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1.
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.   相似文献   

2.
Single crystalline CdTe nanowires have been synthesized using Au-catalyzed chemical vapor deposition. X-ray diffraction reveals the existence of non- negligible inhomogeneous compressive strain in the nanowires along the 〈111〉 growth direction. The effect of the strain on the electronic structure is manifested by the blue-shifted and broadened photoluminescence spectra involving shallow donor/acceptor states. Such residual strain is of great importance for a better understanding of the optical and electrical behaviors of various semiconductor nanomaterials as well as for device design and applications.  相似文献   

3.
Detection of circulating tumor cells (CTCs) plays an important role in cancer diagnosis and prognosis. In this study, aptamer-conjugated upconversion nano- particles (UCNPs) are used for the first time as nanoprobes to recognize tumor cells, which are then enriched by attaching with magnetic nanoparticles (MNPs) and placing in the presence of a magnetic field. Owing to the autofluorescence- free nature of upconversion luminescence imaging, as well as the use of magnetic separation to further reduce background signals, our technique allows for highly sensitive detection and collection of small numbers of tumor cells spiked into healthy blood samples, and shows promise for CTC detection in medical diagnostics.  相似文献   

4.
In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodo- luminescence (CL) in a scanning electron microscope (SEM). We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy (TEM). In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.  相似文献   

5.
We demonstrate the hydrothermal synthesis of long copper nanowires based on a simple protocol. We show that the purification of the nanowires is very important and can be achieved easily by wet treatment with glacial acetic acid. Fabrication of random networks of purified copper nanowires leads to flexible transparent electrodes with excellent optoelectronic performances (e.g., 55 Ω/sq. at 94% transparency). The process is carried out at room temperature and no post-treatment is necessary. Hybrid materials with the conductive polymer PEDOT:PSS show similar properties (e.g., 46 Ω/sq, at 93% transparency), with improved mechanical properties. Both electrodes were integrated in capacitive touch sensors.  相似文献   

6.
By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of -15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V.  相似文献   

7.
Repair is ubiquitous in biological systems, but rare in the inorganic world. We show that inorganic nanoscale systems can however possess remarkable repair and reconfiguring capabilities when subjected to extreme confinement. Confined crystallization inside single-walled carbon nanotube (SWCNT) templates is known to produce the narrowest inorganic nanowires, but little is known about the potential for repair of such nanowires once crystallized, and what can drive it. Here inorganic nanowires encapsulated within SWCNTs were seen by high-resolution transmission electron microscopy to adjust to changes in their nanotube template through atomic rearrangement at room temperature. These observations highlight nanowire repair processes, supported by theoretical modeling, that are consistent with atomic migration at fractured, ionic ends of the nanowires encouraged by long-range force fields, as well as release-blocking mechanisms where nanowire atoms bind to nanotube walls to stabilize the ruptured nanotube and allow the nanowire to reform. Such principles can inform the design of nanoscale systems with enhanced resilience.   相似文献   

8.
9.
A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.  相似文献   

10.
In situ low-voltage aberration corrected transmission electron microscopy (TEM) observations of the dynamic entrapment of a C60 molecule in the saddle of a bent double-walled carbon nanotube is presented. The fullerene interaction is non-covalent, suggesting that enhanced π-π interactions (van der Waals forces) are responsible. Classical molecular dynamics calculations confirm that the increased interaction area associated with a buckle is sufficient to trap a fullerene. Moreover, they show hopping behavior in agreement with our experimental observations. Our findings further our understanding of carbon nanostructure interactions, which are important in the rapidly developing field of low-voltage aberration corrected TEM and nano-carbon device fabrication.   相似文献   

11.
Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear strain-gradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics.   相似文献   

12.
The ultraviolet (UV) photoconductance properties of a single hexagonal WO3 nanowire have been studied systematically. The conductance of WO3 nanowires is very sensitive to ultraviolet B light and a field-effect transistor (FET) nanodevice incorporating a single WO3 nanowire exhibits excellent sensitivity, reversibility, and wavelength selectivity. A high photoconductivity gain suggests that WO3 nanowires can be used as the sensing element for UV photodetectors. Measurements under UV light in vacuum show that the adsorption and desorption of oxygen molecules on the surface of the WO3 nanowire can significantly influence its photoelectrical properties. The WO3 nanowires have potential applications in biological sensors, optoelectronic devices, optical memory, and other areas.   相似文献   

13.
Pb nanobridges with a thickness of less than 10 nm and a width of several hundred nm have been fabricated from single-crystalline Pb films using low-temperature molecular beam epitaxy and focus ion beam microfabrication techniques. We observed novel magnetoresistance oscillations below the superconducting transition temperature (T C ) of the bridges. The oscillations—which were not seen in the crystalline Pb films—may originate from the inhomogeneity of superconductivity induced by the applied magnetic fields on approaching the normal state, or the degradation of film quality by thermal evolution.   相似文献   

14.
We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 μA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel array, the yield of functioning transistors is dramatically increased and deviceto-device variability is reduced compared to single devices. This new nanowirebased platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes (LEDs), while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.   相似文献   

15.
We present a study of the electric field effect on electrochemically grown ultrathin, straight platinum nanowires with minimum diameter of 15 nm and length in the micrometer range, synthesized on a silicon oxide substrate between metal electrodes in H2PtCl6 solution. The influence of the concentration of the platinumcontaining acid and the frequency of the applied voltage on the diameter of the nanowires is discussed with a corresponding theoretical analysis. We demonstrate for the first time that the electric field profile, provided by the specific geometry of the metal electrodes, dramatically influences the growth and morphology of the nanowires. Finally, we provide guidelines for the controlled fabrication and contacting of straight, ultrathin metal wires, eliminating branching and dendritic growth, which is one of the main shortcomings of the current bottom-up nanotechnology. The proposed concept of self-assembly of thin nanowires, influenced by the electric field, potentially represents a new route for guided nanocontacting via smart design of the electrode geometry. The possible applications reach from nanoelectronics to gas sensors and biosensors.   相似文献   

16.
A facile biomolecule-assisted hydrothermal route followed by calcination has been employed for the preparation of monoclinic yttrium oxysulfate hollow spheres doped with other rare-earth ions (Yb3+ and Eu3+ or Er3+). The formation of hollow spheres may involve Ostwald ripening. The resulting hybrid materials were used for upconversion applications. The host crystal structure allows the easy co-doping of two different rare-earth metal ions without significantly changing the host lattice. The luminescent properties were affected by the ratio and concentration of dopant rare-earth metal ions due to energy transfer and the symmetry of the crystal field. The type of luminescent center and the crystallinity of samples were also shown to have a significant influence on the optical properties of the as-prepared products.  相似文献   

17.
We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-flee arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances makes this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.  相似文献   

18.
We investigate the charge transport in close-packed ultra-narrow (1.5 nm diameter) gold nanowires stabilized by oleylamine ligands. We give evidence of charging effects in the weakly coupled one-dimensional (1D) nanowires, monitored by the temperature and the bias voltage. At low temperature, in the Coulomb blockade regime, the current flow reveals an original cooperative multi-hopping process between 1D-segments of Au-NWs, minimising the charging energy cost. Above the Coulomb blockade threshold voltage and at high temperature, the charge transport evolves into a sequential tunneling regime between the nearest- nanowires. Our analysis shows that the effective length of the Au-NWs inside the bundle is similar to the 1D localisation length of the electronic wave function (of the order of 120 nm _+ 20 nm), but almost two orders of magnitude larger than the diameter of the nanowire. This result confirms the high structural quality of the Au-NW segments.  相似文献   

19.
Highly controlled particle-assisted growth of semiconductor nanowires has been performed for many years, and a number of novel nanowire-based devices have been demonstrated. Full control of the epitaxial growth is required to optimize the performance of devices, and gold seed particles are known to provide the most controlled growth. Successful nanowire growth from gold particles generated and deposited by various different methods has been reported, but no investigation has yet been performed to compare the effects of gold particle generation and deposition methods on nanowire growth. In this article we present a direct comparative study of the effect of the gold particle creation and deposition methods on nanowire growth characteristics and nanowire crystal structure, and investigate the limitations of the different generation and deposition methods used.   相似文献   

20.
In order to exploit the outstanding physical properties of one-dimensional (1D) nanostructures such as carbon nanotubes and semiconducting nanowires and nanorods in future technological applications, it will be necessary to organize them on surfaces with precise control over both position and orientation. Here, we use a 1D rigid DNA motif as a model for studying directed assembly at the molecular scale to lithographically patterned nanodot anchors. By matching the inter-nanodot spacing to the length of the DNA nanostructure, we are able to achieve nearly 100% placement yield. By varying the length of single-stranded DNA linkers bound covalently to the nanodots, we are able to study the binding selectivity as a function of the strength of the binding interactions. We analyze the binding in terms of a thermodynamic model which provides insight into the bivalent nature of the binding, a scheme that has general applicability for the controlled assembly of a broad range of functional nanostructures.   相似文献   

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