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HV/CVD系统Si、SiGe低温掺杂外延 总被引:5,自引:2,他引:3
研究了硼烷 (B2 H6 )掺杂锗硅外延和磷烷 (PH3)掺杂硅外延的外延速率和掺杂浓度与掺杂气体流量的关系 .B浓度与 B2 H6 流量基本上成正比例关系 ;生长了 B浓度直至 10 1 9cm- 3的多层阶梯结构 ,各层掺杂浓度均匀 ,过渡区约 2 0 nm,在整个外延层 ,Ge组分 (x=0 .2 0 )均匀而稳定 .PH3掺杂外延速率随 PH3流量增加而逐渐下降 ;P浓度在 PH3流量约为 1.7sccm时达到了峰值 (约 6× 10 1 8cm- 3) .分别按 PH3流量递增和递减的顺序生长了多层结构用以研究 PH3掺杂 Si外延的特殊性质 相似文献
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在国产分子束外延设备的基础上 ,利用新型三温区阀控裂解源炉 ,对 In P及 In Ga As P材料的全固源分子束外延 (SSMBE)生长进行了研究。生长了高质量的 In P外延层 ,表面缺陷密度为 65cm- 2 ,非故意掺杂电子浓度约为 1× 1 0 16cm- 3.In P外延层的表面形貌、生长速率及 p型掺杂特性与生长温度密切相关 .研究了 In Ga As P外延材料的组分特性 ,发现在一定温度范围内生长温度对 族原子的吸附系数有较大影响 .最后得到了晶格匹配的 In0 .56Ga0 .4 4 As0 .94 P0 .0 6材料 ,低温光致发光谱峰位于 1 50 7nm,FWHM为 9.8me V. 相似文献
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全固源分子束外延生长InP和InGaAsP 总被引:1,自引:0,他引:1
在国产分子束外延设备的基础上,利用新型三温区阀控裂解源炉,对InP及InGaAsP材料的全固源分子束外延(SSMBE)生长进行了研究.生长了高质量的InP外延层,表面缺陷密度为65cm-2,非故意掺杂电子浓度约为1×1016cm-3.InP外延层的表面形貌、生长速率及p型掺杂特性与生长温度密切相关.研究了InGaAsP外延材料的组分特性,发现在一定温度范围内生长温度对Ⅲ族原子的吸附系数有较大影响.最后得到了晶格匹配的In0.56Ga0.4As0.04P06材料,低温光致发光谱峰位于1507 nm,FWHM为9.8 meV. 相似文献
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在开管系统中,汽相生长了磷化铟外延层。发现生长速率、掺杂浓度、电子迁移率和位错密度都受流量影响。为了生长高质量外延层,建议用低流量。详细研究了 PCl_3克分子分数的影响,研究表明,在生长区内的克分子分数是控制掺杂浓度的参数之一,而源区的克分子分数与之无关。 相似文献
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采用超高真空化学气相淀积系统,以高纯Si2 H6和GeH4作为生长气源,用低温缓冲层技术在Si(001)衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530'和5.5cm-1,具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm-2可用于制备Si基长波长集成光电探测器和Si基高速电子器件. 相似文献
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采用超高真空化学气相淀积系统,以高纯Si2 H6和GeH4作为生长气源,用低温缓冲层技术在Si(001)衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530'和5.5cm-1,具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm-2可用于制备Si基长波长集成光电探测器和Si基高速电子器件. 相似文献
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针对应变Si1-xGex的应变致能带分裂及重掺杂对裂值的影响,提出了多子双带结构的等价有效简并度模型和有关算法。模型中考虑了非抛物线能带结构。应用该模型,计算了赝形生长在(100)Si衬底上的Si1-xGex应变层的重掺杂禁带窄变,发现当掺杂超过一定浓度(对于p型和n型合金,该浓度分别约为1.9×1019cm-3和3.5×1019cm-3)后,它在某一Ge组分下得到极大值,而当掺杂低于这个浓度时,它则随Ge组分的增加单调下降。文中还将计算结果与其它未细致考虑应变致能带分裂因素的理论工作进行了比较。 相似文献
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Jae-Chun Han Jong-In Song Sung-Woong Park Deokha Woo 《Electron Devices, IEEE Transactions on》2002,49(1):1-6
Growth of ultrahigh carbon-doped p-type InGaAs lattice matched to InP by chemical beam epitaxy (CBE) using carbon tetrabromide (CBr4 ) as a doping source was investigated. Effects of growth temperature, group V supply pressure, and CBr4 supply pressure on growth rate, composition, mobility, and hole concentration of carbon-doped InGaAs were studied. Ultrahigh net hole concentration and room-temperature mobility of 2 × 1020/cm3 and 33 cm2/V·sec, respectively, were achieved. Mobility of the ultrahigh carbon-doped InGaAs using CBr4 compared favorably to those of CBE grown carbon-doped InGaAs using carbon tetrachloride (CCl4) and molecular beam epitaxy grown beryllium (Be)-doped InGaAs grown at low temperature. The highly carbon-doped InGaAs layers grown by CBE using CBr4 as a doping source showed a negligible hydrogen passivation effect and were used for the growth of high-performance, highly carbon-doped base InP/InGaAs heterojunction bipolar transistor epitaxial layer structures 相似文献
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Si/SiGe/Si n-p-n HBT structural materials have been grown by gas source molecular beam epitaxy with disilane, solid Ge, diborane and phosphine as sources. The materials are of good structural properties. The effectiveness of Electrochemical Capacitance-Voltage (ECV) technique on profiling the shallow doped layers of nanometer dimensions has been demonstrated. Compared with spreading resistance probe, the ECV technique is relatively easy to get the carrier distribution profile, especially for the Si/SiGe/Si HBT structural materials with shallow (≤50nm) base regions (p-type SiGe layer, Ge content about 0.2). The results show that n-p-n structures can be obtained by in situ doping. 相似文献
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R. D. Dupuis J. C. Bean J. M. Brown A. T. Macrander R. C. Miller L. C. Hopkins 《Journal of Electronic Materials》1987,16(1):69-77
We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical
vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge
and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied,
the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal
X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission
electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial
layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth
of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of
a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped
AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates. 相似文献
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Cubic SiC thin films have been epitaxially grown on silicon substrates using the single source precursor methylsilane (H3Si–CH3). Single phase films were grown by supersonic jet epitaxy (SJE) at temperatures as low as 560°C on Si(111) and 600°C on Si(001). Growth rates and crystal quality were found to be strongly dependent on substrate temperature and methylsilane kinetic energy. Films were characterized by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). 相似文献
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A. E. Wickenden L. B. Rowland K. Doverspike D. K. Gaskill J. A. Freitas D. S. Simons P. H. Chi 《Journal of Electronic Materials》1995,24(11):1547-1550
The silicon doping of n-type GaN using disilane has been demonstrated for films grown on sapphire substrates by low pressure
organometallic vapor phase epitaxy. The binding energy of an exciton bound to a neutral Si donor has been determined from
low temperature (6K) photoluminescence spectra to be 8.6 meV. Nearly complete activation of the Si impurity atom in the GaN
lattice has been observed. 相似文献
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S. R. Rao S. S. Shintri J. K. Markunas R. N. Jacobs I. B. Bhat 《Journal of Electronic Materials》2011,40(8):1790-1794
High-quality (211)B CdTe buffer layers are required during Hg1−x
Cd
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Te heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as
well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was used as a precursor
to enable As surfactant action during CdTe MOVPE on Si. The grown CdTe/Si films display a best x-ray diffraction rocking-curve
full-width at half-maximum of 64 arc-s and a best Everson etch pit density of 3 × 105 cm−2. These values are the best reported for MOVPE-grown (211)B CdTe/Si and match state-of-the-art material grown using molecular-beam
epitaxy. 相似文献
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A slider system has been developed for crystallisation of semiconductor films on SiO2. The system consists of a graphite support, graphite strip heater and movable quartz substrate holder. A two heater procedure can be achieved with an RF heating coil. Single-crystal Ge films have been successfully grown over SiO2 on a Si substrate using a hetero lateral epitaxy by seeded solidification technique. 相似文献