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用一种新型磁控溅射气体凝聚团簇源产生Mon^-团簇束,当团簇束分别在偏压为0、1、3、5、10kV的电场中加速后,沉积在室温下的P型Si(111)衬底上,获得Mo/Si(111)薄膜样品。用XRD分析表明,在室温下,偏压≤5kV团簇束沉积和常规磁控溅射沉积获得的Mo/Si(111)样品,其界面均无二硅化钼(MoSi2)生成;偏压=10kV时,团簇束沉积其界面直接有MoSi2生成。对于团簇束沉积,当偏压大于一定值时(在本实验条件下偏压≥3kV),薄膜才开始以Mo(110)择优取向生长。 相似文献
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采用分子动力学方法模拟了500~700 K温度下α-Fe中由1~50 keV的初级离位原子(PKA)引发的级联碰撞,研究了缺陷演化过程,并分析了不同阶段的PKA能量(EPKA)与缺陷存活数量(NFP)、成团率的关系以及温度对级联碰撞过程的影响,讨论了级联碰撞后产生的缺陷的取向结构,并得到以下结论:级联碰撞后产生的缺陷的原子取向与尺寸相关,可指导构建团簇、位错环等多种缺陷结构;EPKA较高时,大尺寸团簇的保留会明显提高缺陷存活数量,从而导致不同PKA能量阶段的NFP-EPKA拟合曲线指数有较大差别,温度的升高会使拟合曲线指数的变化量减小。 相似文献
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原子间相互作用势函数的精确性会影响分子动力学级联碰撞模拟结果的精确性。本文选取5种典型的金属钨势函数进行比较测试,通过分子动力学方法,用能量为10 keV和50 keV的初级碰撞原子进行级联碰撞模拟,讨论和分析了辐照过程中缺陷的产生、缺陷团簇和位错环的分布。结果表明:对于最终稳定状态下的弗兰克尔对的数目,不同势函数的模拟结果没有明显差别,而对于缺陷的空间分布、缺陷团簇分数及位错环的分布,不同势函数的模拟结果各有特点。本文结果为用于辐照级联模拟势函数的选择提供了参考,也为钨基势函数的进一步优化提供了指导。 相似文献
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团簇结构可以稳定存在于原子核的内部。研究原子核的α团簇结构及其影响在核物理与天体物理中是一个十分重要的课题。在过去几十年里,原子核的团簇结构效应在重离子核反应中有了较多的研究。本文主要总结了在核反应与相对论重离子碰撞中对原子核的α团簇结构效应的研究。例如,通过原子核的巨共振来研究原子核的团簇结构。通过核反应中的粒子(包括中子、质子以及光子)的发射与关联、集体流等研究原子核的团簇结构。进一步,我们把原子核的团簇效应延伸推广到相对论重离子碰撞中,比如,对集体流及其涨落、HBT(Hanbury Brown and Twiss)关联、多重性关联、双强子方位角关联、电磁场等的研究。 相似文献
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采用等离子体气相凝聚技术并结合差分抽气技术产生铜纳米团簇束流,然后在衬底上沉积铜纳米团簇薄膜,研究了溅射电流、氩气流量和结露区长度对其沉积速率的影响。利用X射线衍射仪和透射电子显微镜对薄膜微结构进行了表征。结果表明:保持其他参数不变的情况下,增加溅射电流和氩气流量,铜纳米团簇薄膜的沉积速率均呈现先增大后减小的趋势,而结露区长度对沉积速率的影响无明显规律,这主要归因于铜纳米团簇粒子的平均自由程变化。铜纳米团簇薄膜主要由粒径约为几纳米的团簇颗粒组成,其结晶程度较低。 相似文献
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在不同的基台脉冲负偏压下,利用微波-ECR等离子体化学气相沉积技术在单晶硅表面制备了类金刚石薄膜,利用傅立叶变换红外吸收光谱和原子力显微镜对薄膜的结构和形貌进行了表征,最后对薄膜的摩擦系数进行了测试.结果表明:制备的薄膜具有典型的含H类金刚石结构特征,薄膜致密均匀,表面粗糙度很小.随着负偏压的增大,红外光谱中2800-3000 cm-1波段的C-H伸缩振动吸收峰的强度先升高后降低,并在负偏压为200 V时达到最大;薄膜的摩擦系数而是先降低再升高,在负偏压为200 V时达到最小. 相似文献
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TIAN Canxin YANG Bing HE Jun WANG Hongjun WANG Zesong WANG Guangfu FU Dejun 《等离子体科学和技术》2011,13(1):55-60
CrTiAlN coatings were prepared by using a home-made industrial scale multi-arc ion plating system. The coatings were found to be composites of face-center-cubic CrN and TiN. The surface roughness, microhardness, and tribological properties of the films were significantly affected by the nitrogen pressure and dc-pulsed bias voltage applied to the substrate. The CrTiAlN coatings with the smoothest surfaces were obtained at optimum conditions of nitrogen pressure of 5.0 Pa and bias voltage of -200 V. The samples were found to exhibit a hardness of 2900 HV0.05 with an average friction coefficient of 0.16 and wear rate of 1.5×10-16 m3/N?m against cemented carbide. 相似文献
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采用感应耦合等离子体源(ICPS)成功地实现化学气相沉积硬质类金刚石(DLC)膜,并考察了基片负偏压对类金刚石膜沉积过程和薄膜性质的影响。薄膜的微观形貌、显微硬度、沉积速率以及结构成分分析表明感应耦合等离子体源适于制备硬质类金刚石膜,并且在相对较低的基片负偏压条件就可以获得高硬度的类金刚石膜。基片负偏压对类金刚石膜化学气相沉积过程和薄膜性质都有显著影响。 相似文献
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采用离子束辅助沉积法(Ion beam assisted deposition,IBAD)在单晶硅片上进行沉积制备了TiN/Si3N4纳米复合超硬薄膜;研究了辅助束流、轰击能量和Ti:Si靶面积比等工艺参数对TiN/Si3N4超硬纳米复合薄膜性能的影响.此外采用纳米硬度计、光电子能谱(X-ray photoelectron spectrum,XPS)和x射线衍射分析(X-raydiffraction,XRD)方法研究了纳米复合薄膜的性能、成分与组织结构;采用原子力显微镜(Atomic forcemicroscopy,AFM)分析了薄膜的表面形貌,并初步探讨了TiN/Si3N4纳米复合超硬薄膜的生长机理. 相似文献
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利用多弧离子镀技术在YT14硬质合金刀具上制备了CrTiAIN复合涂层,对不同偏压条件下CrTiAIN复合膜的表面形貌、硬度、结合性能进行了系统研究,采用X射线衍射分析技术(XRD)、扫描电子显微镜(SEM)、能谱仪(EDS)等现代材料分析技术对CrTiAIN复合涂层的微观组织结构进行了分析表征,结果表明:CrTiAIN复合涂层的主要成分为Cr、Ti、Al、N、O,相组成为Cr、CrN、Cr2N和TuN晶体相与AIN非晶相.在干式切削条件下,不同涂层刀具的切削寿命的排序依次为:CrrnAlNTiAINTiN未涂层,同时对不同涂层刀具的耐磨损特性进行了讨论分析. 相似文献
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在不同偏压下,利用多弧离子镀技术在U和Si基体上制备了Ti/TiN多层薄膜。利用X射线衍射仪和扫描电镜对多层膜的组织结构和薄膜界面形貌进行了分析。研究表明:脉冲偏压不但影响多层膜物相各衍射峰的强度,还诱导新相Ti2N的出现。制备的多层膜呈“犬牙”交错的层状、柱状结构生长。随脉冲偏压的增加,柱状晶结构细化,薄膜变得更加致密。通过50μg/gCl-溶液腐蚀研究表明:Ti/TiN多层膜提高抗腐蚀性能源于层状失效,使得腐蚀介质到达基体更加困难,抗腐蚀性能优良。 相似文献
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由离子和离子束技术形成的非晶碳膜具有良好的电绝缘性、对红外及可见光透明、硬度大、耐腐蚀等优良性质,可望在半导体器件、激光器件、太阳电池和材料保护等方面得到应用而受到重视。近年来很多作者先后报道了用未经质量分析的低能碳离子束直接沉积、离子束溅射沉积、离子镀、射频辉光放电离化碳氢化合物的等离子体沉积、经质量分析的低能碳离子束沉积等方法在单晶硅、玻璃、不锈钢等不同衬底上形成非晶碳膜的结果。碳膜的物理性质与沉积条件有密切关系,根据物理性质非晶碳膜大致可以分为三类,即导电、不透明的类石墨膜;绝缘、透明、质软的类聚合物膜;透明、绝缘、硬度大的类金刚石膜。 相似文献
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A. Anghel C. Porosnicu I. Mustata K. Sugiyama K. Krieger A. Nastuta G. Popa 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2009,267(2):426-429
In a plasma-confinement device, material eroded from plasma facing components will be transported and re-deposited at other locations inside the reaction chamber. Since beryllium from the first wall of the ITER fusion reactor will be eroded, ionized in the scrape-off layer plasma and finally re-deposited on divertor surfaces flowing along the magnetic field, it is important to study the properties of divertor armour materials (C, W) coated with beryllium.By applying different bias voltages (−200 V to +700 V) to the substrates during deposition, the morphology of the obtained films was modified. The films’ morphology was characterized by means of AFM and SEM, and it was found that the coatings prepared using negative bias voltage at the substrate during deposition are more compact and have a smoother surface compared to the samples prepared with positive bias voltage. The thickness and composition of each film were measured using Rutherford backscattering spectrometry (RBS). A study of deuterium implantation and retention into the prepared films was performed at IPP Garching in the high current ion source. 相似文献
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PANZheng-Ying WANGYue-Xia WEIQi LIZhi-Jie ZHOULiang ZHANGLiang-Kun 《核技术(英文版)》2004,15(6):321-327
This paper tries to outline the influence of atomic mobility on the initial fabrication of thin films formed by LECBD. Based on our recent studies on low-energy cluster beam deposition (LECBD) by molecular dynamics simulation, two examples, the deposition of small carbon clusters on Si and diamond surfaces and AI clusters on Ni substrate, were mainly discussed. The impact energy of the cluster ranges from 0.1 eV to 100 eV. In the former case,the mobility and the lateral migration of surface atoms, especially the recoil atoms, are enhanced with increasing the impact energy, which promote the film to be smoother and denser. For the latter case, the transverse kinetic energy of cluster atoms, caused mainly by the collision between moving cluster atoms, dominates the lateral spread of cluster atoms on the surface, which is contributive to layer-by-layer growth of thin films. Our result is consistent with the experimental observations that the film structure is strongly dependent on the impact energy. In addition, it elucidates that the atomic mobility takes a leading role in the structure characteristic of films formed by LECBD. 相似文献
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Jian-ping Jia Li-qun Shi Qing-fu Wang 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2007,263(2):446-450
Helium atoms, up to 6.9 at.%, were introduced into Al films by DC magnetron sputtering in a He/Ar mixed atmosphere and distributed evenly in it. The relation between the He/Ar flux ratio, bias voltage, substrate temperature and helium concentration is studied. The helium concentration can be easily controlled by change of the process parameters and it greatly affects the morphology of film. TEM analysis suggests that small helium bubbles with a diameter of 1 nm are formed in the grain. 相似文献