基于双导体耦合线Marchand 巴伦的 快速建模与设计*

针对Marchand 巴伦模型参数提取效率低,耗时长的问题,本文提出了一种快速提取Marchand 巴伦模型参数的 方法。传统的耦合线建模过程中,当耦合线的物理尺寸,如长度、宽度、间距发生变化,需要重新进行电磁场仿真,占据大量的 计算机资源和仿真时间。本文首先基于c、π 模表征的耦合线分布模型构建了Marchand 巴伦模型,通过对耦合线全波电磁场 仿真获得的模型参数提取结果进行数据分析和拟合,找出耦合线物理尺寸和模型参数之间的关系,建立对应方程,避免在巴伦 设计优化过程中反复进行电磁场仿真,达到快速设计Marchand 巴伦的目的。使用该方法基于PCB 板设计了中心频率为 2.4 GHz 的巴伦进行验证,测试结果表明该方法提取的模型参数具有较好的精度,能够满足巴伦的快速设计需求。     

基于三导体耦合线的毫米波Marchand balun建模与设计

本文提出了一种基于三导体耦合线结构的毫米波Marchand巴伦的新型宽带模型。基于c模和π模理论,对三导体耦合线进行了分析并采用传输线和理想变压器对其建立了模型。通过电磁场仿真提取了模型参数并使用该耦合线模型建立了Marchand巴伦的模型。基于该模型,本文使用GaAs工艺设计了一种毫米波Marchand巴伦并进行了流片制造,所设计的巴伦工作在15GHz~55GHz频率范围,测试结果表明该巴伦具有较好的幅值和相位平衡度,同时验证了模型的准确性。     

基于三导体耦合线的毫米波Marchand balun建模与设计（英文）

提出了一种基于三导体耦合线结构的毫米波Marchand巴伦的新型宽带模型.基于c模和π模理论,对三导体耦合线进行了分析并采用传输线和理想变压器对其建立了模型.通过电磁场仿真提取了模型参数并使用该耦合线模型建立了Marchand巴伦的模型.基于该模型,使用GaAs工艺设计了一种毫米波Marchand巴伦并进行了流片制造,所设计的巴伦工作在15~55 GHz频率范围,测试结果表明该巴伦具有较好的幅值和相位平衡度,同时验证了模型的准确性.     

小型化三耦合线Marchand巴伦的等效模型分析与验证

为了实现三耦合线Marchand巴伦的快速设计,缩小巴伦的尺寸,提出了一种简化的三耦合线Marchand 巴伦等效模型及小型化设计方法。该等效模型将复杂的三耦合线的S参数散射矩阵的计算问题简化为对两个并联的平行耦合线的S参数散射矩阵的计算。为了验证该模型和设计方法的有效性,采用0.1 μm 砷化镓pHEMT (pseudomorphic High Electron Mobility Transistor)工艺制作了一款75~110 GHz的单平衡混频芯片,最终应用于单平衡混频器的巴伦耦合线长度被缩减为中心频率1/4波长的44%。良好的混频器性能和紧凑的芯片面积证明了所提三耦合线巴伦的等效模型和设计方法能够为单片集成微波电路芯片的设计提供指导作用。     

Multisim中磁耦合线圈的建模

EDA技术已经广泛地用于电路仿真和设计,Multisim软件因其丰富形象的虚拟器件得到实验仿真使用者的一致青睐。本文针对Multisim9．0以下版本缺少磁耦合线圈元件的缺陷,提出一种建立虚拟磁耦合线圈分析模型的方法,推导了该虚拟器件模型参数与磁耦合线圈参数之问的对应关系,通过与实测数据、PSpicc和Multisim10．0仿真结果进行比较,验证了该模型的正确性。还可以利用该虚拟器件实现基于磁耦合线圈的耦合谐振以及无接触电能传输的实验仿真研究。     

三维集成电路中TSV-TSV的耦合分析与优化

TSV-TSV耦合会对三维集成电路的性能造成影响,主要的负面效应就是引入了耦合噪声。为了能够在初期设计阶段准确的估计TSV间的耦合强度,本文首先提出了存在于TSV间的基于二端口网络的阻抗级耦合通道模型,然后推导出了TSV间的耦合强度公式用来描述TSV-TSV耦合效应。通过与三维全波仿真结果的对比,公式的准确度得到了验证。另外,本文提出了一种减小TSV间耦合强度的设计方法。通过SPICE仿真,所提出设计方法不仅可以应用在简单TSV-TSV的电路结构中,还可以应用在含有多个TSV的复杂电路结构中,从而体现了所提出设计方法的可行性,并且为设计者提供了改善三维集成电路电学性能的可能性。     

微带巴伦设计

根据微带耦合线的准TEM模参数 ,推导出相同耦合线Marchand巴伦须满足的导纳方程 ,讨论了改善巴伦性能的方法———电容补偿法。ADS仿真结果表明 :采用最佳条件选取的耦合线 ,巴伦的反射系数接近最小 ,传递系数接近最大 ;采取电容补偿后 ,可进一步改善巴伦的性能。最后给出宽边耦合线巴伦的实验结果。结果表明 :可用上述导纳方程设计巴伦耦合线的参数。     

双耦合线巴伦设计

基于微带耦合线的四端口网络模型,提出了一种双耦合线巴伦,根据最小反射系数准则,推导出巴伦应满足的阻抗方程,并给出不同带宽所要求的耦合线奇偶模阻抗.最后给出ADS仿真结果及实验结果.     

IGBT模型参数辨识及其有效性验证

由于导通及开关损耗小以及易于使用等优点，IGBT在电力电子系统中得到越来越广泛的应用。在设计电路之前，需要精确的器件模型及模型参数对电路进行仿真。本文提出一种基于实验测量、仿真及优化算法的IGBT模型参数辨识方法。以BUP302为例，给出了静态参数及动态参数的结果。在参数辨识的基础上，文中还提出了模型参数有效性验证的方法，最后给出了有效性验证结果。     

基于多场耦合的电机暂态温度场研究

针对复杂工况下电机不稳定发热引起的温度场暂态计算问题,根据不稳定发热的规律建立电磁场与温度场的二维耦合模型。文中依据小型式异步电机的结构特点,进行电磁场-热场二维模型的结构参数、边界条件参数、材料的电、热物理参数的计算、等效及配置;依据复杂工况下发热变化的规律,进行耦合频率、热源耦合方式的设计及相关参数计算配置,实现不稳定负载下电机的暂态温度场计算并考察电机各部分的实际最高温度分布状况。基于实验平台的方案设计和搭建,进行温升实验。通过对比分析电机暂态温度场的仿真和实验数据,验证了二维模型参数等效的合理性和多场耦合法能够准确地计算复杂工况下电机全暂态温度场。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.