基于CORDIC算法的IIR数字滤波器硬件设计

IIR数字滤波器广泛应用于各种数字信号处理系统，本文从坐标旋转公式出发，说明了CORDIC算法的原理。并且基于CORDIC算法重构了IIR数字滤波器的实现模型，在保证性能的条件下，很大程度上减小了硬件的花费，并且通过ModelSim5．7和Synplify进行仿真综合，验证了设计的正确性和有效性。     

LMS自适应算法设计FIR,IIR数字滤波器的应用及比较

简要介绍了FIR，IIR数字滤波器的特点，在此基础上应用基于自适应模型的LMS算法对FIR，IIR数字滤波器进行了系数综合，并通过Matlab 6．5计算机仿真比较了不同抽头数时，两种类型滤波器效果的差别，给出了一些重要结论。从计算机仿真结果可以看出，当滤波器抽头数相同时，IIR滤波器具有更好的通带和阻带特性。而随着抽头数目的增加，FIR滤波器的性能可以得到很大改善。当抽头数目足够大时，两种滤波器性能趋于一致。值得指出的是，LMS算法用于FIR滤波器的计算量明显小于相同抽头数的IIR滤波器，因而收敛较快。     

基于MATLAB的数字滤波器交互界面设计

数字滤波器在数字信号处理中具有举足轻重的作用。在分析IIR数字滤波器和FIR数字滤波器设计原理的基础上,在设计过程中使用MATLAB提供的GUI工具,实现了方便用户使用的数字滤波器交互界面开发,进行应用演示,最后对IIR数字滤波器和FIR数字滤波器进行了对比分析。     

基于CycloneⅢ构成的分布式FIR滤波器设计与实现

介绍了FIR（有限冲击响应）数字滤波器的原理、结构和设计方法,运用VerilogHDL语言,在CycloneⅢ芯片（EP3C25F324C8NES）上,实现16阶分布式算法的FIR数字滤波器电路的设计。分布式算法FIR数字滤波器是基于ROM查找表,能够极大地减少硬件电路规模,实现流水线处理,提高电路的执行速度。16阶分布式算法的FIR数字滤波器所占CycloneⅢ芯片的资源小于1％,这给在同一块CycloneⅢ芯片上,实现滤波器与其它FPGA设计的综合提供了宽广的发展空间。     

IIR数字滤波器的仿真实现研究

作为改变信号频谱的算法装置,数字滤波器及其设计受到人们广泛地关注,其分为有限长冲激响应（FIR）数字滤波器和无限长冲激响应（IIR）数字滤波器。文中探究具有无限持续时间的冲击响应的IIR数字滤波器系统,并提出如何利用MATLAB软件实现仿真设计。     

基于FIR与相位补偿IIR滤波器的雷达回波信号处理

FIR与IIR频率选择滤波器的设计,被广泛应用于数字信号处理领域之中。文章以雷达回波信号的数字处理为例,首先分别设计FIR,IIR滤波器完成了对信号特定频率分量的滤除。进而,针对IIR滤波器的非线性相位,基于最优化设计全通系统实现了相位补偿,并对FIR,IIR滤波器进行了综合比较。     

数字FIR滤波器的设计与实现

数字滤波器是一种用来过滤时间离散信号的数字系统，通过对抽样数据进行数学处理来达到频域滤波的目的。根据其单位冲激响应函数的时域特性可分为两类：无限冲激响应（IIR）滤波器和有限冲激响应（FIR）滤波器。与IIR滤波器相比，FIR的实现是非递归的，它总是稳定的，更重要的是，FIR滤波器在满足幅频响应要求的同时，可以获得严格的线性相位特性。因此，它在高保真的信号处理，[第一段]     

优化FIR数字滤波器的FPGA实现

基于提高速度和减少面积的理念,对传统的FIR数字滤波器进行改良。考虑到FPGA的实现特点,研究并设计了采用Radix2的Booth算法乘法器以及结合了CSA加法器和树型结构的快速加法器,并成功应用于FIR数字滤波器的设计中。滤波器的系数由Matlab设计产生。仿真和综合结果表明,Booth算法乘法器和CSA算法加法器树,在满足FIR数字滤波器的性能要求的同时,在电路实现面积上、尤其是速度上有明显的优化;并且当数据量越多时,优化也越明显。     

采用信号处理机的数字滤波器的设计和工程实现

本文评述了无限脉冲响应(IIR)和有限脉冲响应(FIR)数字滤波器的基本设计技术,重点放在推导IIR滤波器传递函数的各种模—数变换方法,以及设计FIR滤波器的窗口法和频率取样法。接着介绍了采用递归和非递归网络结构以硬件来实现滤波算法。采用Intel 2920信号处理机来说明数字滤波的四种基本操作(输入/输出,加法/减法,乘法和单位延时)的工程实现。最后还列出了其它类似处理机的主要特性。     

数字图像空域滤波算法的FPGA设计与实现

FIR滤波器是一种常用的数字滤波器,数字图像空域滤波算法是图像预处理中常用的处理算法。结合FIR滤波器在数字图像空域滤波算法中的实际应用,研究其在实际的硬件电路设计与FPGA实现中的关键问题,并提出了如何有效缩短设计电路的关键路径和提高数据吞吐率的方法。最后在XINLINX公司的芯片Virtex-ⅡXC2V1000上设计了高速滤波器,实现了数字图像空域滤波算法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.