Low-energy proton irradiation effects on GaAs/Ge solar cells

This paper reports the low-energy proton irradiation effects on GaAs/Ge solar cells for space use. The proton irradiation experiments were performed with a fluence of 1.2×10¹³ cm⁻², energies ranging from 0.1 to 3.0 MeV. The results obtained demonstrate that the irradiation with a proton energy of 0.3 MeV gives rise to the most degradation rates of I_sc, V_oc and P_max of the solar cells with no coverglass, which is related to the proton irradiation-induced vacancies near the pn junction in GaAs/Ge cells. The degradation rates of I_sc, V_oc and P_max of the solar cells with coverglass increase as the proton energy increases due to the cascade ions induced by collision processes. It is found that the coverglass has an obvious protection effect against the irradiation with the proton energy below 0.5 MeV.     

Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation

The degradation effects of the GaInP/GaAs/Ge triple-junction solar cells irradiated by <200 keV protons are investigated on the basis of the spectral response analysis and measurements of electric property. The experimental results show that with increasing proton fluence I_sc, V_oc and P_max decrease obviously. The proton energy exhibits an important influence on the degradation effects of the triple-junction cells dependent on the proton penetration range in the cells. As the proton energy is lower than 100 keV, irradiation-induced damage occurs in the top cell, while the irradiation with proton energy higher than 100 keV causes damage mainly in the middle sub-cells. Comparing the changes in the electrical properties of the triple-junction cells, a conclusion can be made that the GaAs middle sub-cell plays a major role in leading to more severe degradation. In this case, the 170 keV protons are suggested to be used to evaluate the performance of the GaAs triple-junction solar cells, for they can produce more severe degradation effects.     

Blue sensitizers for solar cells: Natural dyes from Calafate and Jaboticaba

Blue-violet anthocyanins from Jaboticaba (Myrtus cauliflora Mart) and Calafate (Berberies buxifolia Lam) were employed as TiO₂ dye-sensitizers. Solar cells sensitized by Jaboticaba extracts achieved up to J_sc=9.0 mA cm⁻², V_oc=0.59 V, P_max=1.9 mW cm⁻² and ff=0.54, while for Calafate sensitized cells the values determined were up to J_sc=6.2 mA cm⁻², V_oc=0.47 V, P_max=1.1 mW cm⁻² and ff=0.36. Other natural dyes were evaluated without significant photocurrent, demonstrating that only selected extracts are capable of converting sunlight in electricity. The results obtained with extracts of Jaboticaba and Calafate show a successful conversion of visible light into electricity by using natural dyes as wide band-gap semiconductor sensitizers in dye-sensitized solar cells. It also represents an environmentally friendly alternative for dye-sensitized solar cells with low cost production and an excellent system for educational purposes.     

The study on high efficient AlxGa1−xAs/GaAs solar cells

The investigation of Al_xGa_1−xAs/GaAs solar cells is carried out by means of both metalorganic chemical vapor deposition (MOCVD) and liquid-phase epitaxial (LPE) technique. The measurements of illuminated I–V characteristics, dark I–V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's laboratory. The measuring results revealed that the quality of materials in GaAs solar cell's structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also very strong. The 21.95% (AM0, 2×27 cm², 25°C) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices.     

Influence of alkyl dihalide gelators on solidification of dye-sensitized solar cells

Quasi-dye-sensitized solar cells were prepared by using ionic liquid-type electrolytes and gelators consisting of polyvinylpyridine and alkyl dihalides. Gelation occurred by the reaction of polyvinylpyridine and alkyl dihalides. When the chain length of the dihalides was varied, the short-circuit current (J_sc) increased with an increase in the chain length. However, the open-circuit voltage (V_oc) and fill factor (ff) slightly decreased. The increase in J_sc was brought about by the decrease in the interfacial resistances between the gel electrolyte and the counter electrode. In addition, the increase in the J_sc was explained by increases in the apparent diffusion coefficient of I⁻/I₃⁻ when the chain length increased. Decreases in V_oc and ff were explained by back-electron transfers from TiO₂ to iodine in the electrolytes. V_oc of the cells solidified by alkyldiiodide was lower than that solidified by alkyldichloride or alkyldibromide. It was explained by negatively shifted redox potential of I⁻/I₃⁻, compared with those for Cl⁻/Cl₂ or Br⁻/Br₂.     

On the use of triethylamine hydroiodide as a supporting electrolyte in dye-sensitized solar cells

For the first time, the application of a molten salt, triethylamine hydroiodide (THI), as a supporting electrolyte was investigated for the dye-sensitized solar cells (DSSCs). Titanium dioxide (TiO₂) electrode was modified by incorporation of high- and low-molecular weight poly(ethylene glycol) along with TiO₂ nanoparticles of two different sizes (300 nm (30 wt%) and 20 nm (70 wt%)). The highest apparent diffusion coefficient (D) of 8.12×10⁻⁶ cm² s⁻¹ was obtained for I⁻ (0.5 M of THI) from linear sweep voltammetry (LSV). Short-circuit current density (J_sc) increases with the concentration of THI whereas open-circuit potential (V_oc) remains the same. Optimum J_sc (19.28 mA cm⁻²) and V_oc (0.7 V) with a highest conversion efficiency (η) of 8.45% were obtained for the DSSC containing 0.5 M of THI/0.05 M I₂/0.5 M TBP in CH₃CN. It is also observed that the J_sc and η of the DSSC mainly relates with the D values of I⁻ and charge-transfer resistances such as R_ct1 and R_ct2 operating along Pt/TiO₂ electrolyte interface, obtained from LSV and electrochemical impedance spectroscopy (EIS). For comparison, tetraethylammonium iodide (TEAI) and LiI were also selected as supporting electrolytes. Though both the THI and TEAI have similar structures, replacement of one methyl group by hydrogen improves the efficiency of the DSSC containing the former electrolyte. Further, the DSSC containing THI exhibits higher J_sc and η than LiI (7.70%), from which it is concluded that THI may be used as an efficient and alternative candidate to replace LiI in the current research of DSSCs.     

Photovoltaic and electronic properties of quercetin/p-InP solar cells

In this work, quercetin/p-InP heterojunction solar cell has been fabricated via solution-processing method and characterized by current–voltage and capacitance–voltage measurements at room temperature. A barrier height and an ideality factor value of 0.86 eV and 3.20 for this structure in dark have been obtained from the forward bias current–voltage characteristics. From the capacitance–voltage measurement, the barrier height and free carrier concentration values for the quercetin/p-InP device have been calculated as 1.63 eV and 3.8×10¹⁷ cm⁻³, respectively. Also, series resistance calculation has been performed by using Cheung theory. The device exhibits a strong photovoltaic behavior with a maximum open circuit voltage V_oc of 0.36 V and short-circuit current I_sc of 35.3 nA under 120 lx light intensity only.     

Photovoltaic characteristics of CuInS2/CdS solar cell by electron beam evaporation

When a CuInS₂/CdS solar cell was fabricated by depositing CdS thin film with dopant In of 1.0 at% on ternary compound CuInS₂ thin film with the lowest resistivity of 5.59 × 10⁻² Ωcm, its best result was as follows: V_oc = 461 mV, I_sc = 26.9 mA, FF = 0.685, η = 5.66% under the illumination of 100 mW/cm². And its series resistance and lattice mismatch was 5.1 Ω and 3.2%, respectively.Besides, a 4 layer structure solar cell of -CuInS₂/high -CuInS₂/high -CdS/low - CdS has been fabricated. When thickness of high - CuInS₂ was 0.2 μm, its best result was as follows: V_oc = 580 mV, I_sc = 30.6 mA, FF = 0.697, η = 8.25%. An its series resistance and lattice mismatch were 4.3 Ω and 2.8%, respectively.     

Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells

Dye-sensitized solar cells based on nanoporous oxide semiconductor thin films such as TiO₂, Nb₂O₅, ZnO, SnO₂, and In₂O₃ with mercurochrome as the sensitizer were investigated. Photovoltaic performance of the solar cell depended remarkably on the semiconductor materials. Mercurochrome can convert visible light in the range of 400–600 nm to electrons. A high incident photon-to-current efficiency (IPCE), 69%, was obtained at 510 nm for a mercurochrome-sensitized ZnO solar cell with an I⁻/I₃⁻ redox electrolyte. The solar energy conversion efficiency under AM1.5 (99 mW cm⁻²) reached 2.5% with a short-circuit photocurrent density (J_sc) of 7.44 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.52 V, and a fill factor (ff) of 0.64. The J_sc for the cell increased with increasing thickness of semiconductor thin films due to increasing amount of dye, while the V_oc decreased due to increasing of loss of injected electrons due to recombination and the rate constant for reverse reaction. Dependence of photovoltaic performance of mercurochrome-sensitized solar cells on semiconductor particles, light intensity, and irradiation time were also investigated. High performance of mercurochrome-sensitized ZnO solar cells indicate that the combination of dye and semiconductor is very important for highly efficient dye-sensitized solar cells and mercurochrome is one of the best sensitizers for nanoporous ZnO photoelectrode. In addition, a possibility of organic dye-sensitized oxide semiconductor solar cells has been proposed as well as one using metal complexes.     

Photovoltaic effect in single-layer organic solar cell devices fabricated with two new imidazolin-5-one molecules

Organic solar cells were fabricated with two new imidazolin-5-one molecules as active layers. The use of imidazolin-5-ones, derivatives of a biomolecule chromophore, for photovoltaic applications is particularly attractive due to its biodegradable nature and tunable properties. Single-layer devices with two analogues of imidazolin-5-ones were prepared and characterized. Devices fabricated with one of the molecules as the active layer showed a maximum J_sc of 0.52 μA cm⁻² and V_oc of 0.68 V at an incident power of 20.32 mW cm⁻², while the other set of devices showed a maximum J_sc of 0.63 μA cm⁻² and V_oc of 0.57 V at the same incident power.     

Influence of pyrazole derivatives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized TiO2 solar cell performance

The influence of pyrazole additives in an I⁻/I₃⁻ redox electrolyte solution on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics of the cell were measured using 18 different pyrazole derivatives. All of the pyrazole additives enhanced the open-circuit photovoltage (V_oc) and the solar energy conversion efficiency (η), but reduced the short-circuit photocurrent density (J_sc). Most of the pyrazoles improved fill factor (ff). The physical and chemical properties of the pyrazoles were computationally calculated in order to elucidate the reasons for the additive effects on cell performance. The greater the partial charge of the nitrogen atom at position 2 in the pyrazole group, the larger the V_oc, but the smaller the J_sc values. As the dipole moment of the pyrazole derivatives increased, the V_oc value increased, but the J_sc value decreased. The V_oc of the cell also increased as the ionization energy of the pyrazoles decreased. These results suggest that the electron donicity of the pyrazole additives affected the interaction with the nanocrystalline TiO₂ photoelectrode, the I⁻/I₃⁻ electrolyte, and the acetonitrile solvent, which changed the Ru(II)-dye-sensitized solar cell performance.     

Influence of alkylaminopyridine additives in electrolytes on dye-sensitized solar cell performance

The influence of alkylaminopyridine additives on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell with an I⁻/I₃⁻ redox electrolyte in acetonitrile was studied. The current–voltage characteristics were measured for more than 20 different alkylaminopyridines under AM 1.5 (100 mW/cm²). The alkylaminopyridine additives tested had varying effects on the performance of the cell. All the additives decreased the short circuit photocurrent density (J_sc), but increased the open-circuit photovoltage (V_oc) of the solar cell. Molecular orbital calculations imply that the dipole moment of the alkylaminopyridine molecules influences the J_sc of the cell and that the size, solvent accessible surface area, and ionization energy all affect the V_oc of the cell. The highest V_oc of 0.88 V was observed in an electrolyte containing 4-pyrrolidinopyridine, which is comparable to the maximum V_oc of 0.9 V for a cell consisting of TiO₂ electrode and I⁻/I₃⁻ redox system.     

Preparation and properties of CdS/CdTe thin film solar cell produced by periodic pulse electrodeposition technique

CdS/CdTe solar cells have been prepared by periodic pulse electrodepositionmethod. 10.8% efficient cell was made with open circuit voltage (V_oc)≈753mV, short-circuit current (J_sc)≈23.6 mA/cm² and fill factor (FF)≈0.61. Current-voltage-temperature measurments showed the variation of ideality factor (A) from 1.88 at 344 K to 4.49 at 202 K whereas voltage factor (α) was almost constant above 276 K. The junction transport is possibly dominated by a tunneling mechanism. Capacitance measurements gave the value of diffusion potential as 1.2 eV, ionized charged density as 5.9 × 10¹⁵ cm⁻³ and number of interface states (N_IS) as 2.8 × 10¹¹ cm⁻² eV⁻¹ at zero volt bias. Measurements of open circuit voltage (V_oc) with temperature gave the value of barrier height as 1.42 eV.     

Influence of alkylpyridine additives in electrolyte solution on the performance of dye-sensitized solar cell

The influence of alkylpyridines additive to an I⁻/I₃⁻ redox electrolyte in acetonitrile on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell was studied. I–V measurements were performed using more than 30 different alkylpyridines. The alkylpyridine additives showed a significant influence on the performance of the cell. All the additives decreased the short-circuit photocurrent (J_sc), but most of the alkylpyridines increased the open-circuit photovoltage (V_oc) and fill factor (ff) of the solar cell. The results of the molecular orbital calculations suggest that the dipole moment of the alkylpyridine molecules correlate with the J_sc of the cell. These results also suggest that both the size and ionization energy of pyridines correlate with the V_oc of the cell. Under AM 1.5 (100 mW/cm²), the highest solar energy conversion efficiency (η) of 7.6% was achieved by using 2-propylpyridine as an additive, which was more effective than the previously reported additive, 4-t-butylpyridine.     

Polycrystalline silicon solar cells with V-grooved surface

Mechanical grooving techniques are effective to uniform reduction of surface reflectance over all polycrystalline silicon solar cells. Furthermore, to reduce the surface reflectance, a V-shaped grooving technique was newly examined. To improve the short-circuit current (I_sc) and the open-circuit voltage (V_oc), a shallow n⁺/p junction was also examined for the grooved surface. By forming the shallower junction, both I_sc and V_oc remarkably increased. Consequently, a record high conversion efficiency of 17.2% has been confirmed at Japan Quality Assurance Organization (JQA) for a 10 × 10 cm² area polycrystalline silicon solar cell.     

Radiation resistant AlGaAs/GaAs concentrator solar cells with internal Bragg reflector

The problem of increasing efficiency, reliability and radiation resistance of solar cells based on AlGaAs/GaAs heterostructures can be solved by using an internal Bragg reflector. The Bragg reflector as a back surface reflector and as a back surface potential barrier which allows to conserve the high photosensitivity in the long- and middle-wavelength parts of the spectrum after electron and proton irradiation. The effect of base doping and base thickness on the radiation resistance of AlGaAs/GaAs solar cells with the internal Bragg reflector has been investigated. Concentrator solar cells efficiency and related parameters before and after 3 MeV electron irradiation at the fluence up to 3×10¹⁵ cm⁻² are represented. A base doping level of 1×10¹⁵ cm⁻³ and base thickness in the range 1.1–1.6 μm give an EOL AM0 efficiency of 15.8% (BOL–22%) at 30 Suns concentration after exposure to 1×10¹⁵ cm⁻² electron fluence. This EOL efficiency is among the highest reported for GaAs single-junction concentrator cells under AM0 conditions. Making the base doping level lower and the base thinner allows retaining a j_EOL/j_BOL ratio of 0.96 upon exposure up to 3×10¹⁵e/cm² 3 MeV electron fluence. These results are additionally supported by the modeling calculations of the relative damage coefficient.     

p-doped μc-Si:H window layers prepared by hot-wire CVD for amorphous solar cell application

We report on boron-doped μc-Si:H films prepared by hot-wire chemical vapor deposition (HWCVD) using silane as a source gas and trimethylboron (TMB) as a dopant gas and their incorporation into all-HW amorphous silicon solar cells. The dark conductivity of these films was in the range of 1–10 (Ω cm)⁻¹. The open circuit voltage V_oc of the solar cells was found to decrease from 840 mV at low hydrogen dilution H-dil=91% to 770 mV at high H-dil =97% during p-layer deposition which can be attributed to the increased crystallinity at higher H-dil and to subsequent band edge discontinuity between μc-Si:H p- and amorphous i-layer. The short circuit current density J_sc and the fill factor FF show an optimum at an intermediate H-dil and decrease for the highest H-dil. To improve the conversion efficiency and the reproducibility of the solar cells, an amorphous-like seed layer was incorporated between TCO and the bulk p-layer. The results obtained until now for amorphous solar cells with and without the seed layer are presented. The I–V parameters for the best p–i–n solar cell obtained so far are J_sc=13.95 mA/cm², V_oc=834 mV, FF=65% and η=7.6%, where the p-layers were prepared with 2% TMB. High open circuit voltages up to 847 mV could be achieved at higher TMB concentrations.     

Effect of proton irradiation on electrical properties of CuInSe2 thin films

High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe₂ (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (0 0 1) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1×10¹³ cm⁻², the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm⁻¹. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300 K. From the temperature dependence of the carrier concentration in CIS thin films, we found N_D=9.5×10¹⁶ cm⁻³, N_A=3.7×10¹⁶ cm⁻³ and E_D=21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and N_T=1×10¹⁷ cm⁻³ for a fluence of 3×10¹³ cm⁻², N_T=5.7×10¹⁷ cm⁻³ for a fluence of 1×10¹⁴ cm⁻² and E_T=95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.     

Effect of a redox electrolyte in mixed solvents on the photovoltaic performance of a dye-sensitized solar cell

The effect of the iodide/triiodide redox electrolyte in various organic solvents on the photoelectrochemical properties of bis(tetrabutylammonium) cis-bis(thiocyanato)bis(4-carboxy-2,2′-bipyridine-4′-carboxylato)ruthenium(II)-sensitized nanocrystalline TiO₂ solar cells was studied. Solvents with large donor numbers dramatically enhanced the open-circuit voltage (V_oc), but usually reduced the short-circuit photocurrent density (J_sc). For a mixed solvent of tetrahydrofuran (THF) and acetonitrile, V_oc increased and the fill factor decreased with increasing THF concentration, but J_sc remained relatively constant. As the partial charge of the N or O atom of the solvent molecule increased, V_oc increased, but J_sc was unchanged up to a certain value of the partial charge (for THF, −0.46). For cells using 0.3 M 4-tert-butylpyridine and 20 vol% THF in the electrolyte, a short-circuit photocurrent density of 18.23 mA cm⁻², an open-circuit voltage of 0.73 V, a fill factor of 0.73, and an overall conversion efficiency of 9.74% were obtained.     

n-GaAlAs on p-GaAs heterostructure solar cells grown by molecular beam epitaxy

p-GaAs substrate was used as the starting material in molecular beam epitaxial growth. n-type GaAlAs for heterostructure and n-GaAs capping layer were then grown after a buffer layer deposition on the substrate. The n-GaAlAs on p-GaAs heterostructure solar cells, with active area of 13.25 mm² under 100 mW/cm² AM1 illumination light source, provide a typical output as follows: V_oc=0.73 V, I_sc=6 mA, FF=0.7 and η=23% (active area). Spectral response measurements from 500 to 850 nm reflects the window effect of GaAlAs and band edge of GaAs materials.