新型毫米波宽带圆极化微带天线阵列设计*

提出了一种基于H形缝隙耦合的毫米波方形切角圆极化微带天线单元,对影响其轴比特性的各参数进行了分析,并采用这种新型天线单元设计了4×4毫米波宽带圆极化微带天线阵列.仿真结果表明,该天线阵列阻抗带宽(S11＜-10dB)和轴比带宽(AR＜3dB)分别达到了25.9％(32.2 ～41.8GHz)和20.1％(32.6～ 39.9GHz),与传统圆极化微带天线阵列相比,分别提高9.7％和14.7％,天线阵列最大增益为19dB,在整个轴比带宽内,增益均大于15 dB,副瓣电平及交叉极化电平均较低.     

一种用于5G MIMO 系统的宽带高增益圆极化天线

为提升5G无线通信系统容量,设计了一款基于V 形缝隙耦合馈电的宽带高增益圆极化天线。该天线采用双层辐射贴片结构,拓展天线的阻抗带宽,并分别在辐射贴片和寄生贴片上刻蚀一对半径不等、位置正交的双圆形缝隙,有效改善了天线的圆极化特性。通过加载平板反射器提高天线的前后比,实现良好的定向辐射。实测结果表明,驻波比小于2的阻抗带宽为53.55% (2.27~3.93 GHz),在半功率波束宽度范围内轴比小于3 dB,轴比带宽为27.38%(2.9~3.82 GHz),在工作频带内实测的天线平均增益达到8.22 dBi。该天线适合作为5G多天线系统中的智能天线单元进行自适应波束赋形。     

三端口宽带极化可重构紧耦合天线阵列

提出了一种三端口宽带极化可重构紧耦合天线阵列。该阵列单元由蝶形偶极子、阻抗变换器和巴伦组成,通过最大功率传输效率法(MMPTE)优化出天线三个端口的所需最优激励分布,从而实现天线在左旋圆极化(LHCP)和右旋圆极化(RHCP)以及在方位角平面任意角度线极化(LP)多种辐射模式之间的切换。最终优化得到的阵列的尺寸为π×60² mm²×30 mm(π×0.7²×0.35λ₀³=0.549λ₀³,其中λ₀为中心频率处的自由空间波长)。测试结果表明,该阵列在左右旋圆极化和线极化状态下的相对阻抗带宽(|S₁₁|<-10 dB)都为50.7%,且3 dB增益带宽基本能覆盖阻抗带宽。左右旋圆极化轴比小于3 dB,并且轴比带宽(AR<3 dB)可以覆盖整个阻抗带宽。在3.5 GHz处,阵列在各种极化状态下的最大实际增益均大于8.8 dBi。     

一种新型双频双圆极化复合微带天线设计

针对空间微波能量收集的应用场景,提出了一种微带线行波激励的双端口双频双圆极化复合微带天线。该天线由一个工作在低频段的微带圆环和一个工作在高频段的微带圆片复合而成,分别由两种不同的正交十字缝隙耦合馈电,采用微带线级联依次相差90°顺序旋转四馈电实现圆极化,通过对称性结构设计,分别从两个不同端口输入获得双圆极化性能。实验结果表明：在880～960 MHz和1.85～2.45 GHz频带内S11<-10 dB,阻抗相对带宽分别为8.7%和30%;在885～920 MHz和1.86～2.43 GHz频带内轴比小于3 dB,圆极化相对带宽分别为4%和29%;天线的方向性在工作频段内良好,在低频段增益达到5.4 dB,在高频段增益达到7.7 dB。该天线结构紧凑且加工简单,为双端口双频双圆极化天线的研究与设计提供了新思路。     

Ku波段宽带高增益基片集成腔圆极化阵列天线北大核心CSCD

提出了一款应用于Ku波段的宽带高增益基片集成腔(Substrate Integrated Cavity,SIC)圆极化阵列天线。通过引入沿SIC口径面对角线放置的一对半月形寄生贴片和SIC底部馈电纵缝,使SIC中的TM_(211)和TM_(121)谐振模式幅值相等、相位相差90°,产生高增益圆极化辐射。同时,双寄生贴片还引入了一种背腔缝隙耦合振子圆极化辐射模式,扩宽了天线高增益圆极化辐射带宽。在此基础上,设计了一款2×2单元顺序旋转馈电的SIC圆极化阵列天线。阵列天线采用双层基片集成波导顺序相移馈电网络进行馈电,进一步增大了天线的圆极化带宽。综合考虑天线的-10 dB反射系数带宽、3 dB轴比带宽和3 dB增益带宽,测试结果表明,圆极化阵列天线的有效带宽为10.74-13.30 GHz(21.3%),在通带范围内最大增益为14.50 dBi。     

脊波导缝隙圆极化天线的设计*

设计了一种新型脊波导缝隙圆极化天线。在脊波导宽边开并联纵缝,从波导耦合电磁波至其上方的四脊波导圆极化器,实现圆极化辐射。采用脊波导不仅减小了单元尺寸,更改善了天线的带宽性能。重点研究了四脊波导圆极化器对相互垂直的两辐射场分量的影响,优化单元的轴比特性。在提取单元谐振电导的基础上,设计了工作在10GHz 的1×10 圆极化波导缝隙阵列。对天线实物测试得到中心频率处的增益为16.8dB,第一副瓣电平为 25dB,阻抗带宽约为8.5%,相对轴比带宽(AR臆3dB)约为3.2%。     

一种新型圆极化UHF通用型RFID读写器天线

面向超高频(UHF)通用型射频识别(RFID)读写器天线的应用需求,设计了一款完全覆盖全球UHF(840-960MHz)频段的RFID圆极化读写器天线。天线采用平面缝隙贴片结构,以共面波导(CPW)馈电方式实现宽频带圆极化特性。测试结果表明,天线的阻抗带宽为735-1014MHz(S11<-10dB),相对带宽31.9%,并且在840-960MHz频段内S11<-20dB,3dB轴比带宽为838-1134MHz,相对带宽30.0%,工作频带内有大于3.5dBi的平坦增益。仿真结果与测试结果基本吻合,天线结构精简,易于加工,满足全球UHF RFID读写器天线的应用需求。     

倒L形枝节加载宽带圆极化缝隙天线

设计了一种倒L形枝节加载宽带圆极化缝隙天线。天线为单层矩形结构,采用共面波导(CPW)馈电,通过在馈线上端加载倒L形枝节和在环形接地面上加载T 形枝节,实现了天线的宽阻抗带宽和宽轴比带宽特性。实测结果表明,S11 ￡-10 dB 的阻抗带宽达到115%(1.6-5.9 GHz),轴比￡3 dB 的圆极化带宽为48.3% (2.2-3.6 GHz)。该天线结构简单、易于制作,具有较好的应用前景。     

宽带高增益圆极化天线

设计了一种宽带高增益圆极化天线。天线采用双同轴线激励以及威尔金森功分器和90°相位比较器的馈电网络形式实现了天线的宽带圆极化特性。该馈电网络形式能在较宽的频带范围内保持稳定的幅度和相位。通过在蝶形天线外围引入方形环,增加了天线的有效辐射面积,从而显著提高了天线的增益。测试结果显示,该圆极化天线VSWR<1.5的阻抗带宽达到63.6%,3 dB轴比带宽达到66.7%,且在1.1~1.6 GHz频段范围内,右旋圆极化增益＞9.4 dB。     

一种新型宽带双频段圆极化RFID读写天线

提出了一种新型宽带双频圆极化射频识别(RFID)读写天线,由上层的旋转对称折合振子和缝隙加载的方形贴片以及下层的紧凑型馈电网络构成。天线具有两个外部端口,分别激励低频0.9 GHz和高频2.45 GHz双频段的圆极化辐射。借助HFSS对天线进行了建模、仿真和优化,最后采用FR4板材制作天线实物并完成了试验测试。天线的外部尺寸为0.6λ0×0.6λ0×0.1λ0(λ0为0.9 GHz频点下的自由空间波长),测试结果表明,天线在低频段和高频段的-10 dB阻抗带宽和3dB轴比带宽分别为91.1%(4.9%)和87.8%(1.3%),频段内的峰值增益为5.48 dBic(3.63 dBic),最小轴比为1.1 dB(1.2 dB),在高低频段内,天线的辐射方向图对称稳定。该天线不仅能够满足全球通用型UHF频段(0.84~0.96 GHz)和ISM频段(2.4~2.5 GHz)RFID读写应用需求,而且具有低成本、易加工等优点,在物联网领域将具有很好的应用前景。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.