终端声子激光晶体光谱及其理论解释

近年来,寻找掺过渡金属离子的晶体做为终端声子可调谐激光器已引起人们很大的重视,已有不少文献报道了终端声子激光晶体的激光光谱特性。但是,关于终端声子激光晶体的光谱理论解释大多是根据晶体场理论,而很少从晶格弛豫和多声子跃迁理论方面来讨论。本文测量了BeAl_2O_4:Cr~(3 )晶体和BeAl_2O_4:Ni~(2 )晶体在5K、77K、300K温度下的吸收光谱和荧光光谱,从晶体场理论和晶格弛豫、多声子跃迁理论两个方面综合考虑,研究了     

BeAl_2O_4:Cr~(3+)晶体激光性能的改进

报道了改进BeAl_2O_4:Cr~(3+)晶体激光性能的几项措施。得到的晶体的激光振荡阈值大大降低,而激光器输出能量及调谐范围提高。     

BeAl_2O_4:Cr~(3 )单晶的熔盐法生长及其光谱特性的研究

采用熔盐法从PbF_2—PbO—B_2O_3三元系高温溶液中生长出掺Cr~(3 )的BeAl_2O_4单晶,通过严格控制降温速率(约2℃/小时)和熔剂成份的摩尔比值(45P_bF_2:45P_bO:10B_2O_3)获得了尺寸达10×4.5×4.5mm~3的块状透明晶体。 在5K.77K和300K不同温度下测量了Cr~(3 ):BeAl_2O_4单晶的非偏振吸水谱、荧光谱和激发谱(T=300K),首次由实验确定出在C_(1h)低对称场微扰下Cr~(3 )离子的~2T_1和~2T_2能级分裂出的三个亚能级的位置。     

BeAl_2O_4:Cr~(3 )晶体的激光性能实验

获得了BeAl_2O_4:Cr~(3 )晶体的电子—振动激光输出。自由振荡阈值170焦耳,输出激光能量140毫焦耳,激光中心波长为7526埃。激光具有与结晶学b轴相平行的线偏振特性。用石英双折射滤光片作调谐元件,看到了激光的调谐输出。     

Cr~(3 )在Y_3Ga_5O_(12)晶体中的能级和光谱特性

过渡金属离子掺杂的各种氧化物晶体的光谱特性是激光晶体物理的基本问题,研究该问题的目的在于开辟探寻新型激光晶体实验和理论途径。近年来,Walling和Strure等人将具有3d外层电子结构的Cr~(3 )离子掺入BeAl_2O_4和Gd_3(Ga,Sc)_2Ga_3O_(12)晶体中研制成功室温宽带终端声子可调谐激光晶体,但由于氧化铍的剧毒性和钪的稀有昂贵,使它们的开发应用受到很大的局限。     

BeAl_2O_4:Ni~(2 )晶体光谱性能的研究

本文首次报道了BeAl_2O_4:Ni~(2 )晶体的吸收光谱和荧光光谱,在近红外获得了半宽度大于2000的荧光峰,室温荧光寿命为190μs。根据晶体场理论研究了光谱特性,初步确定出Ni~(2 )在BeAl_2O_4晶体中的能级结构,讨论了BeAl_2O_4:Ni~(2 )晶体成为终端声子可调谐激光晶体的可能性。     

可调连续的金绿宝石激光器

已由固体金绿宝石(BeAl_2O_4:Cr~(3+))得到波长可调连续的激光作用。用3千瓦汞弧灯激励,由744毫微米到788毫微米之间出现激光发射,在765毫微米观测到最大功率6.5瓦。     

会议报导

由中国光学学会和中国硅酸盐学会共同组织的第二届全国激光新晶体材料学术会议于1983年11月25～29日在泉州市华侨大学新落成的陈嘉庚纪念堂举行。通过46篇学术论文的交流和讨论,反映出我国近三年来激光与非线性光学新晶体研究工作蓬勃发展。激光晶体的研究重点是:1.终端声子跃迁的可调谐激光晶体。主要品种有Cr~(3 ):BeA1_2O_4和Ni~(2 ):MgF_2。还通过晶格动力学结构与晶格场理论相结合的规律发展新的基质晶体;2.稀土自激活小型激光晶体。积极开发跃迁通道丰富的Ho~(3 )、Er~(3 )离子晶体。对Tb_xD_(y(1-x))P_5O_(14),Er_x(Gd、Y)_(1-x)Al_3(BO_3)_4、LiNd_(0.5)La(0.2)P_4O_(12)以及同成分熔化的K_5Bi_(0.9)Er_(0.1)(MO_4)等进行了生长和性能研究;3.利用较成熟的基质晶体开拓新的功能效应和新波长。在YAG晶体中多掺杂,实现了自     

Ni~(2+):BeAl_2O_4激光晶体的红外荧光光谱及能级热移位特性的研究

文献[1]报道了Ni~(2+):BeAl_2O_4晶体的晶场能级与Ni~(2+)离子在晶体中择位与电荷补偿机理的研究结果,指出该晶体的红外荧光来源于处于具有C_2对称畸变的八面体格值上的Ni~(2+)离子~3T_(2g)→~3A_(2g)跃迁发光.但未能考虑谱宽、能级位置与低对称劈裂对于发光的影响.为了研究用Ni~(2+):BeAl_2O_4晶体制成激光器的工作稳定性与调谐功能等工作特性的需要,进一步研究温度对于该晶体发光特性的影响是十分必要的,     

国际激光器件研制动态——赴美访问印象记

今年二、三月间,我们去美国参加1980年激光和电光系统工程会议(会议期间同时展出了一百五十家厂商的产品),顺便参观了有关大学、激光公司、卫星测量站,对若干激光器的研制和发展的国际动态有了较深的印象。一、可调谐激光器研制非常活跃(1)联合化学公司(Allied Chemica-ls)展出一种新的固体激光晶体金绿宝石(Alexandrite,Cr~(3+):BeAl_2O_4)。用脉冲氙     

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistors

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As n-p-n abrupt double-heterojunction bipolar transistors grown by molecular beam epitaxy (MBE) have been realized for the first time. DC current gains in excess of 300 have been measured on devices operated in the emitter-up configuration. DC current gains around 50 are obtained on device structures with Be+ implanted extrinsic base regions operated in the emitter-down configuration. The carrier injection and collection behavior of the abrupt InGaAs/InAlAs heterojunctions is discussed.     

Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Characteristics of BaZrO₃ (BZO) modified Sr_0.8Bi_2.2Ta₂O₉ (SBT) thin films fabricated by sol-gel method on HfO₂ coated Si substrates have been investigated in a metal-ferroelectric-insulator-semiconductor (MFIS) structure for potential use in a ferroelectric field effect transistor (FeFET) type memory. MFIS structures consisting of pure SBT and doped with 5 and 7 mol% BZO exhibited memory windows of 0.81, 0.82 and 0.95 V with gate voltage sweeps between −5 and +5 V, respectively. Leakage current density levels of 10⁻⁸ A/cm² for BZO doped SBT gate materials were observed and attributed to the metallic Bi on the surface as well as intrinsic defects and a porous film microstructure. The higher than expected leakage current is attributed to electron trapping/de-trapping, which reduces the data retention time and memory window. Further process improvements are expected to enhance the electronic properties of doped SBT for FeFET.     

Beat-frequency between measurements between C12O216and C12O218lasers

Several beat frequencies in the range below 6 GHz have been measured using a C¹²O2¹⁶laser and a C¹²O2¹⁸laser operating on several pairs of closely spaced lines in the 9.3-μm region.     

Laser4F3/2→4I9/2and4F3/2→4I13/2transitions in KY(WO4)2:Nd3+

We report the observation of lasing at 0.9137 μm and 1.3545 μm in neodymium-doped KY(WO4)2at 77 K. Transition cross sections, fluorescent line width, and branching ratios are given.     

Some new FIR laser lines of optically pumped12CH316OH,12CH316OD, and12CH3I,12CH3Br,12CD2Cl2absorption spectroscopy of water and acetonitrile

The wavelength, polarization, and output power of several lines of the optically pumped CW FIR¹²CH3¹⁶OH (methanol) and¹²CH3¹⁶OD (1-D deuterated methanol), methyl iodide, methyl bromide, and deuterated methylene chloride lasers have been determined. In addition to lines already reported in the literature, seven strong lines have been observed. Optimum performance of the laser system is achieved by means of an improved coupling of the CO2pump power into the resonator and extraction of the FIR power from the resonator. Measurements on the power absorption coefficient of water using the laser indicate thatalpha(bar{nu})rises to almost 1100 Np ċ cm^-1at 170 cm^-1, and then shows a gradual fall with an increase in frequency. A strong temperature dependence of the 200 cm^-1peak inalpha(bar{nu})is predicted, with a decrease in the frequency of maximum power absorption coefficient with an increase in temperature. The range of measurements for acetonitrile is extended to lower frequencies so as to overlap with those determined from other millimeter wave techniques. For highly power-absorbing liquids,alpha(bar{nu})is estimated to be within ± 5 percent.     

Al0.25In0.75P/Al0.48In0.52As/Ga0.35In 0.65As graded channelpseudomorphic HEMT's with high channel-breakdown voltage

A new Al_0.25In_0.75P/Al_0.48In_0.52 As/Ga_0.35In 0_.65As pseudomorphic HEMT where the InAs mole fraction of the Ga_1-xIn_xAs channel was graded (x=0.53→0.65→0.53) is described. The modification of the quantum well channel significantly improved breakdown characteristics. In addition, use of an Al_0.25In_0.75P Schottky layer increased the Schottky barrier height. Devices having 0.5 μm gate-length showed g_m of 520 mS/mm and I_max of 700 mA/mm. The gate-drain (BV_g-d) and source-drain (BV_d-s ) breakdown voltages were as high as -14 and 13 V, respectively. An f_T of 70 GHz and f_max of 90 GHz were obtained     

选频~(14)CO_2-~(12)CO_2同位素激光器

我们研制了一台~(14)CO_2-~(12)CO_2同位素激光器,测量到激光谱线80条,其中40条是~(14)CO_200°1-(10°0,02°0)_I带的激光跃迁谱线,强线输出功率达4.0W以上;实验还观察到同位素的竞争效应,发现即使~(14)CO_2成份低于~(12)CO_2,其激光辐射仍占优势.     

Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

A high-speed waveguide In_0.53Ga_0.47As-In_0.52Al_0.48 As separate absorption, charge, and multiplication avalanche photodiode suitable for operation at 1.55 μm has been demonstrated, a unity-gain bandwidth of 27 GHz was achieved with a gain-bandwidth product of 120 GHz     

Temporal stability of circulating current in thin film Tl2Ba2CaCu2O8 and YBa2Cu3O7

The temporal stability of trapped transport current in annular thin film Tl₂Ba₂CaCu₂O₈ (TBCCO) and YBa₂Cu₃O₇ (YBCO) wafers has been accurately measured and has been found to be of suitable quality for the stringent requirements of nuclear magnetic resonance (NMR) magnets. No detectable decay, to the limit of the experimental apparatus (2*10^-14 Ω), was detected in those wafers with transport current at or below the critical current density J_c. The critical current density, as previously determined from 12 μm meander lines, was confirmed in a wafer with a width of 1.9 cm. The profile of trapped magnetic field resulting from induced current was modeled in order to assess its effect on the uniformity of an NMR magnet     

An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a modulation-doped channel

A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This results in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In_0.52Al_0.48As/In_0.53 Ga_0.47As system on InP. A 1.5-μm-gate-length MISFET shows a unity current-gain cutoff frequency of 37 GHz