LiNbO3 1×2非对称电极Y分叉数字光开关的研究

文章提出一种关于非对称电极低串扰数字光开关的新型设计方案,在Y分叉后端引入S弯曲波导,通过在Y分叉处的非对称电极和弯曲波导的弯曲电极处施加一定的同步电压,实现了比没有S弯曲的开关更低的串扰.此种设计采用有限差分光束传播方法(FDBPM)来分析,模拟结果显示,在光波长为1.55 μm时,开关电压8 V,串扰＜-25 dB.     

非对称电极数字光开关

提出了一种新型的数字光开关电极结构.用两组不对称的电极作用于Z切割LiNbO3Y分叉波导上,其中一组电极从Y分叉波导的顶端就开始对波导进行作用,由于开关电极加强了对Y分叉强耦合区的作用,因此开关的串扰有了很大的降低.用光束传输法(BPM)软件模拟了该结构的性能,与对称电极结构相比,开关电压在6V左右时串扰降低了约6dB,开关电压在6～9V之间时开关串扰<-20dB.     

基于LiNbO3非对称电极1×2Y分叉数字光开关

提出了一种基于LiNbO3材料的非对称电极Y分叉数字光开关(DOS)结构.其特点是采用非对称电极结构加强锥形区和强耦合区的电极控制作用,从而提高开关的性能.计算机模拟显示,使用高于6 V的开关电压,其串扰可以压低到-26 dB左右,比对称电极结构约低8 dB,实验结果也验证了这种开关结构的可行性.在LiNbO3衬底上,通过Ti扩散波导工艺制作的样品,当开关电压为15 V时,串扰达到了-24 dB左右.     

A 1×4 Polymeric Digital Optical Switch Basedon the Thermo-Optic Effect

提出了基于热光型聚合物的集成有S弯曲光衰减器的1×4 Y分叉数字光开关. 利用开关与光纤阵列耦合用的S弯曲，将其设计成可变光衰减器，这使得器件更紧凑，并获得低串扰和大分叉角. 在小于200mW的驱动功耗下，器件串扰可低至-35dB.     

基于热光效应的1×4聚合物数字光开关

提出了基于热光型聚合物的集成有S弯曲光衰减器的1×4 Y分叉数字光开关.利用开关与光纤阵列耦合用的S弯曲,将其设计成可变光衰减器,这使得器件更紧凑,并获得低串扰和大分叉角.在小于200mW的驱动功耗下,器件串扰可低至-35dB.     

基于热光效应的1×4聚合物数字光开关

提出了基于热光型聚合物的集成有S弯曲光衰减器的1×4 Y分叉数字光开关.利用开关与光纤阵列耦合用的S弯曲,将其设计成可变光衰减器,这使得器件更紧凑,并获得低串扰和大分叉角.在小于200mW的驱动功耗下,器件串扰可低至-35dB.     

低串扰Y分叉1×2热光型数字光开关

设计了一种基于聚合物材料热光效应的1×2数字光开关(DOS)新结构。该结构将Y分叉DOS与具有引导和可变光衰减(VOA)功能的S弯曲过渡波导集成,在不增加器件结构的基础上,可大大提高开关性能,并采用填埋尖角的方法改进设计Y分叉,增大了Y分叉角度的范围,降低了工艺难度。由光束传输法(BPM)模拟表明,对于波长为1.55μm、Y分叉角度α=0.3°和计算功耗为120 mW时,该结构可实现低于-40 dB的串扰,插入损耗小于0.5 dB,具有很好的极化独立性和波谱平坦性、良好的稳定性和可重复性以及易于集成等特点。     

非对称Y分支波导结构的理论分析

对非对称Y分支进行了理论分析和计算。求解五层非对称波导正交模式,将之与波导模式结合,对两种不同形状的非对称Y分支串扰特性进行了定量分析,其结果与BPM软件模拟结果符合相当好。这种理论形式简单,应用范围大。     

1550nm低推挽电压聚合物定向耦合电光开关的设计

应用保角变换法、镜像法、耦合模理论和电光调制理论设计了一种推挽电极聚合物脊形波导定向耦合电光开关,阐述了基本结构和工作原理,给出了器件的设计和优化过程,主要分析了耦合长度、开关电压、输出光功率、插入损耗、串扰等特性. 为了实现正常的开关功能,讨论了制作公差、波谱漂移以及单模光纤耦合损耗对器件性能的影响. 模拟结果表明,所设计的开关的耦合长度为3082μm,开关电压为2.14V;插入损耗小于1.14dB,串扰小于-30dB. 与BPM仿真结果以及实验结果的对比表明,文中提出的波导和电极的理论分析与计算方法具有较高的精度和可行性.     

1550nm低推挽电压聚合物定向耦合电光开关的设计

应用保角变换法、镜像法、耦合模理论和电光调制理论设计了一种推挽电极聚合物脊形波导定向耦合电光开关,阐述了基本结构和工作原理,给出了器件的设计和优化过程,主要分析了耦合长度、开关电压、输出光功率、插入损耗、串扰等特性.为了实现正常的开关功能,讨论了制作公差、波谱漂移以及单模光纤耦合损耗对器件性能的影响.模拟结果表明,所设计的开关的耦合长度为3082μm,开关电压为2.14V;插入损耗小于1.14dB,串扰小于-30dB.与BPM仿真结果以及实验结果的对比表明,文中提出的波导和电极的理论分析与计算方法具有较高的精度和可行性.     

Y型Ti扩散LiNbO_3波导内全反射开关调制器

一、前言 电光调制器和电光开关是集成光路必不可少的器件。国外文献已先后报告了内全反射开关调制器及其开关列阵的研制工作。下面介绍我们研制的Y型Ti扩散LiNbO_3波导内全反射开关调制器。 二、器件的制作与测试结果 在z切LiNbO_3晶体上,条形波导宽8μm、波导分叉角1.5°,电极间距为6μm,宽度20μm、长6μm。器件的制作工艺是:首先在基片上热蒸发淀积40.0nm的钛膜,再用Az1350光致抗蚀剂光刻型成Y型槽型波导图形。然后进行Ti扩散,扩散温     

Polymeric digital optical modulator based on asymmetric branch

A digital optical modulator based on an asymmetric Y-branch waveguide is proposed and fabricated by using an electro-optic polymer. The operating point is initially shifted to the off-state utilising the asymmetry in the branch to provide an initial zero-state with no electrical bias. It has been confirmed that the high extinction ratio can be obtained with a low drive voltage. An extinction ratio of 25 dB is demonstrated for a drive voltage of 20V using a polymer PMMA-DR1 with r_ss of 5 pm/V at 1.3 μm     

Optimisation of LiNbO/sub 3/ BOA waveguide switches operating at 1.3 mu m

The optimisation of X-cut LiNbO/sub 3/ BOA switches for low voltage, low insertion loss operation is described. An LiNbO/sub 3/ waveguide switch operating at 1.3 mu m with an insertion loss of 4.3 dB, switching voltage of 4.7 V and extinction ratio of 21 dB is reported.<>     

Performance and modeling of advanced Ti:LiNbO3 digitaloptical switches

High-performance Y-branch digital optical switches realized in Ti:LiNbO₃ are presented. Their switching response functions have been optimized in terms of switch voltage and crosstalk ratio. The optimization is based on analyzing different types of waveguide shaping and switching arrangements using coupled mode theory and computer simulations. Excellent switching characteristics are achieved with devices exploiting a specially shaped waveguide branch in a dilated switch arrangement. Demonstrated performances include switching voltage as low as 9 V with crosstalk suppression better than 45 dB and fiber-to-fiber losses as low as 4 dB. Polarization independence with crosstalk suppression better than 40 dB over a 1520- to 1570-nm wavelength range is achieved for any applied switch voltage greater than 18 V. These optimized digital optical switches have further demonstrated the capability to reshape electrical input signals at switching rates of several hundred megahertz     

Prototype 32×32 optical switch matrix

A 32×32 optical switch matrix with a banyan network architecture is demonstrated using a Ti:LiNbO₃ waveguide. The switching voltage was 24 V and extinction ratio averaged -18 dB. The prototype device showed path dependent insertion loss deviation of 10 dB. The device can be used as a building block for many functional optical switch matrices     

基于两次衰减全反射结构的电光开关的研究

为了进一步提高电光开关的消光比,利用双面金属包覆波导激发的高阶导模是导波层折射率的灵敏函数这一特性,采用同一入射光束在波导中实现二次衰减全反射的方法,设计了一种快速响应的聚合物波导电光开关,并进行了理论分析和实验验证.得到该器件的消光比高达38dB,开关的响应时间低于110ns.结果表明,该电光开光器件具有动态范围大、驱动电压低、响应速率快、插入损耗小、器件稳定性能高以及制备工艺简单等诸多特点.这一结果对光互联、集成光路以及无线光通信等领域的应用是有帮助的.     

Wannier-Stark localization in a 1.55 μm InGaAs/InAlAssuperlattice waveguide modulator structure

The authors present an optical waveguide modulator structure based on Wannier-Stark localization in a InGaAs-InAlAs superlattice. Optical waveguide transmission below the superlattice bandgap displays expected F^-1 oscillatory behavior leading to various modulation schemes. An 11 dB extinction ratio was obtained by applying a 0.7 V drive voltage to a 100 μm long waveguide device operating at 1.55 μm under a transverse-electric (TE)-polarization mode. On-state attenuation was 5 dB. Lower open-state attenuation (3 dB) can be obtained simultaneously with a higher extinction ratio (13 dB) but in that case a larger drive voltage (1.6 V) is needed     

An InGaAs/GaAs MQW optical switch based on field-induced waveguides

A novel optical waveguide switch containing InGaAs/GaAs multiple-quantum wells (MQW) is proposed. In this structure, a large field-induced refractive index increase (0.1%) due to the quantum-confined Stark effect (QCSE) is utilized to generate electrically controllable waveguides. Switching operation of a first fabricated device has been investigated at wavelengths of about 1 μm. A crosstalk ratio of -18.8 dB and an extinction ratio of 20.9 dB was achieved at a reverse voltage of -7 V. Within an operational wavelength region of 9 nm, crosstalk was found to be less than -13 dB for both switching conditions. Further, the proposed switch structure seems to be well suited for monolithic integration with laser diodes and exhibits the potential for high-speed operation     

2×2 optical waveguide switch with bow-tie electrode based oncarrier-injection total internal reflection in SiGe alloy

Based on the total internal reflection and the plasma dispersion effect of SiGe alloy, a 2×2 intersectional rib optical waveguide switch with bow-tie electrode has been proposed and fabricated for the wavelength of 1.3-μm operation. The thickness of the SiGe layer is 2.6 μm and the width is 9 μm. The branch angle of the switch is 2° and the bow-tie angle is 1.5°. The on-state crosstalk is -19.6 dB, the off-state extinction ratio is 38.5 dB and the off-state insertion loss is less than 1.70 dB. The switching time is about 180 ns     

Efficient intensity modulation in a Ti-diffused LiNbO3 branched optical waveguide device

By careful design of the Y-junctions and bends of a Ti-diffused LiNbO3 branched waveguide modulator, an efficient intensity modulator has been realised. The halfwave voltage is 2.0 V, the extinction ratio is ?18 dB and the loss between the input and output channel waveguides is approximately 5 dB at 0.633 ?m.