高潮, 随后进展缓慢, c-BN薄膜研究转入低潮. 近年来, c-BN薄膜研究在几方面取得了突破, 如获得与衬底粘附良好、厚度超过1μm的c-BN厚膜; 成功实现了c-BN单晶薄膜的异质外延生长; 此外, 在c-BN薄膜力学性质和过渡层微结构研究方面也取得了进展. 本文主要评述最近几年c-BN薄膜研究在以上几方面取得的最新进展.     

Intrinsic metallic and semiconducting cubic boron nitride nanofilms

We show by density functional theory calculations with both hybrid and semilocal functionals that cubic boron nitride (111) nanofilms are intrinsically metallic and even turn into semiconductors once the thickness is less than 0.69 nm, which is in sharp contrast to the known insulating nature of boron nitride materials. The exceptional metallic or semiconducting band gap is due to a combined effect of thickness-dependent inbuilt electric polarization and labile near-gap states unique in the polar nanofilms. The band gap and dipole moment of the nanofilms can be further significantly tuned by applying an in-plane strain. These distinguished features of the boron nitride nanofilms are robust to surface passivation and can be enhanced by hybridizing with diamond films, thereby opening an exciting prospect of using the versatile cubic nanofilms in future electronic and piezoelectric devices.