共查询到18条相似文献,搜索用时 140 毫秒
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数值模拟表明,薄膜全耗尽(FD)SOI器件的电位和电场分布,与较厚的部分耗尽(PD)SOI器件中所观测到的大不相同;漏电场和源势垒的降低使扭曲效应大为减小。 相似文献
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研究体偏置效应对超深亚微米绝缘体上硅(SOI,Silicon-on-insulator)器件总剂量效应的影响.在TG偏置下,辐照130nm PD(部分耗尽,partially depleted)SOI NMOSFET(N型金属-氧化物半导体场效应晶体管,n-type Metal-Oxide-Semiconductor Field-Effect Transistor)器件,监测辐照前后在不同体偏压下器件的电学参数.短沟道器件受到总剂量辐照影响更敏感,且宽长比越大,辐射导致的器件损伤亦更大.在辐射一定剂量后,部分耗尽器件将转变为全耗尽器件,并且可以观察到辐射诱导的耦合效应.对于10μm/0.35μm的器件,辐照后出现了明显的阈值电压漂移和大的泄漏电流.辐照前体偏压为负时的转移特性曲线相比于体电压为零时发生了正向漂移.当体电压Vb=-1.1V时部分耗尽器件变为全耗尽器件,|Vb|的继续增加无法导致耗尽区宽度的继续增加,说明体区负偏压已经无法实现耗尽区宽度的调制,因此器件的转移特性曲线也没有出现类似辐照前的正向漂移. 相似文献
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研究了深亚微米PD和FD SOI MOS器件遭受热截流子效应(HCE)后引起的器件参数退化的主要差异及其特点,提出了相应的物理机制,以解释这种特性。测量了在不同应力条件下最大线性区跨导退化和闽值电压漂移,研究了应力Vg对HCE退化的影响,并分别预测了这两种器件的寿命,提出了10年寿命的0.3μm沟长的PD和FD SOI MOS器件所能承受的最大漏偏压。 相似文献
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对1.2μ薄膜全耗尽SOI CMOS(TFD SOI CMOS)器件和电路进行了研究,硅膜厚度为80nm。器件采用LDD结构,以提高击穿电压、抑制断沟道效应和热载流子效应;对沟道掺杂能量和剂量进行了摸索,确保一定的开启电压和器件的全耗尽;为了减小“鸟嘴”,进行了PBL(Poly-Buffered LOCOS)隔离技术研究;溅Ti硅化物技术,使方阻过大问题得以解决。经过工艺流片,获得了性能良好的器件和电路。 相似文献
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总剂量辐射效应会导致绝缘体上硅金属氧化物半导体场效应晶体管(SOI MOSFET)器件的阈值电压漂移、泄漏电流增大等退化特性。浅沟槽隔离(STI)漏电是器件退化的主要因素,会形成漏极到源极的寄生晶体管。针对130 nm部分耗尽(PD) SOI NMOSFET器件的总剂量辐射退化特性,建立了一个包含总剂量辐射效应的通用模拟电路仿真器(SPICE)模型。在BSIM SOI标准工艺集约模型的基础上,增加了STI寄生晶体管泄漏电流模型,并考虑了辐射陷阱电荷引起寄生晶体管的等效栅宽和栅氧厚度的变化。通过与不同漏压下、不同宽长比的器件退化特性的实验结果对比,该模型能够准确反映器件辐射前后的漏电流特性变化,为器件的抗辐射设计提供参考依据。 相似文献
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A fully continuous compact SOI MOSFET model for circuit simulations, that automatically accounts for the for the correct body depletion condition, is presented. Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, our model accounts for the possible transitions between FD and PD behavior during the device operation 相似文献
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Iniguez B. Ferreira L.F. Gentinne B. Flandre D. 《Electron Devices, IEEE Transactions on》1996,43(4):568-575
An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C∞-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation 相似文献
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采用CoSi2 SALICIDE结构CMOS/SOI器件辐照特性的实验研究 总被引:2,自引:0,他引:2
讨论了CoSi2SALICIDE结构对CMOS/SOI器件和电路抗γ射线总剂量辐照特性的影响。通过与多晶硅栅器件对比进行的大量辐照实验表明,CoSi2SALICIDE结构不仅可以降低CMOS/SOI电路的源漏寄生串联电阻和局域互连电阻,而且对SOI器件的抗辐照特性也有明显的改进作用。 相似文献
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超高总剂量辐射下SOI MOS器件特性研究 总被引:2,自引:0,他引:2
在超高总剂量辐射下,界面电荷的改变对MOS器件的阈值电压影响将越来越显著,甚至会引起NMOS的阈值电压增加,即所谓的“反弹”现象。文章研究的SOI NMOS的阈值电压并没有出现文献中所述的“反弹”,原因可能和具体的工艺有关。另外,通过工艺器件仿真和辐射试验验证,SOI器件在超高总剂量辐射后的漏电不仅仅来自于闽值电压漂移所导致的背栅甚至前栅的漏电流,而是主要来自于前栅的界面态的影响。这样,单纯的对埋层SiO2进行加固来减少总剂量辐射后埋层SiO2中的陷阱正电荷,并不能有效提高SOI MOS器件的抗超高总剂量辐射性能。 相似文献
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Hot-carrier reliability for devices operating in radiation environment must be considered. In this paper, we investigate how total ionizing dose impacts the hot-carrier reliability of partially-depleted SOI I/O NMOSFETs, highlighting the effect of buried oxide. Firstly, radiation-induced damage on short channel SOI devices with 100 nm thick Si film was investigated. After low total dose irradiation, incomplete fully-depleted state has been formed due to the non-uniformly distributed positive charges in the buried oxide. Furthermore, as the dominated factor of hot-carrier injection, the body current reduces after irradiation. Subsequently, the irradiated SOI devices were subjected to hot-carrier stress for 9000-s long time. Compared with unirradiated devices, the irradiated samples display enhanced hot-carrier degradation. We attribute this phenomenon to that radiation lowers the barrier for hot-carrier injection. Therefore, in order to ensure the reliability of SOI devices operating in harsh radiation environments, SOI devices with higher quality or corresponding hardness design should be taken. 相似文献
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Su L.T. Antoniadis D.A. Arora N.D. Doyle B.S. Krakauer D.B. 《Electron Device Letters, IEEE》1994,15(10):374-376
A simple methodology to accurately extract constant temperature model parameters from static measurements of fully-depleted SOI MOSFET current-voltage characteristics is demonstrated. Self-heating is included in an existing physically-based, short-channel bulk MOSFET model, PCIM, by allowing the temperature to change linearly with power dissipation at each bias point. Only a simple modification of the channel bulk charge in PCIM is necessary to adapt it for SOI. The temperature dependence of the physical parameters (mobility, flatband voltage, and saturation velocity) are also fitted and included in the model. Excellent fit to experimental fully-depleted SOI data is shown over a large range of bias conditions and channel lengths. Once the static SOI data is fitted, the constant temperature model parameters appropriate for circuit simulation are easily extracted 相似文献
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Sherony M.J. Su L.T. Chung J.E. Antoniadis D.A. 《Electron Devices, IEEE Transactions on》1994,41(2):276-278
The standard bulk MOSFET definition for effective electric field is modified for SOI devices to account for nonzero electric field at the back oxide interface. The effective channel mobility in fully-depleted n-channel SOI MOSFET's is shown to be independent of applied backgate bias when the modified Eeff definition is used. The effective channel mobility as a function of Eeff is also shown to be independent of film thickness for fully-depleted devices 相似文献