Ag基底织构和表面状况对YBCO薄膜性能的影响

采用MOD方法在三种不同织构和表面状态的Ag基底上制备了YBCO薄膜,研究了Ag基底的织构和表面状态对YBCO超导薄膜的影响.在真空中退火的Ag基底上沉积的YBCO薄膜仅有c轴取向,且薄膜表面有很多平行条纹,薄膜的连接性不好,J_c不高;在氩气气氛中退火的Ag基底上沉积的YBCO薄膜,具有很强的c轴取向和良好的面内织构,J_c相对较高为1.2×10⁴A/cm²;冷轧Ag基底沉积的YBCO薄膜织构没有氩气退火的Ag基底上的强,但薄膜的表面平整,连接性好,临界电流密度最高为1.5×10⁴A/cm².     

前驱液中添加聚乙烯吡咯烷酮对YBa2Cu3O7-δ膜形貌和性能的影响

用三氟乙酸金属有机物沉积(TFA-MOD)方法在LaAlO3(100)基底上生长YBa2Cu3O7-δ(YBCO)超导薄膜,研究了向前驱液中添加聚乙烯吡咯烷酮(PVP)对YBCO薄膜微结构和超导性能的影响.涂膜在氧气环境中进行200～250℃热解,再经775℃氩气环境下结晶后获得YBCO超导薄膜.在相同热处理条件下,未添加PVP的前驱液制得的YBCO薄膜临界电流密度为4050A/cm2,添加PVP的前驱液制得的YBCO薄膜临界电流密度为5800A/cm2.后者表现出较少的孔洞,较强的c轴取向,较纯的双轴织构和较高的临界电流密度.因此,向前驱液中添加PVP的化学方法可以改进YBCO涂层导体的MOD制备过程.总压,氧分压和热处理温度等工艺条件将进一步优化,以提高临界电流密度.     

氧离子束辅助激光制备具有织构的YBCO薄膜

应用氧离子束辅助准分子脉冲激光沉积薄膜技术,先在NiCr合金(Hastelloy c-275)基底上在室温下淀积具有平面织构的钇稳锆(YSZ)缓冲层薄膜,再在YSZ/NiCr基底上在750℃下制备具有平面织构和高临界电流密度的YBa2Cu3O7-x(YBCO)薄膜.YSZ和YBCO薄膜都为c-轴取向和平面织构的,YSZ(202)和YBCO(103)的X射线扫描衍射峰的全宽半峰值分别为18°和11°.YBCO薄膜的临界温度和临界电流密度分别为90K(R=0)和7.9×105A/cm2(77K,零磁场).     

银基带及YBCO高温超导薄膜的织构研究

通过温轧及退火制备了强立方织构的Ag基带,并通过冷轧及退火制备了强的{110}双轴织构的Ag基带,为高温涂层超导提供了很好的基带材料.在所制备的强立方织构和强{110}〈112〉双轴织构的银带上,用准分子脉冲激光方法直接沉积了YBCO超导薄膜.{110}<211〉双轴织构的银带较立方织构的银带更利于YBCO薄膜的外延生长,在{110},211〉双轴织构的银带上沉积的YBCO薄膜,临界电流值达到2～6×105A/cm2(77K,0T).     

倾斜衬底沉积法在金属衬底上外延生长YBCO薄膜

YBa2Cu3O7-x(YBCO)镀膜导体在电力等能源领域有巨大应用前景.利用倾斜衬底沉积法在无织构的金属衬底上生长了MgO双轴织构的模板层,在这一模板层上实现了双轴织构的YBCO薄膜的外延生长.这些膜的双轴织构用X射线极图分析、φ-扫描作了测定,观测到了MgO[001]方向相对于衬底法线倾斜了31°.研究了不同缓冲层材料对YBCO外延生长的取向和双轴织构的影响,外延生长的高质量的YBCO薄膜的转变温度和临界电流密度分别达到了91K和5.5×105A/cm2的较高的值.     

低氟MOD法制备Zr掺杂YBCO薄膜的研究

在金属有机盐沉积（MOD）法制备YBCO薄膜的工艺中, 采用无F的α甲基丙烯酸铜取代原来的三氟乙酸铜, 可以降低前驱溶液中大约50%的氟含量. 研究表明, 该方法大大缩短了YBCO前驱薄膜受热分解的时间, 仅为原来的1/7. 通过XRD、SEM分析发现, 该方法可以制备成分单一、具有良好立方织构的YBCO薄膜, 且薄膜表面平整致密, 没有裂纹, 临界温度(T_c)达到了90K左右, 77K、自场下的临街电流密度(J_c)达到了2.84MA/cm². 通过在制备的YBCO薄膜中引入6mol% 的 Zr元素掺杂, 有效地提高了YBCO薄膜在外加磁场下的超导性能.     

脉冲激光法制备涂层导体YBCO超导层的研究

报道了用脉冲激光沉积技术(PLD)在CeO2/YSZ/Y2O3/NiW衬底上连续制备YBCO超导层的研究结果。分析了衬底温度、薄膜厚度和退火时间分别对YBCO的织构、表面形貌及c轴晶格常数的影响。实验发现温度较低将导致a轴晶粒的生长,薄膜太厚将引起表面形貌变差,而YBCO薄膜c轴晶格常数随退火时间的增长而减小。最终得到了高质量的YBCO涂层导体,超导转变宽度(ΔTc)为1.6K,临界电流密度(Jc)达1.3MA/cm2(77K,SF)。     

YBCO覆膜导体低成本制备研究

报道新近发展的离子束结构改性(ISM)技术以及同步织构(STEX)技术在YBCO覆膜导体制备中的最新进展。采用TFA-MOD工艺成功的在LaAlO_3(100)衬底上制备出了临界电流密度高达6.5 MA/cm~2 (77K,0T)的YBCO超导薄膜,其超导转变温度接近91K;同时还在LaAlO_3(100)衬底上成功地采用溶胶-凝胶工艺制备出了具有高度外延双轴织构取向的SrTiO_3缓冲层材料;在YSZ(100)衬底上采用溶胶-凝胶工艺制备出了具有高度双轴织构取向的CeO_2缓冲层材料。随后在这两种衬底上采用TFA-MOD工艺沉积的YBCO超导薄膜也获得了超过1MA/cm~2(77K,0T)的临界电流密度。作为制备实用化YBCO超导带材的新路线,在数厘米长的IBAD-YSZ/Hastelloy金属基带模板上,采用低成本化学溶液方法依次制备出了高质量的CeO_2缓冲层和YBCO超导薄膜,获得了高达1.2MA/cm~2(77K,0T)的临界电流密度。为长超导带材的制备打下了很好的基础。提出了在金属基带上制备YBCO覆膜导体的新方法一同步织构(STEX)法。用该方法可以有效解决RABiTS方法中的金属基带热处理变软...     

Nb5+掺杂对低氟MOD法制备的YBCO薄膜性能的影响

本研究通过低氟MOD法成功地制备了Nb⁵⁺掺杂的YBa₂Cu₃O_7-x(YBCO)薄膜, Nb⁵⁺在薄膜中生成了大小在20~30 nm之间的纳米颗粒; 纳米颗粒的生成不会对 YBCO薄膜的织构和临界温度(T_c)构成明显的影响。由于纳米颗粒的引入, 掺杂后薄膜的临界电流密度(J_c)在整个磁场范围内都要高于纯的YBCO, 自场下的Jc更是达到了3.4 MA/cm²。掺杂薄膜的钉扎力(F_p)也远远大于纯YBCO, 最大钉扎力达到了3.25 GN/m³, 有效地提高了YBCO在外加磁下的超导性能。     

金属有机沉积法制备YBCO薄膜的研究进展

钇钡铜氧(YBCO)涂层导体因具有高临界转变温度(Tc)、高临界电流密度(Jc)和高不可逆场(Hirr)而成为最有应用前途的超导材料.但是,高昂的生产成本限制了YBCO带材的大规模应用.YBCO带材是在薄金属基带上通过外延生长的方法获得并具有良好结晶度和机械强度的超导涂层,而不是采用粉末套管法.金属有机沉积技术(MOD)是一种有效的超导层制备方法,与其他方法相比,它具有不需真空设备、可精确调节薄膜组分以及可实现批量生产等优点.因此,MOD在YBCO带材的生产中具有广阔的应用前景.传统MOD是以金属三氟乙酸盐(TFA)为原料,在热解过程中,TFA前驱体薄膜的热分解导致薄膜厚度急剧减小,薄膜内应力增加.为了避免薄膜龟裂,原始的热解时间需要10～20 h,漫长的热解时间不符合带材的低成本制备要求.因此,研究人员不断改进MOD工艺,在确保YBCO薄膜超导性能的同时大幅缩短了热处理时间.随着研究人员对MOD工艺的不断改善,MOD工艺经历了从传统三氟乙酸盐?金属有机沉积法(TFA?MOD)到低氟三氟乙酸盐?金属有机沉积法(LF?MOD),再到无氟?金属有机沉积法(FF?MOD)的发展变化.目前,通过调节FF?MOD结晶过程的温度和氧分压,YBCO薄膜的外延生长速率已经达到100 nm/s.此外,近年来通过缩小第二相纳米颗粒尺寸来提高YBCO薄膜磁通钉扎性能的研究取得了长足进展.研究人员通过两步加热工艺和制备纳米颗粒的胶体溶液,成功将第二相纳米颗粒的尺寸减小到10～15 nm,Jc(77 K,1 T)从0.1 MA/cm2增大到0.45 MA/cm2.本文按照金属有机沉积法制备YBCO薄膜的发展路径综述了TFA?MOD、LF?MOD和FF?MOD的研究进展,并在此基础上对近年来化学溶液法制备长带和提高YBCO薄膜磁通钉扎性能的主要研究进行了综述和展望.     

Texture Evolutions in Fe-6.5% Si Produced by Rapid Solidification and Chemical Vapor Deposition

Fe-Si ribbons and thin sheets with 6.5%Si content were prepared by means of the single roller rapid solidification and chemical vapor deposition (CVD), respectively. The initial textures of rapidly solidified Fe-6.5%Si ribbons were characteristic of the {100} fiber-type, which became weakened during primary recrystallization in various atmospheres. At the stage of secondary recrystallization, the {100} texture formed in Ar and the {110} texture in hydrogen, while there occurred a texture transformation from the {100} type to the {110} type in vacuum with the increase of annealing temperature. For Fe-6.5%Si sheets prepared by Si deposition in cold-rolled Fe-3%Si matrix sheets, their textures were dominated by the η-fiber (<001>//RD) with the maximum density at the {120}<001> orientations. After homogenization annealing, the η-fiber could evolve into the {130}<001> type or become more concentrated on the {120}<001> orientations, depending on the cold rolling modes of Fe-3%Si matrix sheets.     

用于涂层导体的Ag/立方织构Cu复合基带的制备

通过二次冷轧铜棒并850℃恒温热处理,制备出具有较强立方织构的Cu基带。以硝酸银、亚硫酸钠和硫代硫酸钠为主要原料配制镀银液,在立方织构Cu基带上制备出具有较强Ag(200)择优取向的银镀层。在600℃恒温热处理30min后Ag膜仍具有(200)择优取向,而830℃热处理后,Ag会扩散到Cu基底中,重复镀银、热处理5次后,Ag膜具有(200)的择优取向并少量面内织构,所得Ag/立方织构Cu复合带材可作为第二代高温超导带材YBCO涂层导体的金属基底。     

Texture of CoSi2 films on Si(111), (110) and (001) substrates

Synchrotron radiation was used to study the texture of polycrystalline CoSi₂ films that were formed by a solid-state reaction between a 30 nm Co film and Si(111), (110) and (001) substrates. All films were strongly textured, and several texture components were identified. We discuss the simultaneous occurrence of axiotaxy (i.e. alignment of lattice planes across the interface) and several different types of epitaxy in each of the films. Comparison of the different texture components observed on the three substrate orientations suggests a strong preference for the alignment of CoSi₂{110} planes in the film with Si{110} planes in the substrate, and twinning around Si[111] directions.     

EBSD Investigation on Oriented Nucleation in IF Steels

The mechanism responsible for the formation of recrystallization texture in cold-rolled Ti bearing interstitial free （IF） steel sheets was investigated using electron back-scatter diffraction （EBSD）. In addition, the origin of nuclei with specific orientations was studied. The formation of recrystallization texture was explained by oriented nucleation. Most nuclei have a high misorientation angle of 25-55° with the surrounding deformed matrices, but no specific orientation of misorientation axis between the nucleus and the surrounding deformed matrix is observed. The stored energy of deformed grains is in the decreasing order of the {111}〈112〉,{111}〈110〉, {112}〈110〉 and {001}〈110〉 orientations. New {111}〈110〉 grains are nucleated within deformed {111}〈112〉 grains and new {111}〈112〉 grains originate in the deformed {111}〈110〉 grains.     

Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition

The evolution of microstructure and texture of molecular beam deposited Si_0.7Ge_0.3 films on SiO₂ at the deposition temperature range of 400–700°C was investigated by X-ray diffraction and transmission electron microscopy. At deposition temperatures between 400 and below 500°C, the films were directly deposited as a mixed-phase on SiO₂ and have a inversely cone-shaped structure. In this temperature range deposited as a mixed-phase, the grain size increases as the temperature increases, so that the grains not only grow up by deposition, but also laterally grow by the solid phase crystallization, furthermore, the texture is changed from a {110} texture to mixed {311} and {110} textures. At 500°C, the film was deposited as only a crystalline phase and has a columnar structure with a strong {110} texture. In the temperature range of 500–700°C, as the temperature increases, the {311} and {111} textures develop whereas the {110} texture reduces. The film deposited at 700°C has a random orientation and structure.     

Structure of chemically deposited polycrystalline-silicon films

The influence of the deposition conditions on the structure of chemically deposited, polycrystalline-silicon films has been examined. The films were deposited primarily onto oxidized silicon wafers by the thermal decomposition of silane over temperature and thickness ranges of 650°–1200°C and 0.6–15 microm, respectively. After an initial induction period, which exhibits an activation energy of about 1.0 eV, island-type nucleation was observed for deposition temperatures of 850° and 1025°C; however, no islands could be resolved for a deposition temperature of 650°C. Although {110}- and {111}-texture are both important in the thinner films, {110}-texture becomes dominant over most of the temperature range as the film thickness increases. The {100}-texture is important in thicker films deposited at higher temperatures. Transmission electron microscopy indicated that the grain size increases with increasing film thickness and deposition temperature, ranging from less than 0.05 microm to more than 1 microm in the films studied. An investigation of the influence of the initial stages of deposition on the development of the texture indicated that the highly twinned {110}-grains, once nucleated, grow most rapidly. An anomalous, low-temperature structure, the effect of the reactant gas, and the influence of the substrate have been briefly investigated.     

提高YBCO薄膜高场性能的研究

采用低氟的金属有机盐沉积技术(MOD)在LAO单晶上制备了Gd和Zr掺杂的YBCO薄膜, 并分析了不同掺杂对YBCO薄膜在外加磁场下的Jc的影响. 研究发现, 采用Gd部分取代YBCO薄膜中的Y元素, 可以有效地提高YBCO薄膜高场下的J_c值, 但对于低场下的Jc值影响不大; 而采用过量Gd掺杂YBCO薄膜, 可以有效地提高YBCO薄膜在低场下的J_c值, 但对于高场下的J_c值影响不大. 而Zr掺杂可以有效地提高YBCO薄膜在低场和高场下的J_c值. 最后, 结合Gd取代和Zr掺杂两种方式, 有效地提高了YBCO薄膜的场性能, 其最大钉扎力(Fp(Max))达到了16GN/m³, 比纯的YBCO薄膜(4.0 GN/m³)提高了约3倍; 在磁场为3T和7T下, 其J_c值分别为1.31MA/cm²和87.7kA/cm².     

Evolution of textures in hot rolled Nb - Ti and V - Nb microalloyed steels

Abstract

A considerable texture gradient in the through thickness direction was observed during hot rolling of Nb - Ti and V - Nb microalloyed steels. The most intense deformation texture for Nb- Ti steels was {113}〈110〉 at all depths, whereas for V - Nb steels the plane was shifted to {115}〈110〉 ; the angular difference between {113} and {115} is about a degree. The recrystallisation texture of austenite, {100}〈001〉 , transformed into {100} 〈011〉 component in the ferrite and indicated an increase in the intensity with increase in depth for both Nb - Ti and V - Nb steels. However, the intensity of this {100}〈011〉 texture was less for Nb - Ti steels compared to V - Nb steels at all depths. The reduced intensity of {100}〈011〉 texture in Nb -Ti steels is likely to be the reason for the superior formability and improved toughness of Nb - Ti steels as compared with V - Nb steels. The {100}〈011〉 type of texture has an undesirable effect on the edge formability of steels.