共查询到19条相似文献,搜索用时 171 毫秒
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设计了一种新结构InP/InGaAs/InP双异质结双极晶体管(DHBT),在集电区与基区之间插入n+-InP层,以降低集电结的导带势垒尖峰,克服电流阻挡效应.采用基于热场发射和连续性方程的发射透射模型,计算了n+-InP插入层掺杂浓度和厚度对InP/InGaAs/InP DHBT集电结导带有效势垒高度和I-V特性的影响.结果表明,当n+-InP插入层掺杂浓度为3×1019cm-3、厚度为3nm时,可以获得较好的器件特性.采用气态源分子束外延(GSMBE)技术成功地生长出InP/InGaAs/InP DHBT结构材料.器件研制结果表明,所设计的DHBT材料结构能有效降低集电结的导带势垒尖峰,显著改善器件的输出特性. 相似文献
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带有复合掺杂层集电区的InP/InGaAs/InP DHBT直流特性分析 总被引:1,自引:0,他引:1
设计了一种新结构InP/InGaAs/InP双异质结双极晶体管(DHBT),在集电区与基区之间插入n -InP层,以降低集电结的导带势垒尖峰,克服电流阻挡效应.采用基于热场发射和连续性方程的发射透射模型,计算了n -InP插入层掺杂浓度和厚度对InP/InGaAs/InP DHBT集电结导带有效势垒高度和I-V特性的影响.结果表明,当n -InP插入层掺杂浓度为3×1019cm-3、厚度为3nm时,可以获得较好的器件特性.采用气态源分子束外延(GSMBE)技术成功地生长出InP/InGaAs/InP DHBT结构材料.器件研制结果表明,所设计的DHBT材料结构能有效降低集电结的导带势垒尖峰,显著改善器件的输出特性. 相似文献
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采用国产的4H-SiC外延材料和自行开发的SiC双极晶体管的工艺技术,实现了4H-SiC npn双极晶体管特性。为避免二次外延或高温离子p+注入等操作,外延形成n+/p+/p/n-结构材料,然后根据版图设计进行相应的刻蚀,形成双台面结构。为保证p型基区能实现良好的欧姆接触,外延时在n+层和p层中间插入适当高掺杂的p+层外延,但也使双极晶体管发射效率降低,电流放大系数降低。为提高器件的击穿电压,在尽量实现低损伤刻蚀时,采用牺牲氧化等技术减少表面损伤及粗糙度,避免表面态及尖端电场集中,并利用SiC能形成稳定氧化层的优势来形成钝化保护。器件的集电结反向击穿电压达200 V,集电结在100 V下的反向截止漏电流小于0.05 mA,共发射极电流放大系数约为3。 相似文献
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艾立 《固体电子学研究与进展》2008,28(1):138-141
设计并生长了一种新的InP/InGaAs/InP DHBT结构材料,采用在基区和集电区之间插入两层不同禁带宽度的InGaAsP四元系材料的阶梯缓变集电结结构,以解决InP/InGaAs/InP DHBT集电结导带尖峰的电子阻挡效应问题。采用气态源分子束外延(GSMBE)技术,通过优化生长条件,获得了高质量的InP、InGaAs以及与InP晶格相匹配的不同禁带宽度的InGaAsP外延材料。在此基础上,成功地生长出带有阶梯缓变集电区结构的InP基DHBT结构材料。 相似文献
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采用窄禁带宽度材料GaAsSb作为异质结晶体管的基区材料,成功研制出了能有效降低电路工作电压和功率损耗的低开启电压的NPN InGaP/GaAsSb/GaAs双异质结晶体管(double heterojunction bipolar transistor,DHBT).器件性能如下:BE结的正向开启电压(turn-on voltage)仅为0.73V;当IB=1μA/step时,直流增益达到了100,BVCEO=5~6V.通过对基区不同Sb含量器件的比较得到,器件的直流特性与基区Sb的含量有关. 相似文献
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InGaP/GaAs异质结双极晶体管(HBT)是当前微波毫米波领域中具有广阔发展前景的高速固态器件,其直流特性是器件重要参数之一.本文采用Medici软件对两种InGaP/GaAs外延结构HBT的直流特性和高频特性进行了模拟计算,并实际制备出了两种材料结构的大尺寸(发射极面积100μm×100μm)双台面InGaP/GaAs HBT器件,对其直流特性进行了测试和分析,两种外延结构的器件共射直流增益分别为50和350,模拟得其最大截止频率分别为8和10GHz. 相似文献
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A novel InGaP/GaAs0.92Sb0.08/GaAs double heterojunction bipolar transistor (DHBT) with low turn-on voltage has been fabricated. The turn-on voltage of the DHBT is typically 150 mV lower than that of the conventional InGaP/GaAs HBT, indicating that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs. A current gain of 50 has been obtained for the InGaP/GaAs0.92Sb0.08/GaAs DHBT. The results show that InGaP/GaAsSb/GaAs DHBTs have a great potential for reducing operating voltage and power dissipation 相似文献
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Double-heterojunction bipolar transistors (DHBT) can exhibit a large collector/emitter offset voltage at zero collector current which will adversely affect digital switching circuits. It is shown that this effect results from insufficient grading at the base/collector heterojunction. A GaAlAs/GaAs DHBT grown by MBE having a 130 ? compositional grading at the emitter/base and base/collector junction showed no sign of the collector/emitter offset voltage. 相似文献
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《Microelectronics Journal》2007,38(6-7):750-753
A novel InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with InGaAs/GaAs superlattice-base structure is proposed and demonstrated by two-dimensional analysis. As compared with the traditional HEBT, the studied superlattice-base device exhibits a higher collector current, a higher current gain of 246, and a lower base–emitter (B–E) turn-on voltage of 0.966 V at a current level of 1 μA, attributed to the increased charge storage of minority carriers in the InGaAs/GaAs superlattice-base region by tunneling behavior. The low turn-on voltage can reduce the operating voltage and collector–emitter offset voltage for low power consumption in circuit applications. 相似文献
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DeLuca P.M. Lutz C.R. Welser R.E. Chi T.Y. Huang E.K. Welty R.J. Asbeck P.M. 《Electron Device Letters, IEEE》2002,23(10):582-584
InGaP/GaInAsN double heterojunction bipolar transistors (HBTs) with compositionally graded bases are presented which exhibit superior dc and radio frequency performance. Reducing the average base layer energy gap and optimizing the emitter-base (e-b) and base-collector (b-c) heterojunctions leads to a 100-mV reduction in the turn-on voltage compared to a baseline InGaP/GaAs process. Simultaneously grading the base layer energy band-gap results in over a 66% improvement in the dc current gain and up to a 35% increase in the unity gain cutoff frequency. DC current gains as high as 250 and cutoff frequencies of 70 GHz are demonstrated. In addition, the InGaP/GaInAsN DHBT structure significantly reduces the common emitter offset and knee voltages, as well as improves the dc current gain temperature stability relative to standard InGaP/GaAs HBTs. 相似文献
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Ahmari D.A. Fresina M.T. Hartmann Q.J. Barlage D.W. Mares P.J. Feng M. Stillman G.E. 《Electron Device Letters, IEEE》1996,17(5):226-228
A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded InxGa1-xAs base has been demonstrated with fT=83 GHz and fmax=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high fmax results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications 相似文献