P/6061Al的变形断裂特征和塑性

为了更清楚地认识颗粒增强铝塑性差的细微观机制, 进行了(Al₂O₃)_P/6061Al的拉伸和三点弯曲变形实验,并用扫描电镜观察了变形与断裂的细微观特征。发现: (1) 在加载过程中,总是基体先发生变形局部化,形成变形带; 变形带内较大的Al₂O₃颗粒优先开裂,形成颗粒尺度的微裂纹; 变形带内的集中变形和Al₂O₃颗粒的继续开裂交互作用,导致微裂纹沿着变形带连接与扩展进而发生宏观低塑性断裂;(2) 加载方式、材料状态和变形温度对上述过程没有本质影响。根据以上观察结果和颗粒增强铝的强化机理,讨论了塑性差的细微观机制以及材料状态和变形温度对(Al₂O₃)_P/6061Al塑性的影响。      

铝基复合材料(Al2O3p/6061Al)过渡液相扩散连接

研究了Al-Si合金中间层Al2O3p/6061Al复合材料过渡液相扩散连接接头的显微结构和连接工艺参数对接头剪切强度的影响。连接区主要由Al-Si合金组成，无Al2O3颗粒，接头裂纹起源于Al-Si合金与Al2O3颗粒界面处，并主要在连接区Al-Si合金中扩展，连接工艺参数对接头剪切强度影响程度依次为Al-Si合金中间层厚度、连接温度、保温时间。选择合适的连接工艺参数，接头剪切强度可达70－80MPa。     

增强颗粒与基体适配性对颗粒增强铝基复合材料强化机理的影响

用粉末冶金法制备了分别用Al2O3、SiC颗粒增强的颗粒体积分数为25%的6061Al基复合材料,在不同温度对其进行固溶-时效热处理,通过拉伸曲线分析和断口SEM分析研究了增强颗粒与基体适配性对颗粒增强铝基复合材料拉伸性能的影响。结果表明,低强度Al2O3颗粒不适合用于增强高强度的6061Al基体;研究了增强颗粒与基体适配性对颗粒增强铝基复合材料强化机制的影响,发现主要通过影响应力传递机制来影响复合材料性能;揭示了适配性与增强颗粒开裂、复合材料屈服之间的关系,得出增强颗粒相对于基体强度越高,颗粒开裂越少,并总结了一种表示增强颗粒与基体适配性关系的方法。     

用纯金属Ni作中间层扩散连接铝基复合材料

采用纯金属Ni作中间层扩散连接氧化铝颗粒增强铝基复合材料(Al2O3P/6061Al),探究了连接温度和保温时间对接头显微结构与力学性能的影响.结果表明,连接温度610～620℃时,连接区主要由Al3Ni和Ni在Al中固溶体组成,Al3Ni含量随连接温度升高、保温时间延长而减少;连接温度630℃时,连接区主要由Al2O3颗粒和Ni在Al中固溶体组成,Al2O3颗粒偏聚于接头中心.连接温度620℃、保温时间5～120min条件下,接头抗剪强度68～93MPa,断裂于连接区与母材界面;连接温度630℃、保温时间5～120min条件下,接头抗剪强度93～97MPa,断裂于增强相偏聚区.     

SiCw/6061Al复合材料冲击破坏行为

本文用夏比冲击试验(Instrumented Charpy Testing)与SEM断口分析研究了SiCw/6061Al复合材料的冲击破坏行为.与SiCw是混乱分布的铸态SiCw/6061Al复合材料相比,挤压变形后材料的冲击韧性明显提高.热挤压变形改善了材料的性能.研究观察发现了分层开裂的现象.本文详细讨论了SiCw/6061Al复合材料的冲击断裂方式、比较了变形前后冲击破坏方式的差异,并分析了热挤压变形后韧性提高的原因.     

单晶γ-TiAl合金微裂纹扩展行为的分子动力学模拟

为了从微观原子结构探索γ-Ti Al合金裂纹扩展的机理,研究了恒定加载速度下温度对γ-Ti Al合金中裂纹扩展的影响。采用分子动力学方法对单晶γ-Ti Al合金中预置微裂纹的扩展过程进行模拟,研究表明,室温下裂纹呈脆性解理扩展,中、高温时,裂纹在扩展过程中发射位错,裂尖钝化并伴有偏转;随温度的升高,微裂纹由脆性解理扩展向韧性扩展转化,裂纹扩展速率减慢,材料塑性增加;裂尖发射的位错堆积在边界附近,使得位错堆积处萌生空洞缺陷,随着加载的继续,空洞最终长大形成微裂纹,出现边界开裂的现象。     

Al2O3/Al复合材料的界面结构特征

利用高分辩透射电子显微镜研究挤压铸造法制备的亚微米 Al 2O 3颗粒增强 Al 基复合材料的界面微观结构。结果表明 : Al基体的 (200) 和 (111) 面优先沿 Al 2O 3颗粒表面生长 , 在复合材料界面处 Al 基体与 Al 2O 3颗粒具有 Al (200) ∥Al 2O 3 (101 2) 、Al [011 ] ∥Al 2O 3 [0221 ] 的晶体学位向关系并形成半共格界面 , 且界面存在 Al (111) / / Al 2O 3 ( 1120) 的共格关系。界面干净无任何反应物。接近界面的 Al 基体中出现了柏氏矢量为 b= 1/ 3 [ 111 ] 弗兰克不全刃位错 , 该刃位错引起界面附近基体中明显的晶格应变场 , 位错周围晶格变形场的范围约为 20～30 层原子面宽度 , 而在 Al 2O 3颗粒靠近界面的区域中未观察到位错等缺陷。并从晶体学角度对界面的形成机制进行了分析。     

城轨列车制动盘SiC_(p)/A356复合材料热疲劳裂纹扩展机理EI北大核心CSCD

为研究制动盘服役温度载荷及材料微结构对SiC_(p)/A356复合材料热疲劳裂纹扩展行为的影响,明确其热疲劳裂纹扩展微观机理,开展SiC_(p)/A356复合材料热疲劳裂纹扩展实验。结果表明:裂纹扩展过程包括由SiC颗粒偏转作用和二次裂纹释放扩展驱动力导致的缓慢扩展阶段和主裂纹与裂纹扩展前端微损伤连接的快速扩展阶段;加热温度较低时,裂纹扩展的“台阶状”特征明显,整体扩展速率较低,裂纹宽度较小,裂纹扩展方式为颗粒断裂、轻量基体撕裂和沿界面开裂;加热温度较高时,“斜直线跃升”阶段更为明显,裂纹宽度较大且扩展速率较高,裂纹扩展以颗粒脱落以及大幅度基体撕裂为主;主裂纹总是通过选择沿SiC颗粒群或者直接穿过α-Al基体以阻力较小的方式向前扩展,Si相承载时极易发生断裂,成为裂纹扩展源,同时裂纹扩展前端的微损伤对其扩展具有引导作用。     

双屏蔽(B4C-W)/6061Al层状复合板设计与性能

基于B₄C和W良好的屏蔽中子和γ射线性能,采用6061铝合金作为基体,设计了一种新型双屏蔽(B₄C-W)/6061Al层状复合材料,通过放电等离子烧结后加热轧制成板材,对制备的复合材料微观组织和力学性能进行了研究。结果表明,屏蔽组元B₄C和W颗粒均匀地分布在6061Al基体中,层界面、B₄C/Al、W/Al异质界面之间结合良好,无空隙和裂纹。在颗粒与基体界面处形成扩散层,扩散层的厚度约为6 μm (W/Al)和4 μm (W/Al)。轧制态的(B₄C-W)/6061Al层状复合板的屈服强度(109 MPa)和极限抗拉强度(245 MPa)明显优于烧结态的复合材料,但断裂韧性降低。强度提高的原因主要是轧制后颗粒的二次分布、均匀性及界面结合强度提高,基体合金的晶粒尺寸减小,位错密度增加。层状复合板的断裂方式为基体合金的韧性断裂和颗粒的脆性断裂。      

SiC_P/Al基复合材料在等径角挤扭变形中的界面原子扩散行为

为了研究金属基复合材料在剧烈塑性变形(SPD)过程中增强颗粒与金属基体的界面连接机制,通过等径角挤扭(ECAP-T)工艺在较低温度下制备块状10wt%SiCP/Al基复合材料,并对经过1、2和4道次ECAP-T变形的SiC颗粒与纯Al之间的界面反应以及元素扩散进行了研究。通过TEM和XPS研究了界面和元素扩散,结果表明:即使在较低的外界制备温度下,Al和SiC颗粒表面的SiO2层也能够发生反应,形成主要由Al2O3组成的界面层。相比理论计算值,ECAP-T变形可以将Al的扩散系数提高约1016倍,增强扩散的原因主要是ECAP-T变形促使界面温度升高,且在铝基体内产生空位、位错和晶界等高密度晶格缺陷。     

Nitridation-assisted Al infiltration for fabricating Al composites

In this study, we developed an Mg-, vacuum-, and pressure-free process for manufacturing Al-based composites via nitridation-assisted spontaneous infiltration of molten Al. In this process, the wettability between molten Al and ceramic reinforcement was significantly enhanced by nitridation via heating and surface modification of the Al particles; this provided a sufficient capillary force (i.e., negative curvature) for spontaneous infiltration of molten Al. The proposed process can generate composites based on Mg-free Al matrices and is relatively versatile in terms of the type, volume fraction, and morphology of the reinforcement material. Furthermore, the properties of the final composites can be modified by controlling their degree of nitridation, thereby expanding the material scope and their corresponding application fields.     

低价硫化铝法从氧化铝直接炭还原制铝的动力学研究

低价硫化铝法从氧化铝直接炭还原制铝的动力学过程极为复杂,过程的前期受界面化学反应控制,过程后期受扩散过程控制,并求得不同时期的活化能,反应前期:E1=63.81 kJ/mol(6.67 Pa)、E2=50.82 kJ/mol(66.7 Pa)、E3=54.72 kJ/mol(666.7 Pa)、E4=39.61 kJ/mol(1333 Pa);反应后期:E*1=112.90 kJ/mol(6.67 Pa)、E*2=89.92 kJ/mol(66.7 Pa)、E*3=97.32 kJ/mol(666.7 Pa)、E*4=51.83 kJ/mol(1333 Pa).从动力学的角度提出了反应的较佳条件.温度、真空度的提高一方面可增大反应速率,但另一方面却加大了硫化铝的挥发,仅从增大速率而言,温度应大于1100 ℃,真空度应优于1333 Pa为宜.     

Thermal stability of Al/Al11 Ce3 and Al/Al11 La3 /Al3 Ni eutectics obtained by Bridgman growth

Abstract

The effects of extended treatment at 500°C on microstructure and microhardness of Al/Al₁₁ Ce₃ and Al/Al₁₁ La₃ /Al₃ Ni eutectics in Al–12·1Ce and Al–11·3La–5·4Ni (wt-%) alloys Bridgman solidified at 0·1 mm s^-1 are reported. Coarsening of Al/Al₁₁ Ce₃ occurs more rapidly in some eutectic cells than others such that areas coarsening at a lower rate still form 10% of the microstructure even after 3024 h. It was found that Al/Al₁₁ La₃ /Al₃ Ni showed accelerated coarsening at eutectic cell boundaries but association between Al₁₁ La₃ and Al₃ Ni still remained within cells and at cell boundaries even after 3024 h. Associated decreases in hardness for Al/Al₁₁ Ce₃ were similar to fibrous Al/Al₆ Fe of similar initial spacing subjected to the same heat treatment. The 30% higher initial hardness of Al/Al₁₁ La₃ /Al₃ Ni largely persisted even after 3024 h at 500°C.     

钪在铝及铝合金中的作用

总结了Sc在铝及铝合金中对合金组织、力学性能、热稳定性、焊接性能和抗腐蚀，性能的影响。Sc在铝合金中是有效的晶粒细化剂、再结晶抑制剂和改善焊接性能的添加剂；Sc可以细化铝合盒晶粒，提高合盒的力学性能和再结晶温度，增强铝合金的热稳定性，改善铝合盒的焊接性能和抗腐蚀性能；分析了Sc在铝合盒中的作用机理。     

Al and Ti/Al contacts on n-GaN

Al(60 nm) and Ti(40 nm)/Al(160 nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal organic chemical vapour deposition (MOCVD) on a c-plane sapphire substrate. The samples have been annealed at 300, 400, 700 or 900 °C for 10 min in vacuum. The microstructural and electrical properties of the contacts have been investigated by electron microscopy, X-ray diffraction and by current-voltage measurements. As-deposited Al and Ti/Al contacts were rectifying with Schottky barrier heights below 0.35 eV and 0.38 eV, respectively. After heat treatment at 300 °C and 400 °C both contacts exhibited linear current-voltage characteristics. After annealing at 700 °C Al contacts became rectifying with a barrier height of 0.42 eV, while Ti/Al contacts remained nearly linear at the same temperature. The electrical characteristics and XRD analysis indicated that the upper metal in Ti/Al contact diffused in the Ti layer already during deposition. Cross-sectional transmission electron microscopy revealed that in the case of Ti/Al contacts, the continuity of the Ti layers ceased when annealing above 700 °C. X-ray diffractions showed, that a Ti₂N interface phase formed in Ti/Al contacts at 700 and 900 °C, and an AlN interface phase developed in the same contact at 900 °C.     

Transport Properties of the Tunnel Junctions Al1-xCox/{Al1-xCox-oxide}/Al

The oxides of Al1-xCox (x=0,0.25,0.5,0.75, and 1.0) alloys were chosen as barrier materials in this work. The tunnel junction consists of the bottom electrode Al1-xCox and the top electrode Al with an insulating layer { Al1-xCox-oxide} which was formed by natural oxidation in a baking-box at 333K. The oxidation time for forming an Al1-xCox-oxide layer on the surface of the bottom Al1-xCox layers were optimized.The resistance of Al1-xCox/{ Al1-xCox-oxide}/Al tunnel junctions varied between 101 and 106 Ω measured at 1 my and 4.2 K. The effective barrier height and width of insulating layers Al1-xCox-oxide ( x=0.25, 0.5, and 0.75 )varied between 0.6 and 2.7 eV and between 1.3 and 2.1 nm. It is shown that the thin oxide layer of Al1-xCox alloys can be chosen as barrier materials.     

铝合金时效成形及时效成形铝合金

介绍了铝合金时效成形的方法、基本原理、工艺特点及应用情况,概括了国外研究铝合金时效成形工艺及相关可时效成形铝合金的现状,重点阐述了时效成形对铝合金微观组织结构的影响.