Fabrication of YBCO films on Ag substrate by TFA-MOD method

Biaxial aligned YBCO films have been successfully deposited on Ag { 110 } (110) textured polycrystalline substrates by metal-organic decomposition (MOD) method using Trifluoroacetate Salt (TFA). The influence of firing temperature and Ag surface defects on phase purity and texture, surface morphology of YBCO films was studied. Holding temperature at 900℃ for 30 rain benefits to improve orientation and connectivity of YBCO films. The surface of YBCO films deposited on unpolished Ag substrate has many holes and stripes, which are parallel to the rolling stripe on Ag substrates. To eliminate the rolling stripe on the Ag surface, Ag substrates were polished prior to films deposition. The film grown on polished Ag substrates has a smooth surface and good connectivity of grains without parallel stripes. The YBCO films have an onset of transition around 90K and critical current densities of 15000 A/cm^2.     

温度对TFA-MOD制备YBCO薄膜的影响

采用TFA-MOD方法在YSZ单晶基底上制备YBCO薄膜,主要研究高温热处理阶段温度对薄膜微结构和超导电性的影响。采用X射线衍射和扫描电镜分别对相组成与形貌进行分析。结果显示在800～830℃之间,能够获得纯的YBCO相,同时随着晶化温度的降低,薄膜面内a轴晶粒减少,有利于薄膜超导电性的改善。     

甲烷体积分数对纳米金刚石薄膜形貌的影响

目的研究不同甲烷体积分数对纳米金刚石(NCD)薄膜生长的影响,实现较小晶粒尺寸、高平整度的NCD薄膜的制备。方法采用微波等离子体增强化学气相沉积的方法制备NCD薄膜,以CH4/H2为气源,在生长阶段控制其他条件不变的前提下,探讨不同甲烷体积分数对NCD晶粒尺寸、表面形貌以及表面粗糙度的影响。采用SEM、XRD等观测NCD薄膜的表面形貌和晶粒尺寸大小,并利用Raman对NCD薄膜的不同散射峰进行分析。结果随着甲烷体积分数的增加,薄膜晶粒尺寸有减小的趋势。甲烷体积分数较低时,晶形比较完整,但致密度较小;甲烷体积分数较高时,晶形杂乱无章,但致密度较好。当甲烷体积分数为9%时NCD薄膜平均粒径达到最小,为21.3 nm,表面粗糙度较好,但非晶金刚石成分开始大量生成,NCD薄膜质量开始变差;当甲烷体积分数为8%时其形貌最好,且此时最小表面粗糙度小于20 nm。通过Raman分析可知NCD薄膜中出现了硅峰和石墨烯特征峰。结论甲烷体积分数对NCD薄膜形貌有较大影响,甲烷体积分数为8%时是表面平整度由较差变好再逐渐变差的分界点,且平均晶粒尺寸为23.6 nm,薄膜表面具有较好的平整度。     

Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu（tmhd）2 concentration简

Metal–organic chemical vapor deposition was applied to fabricate YBa2 Cu3 O7-d(YBCO) films on singlecrystal LaAlO3(001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction(XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the inplane texture. Scanning electron microscope(SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer(EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density(Jc) of 4.0 MA cm-2(77 K, 0 T).     

基片斜切角度对YBCO薄膜微观结构及超导电性能的影响

研究基片斜切角度对YBCO薄膜微观结构及超导电性能的影响。采用脉冲激光沉积（PLD）法在0°～6°斜切（001）SrTiO3基片上制备了具有c取向的YBCO薄膜。用XRD和TEM对薄膜微观结构进行了分析，用标准四引线法测定薄膜电阻．温度关系，从而确定薄膜的超导电性能。结果表明，随斜切角度的增大，薄膜晶体质量下降，晶格弯曲畸变程度增大，超导临界转变温度降低，转变宽度增大。     

Effect of solution concentration on splat formation and coating microstructure using the solution precursor plasma spray process

The Solution Precursor Plasma Spray (SPPS) process had been successfully used to deposit 7YSZ thermal barrier coatings. In this research, the effects of solution precursor concentration on 7YSZ splat formation and coating microstructure are studied. With increasing solution concentration, solution viscosity increases and surface tension decreases. Solution concentration has no effect on precursor pyrolysis and crystallization temperatures. The average atomized droplets size of ∼ 35 μm is the same for low and high concentration solutions. By contrast, splat formation is greatly dependent on precursor concentration. Low concentration precursors experience surface precipitation and lead to shell formation. The deposits consist of semi-pyrolyzed material and result in a soft, porous coating. When the substrate temperature is raised to 450 °C, spongy deposits are formed. High concentration solutions are beneficial for volume precipitation within droplets. Solid particles are formed, melted and form splats on contact with the substrate. The build-up of dense splats provides a dense coating.     

Effect of growth time on morphology and photovoltaic properties of ZnO nanowire array films

Single-crystalline ZnO nanowire arrays with different aspect ratios and nanowire densities were prepared by the hydrothermal growing method using polyethyleneimine (PEI) as a surfactant. PEI can only hinder the lateral growth of the ZnO nanowires, which is observed by high resolution transmission electron microscopy (HRTEM) analysis. Dye-sensitized solar cells were assembled by the ZnO nanowire arrays with different thicknesses, which can be controlled by the growing time and characterized using photocurrent-voltage measurements. Their photocurrent densities and energy allover conversion efficiencies increased with increasing ZnO nanowire lengths. Short-circuit current den-sity of 4.31 mA-cm-2 and allover energy conversion efficiency of 0.87% were achieved with 12.9-μm-long ZnO nanowire arrays.     

MOD法制备Zr~(4+)掺杂的YBCO薄膜及其性能

通过在前驱溶液中掺杂乙酰丙酮锆(Zr(C5H7O2)4),成功地制备了掺杂YSZ的YBCO薄膜。该YBCO薄膜具有很好的面内和面外织构,通过SEM和TEM发现,在薄膜的表面均匀地分布着大小为10nm左右的YSZ颗粒。通过对掺杂的和未掺杂的YBCO薄膜超导性能的比较发现,经过掺杂的YBCO薄膜的临界转变温度(Tc)为90.5K,比未掺杂的YBCO薄膜(Tc=91.7K)下降了1.2K;掺杂的YBCO薄膜在自场下的临界电流密度(Jc)为3.31MA/cm2,比未掺杂YBCO薄膜的Jc(3.69MA/cm2)稍微有所降低,但是在外加磁场下,掺杂的YBCO薄膜的场性能远高于未掺杂的样品,在77K,1T磁场下的掺杂样品中,其Jc值是未掺杂的YBCO薄膜的2.5倍。     

径向温度梯度对熔化生长大块YBCO超导体形貌及性能的影响

用实验的方法研究了径向温度梯度对熔化生长ＹＢＣＯ大块超导体形貌及性能的影响。结果表明，正的径向温度梯度有利于抑制ＹＢＣＯ大块超导体的成核数，制得的样品具有扇形形貌，晶畴区少而大，样品具有高的磁悬浮力。负的径向温度梯度则不然，制得的样品无规则形貌，晶畴区多且小，磁悬浮力低。对上述结果从理论上给出了定性解释     

在金属Ni基带上用非真空涂覆工艺制备的YBCO厚膜的晶粒形貌

在金属Ni基带上，用旋转匀胶（spin)和刷涂（printing)工艺制备了具有c轴择优取向的YBCO厚膜，厚膜表面晶粒呈菊花和多边形状，菊花尺寸在0．2－0．5mm左右，最大尺寸达到1mm以上，多边形状晶粒常处在菊花的中心位置，MPMP（改进的粉末熔化工艺粉）试样中主要出现菊花状晶粒，多边形状晶粒基本不出现，PMP（粉末熔化工艺粉）试样中2种形貌晶粒一般同时存在。添加中间层（Ag)之后，菊花状晶粒消失或变得很不明显，X射线衍射分析表明，试样主要由Y123相组成并具有一定的C轴择优取向。     

Effects of heat treatment on morphological, optical and electrical properties of ITO films by sol-gel technique

Indium-tin-oxide（ITO） films were prepared on the quarts glass by sol-gel technique. Effects of different heat treatment temperatures and cooling methods on the morphological, optical and electrical properties of ITO films were measured by TG/DTA, IR, XRD, SEM, UV-VIS spectrometer and four-probe apparatus. It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure. The heat treatment process has significant effects on the morphological, optical and electrical properties of ITO films. Elevating the heat treatment temperature can perfect the crystallization process of ITO films, therefore the optical and electrical properties of ITO films are improved. But the further increasing of heat treatment temperature results in the increment of ITO films＇ resistivity. Compared with ITO films elaborated by furnace cooling, those prepared through air cooling have following characteristics as obviously decreased crystalline size, deeply declined porosity, more compact micro-morphology, improved electrical property and slightly decreased optical transmission.     

A comparative study of the properties of TiN films deposited by MAIP and FCAP

In this study two types of TiN films were prepared, one using the filtered cathodic arc plasma (FCAP) technique with an in-plane “S” filter, and the other using the multi-arc ion-plating (MAIP), and both deposited under the same parameters. Comparisons of the texture, hardness, roughness, tribological and electrochemical corrosion behaviors of the two types of TiN films were given. The TiN films obtained by the FCAP technology were found to be highly uniform, smooth and macroparticle-free. The TiN films deposited by FCAP had a (111) preferred orientation, while there was no texture in the films deposited by MAIP. Under low load the two kinds of TiN coatings had very different wear mechanisms; the films of FCAP had a lower wear rate and friction coefficient compared with the TiN films deposited by the MAIP technique. The dense and hole-free structure of TiN films of FCAP could effectively avoid the avalanche of TiN films from the substrate during corrosion tests.     

Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growth

φ200 mm silicon single crystals were grown in the φ450 mm hot zone of a Czochralski （CZ） furnace. By modifying the pattern and the velocity of the argon flow, the silicon single crystals with different oxygen concentrations were obtained. Through numerical simulation, the velocity of the argon gas flow was plotted for the first time. The experiment resuits were analyzed and the optimum condition of the argon flow with the lowest oxygen concentration was obtained.     

重铬酸钾对钛合金表面微等离子体氧化陶瓷膜结构和耐蚀性的影响

在钛合金表面用微等离子体氧化能产生一层陶瓷膜,将重铬酸钾引入磷酸盐电解液将使钛合金微等离子体氧化过程的槽电压升高,经对所得微等离子体氧化陶瓷膜表面和截面进行扫描电镜（SEM）形貌观察,发现重铬酸钾的加入使陶瓷膜的致密性增加,XRD分析表明,不同电解液中所得膜层都是以锐钛矿型TiO2为主晶相,同时还含有少量的金红石型TiO2,重铬酸钾的加入使锐钛矿型TiO2的含量增加,对膜层进行电偶电流和循环伏安测试表明,重铬酸钾的加入使所得的膜层对金属的接触腐蚀降低,抗点腐蚀能力大大提高。     

前驱体对四氧化三钴形貌的影响与表征

以Co(CH3COO)2.4H2O为钴源,聚乙二醇(PEG)20 000为表面活性剂,在水-正丁醇溶剂体系中,分别以氢氧化钾、碳酸铵和草酸为沉淀剂,采用沉淀法制备氢氧化钴、碱式碳酸钴和草酸钴前驱体。氢氧化钴前驱体于160℃通过水热氧化法,可制得立方体状四氧化三钴(Co3O4);碱式碳酸钴和草酸钴前驱体采用水热-热分解法分别于450℃和400℃煅烧3 h可制得球链状和棒状Co3O4。用热重分析、红外光谱、X射线衍射和透射电镜对所制得前驱体和产物Co3O4的形貌和结构进行表征,并对所制备的不同形貌Co3O4进行电化学性能测试。研究结果表明:产物Co3O4的形貌与其前驱体和制备方法有关,当采用氢氧化钴前驱体可制备平均晶粒度约为15 nm的立方体状Co3O4;当采用碱式碳酸钴和草酸钴前驱体可分别制得直径约为40 nm、长约为100 nm的球链状Co3O4和直径约为0.1μm、长度可达1μm的棒状Co3O4。通过对不同形貌的Co3O4进行循环充放电测试,可知纳米级Co3O4的电化学性能优于微米级Co3O4的;立方体状Co3O4的电化学性能优于其他形貌Co3O4的电化学性能,其循环10次后的充电比容量为406 mA.h/...     

Effect of precursor concentration on the properties of ITO thin films

Tin-doped indium oxide (ITO) thin films have been prepared by the spray pyrolysis method using indium chloride as a precursor and stannic chloride as a dopant. The effect of a precursor concentration on the structural, morphological, electrical and optical properties of films has been studied. The concentration of InCl₃ in the spraying solution is varied from 6.25 to 37.5 mM keeping doping percentage of tin fixed at its optimized value of 5 wt.%. Bare glass is used as a substrate and oxygen as the carrier and reaction gas. X-ray diffraction (XRD) patterns show that films are polycrystalline and their crystallinities are dependent on the precursor concentration. A surface morphology has been observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The typical ITO film has minimum resistivity value of 2.71 × 10⁻³ Ω cm, whose carrier concentration and mobility were 7.45 × 10¹⁹ cm⁻³ and 31 cm²/(V s), respectively. In addition, the best ITO film has optical transmittance of 94.4% and figure of merit 1.20 × 10⁻³ Ω⁻¹.     

Microstructure and tribological properties of the a-C:H films deposited by magnetron sputtering with CH4/Ar mixture

Hydrogenated amorphous carbon (a-C:H) films were deposited on steel and silicon wafers by unbalanced magnetron sputtering under different CH₄/Ar ratios. Microstructure and properties of the a-C:H films were investigated via Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Atomic force microscopy (AFM) and substrate curvature method. The results revealed that CH₄/Ar ratio played an important role in the H content but acted a little function on the sp³/sp² ratio of the films. Also, the internal stress of those films was relatively low (< 1 GPa), and the deposition rate decreased firstly and then increased with the decrease of the CH₄ fraction. The film deposited under CH₄/Ar = 1/1 (55 sccm/55 sccm) with moderate sp³ C-H / sp³ C-C had the best tribological properties. The composition, microstructure and properties of the a-C:H films were strongly dependent on the deposition process and composition of reactant gases.     

Effects of la concentration on the texturing and the electrical properties of sol-gel derived PLT thin films

Lanthanum doped lead titanate (PLT) thin films consisting of different La concentrations were fabricated on Pt/Ti/SiO₂/Si using sol-gel method. The films were dried at 440°C for 5 min and fired at 600°C using rapid thermal annealing (RTA) for 1min. The preferred orientation (texturing) and the morphology of the PLT film were changed with La concentration and a possible cause of the texturing has been discussed. The effects of La doping to the Lead titanate films on the dielectric constants, P-E hysteresis loop and pyroelectric coefficient were measured and discussed.     

基片偏压对电弧离子镀ZrN薄膜微结构和表面形貌的影响(英文)

在不同的基片偏压下利用电弧离子镀技术制备氮化锆薄膜,以考察基片偏压对氮化锆薄膜微结构和表面形貌的影响。利用XRD、EPMA和FE-SEM等技术对不同偏压时得到ZrN薄膜的相结构、成分和表面形貌进行表征。结果表明,薄膜中存在立方氮化锆和六方纯锆相;随着基片偏压的增大,薄膜的择优取向由(111)变为(200),最后变为(111),晶粒尺寸由30nm减小至15nm。同时发现,随着基片偏压的增大,薄膜微结构由明显的柱状特征变为致密的等轴晶特征,表明由偏压增强的离子轰击能有效抑制柱状晶生长;薄膜沉积速率和锆氮摩尔比随着基片偏压的增大先增大后减小,在-50V时达到最大。     

Effects of Processing Parameters on the Grain Growth and Levitation Force of Large Bulk YBCO Superconductors

实验结果表明,较慢的熔化生长速度有利于改善YBCO晶体的形貌并提高其磁悬浮性能。但无论怎样改善工艺都很难得到单畴的YBCO大块超导材料。为此引进了Sm