简讯

●Synopsys与Avant!合并致力造就EDA行业杰出供应商根据Synopsys收购Avant!的协议,Avant!将成为Synopsys下属子公司。这项收购预计在今后3～6个月内完成。从事复杂IC设计的Synopsys公司与从事物理设计和IC层次工具设计的Avant!公司的联姻,乃是EDA界的一件大事,是EDA     

Synopsys在上海举办2004年中国用户大会

Synopsys公司于5月25日在上海成功举办了2004年中国用户大会“SNUG CHINA 2004”。此次用户大会的主题是“分享您成功的设计经验”,旨在展示Synopsys在中国市场的成功用户在EDA工具应用方面的卓越成果,并集中探讨电子设计自动化(EDA)业的诸多热点话题。此次大会主要采用宣讲获奖用户论文的方式进行。在大会举办之前,由Synopsys向其国内用户进行了论文的广泛征集,论题主要涉及系统设计及物理设计方法或在Synopsys EDA 工具使用方面拥有的成功经验。之后由来自国内知名高校和学术机构的资深专家组成专门的评审委员会,对所征集的用户…     

Synopsys举办MiniDAC2004亚洲巡回研讨会

Synopsys公司于9月13日和9月15日分别在上海和北京举办“MiniDAC 2004 China”巡回技术研讨会,与用户一同分享全球EDA领域的最新动态与发展趋势,并全面展示Synopsys的平台解决方案和专业化服务项目。此次“MiniDAC 2004”研讨会还     

中国科学院EDA中心获得Synopsys和SUN公司的EDA工具

为帮助中国科学院培养出能够掌握最先进IC设计软件和硬件平台的高级人才,从而推动中国IC产业的发展,Synopsys与SUN公司联手,通过美国Charles Babbage基金会向中国科学院EDA中心赠予20套IC设计全流程EDA工具软件、20台工作站和1台服务器。作为对中国市场长期承诺的一部分,Synopsys公司一直致力于帮助中国加快IC产业,特别是IC设计业的成长。在此次合作中,Synopsys除了上述捐赠活动外,还将提供相最先进工具的同时,也可以分享到其最为丰富的专业化经验。目前,Synopsys和中国科学院在北京共同建立的“先进SoC设计联合实验室”已正式投…     

Synopsys通过培养人才培养市场

Synopsys公司与Sun公司最近联手通过美国Charles Babbage基金会(以下简称CBF)向中国科学院EDA中心捐赠20套IC设计全流程EDA工具软件、20台工作站和一台服务器,旨在帮助中科院培养出能够掌握最先进IC设计软件和硬件平台并能适应未来严峻挑战的高级人才,从而推动中国IC产业发展.藉此机会,本刊记者采访了专程前来参加此次捐赠活动的Synopsys市场发展战略副总裁RichGoldman和Synopsys中国区总经理潘建岳.     

产品焦点

Viewlogic系统公司最近与Summit设计公司合并而成立的Innoveda公司继Synopsys、Cadence、Mentor和Avantl之后成为美国第五大EDA公司,志在成为EDA设计工具的主要供应商。 Innoveda寓意“创新EDA”,它将继续提供包括Viewlogic的板级信号完整性分析工具,PLD/FPGA设计工具,以及summit的基于可视化图形输入的设计工具,面向ASIC的设计工具,软     

“’98电子设计自动化大展”在京举办

Synopsys公司、中国华大集成电路设计中心和Sun公司日前在北京香格里拉饭店联合举办了“’98电子设计自动化大展”,来自各领域的200余名EDA专家参加了此次盛会。本次大会主题是“片上系统——System On a Chip”设计。在系统设计方面,大会安排了应用于GSM、     

Synopsys在中国确立VMM验证方法标准

电子设计自动化（EDA）软件工具商Synopsys今天宣布．由ARM和Synopsys公司推出的SystemVerilog验证方法学（VMM）已被中国主要电子公司用于开发先进验证环境。Synop—sys还宣布，《SystemVerilog验证方法学》一书中文版已由中国航空航天大学出版发行。至今，本书的英文版已售出3500多本。     

EDA业界一大举动—Synopsys与Viewlogic宣布合并

Synopsys公司和Viewlogic Systems公司宣布了一项正式合并协议。根据此项协议,为迅速增长的计算机、通信和消费类电子市场而开发的单片系统(SOC)设计所需的一系列关键技术,将紧密结合在一起,大大增强了Synopsys公司在高层次设计和单片系统设计领域的先导地位。Synopsys和Viewlogic的合并是电子设计自动化(EDA)历史上的一次最大的合并。     

Synopsys成为InteI首要EDA供应商的原因初探

近日，Synopsys公司宣布该公司已被选定为Intel公司的主要EDA供应商。作为这桩交易的一部分，两家公司签署了一份为期多年的技术协议，按照这份协议，他们将在先进的设计流程方面进行密切合作。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.