106cm的PDP,对比度高达300:1

据报道，继1996年11月富士通推出106cm的PDP以来，NEC以同样的120万日元售价推出了106cm级PDP。但对比度远远地高于富士通的产品，富士通的对比度为60∶1，而NEC的产品高达300∶1。为了提高亮度低下时的对比度，该公司改变了驱动方法。过去的彩色PDP，在每一帧使用了至少使全象素一次引火放电的驱动方式。为实现灰度显示，必须增加放电次数。如，8bit的亮度信号下显示256灰度时，在一帧内至少进行八次引火放电。其结果是提高了黑色显示的亮度，而在环境亮度差的情况下，对比度下降。而这次NEC只需一次引火放电就可进行256灰度显示。…     

彩色AC-PDP扫描驱动控制时序的FPGA实现研究

针对传统彩色AC-PDP扫描驱动控制电路8子场地址显示分离（ADs）驱动方式存在的缺陷,采用分割和优化子场排列顺序的ADS驱动设计方法。给出了基于现场可编程门阵列（FPGA）器件的PDP扫描驱动控制电路的结构、原理及相应Verilog HDL后仿真波形,成功实现了对富士通42寸PDP显示屏的扫描驱动控制,有效改善了动态伪轮廓现象。     

彩色PDP的新型CLEAR驱动方法及其改进

开发了一种应用于彩色PDP的新型驱动CLEAR(高对比度、低能量寻址和减小动态假轮廓)方法，可以在确保充分的寻址余度的同时，使准备期变为每1TV场一次，从而降低了显示“黑”时候的辉度，暗室对比度可以达到560:1；将每个单元的寻址脉冲变为每1TV场一次，减少了寻址驱动时的能量消耗；将子场发光配置为连续方式，这样从原理上解决了动态假轮廓的影响，并通过计算找到了一种改进CLEAR技术的有效方法。     

彩色等离子体显示器的暗场增强技术

采用线性延伸编码方案显示的彩色等离子体显示器 (PDP) ,在消除动态假轮廓方面效果显著 ,然而在暗场显示时图像灰度等级明显不够。引入随图像峰值亮度变化而改变的浮点数倍乘因子来调节发射光脉冲数 ,提高了彩色PDP暗场显示时图像的灰度等级 ,使图像质量得到明显改善。同时 ,彩色PDP的亮度调节等级可扩充至几十级 ,比采用整数倍乘因子的彩色PDP亮度调节等级提高近 10倍。     

一种基于实验数据采集的彩色PDP动态伪轮廓评价方法

提出一种基于实验数据采集的彩色PDP动态伪轮廓评价方法,在现有距离法的基础上,对其不足之处进行了改进,综合考虑了实际PDP荧光粉的发光特性,可区分RGB三色荧光粉对动态伪轮廓的影响程度.本评价方法无需事先了解PDP具体驱动方式,包括子场权重和时序方案等信息,完全通过实验数据采集,能更准确和客观地对DFC进行评价.本评价方法可以用于对PDP各种改善DFC的驱动方式进行优化,提高PDP显示质量.     

彩色等离子体显示器的新进展

扼要地介绍了近年来世界上各大公司对彩色PDP的结构和驱动方法的改进 ,将现今彩色PDP的亮度、对比度和色纯度等主要性能与过去相比 ,得到明显的改善 ,达到了与高清晰度CRT相当的性能。     

彩电亮度低的检修方法

一台长城JTC512型彩电,出现亮度低,图像只有模糊彩色轮廓的故障。由故障现象可知是无亮度信号引起的,应从亮度驱动电路查起,这部分工作原理见附图所示。经检测,亮度信号驱动管Q_(253)的e极电压为8.5V(正常值为6.8V).b极电压亦高于正常值,说明这部分电路工作异常。为了排除相关电路的影响,断开D_(082),使其与数字显示驱动电路分开,这时发现Q_(253)的e极、b极电压恢复正常,光栅渐亮,图像呈品红色。     

电真空器件

0114775彩色 PDP 的驱动集成电路[刊]/彭国贤//国外电子元器件.—2001,(4).—16～21(C)彩色 PDP 显示系统是目前大型壁挂式电视、HDTV 和大型多媒体显示技术的发展趋势,文中从PDP 显示屏的特点出发,介绍了彩色 PDP 驱动集成电路的基本结构和性能特点,并给出了 PDP 显示屏的两种接口电路。     

VGA级大屏幕印刷型FED视频显示系统的研制

论述印刷型场致发射显示器驱动系统的工作原理,介绍了采用DVI、VGA视频接口技术、专用集成图像灰度调制和集成扫描电路接口技术以及FPGA控制等技术研制出了能驱动显示VGA分辨率的印刷型FED视频显示系统。该系统能显示各种彩色视频图像,图像亮度已达400cd/m2、对比度达1 000:1,电路灰度等级达256级,有效显示对角线尺寸为635 mm(25 in)。     

驱动等离子平板显示器的集成式多芯片模块

引言等离子平板显示器(PDP)由于具有视角宽、轻薄灵活、对比度高和屏幕尺寸大等优势,已成为目前市面上领先的大尺寸平板显示器。为使图像有一个合理的亮度,大多数PDP都采用地址显示分离(ADs)的驱动方式。这种方法包括直接复     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks