场发射显示器中双层基板结构的数值分析

分析了场发射显示器(FED)中玻璃基板在大气压力下的形变和应力与玻璃基板厚度的关系,得到基板形变和应力随着其厚度的减少而急剧增大。通过研究玻璃基板表面粗糙度及其形变对于器件内部场强及碳纳米管发射电流密度的影响,得出为了保证95%以上的发射电流均匀度,低压型和高压型FED的阴极基板表面粗糙度均应在1μm以内,而阳极基板最大形变分别不超过10μm和40μm。在上述研究的基础上,提出了双层基板结构,其引入改善了FED内表面的粗糙度,同时使得12.7 cm(5 in)以下尺寸的FED屏中取消了支撑。文中还讨论了对于大尺寸屏幕的支撑配置方法。分析结果表明,双层基板结构对于改善发射均匀性和优化支撑体配置具有良好效果。     

电泳法制备平栅极碳纳米管场发射阴极及场发射特性研究

采用电泳法在ITO玻璃基板上选择性制备了碳纳米管(CNTs)阴极薄膜,采用电子扫描(SEM)分析了CNTs薄膜的表面形貌,并测试了碳纳米管阴极的场致发射特性.结果表明,利用电泳法制得的碳纳米管阴极薄膜均匀性、致密性良好,且具有较大发射电流密度;通过控制共面栅控CNTs场发射阴极的栅极电位能够有效控制阴极的场发射电流密度...     

碳纳米管阴极平板显示器的工艺研究

碳纳米管场致发射显示器是一种新型的真空器件，也是一种具有巨大应用潜力的平板型显示设备。本文详细地介绍了碳纳米管场致发射原理，给出了碳纳米管阴极平板显示器的基本结构和工作原理，对于显示器件的真空封装，碳纳米管阴极装配，控制栅极制作等工艺问题进行了阐述和研究。采用这些技术，已经研制出了碳纳米管阴极场致发射显示器的样品。     

场致发射显示器基板形变分析

采用表面效应单元施加表面载荷的方法来研究场发射显示器基板支撑系统.预先设定基板承受力,以基板的面积、厚度为参数来进行模拟,利用ANSYS有限元分析软件建立基板模型,采用二维模型和三维施加表面载荷的方法,进行模拟仿真,得出基板形变、应力与基板厚度、面积的关系,为支撑墙的排列优化提供理论参考.     

超薄荫罩式PDP放电单元玻璃基板形变分析

超薄荫罩式PDP是在传统的荫罩式PDP结构的基础上提出的一种新型结构.它采用超薄玻璃作为前、后玻璃基板代替原来的玻璃基板,使重量减轻、厚度减薄,并且以超薄玻璃本身充当介质层,使得结构更加简单.用ANSYS软件模拟超薄玻璃作为前后玻璃基板及介质层,其形变受玻璃厚度、放电单元开口面积、玻璃的材料等因素的影响情况.研究结果为超薄荫罩式PDP的设计提供理论依据.     

三级碳纳米管场发射显示屏的制作研究

利用碳纳米管作为阴极材料的场致发射显示屏是一种新型的平板器件。介绍了三极结构碳纳米管场致发射显示屏的工作原理，基本结构以及寻址方式。重点讨论了在制作器件方面所存在的真空封装问题，荧光粉制作问题以及绝缘隔离层问题，在提出一种新型结构栅极制作工艺的基础上，成功地制作了三极碳纳米管场发射显示屏器件。     

基于FCBGA封装应用的有机基板翘曲研究

有机基板作为IC封装的重要载体,其制造材料的特性对封装工艺的稳定性及可靠性有重要影响。针对倒装芯片球栅阵列（FCBGA）有机基板在再流焊过程中的翘曲问题,使用热形变测试仪研究了不同尺寸和芯板厚度的有机基板在再流焊过程中的共面性及形变情况,研究FCBGA有机基板的翘曲行为。针对大尺寸FCBGA有机基板在再流焊过程中的翘曲问题,从脱湿、夹持载具以及再流焊曲线优化等方面提出改善措施,为FCBGA有机基板的封装应用提供参考。     

新型三极碳纳米管场发射器件的研究

采用催化剂高温分解方法制备了碳纳米管薄膜阴极。利用优质云母板作为绝缘材料．结合简单的丝网印刷工艺制作了新型的栅极结构。详细地给出了新型三极碳纳米管场发射器件的制作工艺．对场致发射的机理进行了初步的讨论。采用这种新型的栅极结构．不仅极大地降低了总体器件成本．同时避免了碳纳米管薄膜阴极的损伤．提高了器件的制作成功率。所制作的三极结构平板场发射器件具有良好的场致发射特性和栅极控制能力。     

采用等离子CVD制作大面积FED用垂直定向的碳纳米管

1．前言 碳纳米管（CNT）直径小而细长，并且有很强的机械韧性，因此，被看作是很有希望的场电子发射式显示器（FED）用电子发射源材料。对FED已采用CNT做过试制，但多数情况下是把制作的CNT混合在溶液中，涂复后做定向处理，据称这种方法很难使CNT的密度做得均匀。另外，最近又尝试了利用热CVD（化学气相生长法）在基板上直接使CNT定向生长，并原封不动地将其作为显示器的电子源。     

三极碳纳米管场发射显示屏的制作研究

利用碳纳米管作为阴极材料的场致发射显示屏是一种新型的平板器件。介绍了三极结构碳纳米管场致发射显示屏的工作原理,基本结构以及寻址方式。重点讨论了在制作器件方面所存在的真空封装问题,荧光粉制作问题以及绝缘隔离层问题。在提出一种新型结构栅极制作工艺的基础上,成功地制作了三极碳纳米管场发射显示屏器件。     

Realization of dielectric loaded waveguide filter with substrate integrated waveguide technique based on incorporation of two substrates with different relative permittivity

In this paper a new structure based on substrate integrated waveguide (SIW), called incorporated substrate integrated waveguide (ISIW), has been used to implement the dielectric loaded waveguide filter in planar structure. Conventional waveguide filter and dielectric loaded waveguide filter have been realized with SIW and ISIW technique, respectively. The use of ISIW structure has reduced the size of the filter, required precision in designing process and the cost of manufacturing process, at the cost of increasing the losses. Thus, while the size of filter and the cost of manufacturing process reduce significantly, there is no need to build the particular dielectric material as resonator and integration with other microstrip devices will be much easier too. Two different excitation mechanism have been considered to cancel the spurious response in the desired frequency band. The SIW and ISIW filters have been fabricated and fairly compared with waveguide filters. Advantages and disadvantages of ISIW structure have been scrutinized in detail. Good agreement between the simulated and measured frequency response of proposed filters has been shown.     

Cross-Section Preparation for Solder Joints and MEMS Device Using Argon Ion Beam Milling

Mechanical cross-section polishing has traditionally been the method of choice for preparing samples to be examined by scanning electron microscopy (SEM). Although mechanical polishing, allied to selective chemical etching can reveal the most important characteristics of solder joint microstructure, subtle details may be lost. A relatively new cross section polishing method has been developed using an argon ion beam to prepare a flat surface with potentially less sample damage. In this study we compare these two methods of cross section polishing for solder-substrate couples, and for delicate MEMS type structures. Four solder samples were prepared, consisting of SAC (Sn-Ag-Cu) solder, SAC solder on copper substrate, SAC solder on nickel substrate and In-Sn solder on niobium substrate. SEM was used to examine the polished samples and it was found that features such as the internal structure of intermetallic compounds (IMCs) was more readily identified using the new technique. The ion beam milling technique was also found to be more suitable for simultaneous observation of multiple aspects of microstructure (e.g., identification of IMCs in relation to grain boundaries, substrate crystal structure or the eutectic solder structure). The MEMS device cross-sections could only be prepared by the ion beam method as mechanical polishing caused too much damage.     

脉冲激光冲击LD31薄板变形的实验和数值模拟

激光冲击板料变形是利用高能脉冲激光和材料相互作用诱导的高幅冲击波的力效应使板料产生塑性变形的新技术 ,本文利用Nd :Glass脉冲激光对厚度为 0 .8mm的LD31薄板进行激光冲击变形实验。所用激光参数为 :脉冲能量 15～ 30J,脉冲宽度 2 5ns ,光斑直径Φ8mm。利用ABAQUS软件对激光冲击下板料的变形过程进行了数值模拟 ,建立了激光冲击波加载的数学模型 ,探索激光冲击的主要参数和板料变形之间的相互关系 ,为激光冲击变形工艺参数的优化、板料变形的理论分析 ,实现大面积金属板料的柔性激光冲压成形提供依据。     

Frequency/stress sensitivity of s.a.w. resonators

Surface-acoustic-wave resonators can be used as stress sensors for measuring force and pressure. Experiments at 160 MHz using rotated y-cut substrates indicate that larger linear changes in resonator frequency can be obtained by deforming the substrate. The s.a.w. transducers, besides being small in size, are also stable in frequency.     

新型雷达高度表用声表面波调频信号产生器

介绍以ＬｉＮｂＯ３为基片，产生中频７０ＭＨｚ的声表面波宽带线性调频信号器件的设计及原理，在声表面波器件设计中采用了倾斜色散换能器结构，成功地制作出了相对带宽超过７０％的线性调频信号产生器。该信号产生器用于一种新型雷达高度表，试验结果令人满意     

Methods for noise isolation in RFCMOS ICs

Different process techniques of suppressing the transmission of high-frequency noise induced by fast-switching MOS gates through silicon (Si) substrate have been examined. The isolated n/sup +/-pocket structure formed by a new process technique designed in this work has proven to be most effective in guarding vulnerable devices from remnant high-frequency noise roaming in the substrate among the structures we have used in the experiment: p/sup +/ guard ring, proton implant, and pocket structures. The noise suppressing efficiency is -75 dB at 1 GHz of n/sup +/-pocket structure in contrast to -38 dB at 1 GHz of unprotected devices. The protecting structures should become a decisive measure for future success of Si-based radio frequency integrated circuit (RFIC) applications.     

脉冲激光冲击LY12CZ铝合金成形的实验和数值模拟

激光冲击板料变形是利用高能脉冲激光和材料相互作用诱导的高幅冲击波的力效应使板料产生塑性变形的新技术。本文利用钕玻璃强激光对厚度为1,2mm的LY12CZ铝合金板料进行了激光单点冲击成形的实验。利用ABAQUS软件对激光单点冲击成形过程进行了数值模拟,探讨了激光冲击次数和板料成形之间的关系,得出它们之间的关系曲线,为激光多点冲击成形奠定了基础,以及为实现板料复杂形状的激光冲击成形提供理论依据。     

An efficient two-dimensional model for CMOS latchup analysis

A general structure-oriented model has been specially designed to estimate the substrate spreading resistance of a parasitic SCR latchup path in a CMOS structure, which can handle CMOS structures with normal and reverse layouts in the substrate, with top and back substrate contacts, and with an epitaxial layer in the substrate. The simplified 2D numerical analysis based on solving the Laplace equation has been carried out and used to quantitatively evaluate the substrate spreading resistance of a parasitic SCR latchup path. Based on the calculated substrate spreading and well resistances, the holding voltage and holding current as well as the triggering current have been calculated and compared with the experimental measurements. Moreover, the predicted holding voltage value is shown to be nearly identical to that obtained using the full 2D numerical analysis for a specified CMOS latchup path. In addition, the developed model has been thoroughly applied to evaluate a variety of the CMOS structures and close correlations between the predicted results and the reported latchup experiments are quite encouraging. Furthermore, a latchup-free CMOS structure predicted by the developed model has been shown to be consistent with some experimentally verified latchup-free structures published in the literature.     

高阻抗电磁表面及其在真空电子器件中的应用

近十年来,一种新型的高电磁阻抗表面得到迅速发展。这种高电磁阻抗表面实际上是一种新的电磁结构——光子带隙晶体结构。在频率禁带,这种结构的表面具有很高的电磁阻抗。利用这种特性,可以构建一种平面型行波管。这种行波管采用曲折线作互作用慢波电路。为了减小电磁波传输损耗,曲折线放置在高电磁阻抗表面上。本文对高电磁阻抗表面的特性和这种平面型行波管的工作原理进行了讨论。     

Extensive electrical and thermal characterization of an MCM-Dtechnology

In this paper, it is shown the work carried out on thermal characterization of the main materials employed in the deposited-type multichip module (MCM-D) technology. In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique. The substrates can be either passive with interconnection lines, Rs, Cs, and Ls or active with complementary metal oxide semiconductor (CMOS) technology cells. The metals used in this technology are aluminum for interconnection purposes, tantalum silicide for making resistors and a multilayer of wettable metal for solder connection. Measurements of sheet resistance and contact resistance versus temperature in the range of -28°C to 100°C of the metals used in the technology are shown. A set of classic test structures such as Kelvin contacts, cross bridge resistors (CBR), and Van der Pauw structures have been used for this purpose as well as a new Kelvin-like structure to test the contact resistance of the Flip Chip connection through the ball. This structure has been proven to be very sensitive allowing the measurement of changes in ball resistance in the range of mΩ. A thermal model of the MCM package has been obtained, taking into account all the thermal resistances added by this kind of package