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1.
《Microwave Theory and Techniques》2009,57(3):542-551
2.
《Photonics Technology Letters, IEEE》2009,21(5):334-336
3.
Zimmermann L. Voigt K. Winzer G. Petermann K. Weinert C.M. 《Photonics Technology Letters, IEEE》2009,21(3):143-145
We demonstrate 4times4 multimode interference couplers in a silicon-on-insulator rib waveguide technology that enable compact integrated fully passive optical 90deg-hybrid devices with operation across the C-band. 相似文献
4.
A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B 3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness. 相似文献
5.
《Microwave Theory and Techniques》2008,56(9):2046-2053
6.
Sen Wang Kun-Hung Tsai Kuo-Ken Huang Si-Xian Li Hsien-Shun Wu Tzuang C.-K.C. 《Microwave Theory and Techniques》2009,57(1):61-70
In this paper, an X-band CMOS single chip integrating 16 building blocks is developed for frequency modulation continuous wave radar application. The quadrature and monopulse transceiver consists of a voltage-controlled oscillator, amplifiers, Wilkinson power dividers, 90deg hybrid low-noise amplifiers, rat-race hybrid, a single-pole double-throw switch, an active bandpass filter (BPF), and mixers. The transceiver is fabricated in a standard mixed-signal/RF bulk 0.18-mum CMOS technology with a chip area of 2.6 mm 3.3 mm, including contact pads. The transceiver is implemented by meandered complementary-conducting-strip transmission lines demonstrating their capability of miniaturizing circuits such as 90deg hybrid and rat-race hybrid with 95% and 98% size reduction compared to the prototype designs, respectively. The active BPF consumes 4.5 mW achieving 0-dB insertion loss at the passband. The total power consumption of the transceiver is 0.35 W. Output power of the transmitter is 1 dBm with a 35-dB second harmonic suppression. Moreover, the on-chip isolations between T/R in this compacted transceiver are more than 60 dB. The measured receiver gain and NF are -4.5 and 11.5 dB, respectively. Finally, the obtained in-phase and quadrature signals demonstrate 0.6-dB amplitude and 7deg phase imbalance. 相似文献
7.
《Solid-State Circuits, IEEE Journal of》2009,44(3):740-750
8.
《Solid-State Circuits, IEEE Journal of》2009,44(11):3019-3029
9.
Dukju Ahn Dong-Wook Kim Songcheol Hong 《Microwave and Wireless Components Letters, IEEE》2009,19(4):227-229
A high gain CMOS down conversion mixer with a gain enhancement technique is presented. This technique includes negative resistance generation, parasitic capacitance cancellation and current-injection. These are implemented with an additional circuitry. This mixer has a conversion gain of 9.12 dB, input 1 dB compression point of -11 dBm at 24 GHz, while consuming 16.2 mW from 1.8 V supply. Between 22 and 26 GHz, the LO-to-RF and RF-to-LO isolations are better than 35 dB and 26 dB, respectively. 相似文献
10.
《Solid-State Circuits, IEEE Journal of》2009,44(7):1990-2001
11.
Hui Zheng Shuzuo Lou Dongtian Lu Cheng Shen Tatfu Chan Luong H.C. 《Solid-State Circuits, IEEE Journal of》2009,44(2):414-426
This paper presents the design and integration of a fully-integrated dual-conversion zero-IF2 CMOS transceiver for 9-band MB-OFDM UWB systems from 3.1 GHz to 8.0 GHz. The transceiver integrates all building blocks including a variable-gain wideband LNA, a single combined mixer for both RF down-conversion in RX and up-conversion in TX, a fast-settling frequency synthesizer, and IQ ADCs and DACs. Fabricated in a standard 0.18- mum CMOS process, the receiver measures maximum S11 of - 13 dB, maximum NF of 8.25 dB, in-band IIP3 of better than -13.7 dBm, and variable gain from 25.3 to 84.0 dB. IQ path gain and phase mismatches of the receiver chain are measured to be 0.8 dB and 4 deg, respectively. The transmitter achieves a minimum output P-1 dB of -8.2 dBm, sideband rejection of better than -42.2 dBc, and LO leakage of smaller than - 46.5 dBc. 相似文献
12.
《Electron Device Letters, IEEE》2009,30(6):596-598
13.
This paper demonstrates a 16-element phased-array transmitter in a standard 0.18-mum SiGe BiCMOS technology for Q-band satellite applications. The transmitter array is based on the all-RF architecture with 4-bit RF phase shifters and a corporate-feed network. A 1:2 active divider and two 1:8 passive tee-junction dividers constitute the corporate-feed network, and three-dimensional shielded transmission-lines are used for the passive divider to minimize area. All signals are processed differentially inside the chip except for the input and output interfaces. The phased-array transmitter results in a 12.5 dB of average power gain per channel at 42.5 GHz with a 3-dB gain bandwidth of 39.9-45.6 GHz. The RMS gain variation is < 1.3 dB and the RMS phase variation is < for all 4-bit phase states at 35-50 GHz. The measured input and output return losses are < -10 dB at 36.6-50 GHz, and <-10 dB at 37.6-50 GHz, respectively. The measured peak-to-peak group delay variation is plusmn 20 ps at 40-45 GHz. The output P-1dB is -5plusmn1.5 dBm and the maximum saturated output power is - 2.5plusmn1.5 dBm per channel at 42.5 GHz. The transmitter shows <1.8 dB of RMS gain mismatch and < 7deg of RMS phase mismatch between the 16 different channels over all phase states. A - 30 dB worst-case port-to-port coupling is measured between adjacent channels at 30-50 GHz, and the measured RMS gain and phase disturbances due to the inter-channel coupling are < 0.15 dB and < 1deg, respectively, at 35-50 GHz. All measurements are obtained without any on-chip calibration. The chip consumes 720 mA from a 5 V supply voltage and the chip size is 2.6times3.2 mm2. 相似文献
14.
Amelifard B. Fallah F. Pedram M. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2008,16(7):851-860
Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicrometer regime. As a result, reducing the subthreshold and tunneling gate leakage currents has become one of the most important criteria in the design of VLSI circuits. This paper presents a method based on dual- V t and dual- T ox assignment to reduce the total leakage power dissipation of static random access memories (SRAMs) while maintaining their performance. The proposed method is based on the observation that read and write delays of a memory cell in an SRAM block depend on the physical distance of the cell from the sense amplifier and the decoder. Thus, the idea is to deploy different configurations of six-transistor SRAM cells corresponding to different threshold voltage and oxide thickness assignments for the transistors. Unlike other techniques for low-leakage SRAM design, the proposed technique incurs neither area nor delay overhead. In addition, it results in a minor change in the SRAM design flow. The leakage saving achieved by using this technique is a function of the values of the high threshold voltage and the oxide thickness, as well as the number of rows and columns in the cell array. Simulation results with a 65-nm process demonstrate that this technique can reduce the total leakage power dissipation of a 64 times 512 SRAM array by 33% and that of a 32 times 512 SRAM array by 40%. 相似文献
15.
Chao-Shiun Wang Juin-Wei Huang Kun-Da Chu Chorng-Kuang Wang 《IEEE transactions on circuits and systems. I, Regular papers》2009,56(10):2341-2352
This paper presents a fully integrated dual-antenna phased-array RF front-end receiver architecture for 60-GHz broadband wireless applications. It contains two differential receiver chains, each receiver path consists of an on-chip balun, agm-boosted current-reuse low-noise amplifier (LNA), a sub-harmonic dual-gate down-conversion mixer, an IF mixer, and a baseband gain stage. An active all-pass filter is employed to adjust the phase shift of each LO signal. Associated with the proposed dual conversion topology, the phase shift of the LO signal can be scaled to one-third. Differential circuitry is adopted to achieve good common-mode rejection. The gm-boosted current-reuse differential LNA mitigates the noise, gain, robustness, stability, and integration challenges. The sub-harmonic dual-gate down-conversion mixer prevents the third harmonic issue in LO as well. Realized in a 0.13-mum 1P8M RF CMOS technology, the chip occupies an active area of 1.1 times 1.2 mm2. The measured conversion gain and input P1 dB of the single receiver path are 30 dB and -27 dBm , respectively. The measured noise figure at 100 MHz baseband output is around 10 dB. The measured phased array in the receiver achieves a total gain of 34.5 dB and theoretically improves the receiver SNR by 4.5 dB. The proposed 60 GHz receiver dissipates 44 mW from a 1.2 V supply voltage. The whole two-channel receiver, including the vector modulator circuits for built-in testing, consumes 93 mW from a 1.2 V supply voltage. 相似文献
16.
Yung-Nien Jen Jeng-Han Tsai Chung-Te Peng Tian-Wei Huang 《Microwave and Wireless Components Letters, IEEE》2009,19(1):42-44
A 20-24 GHz, fully integrated power amplifier (PA) with on-chip input and output matching is realized in 0.18 mum standard CMOS process. By cascading two cascode stages, the PA achieves 15 dB small signal gain, 10.7% power added efficiency, 16.8 dBm output saturation power and high power density per chip area of 0.137 W/mm2, which is believed to be the highest power density to our knowledge. The whole chip area with pads is 0.35 mm2, which is the smallest one compared to all reported paper. 相似文献
17.
《Microwave and Wireless Components Letters, IEEE》2009,19(5):308-310
18.
Ya-Chun Lai Shi-Yu Huang Hsuan-Jung Hsu 《Solid-State Circuits, IEEE Journal of》2009,44(10):2817-2823
Lowering the supply voltage is an effective way to significantly reduce the power consumption of a static random access memory (SRAM). However, the minimum supply voltage (Vminf) required to support a given operating frequency in an SRAM macro is often elusive from one chip to another due to process variations. Moreover, temperature could vary when an SRAM macro is in operation, and thus exacerbating the problem since temperature variation could affect the Vminf . In this paper, we propose an on-chip self-VDD-tuning scheme that automatically adjusts each manufactured SRAM macro to a minimal voltage near its Vminf. Our scheme can provide a user-specified speed margin (e.g., 10% of the target frequency), and thereby creating a guard band for assuring robust operations over a wide range of temperatures. Simulation results show that, with the proposed speed margining technique, a 64 Kb SRAM macro can tolerate temperature up to 125degC. Measurement results from a test chip in a 0.18-mum CMOS process also demonstrate that we can achieve 40% power savings for an 8 Kb SRAM macro operating at 150 MHz by means of this resilient self-VDD-tuning. 相似文献
19.
《Microwave and Wireless Components Letters, IEEE》2009,19(8):521-523
20.
Zegaoui M. Choueib N. Harari J. Decoster D. Magnin V. Wallart X. Chazelas J. 《Photonics Technology Letters, IEEE》2009,21(19):1357-1359
This letter demonstrates a 2times2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive integrated optical circuit with an optimized X-crossing. The passive structure was designed using a two-dimensional beam propagation method (BPM) and the entire InP-InGaAsP-InP DOS was designed using a semivectorial three-dimensional BPM. The fabricated 2times2 InP switching matrix heterostructure with lambdag=1.3 mum exhibits optical crosstalk as low as -30.5 dB for drive current of 52 mA at 1.55-mum wavelength. Maximum crosstalk change of 4 dB is measured under optical polarization variation. 相似文献