700V三层RESURF nLDMOS优化设计

提出了一种利用高能离子注入形成的700 V三层RESURF结构nLDMOS.与双RESURF结构漂移区表面注入形成P-top层不同,三层RESURF结构在漂移区内部形成P型埋层,漂移区表面保留一条N型导电通路,导通电阻有所降低.利用Sentaurus TCAD仿真软件,分析各参数对器件击穿电压和导通电阻的影响.与普通单RESURF和双RESURF结构相比,三层RESURF LDMOS器件的优值(FOM)得到提高,三种结构的优值之比为1∶1.75∶2.03.     

具有L型栅极场板的双槽双栅绝缘体上硅器件新结构

为了降低绝缘体上硅（SOI）功率器件的比导通电阻,同时提高击穿电压,利用场板（FP）技术,提出了一种具有L型栅极场板的双槽双栅SOI器件新结构.在双槽结构的基础上,在氧化槽中形成第二栅极,并延伸形成L型栅极场板.漂移区引入的氧化槽折叠了漂移区长度,提高了击穿电压;对称的双栅结构形成双导电沟道,加宽了电流纵向传输面积,使比导通电阻显著降低;L型场板对漂移区电场进行重塑,使漂移区浓度大幅度增加,比导通电阻进一步降低.仿真结果表明：在保证最高优值条件下,相比传统SOI结构,器件尺寸相同时,新结构的击穿电压提高了123%,比导通电阻降低了32%;击穿电压相同时,新结构的比导通电阻降低了87.5%;相比双槽SOI结构,器件尺寸相同时,新结构不仅保持了双槽结构的高压特性,而且比导通电阻降低了46%.     

超低比导通电阻SOI双栅槽型MOSFET

本文提出了超低比导通电阻(Ron,sp) SOI双栅槽型MOSFET(DG Trench MOSFET)。此MOSFET的特点是拥有双栅和一个氧化物槽：氧化物槽位于漂移区,一个槽栅嵌入氧化物槽,另一个槽栅延伸到埋氧层。首先,双栅依靠形成双导电沟道来减小Ron,sp;其次,氧化物槽不仅折叠漂移区,而且调制电场,从而减小元胞尺寸,增大击穿电压。当DG Trench MOSFET的半个元胞尺寸为3μm时,它的击穿电压为93V,Ron,sp为51.8mΩ?mm2。与SOI单栅MOSFET(SG MOSFET)和SOI单栅槽型MOSFET(SG Trench MOSFET)相比,在相同的BV下,DG Trench MOSFET的Ron,sp分别地降低了63.3%和33.8%。     

低比导通电阻P埋层SOI双介质槽MOSFET

提出了一种带P型埋层的新型SOI双介质槽MOSFET.通过在SOI层底部引入P型埋层作为补偿,在耐压优化情况下增加漂移区的浓度,降低了比导通电阻.MEDICI TCAD仿真结果表明:在281 V击穿电压下,该结构的比导通电阻为4.6 mΩ·cm2,与不带P型埋层的结构相比,在达到同样耐压的情况下,比导通电阻降低了19％.     

新型双RESURF TG-LDMOS器件结构

研究了采用双RESURF技术的槽栅横向双扩散MOSFET(DRTG-LDMOS).讨论了双RESURF技术对击穿电压的影响,以及DRTG-LDMOS的电容特性.与传统的槽栅器件结构相比,新结构在相同的漂移长度和导通电阻下,击穿电压提高了30V,并表现出优异的频率特性.     

一种带氧化槽的双栅LDMOS

提出了一种带氧化槽的双栅体硅LDMOS结构(DGT LDMOS).在漂移区中引入一个氧化槽,在该槽上形成埋栅,同时形成一个槽栅.首先,双栅形成双导电沟道,减小了比导通电阻;其次,氧化槽折叠了漂移区,这不仅调制了电场的分布,而且提高了漂移区的优化浓度,有效提高了击穿电压,降低了比导通电阻.采用二维数值仿真软件MEDICI,对器件参数进行仿真和优化设计.结果表明,相对于普通体硅LDMOS(SG LDMOS),该结构的比导通电阻下降了56.9％,击穿电压提高了82.4％.在相同尺寸和击穿电压下,相对于单槽栅体硅LDMOS(SGT LDMOS),DGT LDMOS的比导通电阻下降了35.4％.     

新型双RESURF TG-LDMOS器件结构

研究了采用双RESURF技术的槽栅横向双扩散MOSFET（DRTG-LDMOS），讨论了双RESURF技术对击穿电压的影响，以及DRTG-LDMOS的电容特性，与传统的槽栅器件结构相比，新结构在相同的漂移长度和导通电阻下，击穿电压提高了30V，并表现出优异的频率特性；     

一种RESURF效应增强的高压低阻槽型SOI LDMOS

本文提出一种RESURF效应增强（Enhanced RESURF Effect）的高压低阻SOI LDMOS（ER-LDMOS）新结构,并研究其工作机理。ER-LDMOS的主要特征是：漂移区中具有氧化物槽;氧化物槽靠近体区一侧具有P条;氧化物槽下方的N型漂移区中具有埋P层。首先,从体区延伸到氧化物槽底部的P条,不仅起到纵向结终端扩展的作用,而且具有纵向RESURF效果,此二者都优化体内电场分布且提高漂移区掺杂浓度;其次,埋P层在漂移区中形成triple RESURF效果,能够进一步优化体内电场并降低导通电阻;第三,漂移区中的氧化物槽沿纵向折叠漂移区,减小了器件元胞尺寸,进一步降低比导通电阻;第四,P条、埋P层、氧化物槽和埋氧层对N型漂移区形成多维耗尽作用,实现增强的RESURF效应,可达到提高漂移区掺杂浓度与优化电场分布的目的,从而降低导通电阻且提高器件耐压。仿真结果表明,在相同的器件尺寸参数下,与常规槽型SOI LDMOS相比,ER-LDMOS击穿电压提高67%,比导通电阻降低91%。     

一种带埋层的超低比导通电阻槽型LDMOS

提出了一种带n型浮空埋层的超低比导通电阻的变k槽型LDMOS(TLDMOS)。新结构在漂移区内引入变介电常数(VK)的深槽结构和自驱动的U型p区,不仅可提高漂移区的掺杂浓度,还可优化体内电场分布。衬底中引入的n埋层在器件阻断时进一步调制漂移区的电场分布。同时,额外p衬底/n埋层结的引入提高了LDMOS的纵向耐压。导通时,由于集成低压电源施加于U型p区,在其周围产生的电子积累层使器件在不增加栅电荷的情况下显著降低了比导通电阻(Ron,sp)。仿真结果表明,与传统TLDMOS相比,在相同元胞尺寸下,新结构的击穿电压提高了59.3%,Ron,sp降低了86.3%。     

埋层深度对Triple-RESURF LDMOS纵向电场和击穿电压的影响

研究了P埋层深度对体硅 Triple-RESURF LDMOS纵向电场和击穿电压的影响。分析表明,当P型埋层靠近器件表面时,纵向电场平均值较小,击穿电压较低;当P型埋层靠近衬底时,优化漂移区浓度较低,器件比导通电阻较大;当P型埋层位于漂移区中部时,器件的BV2/Rs,on设计优值最大。指出了P型埋层在漂移区不同区域时击穿点的位置,以及对应的漂移区浓度取值范围,为横向高压Triple-RESURF LDMOS的设计提供了参考。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.