基于改进型匹配网络的宽带高效率E类功放的设计

为了解决E类功放工作带宽过窄的问题,对E类功放的输入、输出匹配网络提出了一种改进方案.该方案中输出匹配网络采用微带线结构与切比雪夫低通匹配网络相结合的方法,在较宽的工作带宽内有效地抑制了谐波;并采用阻抗变换方法设计了含闭式解的宽带带通输入匹配网络,明显增强了输入匹配网络设计的灵活性.利用该方案,同时采用多谐波双向牵引技术得到功率管的最佳源阻抗和负载阻抗,基于CGH40010F功率管设计了一款应用于L波段的宽带高效率E类功放.测试结果表明,在输入功率为28dBm,漏极偏置电压VDS=28V,栅极电压VGS=-3.3V时,在整个L波段频率范围内漏极工作效率大于65%,最高达到83%,输出功率为39~41.1dBm,增益为11~13.1dB,增益平坦度为±1dB.这一结果验证了该改进方案的有效性,使得E类功放具有宽带宽、高效率的性能.     

平衡式E/F类功率放大器的设计与实现

为了解决功率放大器设计过程中存在的效率低和输入/输出端回波损耗较大的问题,设计了一种工作频率为1.5 GHz的平衡式功率放大器。通过采用3 dB定向耦合器对射频信号进行分配及合成,大大降低了输入/输出端的驻波系数,并将逆F类功率放大器的谐波控制网络引入E类功率放大器的匹配电路中。使用ADS对晶体管进行负载牵引和源牵引,得到晶体管的输入/输出阻抗,同时结合晶体管的寄生参数,在输出匹配电路中对二次谐波、三次谐波分别进行开路和短路处理,且为了进一步提高功率放大器的工作性能,在输入电路结构中抑制了二次谐波。选用GaN HEMT器件CGH40010F晶体管,利用ADS软件进行电路仿真,并采用Rogers4350b高频板材制作该功率放大器的实际测试电路板。仿真优化和实测表明：在输入功率为28 dBm时,该功率放大器的输出功率为41.54 dBm,漏极效率为76.99%,功率附加效率（power additional efficiency,PAE）达到73.59%,输入/输出端驻波系数小于2,同时具有160 MHz的高效率带宽,且最大输出功率较单管功率放大器提高了3 dB。实测结果与仿真数据有一定的误差,但仍有较好的一致性,满足设计指标要求,验证了设计方法的可行性。该设计方法具有效率高和回波损耗低的优势,提高了功率放大器的设计效率,使它在当今高效绿色节能的射频微波通信系统中具有广阔的应用前景。     

Reduced transposed flicker noise in microwave oscillators using gaas-based feedforward amplifiers

Transposed flicker noise reduction and removal is demonstrated in 7.6 GHz microwave oscillators for offsets greater than 10 kHz. This is achieved by using a GaAs-based feedforward power amplifier as the oscillation-sustaining stage and incorporating a limiter and resonator elsewhere in the loop. 20 dB noise suppression is demonstrated at 12.5 kHz offset when the error correcting amplifier is switched on. Three oscillator pairs have been built. A transmission line feedback oscillator with a Qo of 180 and two sapphire-based, dielectric resonator oscillators (DROs) with a Qo of 44,500. The difference between the two DROs is a change in the limiter threshold power level of 10 dB. The phase noise rolls-off at (1/f)(2) for offsets greater than 10 kHz for the transmission line oscillator and is set by the thermal noise to within 0-1 dB of the theoretical minimum. The noise performance of the DROs is within 6-12 dB of the theory. Possible reasons for this discrepancy are presented.     

Hybrid quadrature polar modulator-based transmitter with digital predistorter for simultaneous enhancement of adjacent channel power ratios and power added efficiency (PAE)

The design and linearisation techniques for a highly efficient but nonlinear Class-E power amplifier (PA) applied to linear RF transmitters are presented. A hybrid quadrature polar modulator (HQPM) is proposed to linearise the Class-E PA. To accomplish this HQPM-based transmitter, the Class-E PA is designed with a consideration of finite DC-feed inductance for a wide supply voltage modulation bandwidth. In addition, a digital predistorter is embedded in the HQPM to provide the predistorted envelope modulation for both RF-input and supply voltage signals fed to the Class-E PA. A cdma2000 1x transmitter incorporating such a Class-E PA and a HQPM have been implemented to serve as an evidence for the simultaneous achievement of high linearity and high efficiency.     

Low temperature operation of UHF power static induction transistors

This paper describes the results of recent experiments with high power surface gate static induction transistors (SITs) operated at and near liquid nitrogen temperatures. The temperature dependence of important large signal and small signal device parameters over a wide range of operating temperatures is described. UHF power performance of liquid nitrogen cooled SIT power amplifiers is described as well. At 425 MHz, a single transistor power amplifier has been fabricated which exhibits output power levels > 350 W with 8 dB gain and nearly 80% drain efficiency. Smaller test devices have been used in an 850 MHz amplifier, which exhibits 30 W c.w. with 7.8 dB gain and 64% drain efficiency.     

Analysis of a class E power amplifier with series-parallel resonator

The authors propose new class E power amplifier configuration with an equivalent series-parallel resonator network. The boundary conditions for the 100% efficiency operations are analysed under the conditions that the duty ratio is 0.5 and the loaded quality factor is infinite. If the DC supply voltage and the output power are assumed the same, the load resistance R is 53.65% higher, the excess series inductance L/sub x/is 3.99% lower and the maximum frequency f/sub max/is improved by 6.47% compared with the conventional class E amplifier. The theoretical analysis is verified by numerical results and harmonic balance simulations. And a lumped element test board is built and measured at 200 MHz utilising a Lateral Double Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF21010 as the switching device. An output power of 33.03 dBm, a drain efficiency of 85.6% and a gain of 16 dB are measured. The approximate transmission-line topology with harmonics suppression is also proposed.     

Analysis and design of high-efficiency variable conduction angle doherty amplifier

The Doherty amplifier was first proposed to improve the efficiency under output power back-off using the technique of load-line modulation of a `carrier? amplifier through a `peak? amplifier. By varying input bias of the peak amplifier along with load of the carrier amplifier at low drive levels, different topologies of the Doherty amplifier are distinguished. An analytical analysis that determines the optimum output performance of these topologies in terms of output power, efficiency and output power back-off ensuring a near-peak efficiency is developed. The presented comprehensive analysis considered for variation of conduction angle of the peak amplifier biased class C. New design equations of the analysed topologies are derived. A realisation at a central frequency of 1.9 GHz using GaAs field effect transistor (FET) devices of a Doherty amplifier topology is reported. In this topology the carrier operates (at low drive levels) into load impedance 5/2 times larger than its optimum. Power-added efficiency of 61.8% is measured at P/sub 1dB/ of 25.9 dB m and 33.2% is measured at 9 dB back-off from P/sub 1dB/.     

Power combining techniques into unbalanced loads for Class-E and inverse Class-E amplifiers

A power combining strategy for Class-E and inverse Class-E amplifiers operating at high frequencies such that they can operate into unbalanced loads is proposed. This power combining method is particularly important for the inverse Class-E amplifier configuration whose single-stage topology is naturally limited for small-to-medium power applications. Design examples for the power combining synthesis of classical Class-E and then inverse Class-E amplifiers with specification 3 V-1.5 W-2.5 GHz are given. For this specification, it is shown that a three-branch combiner has a natural 50 γ output impedance. The resulting circuits are simulated within Agilent Advanced Design Systems environment with good agreement to theoretical prediction. Further the performance of the proposed circuits when operated in a Linear amplification using Nonlinear Components transmitter configuration whereby two-branch amplifiers are driven with constant amplitude conjugate input phase signals is investigated.     

1.5-GHz voltage controlled oscillator with 3% tuning bandwidth using a two-pole DSBAR filter

First results on a novel voltage controlled oscillator (VCO) in the lower gigahertz range, featuring excellent phase noise and high power efficiency are presented. The heart of the VCO is a recently reported novel miniature two-pole decoupled stacked bulk acoustic resonator (DSBAR) filter. With its single 180° phase transition over the 1 dB bandwidth, linear phase, and maximum 1 dB insertion loss, it provides stable single-mode operation over 45 MHz (≈3%) of tuning bandwidth and has negligible heat dissipation when operated at incident power levels of 100 mW or greater. The 1.55-GHz laboratory VCO prototypes operate at 5 V supply voltage, 50 mA supply current, 15 dBm of output power, and >13% efficiency, demonstrating -84 and < -180 dBc/Hz phase noise suppression at 1 kHz carrier offset and in the thermal noise region, respectively. VCOs with cascaded DSBAR filters for further phase noise reduction are also demonstrated.     

A high-current very wide-band transconductance amplifier

A novel design approach for a high-current, very-wide-band transconductance amplifier is described. The approach is based on paralleling the input and output of complementary unipolar current-mirror cells. Each cell has a fixed current gain determined by the ratio of two resistors. A differential input voltage-to-current circuit drives the cell array. The design avoids the need for a single low-resistance current-sensing resistor and the attendant problems inherent in such resistors. Although the concept is still under development, a prototype of the cell-based transconductance amplifier was implemented with ten positive and ten negative current cells to gain some experimental familiarity with the approach in addition to providing verification of computer simulation results. The prototype transconductance amplifier is DC coupled, has a 3-dB bandwidth of about 750 kHz, and can deliver up to 35 A RMS (root mean square) at 100 kHz with an output compliance voltage of 5 V RMS. Other important characteristics such as output-load regulation and DC offsets are discussed     

Extremely low thermal noise floor, high power oscillators usingsurface transverse wave devices

This paper presents state-of-the-art results on 1-GHz surface transverse wave (STW) oscillators running at extremely high loop power levels. The high-Q single-mode STW resonators used in these designs have an insertion loss of 3.6 dB, an unloaded Q of 8000, a residual PM noise of -142 dBc/Hz at a 1-Hz carrier offset, and operate at an incident power of up to +31 dBm in the loop. Other low-Q STW resonators and coupled resonator filters (CRF), with insertion losses in the 5-9 dB range, can conveniently handle power levels in excess of two Watts. These devices were incorporated into voltage controlled oscillators (VCO's) running from a 9.6-V dc source and provide an RF output power of +23 dBm at an RF/dc efficiency of 28%. Their tuning range was 750 kHz and the PM noise floor was -180 dBc/Hz. The oscillators, stabilized with the high-Q devices and using specially designed AB-class power amplifiers, delivered an output power of +29 dBm and exhibited a PM noise floor of -184 dBc/Hz and a 1-Hz phase noise level of -17 dBc/Hz. The 1-Hz phase noise level was improved to -33 dBc/Hz using a commercially available loop amplifier. In this case, the output power was +22 dBm. In all cases studied, the loop amplifier was found to be the factor limiting the close-to-carrier oscillator phase noise performance     

Active quasi-circulator realisation with gain elements and slow-wave couplers

A microstrip active quasi-circulator is presented using two generic amplifier blocks and two power couplers. The power couplers are parallel-coupled lines with a slow-wave structure in order to improve the isolation between ports of the quasi-circulator. A detailed analytic design procedure is presented for the slow-wave couplers based on the capacitive coupling modelling approach for coupled transmission lines. Experimental results show that the quasi-circulator has an insertion loss between 1 and -2 dB, a return loss better than 11 dB at each of the ports and an isolation better than 20 dB from 1.0 to 3.0 GHz. The input 1 dB compression point is 14 dB m at 2.4 GHz.     

Tm3+-doped fiber master oscillator power amplifier with broad tunability in pulse duration using an acousto-optic external modulator

ABSTRACT

We demonstrate a pulse-duration tunable Tm³⁺-doped pulsed all-fiber master oscillator power amplifier (MOPA) operating at a central wavelength of 1908 nm. By using acousto-optic(AO) external modulation, the amplified laser pulse shows a tuning range having pulse durations from 66.5 ns to 8.0 μs and a repetition rate of 100 kHz-2 MHz. The laser achieved a maximum average power of 28.1 W and a corresponding energy of 28.1 μJ at 1MHz with a 3 dB linewidth of 0.63 nm and a beam quality factor of M_x²=1.25 and M_y²=1.32. The ASE suppression ratio is 50 dB and the corresponding total amplifier gain is 27.5 dB. To the best of our knowledge, it is the highest average output power and slope efficiency (～51.0%) achieved using AO external modulation in a Tm³⁺-doped pulsed fiber amplifier.     

噪声温度计用放大器设计与性能评估

低噪声、低失真、高共模抑制比的放大器对于噪声法测量热力学温度至关重要。设计了由前置放大、仪表放大和缓冲放大3级组成的噪声温度计用高性能放大器。其中,采用具有超低噪声的结型场效应对管IF9030作为前置差分放大级的输入;研制了自动化测量对管转移特性的装置,用于在大批量对管中挑选匹配度更优的器件;采用互相关技术压低电路中不相关的噪声,从而确保能够准确测量到被放大器背景噪声淹没的非线性失真信号;重点评估了放大器在1MHz带宽内的共模抑制比和放大器受双频激励时的非线性失真。测量结果表明,放大器的背景噪声为1.2nV/Hz1/2;100kHz带宽内的共模抑制比优于90dB,100kHz至1MHz带宽内的共模抑制比会随着频率的增加而降低,但不低于70dB;放大器受频率为400kHz、401kHz,幅度有效值为8μV的双频信号激励时,产生的二阶交调失真信号比双频信号低79dB,二阶谐波失真信号比双频信号低85dB。     

Dynamic linearisation overcoming sweet spot of Doherty amplifier for WiBRO handset

A dynamic predistorter is applied to a Doherty amplifier to obtain high linearity and efficiency for operation with multi-frequency-allocation WiBRO services. The non-linear path uses a reflection-type dynamic predistorter comprising common collector InGaP/GaAs HBTs operated at saturation. A 40-dB range of intermodulation signal is obtained, which overcomes the peaking amplifier inter-modulation transfer characteristic. At the same time, the Doherty amplifier having an unbalanced signal is based on the low-loss transistor cellcombining techniques, and it is used to make a carrier amplifier operated towards P1 dB within the range satisfying linearity for WiBRO in consideration of efficiency. The spurious emission characteristics are compatible with WiBRO standards up to an output power of 22 dB m for multi-frequency allocation. The efficiency is 21% at 22 dB m.     

一种全桥式高功率放大器

用集成功率放大器驱动大功率三极管构成推挽功率放大器,两路推挽功率放大单元可以组合构成全桥式功率放大器,这种放大器大量使用大功率三极管等分立元件,能够提高电路总的额定功率,并且使元件布局分散有利于实现散热设计,工程样机研制证明该方法适用。水库测试结果表明:驱动某大型双谐振压电陶瓷换能器,功放样机输出连续信号时,在5 k Hz左右输出电功率达到1600 W以上。单频信号工作时观察信号波形,信号畸变与失真较小。根据试验与测试结果分析了末级三极管上的功率耗散情况,验证了工程样机在散热设计方面的有效性。     

Highly efficient <Emphasis Type="Italic">X</Emphasis>-range AlGaN/GaN power amplifier

The development of microwave power amplifiers (PAs) based on transistors with an AlGaN/GaN heterojunction are discussed in terms of the possible enhancement of their efficiency. The main focus is on the synthesis of the transforming circuits, which ensure the reactive load at the second- and third-harmonic frequencies and complex impedance at the fundamental frequency. This makes it possible to optimize the complex operation mode of a PA; i.e., to reduce the scattering power and enhance the efficiency. A microwave PA based on the Schottky-barrier-gate field-effect transistor with 80 electrodes based on the GaN pHEMT transistor with a gate length of 0.25 nm and a gate width of 125 nm is experimentally investigated. The amplifier has a pulse output power of 35 W and a power-added efficiency of at least 50% at a working frequency of 9 GHz.     

新型两段光纤双向泵浦掺铒光纤放大器

运用工程化掺铒光纤放大器模拟理论方法，基于国产１４８０ｎｍＬＤ泵源和国产Ｅｒ＾３＋／Ａｌ＾３＋共掺杂光纤，从理论和实验上分析比较了新型两段级联泵浦与普通单段双泵两种结构ＥＤＦＡ的增益、功率和限幅特性。两段级联ＥＤＦＡ比单段ＥＤＦＡ的增益、３ｄＢ饱和输出功率和动态范围分别提高了５ｄＢ、１ｄＢ和１２ｄＢ，泵浦光转换效率改善了２０％。     

Automated Signal Generator Level Characterization and Verification

Automatic test systems are described that are used to characterize and verify the output level performance of signal generators using internally stored correction data applied under microprocessor control. The characterization technique allows user verification of output level performance by direct measurement with a conventional power meter. Particular emphasis is given to a level verification system capable of measuring output power from +20 dBm to less than -140 dBm in a frequency range of 100 kHz to 2.5 GHz with an uncertainty of less than 1 dB. An analysis of error factors and actual performance data is presented.     

High-performance diode-pumped Nd:YLF amplifier

We report on the performance of a multipass diode-pumped amplifier design to provide a combination of high gain and efficiency with high stability. A simple rod-cavity design and the establishment of quasi-steady-state operation resulted in a saturated gain of over 6000 at an average output intensity during the pulse train of 7 kW/cm2. The amplifier showed an output stability of 0.2% rms in the short-term and 0.7% rms in the long-term and an output intensity insensitive to input power changes. Zernike analysis of the measurements of pump distortion showed an almost pure astigmatic phase error that can be compensated up to high average power levels.