自由电子激光器虚火花束源的480 kV实验

介绍了虚火花放电实验 .改变马克斯发生器开关中的放电气体 ,提高了放电的稳定性 .改善虚火花放电室外绝缘油的性能 ,获得了能量为 4 80 ke V,束流为 13k A的电子束 ,电子束的传输距离达到 75cm.证明了摇摆器磁场能提高电子束聚焦性能 .     

The Experimental Study of Novel Pseudospark Hollow Cathode Plasma Electron Gun

The high-power microwave devices with plasma-filled have unique properties. One of the major problems associated with plasma-filled microwave sources is that ions from the plasma drift toward the gun regions of the tube. This bombardment is particularly dangerous for the gun, where high-energy ion impacts can damage the cathode surface and degrade its electron emission capabilities. One of the techniques investigated to mitigate this issue is to replace the material cathode with plasma cathode. Now, we study the novel electron gun (E-gun) that can be suitable for high power microwave device applications, adopting two forms of discharge channel, 1: a single hole channel, the structure can produce a solid electron beam; 2: porous holes channel, the structure can generate multiple electronic injection which is similar to the annular electron beam.     

自由电子激光器虚火花电子束源的阻抗匹配研究

分析了自由电子激光器的小型虚火花电子束源在去掉脉冲传输线的情况下的阻抗匹配问题 ,并对此进行放电实验。得到了虚火花放电过程中的放电室阻抗曲线 ;并利用小型放电装置在 2 5 5kV的放电电压下得到了束流强度为 4 3kA的电子束输出。     

自由电子激光器虚火花放电高压电源的改进

提出了对虚火花放电高压电源进行改进的方案。给出了实验装置，并从理论上分析了它的可行性。由此可大大减小传统的拉曼自由电子激光器的外形尺寸，使其小型化和广泛应用成为现实     

行波管电子注测量分析系统

初步提出了一台行波管电子注测量分析系统的设计方案。进一步分析了基于法拉第筒探针的脉冲测量的方法,并考虑脉冲上升沿的抖动特性造成电子注的不稳定性,减少测量误差。分别对测量电子注纵向速度分布的两种方法进行了探讨。     

HSQ用于电子束曝光的性能分析

作为一种非化学放大的无机负性电子束光刺抗蚀剂,HSQ(hydrogen silsesquioxane)具有极高的分辨率(约5 nm),由于灵敏度较低,限制了其在微纳米加工方面的应用.从化学结构变化的角度分析了HSQ在电子束曝光中的性能,通过实验验证了其灵敏度及对比度受前烘温度及显影液浓度的影响较大,并且其在电子束曝光中的邻近效应也可以通过改变这两个条件而得到一定的抑制.根据所得优化工艺条件,在450 nm胶层上,制作出100 nm等间距光栅结构胶层图形,且其侧壁陡直性良好.     

Bonding-Failure Analysis with Electron Beam and Nuclear Scattering Techniques

Failure mechanisms related to gold bonding were determined using the scanning electron microscope, Auger electron spectroscopy, X-ray energy dispersive spectroscopy, electron microprobe analysis, and deuteron probe analysis. Power transistors from different lots were analyzed; there were four types of bond defects. Type I defect is darkened carbon inclusions in the bond area. Type II defect is a carbon buildup region on the posts probably in the form of graphite particles which adhered to the gold plating during processing. Type III defects are adsorbed carbon surface films. Type IV defects are gross discontinuities in the gold plating. Auger electron spectroscopy analysis and electron probe analysis proved that defects I, II, and III are subsurface and that further exposure to time-temperature and stress will result in carbide precipitates and hence cracks at the interface. Deuteron probe (DP) analysis of the same bond area has shown the presence of subsurface carbon (the predominant contaminant) thus verifying the Auger results. Contaminants such as manganese, iron boron, cobalt, nickel, chlorine, and sulfur were detected by energy dispersive X-ray analysis in concentrations of 100 ppM or more. These contaminants result in microcracks and voids which are formed by a time-temperature process. All bond-pull data had a bimodal distribution similar to that reported by Horsting. The bimodal distribution of pull-strength, carbon subsurface inclusions, and excessively high levels of contamination (from the plating bath), all indicate that a contamination-related failure mode exists.     

纳米电子束曝光

JEOL JBX- 5 0 0 0 L S是矢量扫描的电子束曝光机 .系统采用 L a B6 灯丝 ,可以工作在 2 5 k V和 5 0 k V的加速电压下 .对该系统的分辨率、稳定性、场拼接和套刻精度进行了系列研究 ,得到了分辨率为 30 nm的图形 ,图形的套刻精度也优于 4 0 nm.     

纳米电子束曝光

JEOL JBX-5000LS是矢量扫描的电子束曝光机.系统采用LaB6灯丝,可以工作在25kV和50kV的加速电压下.对该系统的分辨率、稳定性、场拼接和套刻精度进行了系列研究,得到了分辨率为30nm的图形,图形的套刻精度也优于40nm.     

Numerical Analysis of the C-Band Klystrode with Annular Electron Beam

A klystrode oscillator cavity is designed using annular electron beam in the C-band frequency that can be easily scaled to S and X bands. Beam electrons are assumed pre-modulated and injected into the toroidal cavity in the shape of thin reentrant resonator with the grid structure built in the beam entrance. We optimize the beam conversion efficiency via the MAGIC code in the range of sixty to seventy percent with the fundamental TM₀₁-mode which is fine tuned by the 3D HFSS code. The annular electron beam has a merit to permit the center coupling to the adjacent cavity to enhance and stabilize the beam pre-modulation in addition to increased power handling capability.     

Experimental Evidence of Relativistic Doppler Frequency Conversion on a Relativistic Electron Beam Front

Frequency conversion of microwaves from X to Ka band is observed upon their reflection from the front of an intense relativistic electron beam in two different machines. The incident X-band microwaves derive from emission of the beam itself. The results are in qualitative agreement with the expected beam front velocity monitored from variable gas pressure, and a pulse compression, associated with beam front reflection, is observed.     

电子束曝光中低能电子散射的模拟

介绍了Pendry弹性散射截面,描述了电子在固体中的散射过程,包括散射步长、散射角、方位角和散射点处能量的确定,并将Pendry截面和Monte Carlo计算方法应用到电子散射过程中。分别改变入射电子束能量、抗蚀剂厚度和衬底材料,模拟了能量不超过5keV的低能电子束在PMMA抗蚀剂中的散射轨迹。模拟结果表明,低能电子束曝光同样可应用于较高分辨率的表面成像技术工艺。通过对模拟结果和电子束曝光实验比较分析,可以进一步完善散射模型,为更深入开展电子束曝光技术的应用研究创造有利条件,同时也为开发低成本的低能电子束曝光系统提供了理论依据。     

行波管电子注测量系统探头的热分析

本文介绍了一台行波管电子注测量分析系统,并且对其中关键的法拉第筒探头进行了热分析。通过理论和仿 真计算探头的脉冲以及稳态温度分布。探头只在每个脉冲电子束团轰击期间产生一个较高的脉冲峰值温度,探头的稳 态温度较低。通过测试结果表明,探头的稳态温度要比仿真结果高,但是远低于探头损坏的温度,探头适用于测量系 统。     

电子束曝光中电子散射模型的优化

提出了在0.1 keV～30 keV能量范围内进行电子束曝光Monte Carlo模拟的分段散射模型优化方案.在该方案中,对所有的弹性散射均采用精确的Mott弹性散射截面.而对非弹性散射,当能量处于E0≤10 keV,10 keV＜E0≤20 keV和E0＞20 keV时,分别采用了Jov修正的Bethe公式、通常的Bethe公式和相对论效应修正的Bethe公式来计算总能量损失率;当E0≤20 keV和E0＞20 keV时,分别采用了Grvzinskv截面和Moller截面计算离散的能量损失率.发现模拟结果与实验结果很好地吻合,这比采用单一的散射模型和不考虑二次电子的Bethe公式得到的模拟结果更加符合实际的电子散射过程,其精度更高.     

TEM电子束诱导硅表面氧化的分析

洁净硅表面在电子束的作用下产生诱导氧化现象,在AES分析中已得到证实。本文利用TEM 200CX型电镜研究了洁净硅表面在电子束作用下的结果,实验表明,在TEM中同样存在着电子束诱导硅表面氧化的现象,氧化生成了SiO_2微晶,其氧主要来自硅晶体内氧的局部富集和电镜中残余气体在硅表面的吸附。     

高斯电子束曝光系统

电子束光刻技术是纳米级加工技术的主要手段,在纳米器件加工、掩模制造、新器件新结构加工中扮演举足轻重的角色。虽然现在最先进的电子束聚焦技术可以得到几个纳米的电子束斑,但是由于邻近效应问题,依然很难使用电子束光刻技术得到接近其理论极限的纳米尺度图形,对电子束曝光系统的基本原理及其邻近效应校正技术进行了研究,并得到一些比较理想的曝光结果。     

相干电子束实验装置的研制

相干电子束能提供样品上许多重要的信息,点投影显微镜是研究电子束相干特性的有利工具,而高亮度相干电子束可以大大改善电子光学系统空间分辨和能量分辨,可以应用于电子全息摄影和电子干涉测量等领域。本实验装置包括三种模式:①点投影显微镜模式,可以用来研究相干电子束特性;②场离子显微镜模式,可以研究表面原子结构,提供具有原子分辨的实空间原子排列信息;③场发射显微镜模式,可以研究针形样品的场发射特性。这三种模式在一个超高真空系统中可以实时互换。目前实验装置已经达到3.1×10-8Pa压强,并观测了电子显微镜栅网的放大像。     

电子束直写圆片技术

本文扼要介绍了电子束直写圆片的原理，地形标记的识别，以及电子束曝光系统能识别的圆片标记的制造技术。     

Electron Beam Testing of FPGA Circuits

The growing use of FPGA circuits has made it necessary to perform accurate debug and internal testing of these circuits. To meet this challenge, we have developed an innovative method which makes it possible to use existing Electron Beam Testers to investigate the internal functionality of programmable circuits. This approach is based on the generation of a circuit layout linked to the electrical schematic for contactless measurement on the circuit.     

电子束激励氟化氢激光实验研究

介绍了利用SPG-200脉冲功率源产生电子束激励氟化氢激光的实验研究情况。重点介绍了实验装置的结构及主要性能指标,给出了不同气体混合比例和不同气压条件下激光输出特性的测量结果,并对实验结果进行了分析。在二极管电压约为190kV,二极管电流约为1.9kA,气体混合比例为C2H6∶SF6=0.35∶10,气室气压为30kPa的条件下,获得了稳定的激光输出。谐振腔为平凹腔时,最大输出能量4.55mJ;谐振腔为平行平面腔时,最大输出能量5.22mJ。