Gain measurements on the KrF(B→X), XeF(B→X), and XeF(C→A) lasertransitions in an XeF(C→A) laser gas mixture

Optimum energy extraction from an electron-beam-pumped XeF(C →A) laser is achieved with a five-component rare gas halide mixture. The characterization and modeling of laser action in such a gas mixture requires a knowledge of small-signal gain and absorption coefficients not only on the blue-green XeF(C→ A) transition, but also in the ultraviolet (UV) region for the competing XeF(B→X) and KrF(B→X ) transitions. The authors report gain measurements on the XeF(C→A) transition and small-signal gain and absorption coefficients at or near both the XeF(B→X ) (351 and 353 nm) and KrF(B→X) (248 nm) transitions. A study of the gain for the UV and visible transitions as a function of Kr and Xe partial pressure is reported, and its impact on the XeF(C→A) kinetics is discussed     

Confidence bounds for Pr{X>Y} in 1-way ANOVArandom model

Approximate confidence bounds for reliability, R=Pr{X >Y|X,Y}, are obtained, where X and Y are independent normal (Gaussian) random variables, and X and Y are vectors of measurements for X and Y, respectively. Balanced 1-way ANOVA (analysis of variants) random effect models are assumed for the populations of X and Y. Confidence bounds are derived for R under three cases for standard deviations, σ_x and σ_y. An example shows how the results are used     

Dark current analysis and characterization ofInxGa1-xAs/InAsyP1-y gradedphotodiodes with x>0.53 for response to longer wavelengths(>1.7 μm)

The dark current properties of In_xGa_1-xAs photodiodes, where x is varied from 0.53 to 0.82 for extending the long wavelength cutoff from 1.7 to 2.6 μm, are described. Detailed analyses of optoelectrical parameters of In_0.82Ga _0.1As photodiodes are presented. Dark current, which is a critical parameter and limits the operation of the photodiode, is analyzed and compared with the experimental values. Typical characteristics of photodiodes with cutoff wavelengths of 1.7 μm (x=0.53), 2.2 μm (x=0.72), and 2.6 μm (x=0.82) are presented. The typical and best values of the dark currents obtained are presented     

Relationships between m-sequences over GF(q) andGF(qm)

It is shown that m-sequences over GF(q^m ) of length q^nm-1 corresponding to primitive polynomials in GF[q^m,x] of degree n can be generated from known m-sequences over GF(q) of length q^nm-1 obtained from primitive polynomials in GF[q,x] of degree mn. A procedure for generating the m-sequences over GF(q²) from m-sequences over GF(q) was given which enables the generation of m-sequences over GF( p²ⁿ). In addition it was shown that all of the primitive polynomials in GF[q,^m,x] can be obtained from a complete set of the primitive polynomials in GF[q ,x]     

1/f noise in GaAs filaments

A typical 1/f noise is excited in GaAs filament with the Hooge noise parameter of about α_H=2×10^-3 . The noise level increases in proportion to the square of the terminal voltage, and decreases approximately in inverse proportion to the total number of carriers within the device. A transition from the typical 1/f noise characteristics to the diffusion noise characteristics of MESFETs was observed when the electric field was increased above 1 kV/cm. The noise parameters were also investigated as a function of the device width between 2 and 200 μm. Deep levels within the n-GaAs active layer and the high electric field are the main factors of the nonideal 1/f characteristics     

Simplified Z-propagating DC bias stable TE-TM modeconvertor fabricated in Y-cut lithium niobate

A TE-TM mode converter, useful at either 0.632 or 0.840 μm, has been fabricated on y-cut LiNbO₃ by Ti indiffusion with the channel waveguide placed parallel to the z-axis. For TE polarized input, the maximum TM modulation depth is 97 percent at 0.632 μm with a 5-V (pp) drive and 99 percent at 0.840 μm with a 12-V (pp) drive. A similar device operating at 1.3 μm displays 98-percent TE-TM switching at 68 V. Operation involves only coplanar electrodes placed alongside the channel acting on the r₆₁ electrooptic coefficient. A separately deposited buffer layer is unnecessary. Testing indicates a substantially greater tolerance to electrode misalignment than afforded by similar structures formed in x-cut substrates. Data illustrating immunity to photorefractive drift in the presence of a DC bias voltage is presented for 0.840-μm wavelength operation     

Nonlinear optical and electrooptical effects in 2-methyl-4-nitro N-methylaniline (MNMA) crystals

Single crystals of 2-methyl-4-nitro-N-methylaniline (MNMA) have been grown from the melt. The crystal structure was determined (orthorhombic, Pna2_I (2 mm), Z=4, a =17.788(6) Å, b=11.893(4) Å, c=3.907(2) Å). The refractive indexes n_a and n_c were measured between 500 and 700 nm [ n_a(633 nm)=2.148(10), n_c(633 nm)=1.520(3)]. The nonlinear optical susceptibilities coefficients r ₃₁=8 pm/V and r₃₃=7.5 pm/V were determined. Most optical properties can be explained in terms of molecular orientation and polarizability     

The (d,k) subcode of a linear block code

A simple technique employing linear block codes to construct (d,k) error-correcting block codes is considered. This scheme allows asymptotically reliable transmission at rate R over a BSC channel with capacity C_BSC provided R ⩽C_d,k-(1+C_BSC), where C_d,k is the maximum entropy of a (d,k ) source. For the same error-correcting capability, the loss in code rate incurred by a multiple-error correcting (d,k) code resulting from this scheme is no greater than that incurred by the parent linear block code. The single-error correcting code is asymptotically optimal. A modification allows the correction of single bit-shaft errors as well. Decoding can be accomplished using off-the-shelf decoders. A systematic (but suboptimal) encoding scheme and detailed case studies are provided     

Si/a-Si:H heterojunction microwave bipolar transistors with cut-offfrequencies ft above 5 GHz

The fabrication of a silicon heterojunction microwave bipolar transistor with an n⁺ a-Si:H emitter is discussed, and experimental results are given. The device provides a base sheet resistance of 2 kΩ/□ a base width 0.1 μm, a maximum current gain of 21 (V_CE=6 V, I_c=15 mA), and an emitter Gummel number G _E of about 1.4×10¹⁴ Scm^-4. From the measured S parameters, a cutoff frequency f_t of 5.5 GHz and maximum oscillating frequency f_max of 7.5 GHz at V_CE=10 V, I_c=10 mA are obtained     

Scaling characteristics of the XeF (C→A)excimer laser

The scaling characteristics and medium properties of an injection-controlled XeF(C→A) laser pumped by a 10-ns-high current density electron beam have been investigated. A five-component laser gas mixture, consisting of F₂, NF₃ , Xe, Kr, and Ar was optimized for the scaled laser conditions, resulting in 0.8-J output pulses at 486.8 nm, corresponding to an energy density of small-signal-gain measurements combined with kinetic modeling permitted the characteristics of the dependence of net gain on the electron-beam energy deposition and gas mixture composition, resulting in an improved understanding of XeF(C→A) laser operation     

1/f noise in MODFETs at low drain bias

The 1/f noise in normally-on MODFETs biased at low drain voltages is investigated. The experimentally observed relative noise in the drain current S_I/I² versus the effective gate voltage V_G=V_GS-V_off shows three regions which are explained. The observed dependencies are S_I/I²∝V_G ^m with the exponents m=-1, -3, 0 with increasing values of V_G. The model explains m =-1 as the region where the resistance and the 1/f noise stem from the 2-D electron gas under the gate electrode; the region with m=0 at large V_G or V_GS≅0 is due to the dominant contribution of the series resistance. In the region at intermediate V_G , m=-3, the 1/f noise stems from the channel under the gate electrode, and the drain-source resistance is already dominated by the series resistance     

Analysis of N×N passive optical starcoupler based on the normal modes of N input waveguides

An integrated passive N×N optical star coupler on silicon wafer is described. Antiresonant reflecting optical waveguides (ARROWs) are analyzed and utilized as the input and output waveguides of the N×N coupler. Combining the exact solutions of the slab ARROW waveguide with the effective index method, a 5×5 coupler is analyzed. In the slab waveguide analysis, the input waveguides are coupled to their neighbors. The interaction of the waveguides is described in terms of the normal modes of propagation. The resultant field distribution is then diffracted into the free space region which separates the input and output sections. The radiation illuminates the receiving aperture from which the receiving N waveguides branch out, each output element obtaining equal power levels. Different types of loss such as spillover loss and mismatch loss were analyzed and estimated for N=5. A 5×5 star coupler with a transmission efficiency of 56% at a wavelength of 1.3 μm is achievable     

Effective recursive algorithm for computing multiplicative inversesin GF(2m)

Presents an effective recursive algorithm for computing multiplicative inverses in GF(2^m), where m=2^k, employing normal bases. The proposed algorithm requires m-1 cyclic shifts and two multiplications in GF (2^m) and in each subfield of GF(2^m): GF(2^m/2), GF(2^m/4),. . ., GF (2⁸) and GF(2⁴)     

New multilevel codes over GF(q)

Set partitioning is applied to multidimensional signal spaces over GF(q), i.e., GFⁿ¹(q) (n1⩽q ), and it is shown how to construct both multilevel block codes and multilevel trellis codes over GF(q). Multilevel (n, k, d) block codes over GF(q) with block length n, number of information symbols k, and minimum distance d_min⩾d are presented. These codes use Reed-Solomon codes as component codes. Longer multilevel block codes are also constructed using q-ary block codes with block length longer than q+1 as component codes. Some quaternary multilevel block codes are presented with the same length and number of information symbols as, but larger distance than, the best previously known quaternary one-level block codes. It is proved that if all the component block codes are linear. the multilevel block code is also linear. Low-rate q-ary convolutional codes, word-error-correcting convolutional codes, and binary-to-q-ary convolutional codes can also be used to construct multilevel trellis codes over GF(q) or binary-to-q-ary trellis codes     

Characterization of an ultrahigh peak powerXeF(C→A) excimer laser system

The gain characteristics of an electron-beam pumped XeF(C→A) excimer amplifier operating in the blue-green spectral region were investigated for several laser pulse lengths. Saturation energy densities of 50 and 80 mJ/cm² were measured for injected laser pulse durations of 250 fs and ~100 ps, respectively. A gain bandwidth of 60 nm was observed with ~100-ps pulse injection. Using an optimized unstable resonator design, the laser amplifier has produced 275-mJ pulses with a pulse duration of 250 fs and a 2.5 times diffraction-limited beam quality, making the XeF(C→A) amplifier the first compact laser system in the visible spectral region to reach peak powers at the terawatt level     

A nonsorting VLSI structure for implementing the (M, L) algorithm

A nonsorting structure for implementing the (M, L) algorithm is presented. The processing is based on a survivor selection operation that incorporates parallelism and has an execution time proportional to the product of the logarithm of bM (the number of contender paths), and k (the number of bits used for path metrics). Aside from the path extender(s), the processor area is only a small fraction of the total chip area; most is simply for required storage of path histories and metrics. This means that the structure can support a large M on a single chip. In addition, the structure can be extended to larger M by stacking rows of a few different types of custom chips     

An O(kn)-time algorithm for computing thereliability of a circular consecutive-k-out-of-n:Fsystem

I. Antonopoulou and S. Papastavridis (1987) published an algorithm for computing the reliability of a circular consecutive-k-out-of-n:F system which claimed O (kn) time. J.S. Wu and R.J. Chen (1993) correctly pointed out that the algorithm achieved only O(kn²) time. The present study shows that the algorithm can be implemented for O(kn) time     

A geometric approach to root finding in GT(qm)

The problem of finding roots in F of polynomials in F [x] for F=GF(q^m), where q is a prime or prime power and m is a positive integer greater than 1 is considered. The problem is analyzed by making use of the finite affine geometry AG(m,q). A new method is proposed for finding roots of polynomials over finite extension fields. It is more efficient than previous algorithms when the degree of the polynomial whose roots are to be found is less than dimension m of the extension field. Implementation of the algorithm can be enhanced in cases in which optimal normal bases for the coefficient field are available     

Injection control of a long-pulse electron-beam pumped XeF (C→A) laser

An XeF (C→A) laser, pumped at a rate of 290 kW/cm³ with a 600-ns electron-beam pulse, has been operated as an injection-controlled oscillator. A stable cavity has been injected with radiation from a pulsed dye laser source. A significant reduction in laser turn-on time has been achieved, and the laser pulse duration has been extended to 500 ns (FWHM). As a consequence, the laser intrinsic efficiency and specific output energy have been increased by approximately 50%, to 1.8% and 3 J/L, respectively, which represent the best performance obtained thus far for any directly electrically excited XeF (C→A) laser. Also, by injecting a narrowband signal into the cavity, the XeF (C→A) laser linewidth has been reduced by more than two orders of magnitude, to less than 1.3 Å, the resolution of the spectrometer. The laser wavelength has been tuned from 478.6 to 486.8 nm, with less than a factor of two variation in output energy     

GaAs/AlGaAs heterojunction Pnp bipolar transistors grownon (100) Si by molecular beam epitaxy

GaAs/AlGaAs Pnp heterojunction bipolar transistors (HBTs) were fabricated and tested on (100) Si substrates for the first time. A common-emitter current gain of β=8 was measured for the typical devices with an emitter area of 50×50 μm² at a collector current density of 1×10⁴ A/cm² with no output negative differential resistance up to 280 mA, highest current used. A very high base-collector breakdown voltage of 10 V was obtained. Comparing the similar structures grown on GaAs substrates, the measured characteristics clearly demonstrate that device grade hole injection can be obtained in GaAs on Si epitaxial layers despite the presence of dislocations