基于DSP技术和以太网卡的数据传输方案

文中介绍了基于以太网卡和DSP芯片TMS320F2407实现TCP/IP协议的简化方案.本设计采用DSP芯片TMS320F2407和网络接口芯片TRL8019AS来设计网络接KI'控制器,对TCP/IP协议族进行了分析简化,并在DSP中实现了简化的协议栈,通过软件编程实现数据传输.实验表明:以TMS320LF2407和RTLS019AS以太网控制器构成的网络化通信系统,成本较低,结构简单、性能稳定可靠.     

基于ARM和DSP的VoIP网关的设计与实现

文章介绍了基于ARM和DSP的VoIP网关的软硬件设计.其中硬件主要由基于ARM内核的微处理器S3C44B0子系统和基于LSI403LP芯片的DSP子系统以及电话接口模块构成.软件设计主要负责控制SIP核心协议栈oSIP、RTP/RTCP核心协议栈ccRTP的正常运转,控制外围DSP芯片工作.测试证明,文章所设计的VoIP网关能够实现网关的主要功能,具有成本低廉、应用灵活、可扩展性好的特点.     

基于ARM的嵌入式TCP／IP协议的实现

分析嵌入式TCP/IP协议的选取原则,采用ARM芯片和网络接口控制芯片设计以太网接口,介绍ARM芯片对网络接口控制芯片的控制过程和TCP/IP协议栈处理数据包的流程,完成嵌入式TCP/IP系统的开发.该系统可以将数据按网络协议处理,实现数据的以太网传输.其是一套基于嵌入式实时操作系统的嵌入式网络软件开发平台,即在μC/OS-Ⅱ的平台上,实现ARM微处理器的TCP/IP协议,在此平台之上,可以方便地进行嵌入式应用系统的开发.     

基于ARM的以太网接口电路设计

阐述了基于ARM处理器LPC2294的嵌入式系统的以太网接口电路的设计,针对当前嵌入式研究领域的技术热点,实现了以太网功能在嵌入式系统上的开发与应用.详细介绍了ARM处理器的硬件设计,LPC2294与以太网控制器RTL8019AS的接口电路设计和以太网传输层的UDP协议、TCP/IP协议的软件设计流程,以及系统的通信调试过程.ARM处理器与RTL8019AS通过外部数据总线连接,具有非常好的实时性和可靠性,很好地实现了嵌入式系统的以太网功能.     

基于嵌入式技术的IP机顶盒系统设计

作为电视机和宽带网络之间的接口,基于Internet协议的IP机顶盒可以实现家庭电视与Inter-net网络上数字内容服务的交互。介绍了一种基于嵌入式技术的IP机顶盒的总体设计方案,给出了基于ARM9和DSP双核处理器的系统硬件实现方案和基于层次结构理论的系统软件实现方案。该系统具有可控性高、数据处理能力强、扩展性好等特点。     

基于ARM核的Internet终端的设计与应用

通过对TCP/IP协议的分析,结合嵌入式系统的特点,设计出一种基于ARM核的Internet终端的设计方案,该方案对TCP/IP协议族实现过程中的关键技术进行分析,提出了一套精简、实用的TCP/IP协议子集,并详细介绍了各协议层的实现过程。在系统上移植了μC/OS-Ⅱ操作系统,以ARM单片机为基础的硬件平台,实现嵌入式系统与网络互联,最后介绍了该系统在工业以太网控制过程中的应用,为嵌入式网络的开发提供了一种可行的思路。     

基于TMS320C5402的IP语音通信系统的设计

介绍了基于DSP技术的IP语音通信系统的设计。详细论述了系统结构以及音频接口模块、网络接口模块的设计方法。针对软件结构,给出了G.729语音编码以及UDP传输协议的选择与在TMS320C5402上的实现。     

基于ARM的嵌入式MPEG-4远程网络监控系统的设计与实现

本文详细介绍了基于ARM的嵌入式MPEG-4远程网络监控系统的视频采集、压缩、传输和系统控制等方面的设计，提供了基于TCP／IP协议的C／S软件结构和多线程通信的设计与实现方法。     

基于W5100的嵌入式网络通信系统

文中介绍了一种基于新型独立以太网接口芯片W5100@软硬件设计方法。详细介绍了新型独立以太网控制器W5100的结构、功能、外围电路,并对W5100与DSP通讯和两者TCP／IP协议栈的实现进行了软硬件设计。     

基于DSP的网络化数据采集卡设计

为了实现远程数据采集和传输,本文提出了一种基于DSP的网络化数据采集卡的设计。介绍了DSP与A/D转换模块的接口设计和DSP与以太网控制器的接口设计。实现了基于DSP的TCP/IP协议栈的嵌入。现代数据采集领域中,越来越多地现场采集设备需要扩展网络功能以实现远程控制和数据传输。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.