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本文简要叙述了开发和研制BSIT的市场背景和技术现状;对BSIT(BipolarStaticInductionTransistor)器件模型进行了理论分析;对BSIT器件的设计和制作工艺进行了探讨,并分析了BSIT器件的工作原理和特性;介绍了BSIT器件的应用和上灯试用情况。 相似文献
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在新的阻断状态全解析模型基础上,结合已有的理论成果,全面分析了双极模式静电感应晶体管(BSIT)的静态、动态和温度特性,并在分析中更加明确地论证了势垒钉扎等问题,为BSIT的设计提供了理论依据。 相似文献
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基于0.13 μm SiGe BiCMOS工艺,开展了无深槽NPN SiGe HBT工艺和器件仿真。模拟了带深P阱SiGe HBT的制备过程、常规电学特性和重离子单粒子效应。该器件与常规器件相比表现出更优的单粒子瞬态(SET)特性,在关态的SET响应峰值下降了80%,在最大特征频率工作点的SET响应峰值下降了27%,瞬态保持时间也大幅减小。使用深N阱和深P阱隔离同时抑制了集电区-衬底结的漂移载流子收集和衬底扩散载流子收集的过程,极大地提高了器件的SET性能。 相似文献
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提出了一种新型低功耗、高稳态电平位移电路。该电路能将5 V输入电压转换为10 V输出电压,在电路的初态和电平转换过程中均保持高稳态。采用瞬态增强结构,能加速电平信号之间的转换,有效地减小了传输延迟,提高了电路稳定性。瞬态增强结构在稳定状态时不发挥作用,减小了静态功耗,获得了低功耗。基于标准0.35 μm BCD工艺和多5 V LDMOS耐压器件,对该电平位移电路在5 MHz频率下进行验证。结果表明,动态功耗仅为24.8 μA,上升沿响应速度仅为12.7 ns,下降沿响应速度仅为22.8 ns。该电路具有可靠性高、功耗低的优点。 相似文献
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研究了GaN HFET中沟道热电子隧穿到表面态及表面态电子跃迁到表面导带两种跃迁过程及其激活能.从沟道热电子隧穿过程出发,提出了新的电流崩塌微观模型.用该微观模型解释了光离化谱、DLTS、瞬态电流及电流崩塌等各类实验现象.研究了各种异质结构的不同电流崩塌特性,在此基础上讨论了无电流崩塌器件的优化设计. 相似文献
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GaN HFET沟道热电子隧穿电流崩塌模型 总被引:8,自引:1,他引:7
研究了GaN HFET中沟道热电子隧穿到表面态及表面态电子跃迁到表面导带两种跃迁过程及其激活能.从沟道热电子隧穿过程出发,提出了新的电流崩塌微观模型.用该微观模型解释了光离化谱、DLTS、瞬态电流及电流崩塌等各类实验现象.研究了各种异质结构的不同电流崩塌特性,在此基础上讨论了无电流崩塌器件的优化设计. 相似文献
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利用BSIT电流放大系数具有负温度系数的特点,结合目前我国半导体工艺水平研制的改进型BSIT——WT3DG系列宽温区硅高频小功率晶体管,具有良好的电性能和温度特性。是工作在-65~200℃温度范围内电子仪器的理想器件。 相似文献
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The failure of a bipolar static induction transistor(BSIT) often occurs in the transient process between the conducting-state and the blocking-state,so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices.The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper.The influences of material,structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth.The technological approaches are developed to improve the dynamical characteristics of BSITs. 相似文献
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Proposed are two doping profiles of the conducting channel in bipolar-mode static induction transistors (BSITs) that improve the current handling capability. By using the results obtained from two-dimensional device simulations, it is shown that BSITs with the proposed profiles exhibit higher drain current density and DC current gain than conventional BSITs. Also discussed is the tradeoff between the current and voltage capabilities 相似文献
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This work is addressed to the investigation of the electro-thermal performance of RF-LDMOS transistors integrated in TF-SOI, TF-SOS and thinned TF-SOS substrates by means of numerical simulations. Reported experimental trap density, carrier mobility and capture cross-section values have been used together with sapphire datasheet thermal properties, in order to provide accurate simulation results. It is found that subthreshold characteristics are the same for all the analysed substrates while blocking-state, on-state and power dissipation process depends on the substrate type. 相似文献
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The transition of the barrier-type thyristor(BTH)from blocking to conducting-state occurs between two entirely contrary physical states with great disparity in nature.The physical effects and mechanisms of the transition are studied in depth.The features of the transition snapback point are analyzed in detail.The transition snapback point has duality and is just the position where the barrier is flattened.It has a significant influence on the capture crosssection of the hole and high-level hole lifetime,resulting in the device entering into deep base conductance modulation.The physical nature of the negative differential resistance segment I-V characteristics is studied.It is testified byusmg experimental data that the deep conductance modulation is the basic feature and the linchpin of the transition process.The conditions and physical mechanisms of conductance modulation are investigated.The related physical subjects,including the flattening of the channel barrier,the buildup of the double injection,the formation of the plasma,the realization of the high-level injection,the elimination of the gate junction depletion region,the deep conductance modulation,and the increase in the hole'S lifetime are all discussed in this paper. 相似文献
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We have experimentally observed a new operating state of a regular pulse train in a narrow-band optoelectronic oscillator (OEO) system, where the direct-current (DC) bias of the Mach-Zehnder modulator is set at the maximum value of the transmission transfer function instead of the usual quadrature point. The observed quasi-steady-state pulse train is distinctly periodic, with a period of 10.5 µs and a center frequency of 10 GHz, and resembles a mode-locked OEO in its waveform. The formation of regular pulses here may arise from the dynamic balance of nonlinearity and narrow-band filter effects, with the transient characteristics of the pulses arising mainly from instabilities between the gain and cavity loss. Our results are of great importance for deepening the understanding of the nonlinear dynamical processes in OEO systems. 相似文献
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The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor (SITH) have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution control- ling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed. 相似文献