V型电致热微驱动器的力学特性分析

运用能量法推导并建立了一种V型悬臂粱电热微致动器的力学模型.利用该力学模型得到了致动器的力学特性,并且与相关的实验结果进行了对比.由理论分析和实验对比发现,用于制造该电热微致动器的多晶硅材料在微米级尺度下的热膨胀系数与温度之间不再遵循宏观状态下的线性函数关系.     

V型电致热微驱动器的力学特性分析

运用能量法推导并建立了一种V型悬臂粱电热微致动器的力学模型。利用该力学模型得到了致动器的力学特性，并且与相关的实验结果进行了对比。由理论分析和实验对比发现，用于制造该电热微致动器的多晶硅材料在微米级尺度下的热膨胀系数与温度之间不再遵循宏观状态下的线性函数关系。     

基于MEMS工艺的电热致动器研究进展

基于MEMS工艺的电热致动器具有与集成电路兼容的驱动电压、大的致动位移和致动力,比静电致动器、压电致动器和磁致动器有更大的优势,是现阶段致动方式的研究热点.高精度、高可靠度、可控和稳定性好的电热致动器是未来研究的新方向.针对MEMS微加工工艺制作的固体材料电热致动器,综述了电热致动器的结构形式、典型应用、模型建立以及测试方法的研究现状和主要研究成果.对电热致动器的结构设计、建模分析和测试技术方面的关键技术和存在的主要问题进行了分析和展望,以期为基于MEMS工艺的电热致动器的设计、分析和测试提供借鉴和参考.     

多层微悬臂梁压电薄膜致动器的静态分析

考虑缓冲层和电极层,建立了一个多层微悬臂梁压电薄膜致动器的静态模型来评估微悬臂梁的致动器的静态性能。对此模型致动器的自由端挠度和致动力进行模拟,同时将得到的结果与有限元模型结果进行对比验证模型的正确性。对比可知,理论模型与有限元模型相符。这项研究为压电致动器的结构设计和性能改善提供了帮助。     

老年人健康信息管理系统的开发与应用

从电路模型上分析多路复用技术在压电微变形镜控制中的驱动特性,设计了基于双MOSFET开关的驱动电路,并对致动器的电压保持能力和抗干扰能力做了测试.实验和分析表明,一个高压运放驱动25个压电陶瓷(PZT)致动器时,工作频率可达400 Hz,致动器的变形控制精度在2%左右.与传统控制方法相比,该方法具有低功耗、低成本的优点,适用于自适应光学系统中多通道压电微变形镜的控制.     

压电陶瓷作动器的改进Duhem迟滞建模

针对压电陶瓷作动器自身存在的迟滞特性,且在高频信号下迟滞现象更严重的问题,该文提出了一种基于单输入单输出关系建立的改进Duhem模型.根据实验测得压电陶瓷作动器输入输出数据,采用差分进化算法辨识得到作动器的参数化模型,并通过与经典Duhem模型进行对比,验证了该模型的有效性.实验结果表明,与经典Duhem模型相比,改进...     

基于双端固定梁与曲面电极的异面微致动器静态特性

为提高在微变形镜应用中静电微致动器的冲程,设计并讨论了一种基于双端固定梁为上电极、曲面电极为下电极的异面微致动器。利用Rayleigh-Ritz方法,求解了致动器的静态特性。计算过程中,考虑了梁长度增大引起的抗拉应力和器件制造过程中残余应力的影响。通过研究不同的曲面电极轮廓形状对于致动器冲程的影响,得到了500 μm长的梁在300 V的驱动电压下其冲程最大能达到14.1 μm。     

圆窗激振人工中耳压电作动器设计与实验研究

针对现有临床上所用的圆窗激振式人工中耳作动器存在的低频增益不足,与圆窗膜尺寸不匹配及初始压力不可控的问题,结合人耳解剖结构,设计了一款带有弯张放大器的新型压电作动器。为了辅助设计该作动器,建立了作动器有限元模型及作动器-人耳耦合力学模型。基于该模型,对作动器弯张放大器、支撑弹簧、耦合杆端面的关键参数进行了优化分析。通过实验对所设计的压电作动器的频响特性、总谐波失真进行测试。结果表明,所设计的压电作动器工作频带宽,低频性能优越;最大谐波失真仅为2.36%,满足助听装置清晰度要求。     

磁性液体的微致动性能

针对磁性液体在MEMS微致动器中的应用,对磁性液体在磁场中致动力的影响因素进行了理论分析。根据理论分析结果设计了一套磁性液体微致动性能测试实验台,并从磁场强度、磁性液体受力面积和磁性液体质量三个方面对其微致动性能进行实验研究。实验结果表明:磁性液体致动力与磁场强度近似呈线性关系;等量磁性液体作用面积越大,致动力越大;磁性液体致动力随磁性液体质量的增加不断增加,当磁性液体质量达到一定值时,磁性液体致动力大小趋于稳定。     

压电微致动器元件的制作及特性分析

目的是设计和制作一种新型压电微致动器,用于高密度硬盘磁头的精确定位。其中,压电元件由传统的或改进的溶胶-凝胶工艺制备并利用反应离子刻蚀成型,压电层厚度范围为0.6~3μm。采用X-射线衍射和原子力显微镜等对PZT薄膜的物相、表面形貌以及颗粒尺寸等进行分析。结果显示,随着PZT层厚度从0.6~3μm的不断增加,其内部颗粒尺寸也相应增大,粗糙度越低。此外,该微致动器的驱动机理通过多普勒干涉仪进行测量。结果表明,对于封装了3μm厚PZT元件的U型微致动器悬臂装置,在±20 V交变电压作用下,微致动位移达到1.146μm,谐振频率超过22 kHz。     

ESD电热模拟分析

在分析ESD失效机制的基础上,介绍了目前热击穿的研究情况,指出器件失效前所承受的功率与时间的关系对于研究热击穿的重要性;然后介绍了几个关于失效功率的热模型,分析了相关ESD模拟软件工具,提出一套有效的ESD模拟方法.     

Thermal time constant of a terminating type MEMS microwave power sensor

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented. An electrothermal model is introduced to simulate the thermal time constant. An analytical result, about 160 ms, of the thermal time constant from the non-stationary Fourier heat equations for the structure of the sensor is also given. The sensor measures the microwave power jumping from 15 to 20 dBm at a constant frequency 15 GHz, and the experimental thermal time constant result is 180 ms. The frequency is also changed from 20 to 10 GHz with a constant power 20 dBm, and the result is also 180 ms. Compared with the analytical and experimental results, the model is verified.     

终端式MEMS微波功率传感器的热时间常数研究

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented.An electrothermal model is introduced to simulate the thermal time constant. An analytical result,about 160 ms,of the thermal time constant from the non-stationary Fourier heat equations for the structure of the sensor is also given.The sensor measures the microwave power jumping from 15 to 20 dBm at a constant frequency 15 GHz,and the experimental thermal time constant result is 180 ms.The frequency is also changed from 20 to 10 GHz with a constant power 20 dBm,and the result is also 180 ms.Compared with the analytical and experimental results,the model is verified.     

一种大热惯性可控红外假目标材料的设计

介绍了电热膜和相变材料的势设计了一种夹层结构.建立了离散化传热模型,分别从模拟真目标的非热源部位和热源部位考虑对模型进行了分析计算,显示了夹层结构在模拟热像特征和实时性上的优势.     

Dual approach for bipolar transistor thermal impedance determination

This paper presents a dual approach for a coherent determination and validation of heterostructure bipolar transistor (HBT) thermal impedance. This study relies both on an experimental characterization method and a 3D finite element simulation approach. One section reminds briefly the experimental approach. Another describes the 3D device modeling used for the physics-based thermal simulation. Thereafter, details on the reduction method used for the numerical computation of the thermal impedance are given. As complement to pure thermal simulation, an electrothermal distributed model is proposed and gives an interpretation of the distributed effects in multi-finger devices.     

Electrochromic Switch Devices Mixing Small‐ and Large‐Sized Upconverting Nanocrystals

The hasty progress in smart, portable, flexible, and transparent integrated electronics and optoelectronics is currently one of the driving forces in nanoscience and nanotechnology. A promising approach is the combination of transparent conducting electrode materials (e.g., silver nanowires, AgNWs) and upconverting nanoparticles (UCNPs). Here, electrochromic devices based on transparent nanocomposite films of poly(methyl methacrylate) and AgNWs covered by UCNPs of different sizes and compositions are developed. By combining the electrical control of the heat dissipation in AgNW networks with size‐dependent thermal properties of UCNPs, tunable electrochromic transparent devices covering a broad range of the chromatic diagrams are fabricated. As illustrative examples, devices mixing large‐sized (>70 nm) β‐NaYF₄:Yb,Ln and small‐sized (<15 nm) NaGdF₄:Yb,Ln@NaYF₄ core@shell UCNPs (Ln = Tm, Er, Ce/Ho) are presented, permitting to monitor the temperature‐dependent emission of the particles by the intensity ratio of the Er^{3+ 2}H_11/2 and ⁴S_3/2 → ⁴I_15/2 emission lines, while externally controlling the current flow in the AgNW network. Moreover, by defining a new thermometric parameter involving the intensity ratio of transitions of large‐ and small‐sized UCNPs, a relative thermal sensitivity of 5.88% K^?1 (at 339 K) is obtained, a sixfold improvement over the values reported so far.     

Avalanche behavior of power MOSFETs under different temperature conditions

The ability of high-voltage power MOSFETs to withstand avalanche events under different temperature conditions are studied by experiment and two-dimensional device simulation.The experiment is performed to investigate dynamic avalanche failure behavior of the domestic power MOSFETs which can occur at the rated maximum operation temperature range(-55 to 150℃).An advanced ISE TCAD two-dimensional mixed mode simulator with thermodynamic non-isothermal model is used to analyze the avalanche failure mechanism.The unclamped inductive switching measurement and simulation results show that the parasitic components and thermal effect inside the device will lead to the deterioration of the avalanche reliability of power MOSFETs with increasing temperature.The main failure mechanism is related to the parasitic bipolar transistor activity during the occurrence of the avalanche behavior.     

高温红外电热膜的制备与特性研究

采用蒸镀法制备掺杂的二氧化锡电热膜,并研究了溶液成分,掺杂浓度对电热膜的电 阻、电阻温度特性以及红外辐射性能的影响,得到电阻性能稳定且发射率高的高温红外电热膜。     

电热激励微悬臂梁谐振器输出电压影响因素研究

制作了电热激励硅 /二氧化硅双层微悬臂梁谐振器。对影响谐振器输出电压的因素研究结果表明 :减小梁宽度、硅层厚度、环境气压和温度 ,可增大微悬臂梁谐振器输出电压 ;输出电压随激励功率增加而增大 ;谐振器输出电压与谐振器根部压敏电桥电源电压成正比。最后论述了提高谐振器输出电压的可行途径     

电热激励微谐振器及谐振式传感器

硅微谐振式传感器具有灵敏度和分辨率高、准数字信号输出、抗干扰能力强的优点,在精确测量领域具有独特的优势。其中,电热激励/压敏电阻拾振的微谐振器与工业IC技术兼容,可将敏感元件与信号调理电路集成在一块芯片上构成功能强大的智能传感器。着重论述了电热激励/压敏电阻拾振的硅微谐振器的几种典型结构及其制造技术,并在此基础上阐述了以该谐振器为敏感元件开发的质量流量、气体、压力、温度和接近传感器等多种谐振式传感器。