Characterization of liquid crystal polymer for high frequency system-in-a-package applications

Liquid crystal polymer (LCP) is a promising substrate for electronics packaging. In this paper, the high frequency characteristics of LCP were investigated using a microstrip ring resonator to verify the possibility of applying the material in RF packaging. The relative dielectric constant and the loss tangent have been measured. The radiation loss of the ring is considered to accurately determine the loss tangent. A GaAs MMIC switch circuit was fabricated using LCP as substrate to demonstrate the application of this material for system-in-a-package. From the high frequency measurements, it is shown that LCP has low dielectric constant and low loss tangent in the frequency range from 1 GHz to 35 GHz. It is also found that LCP can be used in system-in-a-package applications.     

Miniaturised broadband on-chip transformer employing PPGM on MMIC for application to low impedance transformation

Using a microstrip line employing periodically perforated ground metal (PPGM) on a GaAs monolithic microwave integrated circuit (MMIC), a highly miniaturised and broadband impedance transformer was developed for application to low impedance matching in broadband. Its size was 0.132 mm/sup 2/ on GaAs substrate, which was 2.3% of the one fabricated by a conventional microstrip line. The transformer showed good RF performance over a broadband including ultra-wideband. This is the first report of an on-chip broadband impedance transformer fabricated on MMIC.     

The evolution of packages for monolithic microwave andmillimeter-wave circuits

The maturing of monolithic microwave integrated circuit (MMIC) technology has spawned a variety of new military and commercial applications. As-a result, there is an increased emphasis on the packaging of MMIC chips and MMIC-based components. Currently, the industry is applying a number of new assembly and packaging technologies to RF components and subsystems driven by the forces of performance, size and weight, and cost. This paper outlines the current evolution in microwave and millimeter-wave packaging using examples drawn from the area of active array antennas     

Novel microcontacts in microwave chip carriers developed by UV-LIGA process

Design and development of novel type microcontacts in monolithic microwave integrated circuit (MMIC) chip-carriers to printed circuit board (PCB) assembly are presented in this paper. Several new concepts of microcontacts for packaging solutions of microwave and millimeter-wave MMIC are depicted. Simulation and vector network analyzer (VNA) measurement results for these microcontact transitions are discussed and conclusions for the optimal dimensions are made. Equivalent electrical circuits are extracted from the measured S-parameter data. The results show that the electrical parameters are highly dependent on the transition dimensions and substrate features. These contacts are based on male stud (bump) and female ring concept. When mating each other, there are clips effect and self-alignment features. Finally, the article discusses the technological implementation of the proposed new microcontact stud-ring through a low-cost ultraviolet electroplating, lithography, and molding (UV-LIGA) process.     

Design Considerations for Traveling-Wave Single-Pole Multithrow MMIC Switch Using Fully Distributed FET

The circuit design considerations for the traveling-wave switch (TWSW) single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) utilizing a fully distributed FET (FD-FET) are presented here for the first time. The normalized length of the impedance transformer for a single-pole multithrow TWSW using the FD-FET is found to be less than a quarter-wavelength at the operating frequency. Unlike the TWSW using lumped FETs, the TWSW with the FD-FET offers the advantage of no design limits regarding such frequency characteristics as bandwidth and group delay. The newly developed SPDT TWSW MMIC using the 400-mum-gate finger FD-FET delivers broadband characteristics over more than an octave frequency range with highly reliable MMIC technology. The newly developed SPDT MMIC switch provides low insertion loss of less than 2.1 dB and high isolation of over 25.5 dB from 38 to 80 GHz, coupled with the benefit of very small size     

Novel microcontacts in microwave chip carriers developed by UV-liga process part II

This paper presents the design and development of novel type microcontacts in monolithic microwave integrated circuit (MMIC) chip-carriers to printed circuit board (PCB) assembly. Several new concepts of microcontacts for packaging solutions of microwave and millimeter-wave MMIC are depicted. Simulation and vector network analyzer (VNA) measurement results for these microcontact transitions are discussed. The results show that the electrical parameters are highly dependent on the transition dimensions and substrate features. These contacts are based on male stud (bump) and female (ring) concept. When mating each other, there are clips effect and self-alignment features. Special attention is paid to the shape of the microcontacts in order to facilitate assembly and strengthen the connection. Equivalent electrical circuit is proposed for PSPICE simulation of the dc contact resistance. Finally, the article discusses the technological implementation of the proposed new microcontact stud-ring through low-cost ultraviolet electroplating, lithography, and molding (UV-LIGA) process and the regime influence on the shape, geometry, and mating capabilities. Results from mechanical pull and adhesion tests are also discussed.     

小型化AGC模块研制北大核心CSCD

AGC(Automatic Gain Control)模块应用于卫星无线通信系统中,实现中频信号放大以及自动增益控制功能,具有增益高、动态范围大的特点。随着系统小型化需求日益迫切,必须在保持性能和可靠性指标的基础上推进AGC模块小型化。文中首先采用单片电路技术改造混合集成工艺的单元电路,利用E-pHEMT(增强型高电子迁移率晶体管)单片工艺设计了一款电调衰减器及放大器芯片,使单元电路的面积分别缩减至0.9 mm×0.9 mm和0.4 mm×0.6 mm,仅为原单元电路的1/30。通过单元电路与整体电路联合设计优化,在保证整体电路性能的基础上,简化了电路结构,减少了6个元器件。在芯片化改造的基础上,进一步小型化整体电路,使整体电路体积减小了18%。通过上述系列措施,最终将电路体积缩小至18 mm×15 mm×3.5 mm,仅为原电路的1/3且增益和遥测电压性能指标进一步提升。     

S-N transition of HIGH-Tc superconducting ring caused by induced current

The experimental investigation results of superconducting-normal state transitions in a high-T_c superconducting ring with induced current are presented. A transformer device is used, where the superconducting ring forms a secondary winding of a transformer. Using the analysis method based on an equivalent circuit of the transformer, the voltage and current in the ring vs time are obtained from oscilloscope traces of the voltage and current in the primary winding of the device. The dynamic voltage-current characteristic of the ring is found to have a hysteresis. This hysteresis is explained by the inertia of thermal processes and propagation of a resistive zone in the ring.     

基于树脂封装的三维微波组件热布局研究

采用树脂封装三维微波组件是微波组件小型化、轻量化发展的一个趋势.介绍了基于树脂封装的三维组件基本结构,通过有限元热仿真分析方法,得出了大功率微波芯片(MMIC)在树脂封装中的位置布局原则.     

A CAD-suitable approach for the analysis of nonuniform MMIC andMHMIC transmission lines

A new method of moment-based formulation for the solution of the telegraphist's equations in nonuniform transmission lines is presented. Entire domain basis functions that build in a frequency variation are used to cover wider frequency and physical dimension ranges. The results obtained using the proposed formulation are validated by comparison to those obtained by a CAD package and to measured data. Different nonuniform lines in microstrip and coplanar technologies on monolithic microwave/millimeter wave integrated circuit (MMIC) and miniaturized hybrid microwave integrated circuit (MHMIC) substrates are investigated with an application to the design a matched taper transition in a MMIC coplanar line     

Hybrid ring coupler for W-band MMIC applications using MEMS technology

The hybrid ring coupler was designed and fabricated on a GaAs substrate using surface micromachining techniques, which adopted dielectric-supported air-gapped microstrip line (DAML) structure. The fabrication process of DAML is compatible with the standard monolithic microwave integrated circuit (MMIC) techniques, and the hybrid ring coupler can be simply integrated into a plane-structural MMIC. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of 3.57 /spl plusmn/ 0.22dB and the transmission loss of 3.80 /spl plusmn/ 0.08dB across the measured frequency range of 85 to 105GHz. The isolation characteristics and output phase differences are -34dB and 180/spl plusmn/1/spl deg/, at 94GHz, respectively.     

Highly integrated three-dimensional MMIC technology applied tonovel masterslice GaAs- and Si-MMICs

A novel three-dimensional (3-D) masterslice monolithic microwave integrated circuit (MMIC) is presented that significantly reduces turnaround time and cost for multifunction MMIC production. This MMIC incorporates an artificial ground metal for effective selection of master array elements on the wafer surface, resulting in various MMIC implementations on a master-arrayed footprint in association with thin polyimide and metal layers over it. Additionally, the 3-D miniature circuit components of less than 0.4 mm² in size provide a very high integration level. To clearly show the advantages, a 20-GHz-band receiver MMIC was implemented on a master array with 6×3 array units including a total of 36 MESFETs in a 1.78×1.78 mm area. Details of the miniature circuit components and the design, closely related to the fabrication process, are also presented. The receiver MMIC exhibited a 19-dB conversion gain with an associated 6.5-dB noise figure from 17 to 24 GHz and an integration level four times higher than conventional planar MMICs. This technology promises about a 90% cost reduction for MMIC because it can be similarly applied to large-scale Si wafers with the aid of an artificial ground     

Electromagnetic design aspects of packages for monolithic microwaveintegrated circuit-based arrays with integrated antenna elements

Reliable and cost-effective packaging of monolithic microwave integrated circuits (MMICs) is an important aspect of the design of phased array systems. At millimeter wavelengths, where small dimensions make machining and assembly a complex matter, the interconnections between the modules housing the MMIC components and the antenna elements are a source of unreliability as well as a potential problem in terms of electromagnetic losses. One solution involves the integration of antenna elements onto the MMIC chips. The paper addresses the issues involved in packaging and housing MMIC chips with integrated antenna elements and presents some insights into the electromagnetic design of such packages     

有源电子式电流互感器高压侧电源的研究

电流互感器是电力系统中的重要设备,介绍一种适用于有源电子式电流互感器的悬浮式直流电源的设计原理。提出一种用补偿线圈和充电电池相结合的方法对母线电流取能方式进行改进的新方案,使电源在更宽的一次侧电流动态范围内满足电子式电流互感器对电源的要求。实验结果表明,该电源能够满足高压侧电子电路的供能要求。该方法是目前解决有源电子电流互感器高压侧电源问题的有效方法之一。     

MMIC 14-GHz VCO and Miller Frequency Divider for Low-Noise Local Oscillators

An MMIC voltage-controlled oscillator and an MMIC frequency divider are developed and applied to a 14-GHz low-noise local oscillator. To obtain both wide tuning range and low pulling figure, the source-follower FET circuit is used in the voltage-controlled oscillator. A wide-band balanced mixer and a filtering amplifier are integrated in a single chip and constitute the Miller frequency divider. -The MMIC's were assembled into a 14-GHz phase-locked loop in order to demonstrate that they will operate as key components of low-noise oscillators. It is shown experimentally that even for low-Q MMIC circuitry, the carrier noise of the oscillator is reduced enough for practical purposes such as space-borne heterodyne receivers, transmitters, and radio repeaters in Ku-band satellite communication systems. Thus, prospects are bright for development of single-chip microwave low-noise oscillators.     

Resonance Properties of Ring Circuits

The ring guide or ring circuit, a microwave device consisting of a waveguide having the ends connected to form an annular ring, has properties similar to those of ordinary resonant cavities. Wave propagation within the ring guide, its interaction with a waveguide to which it is coupled, and its resonant circuit properties are investigated in this report. The properties of a prototype circuit consisting of a ring guide of rectangular cross section were found to agree with theory.     

一种低噪声SiGe微波单片放大电路

介绍了一种利用SiGe技术制作的低噪声SiGe微波单片放大电路(MMIC)。该电路以达林顿结构的形式级联,由两个异质结双极型晶体管(HBT)和4个电阻组成;HBT采用准自对准结构,其SiGe基区为非选择性外延。在1 GHz频率下,电路噪声为1.59 dB,功率增益为14.3 dB,输入驻波比为1.6,输出驻波比为2.0。     

Rosen型压电变压器反接降压特性研究

介绍了一种将Rosen型压电变压器反接从而实现降压的方法。从压电变压器的材料参数出发,导出Rosen型压电变压器反接时的等效电路模型。基于此模型,利用MATLAB仿真,得到电压增益、效率、输出功率等特性曲线,预测了在满足较高效率前提下,负载匹配时可实现降压。测试了电压增益的频率特性,测得降压特性与理论计算基本一致,表明将Rosen型压电变压器反接在一定负载范围内可实现降压功能。     

A 1-17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching networks

An InGaP-GaAs heterojunction bipolar transistor (HBT) analog multiplier/mixer monolithic microwave integrated circuit (MMIC) is developed that adopts a Gilbert-cell multiplier with broad-band input-matching networks to widen the bandwidth up to 17 GHz. This MMIC was fabricated using a commercially available 6-in InGaP-GaAs HBT MMIC process. It achieved a measured sensitivity of above 1100 V/W for an analog multiplier and a conversion gain of better than 9 dB for a mixer. It also demonstrated a lower corner frequency and noise than that of an InP HBT analog multiplier. The measured low-frequency noise was 10 nV/sqrt(Hz), which is about half of that of an InP HBT analog multiplier with a similar architecture. The corner frequency of the low-frequency noise was roughly estimated to be 15 kHz. The measured performance of this MMIC chip with gain-bandwidth-product (GBP) of 47 GHz rivals that of the reported GaAs-based analog multipliers and mixers. The high GBP result achieved by this chip is attributed to the HBT device performance and the broad-band input-matching network.     

The flip-chip bump interconnection for millimeter-wave GaAs MMIC

The flip-chip bump interconnection structure has become popular for microwave and millimeter-wave package applications. This structure is expected to provide higher performance and a low cost packaging method. This paper presents the results of an evaluation of flip-chip assembled radio frequency (RF) devices. A coplaner transmission line type GaAs monolithic microwave integrated circuit (MMIC) was mounted on an aluminum oxide (Al₂O₃) substrate using the flip-chip thermal compression method. The electrical performance (S-parameter and noise figure) was measured and the reliability of the interconnection was tested. The changing rate of the characteristic impedance (Zo) of transmission line on bare-chip caused by bare-chip surface proximity to a substrate was simulated by finite element method (FEM) analysis. Flip-chip bonding conditions were fixed to keep the gap that less than 1% of Zo changing rate and sufficient bonding strength for reliability of interconnection. The DC characteristics of a 30 GHz, 60 GHz and 77 GHz band low noise amplifier (LNA) were the same before and after mounting, and the RF performance of the assembled MMIC was the same as the bare-chip without packaging. However, the influence of underfilling was observed. When epoxy resin was injected into the gap between the bare-chip and the substrate, the frequency band of the MMIC shifted to the low side. The reliability of the bump interconnection was excellent. The interconnection resistance did not change in a temperature cycle (-55°C to +125°C until 1500 cycle) test