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1.
CdTe epilayers are grown by metalorganic chemical vapor deposition (MOCVD) on bulk HgCdTe crystals with x ~ 0.22 grown by
the traveling heater method (THM). The THM HgCdTe substrates are (111) oriented and the CdTe is grown on the Te face. The
metalorganic sources are DMCd and DETe, and the growth is performed at subatmospheric pressure. Ultraviolet (UV) photon-assisted
hydrogen radicals pretreatment plays a dominant role in the electrical properties of the resulting heterostructures. The requirements
of a good passivation for HgCdTe photodiodes vis-a-vis the passivation features of CdTe/HgCdTe heterostructures are discussed.
The effect of valence band offset and interface charges on the band diagrams of p-isotype CdTe/HgCdTe heterostructures, for
typical doping levels of the bulk HgCdTe substrates and the MOCVD grown CdTe, is presented. Electrical properties of the CdTe/HgCdTe
passivation are determined by capacitance-voltage and current-voltage characteristics of metal-insulator-semiconductor test
devices, where the MOCVD CdTe is the insulator. It is found that the HgCdTe surface is strongly inverted and the interface
charge density is of the order of 1012cm2 when the CdTe epilayer is grown without the UV pretreatment. With the in-situ UV photon-assisted hydrogen radicals pretreatment,
the HgCdTe surface is accumulated and the interface charge density is -4. 1011 cm-2. 相似文献
2.
S. M. Johnson A. A. Buell M. F. Vilela J. M. Peterson J. B. Varesi M. D. Newton G. M. Venzor R. E. Bornfreund W. A. Radford E. P. G. Smith J. P. Rosbeck T. J. De Lyon J. E. Jensen V. Nathan 《Journal of Electronic Materials》2004,33(6):526-530
The heteroepitaxial growth of HgCdTe on large-area Si substrates is an enabling technology leading to the production of low-cost,
large-format infrared focal plane arrays (FPAs). This approach will allow HgCdTe FPA technology to be scaled beyond the limitations
of bulk CdZnTe substrates. We have already achieved excellent mid-wavelength infrared (MWIR) and short wavelength infrared
(SWIR) detector and FPA results using HgCdTe grown on 4-in. Si substrates using molecular beam epitaxy (MBE), and this work
was focused on extending these results into the long wavelength infrared (LWIR) spectral regime. A series of nine p-on-n LWIR
HgCdTe double-layer heterojunction (DLHJ) detector structures were grown on 4-in. Si substrates. The HgCdTe composition uniformity
was very good over the entire 4-in. wafer with a typical maximum nonuniformity of 2.2% at the very edge of the wafer; run-to-run
composition reproducibility, realized with real-time feedback control using spectroscopic ellipsometry, was also very good.
Both secondary ion mass spectrometry (SIMS) and Hall-effect measurements showed well-behaved doping and majority carrier properties,
respectively. Preliminary detector results were promising for this initial work and good broad-band spectral response was
demonstrated; 61% quantum efficiency was measured, which is very good compared to a maximum allowed value of 70% for a non-antireflection-coated
Si surface. The R0A products for HgCdTe/Si detectors in the 9.6-μm and 12-μm cutoff range were at least one order of magnitude below typical
results for detectors fabricated on bulk CdZnTe substrates. This lower performance was attributed to an elevated dislocation
density, which is in the mid-106 cm−2 range. The dislocation density in HgCdTe/Si needs to be reduced to <106 cm−2 to make high-performance LWIR detectors, and multiple approaches are being tried across the infrared community to achieve
this result because the technological payoff is significant. 相似文献
3.
开展了CdTe/ZnS双层钝化碲镉汞长波探测器制备的研究。CdTe钝化膜经退火热处理后,可实现CdTe/MCT界面的互扩散,并改善CdTe钝化膜的质量。通过全湿法腐蚀方法完成了金属化开口,制备了长波碲镉汞600×18@15 μm规格线列和640×512@15 μm规格面阵。线列I-V测试表明:CdTe/ZnS双层钝化膜能有效地减少长波碲镉汞器件的表面漏电流,器件的反向结特性良好。面阵在77K测试:NETD 26.7 mK,有效像元率95.4%,并对室温目标进行了凝视成像。测试过程出现了4%左右由噪声引起的零散盲元,是由芯片面阵局部钝化失效引起的,表明钝化膜沉积工艺及芯片加工工艺尚有改进的空间。 相似文献
4.
Characterization of CdTe for HgCdTe surface passivation 总被引:2,自引:0,他引:2
L. O. Bubulac W. E. Tennant J. Bajaj J. Sheng R. Brigham A. H. B. Vanderwyck M. Zandian W. V. Mc Levige 《Journal of Electronic Materials》1995,24(9):1175-1182
The objectives of this work are to study the physical and chemical structure of CdTe films using secondary ion mass spectrometry
(SIMS) and atomic force miroscopy (AFM) and to demonstrate the usefulness of these analytical techniques in determining the
characteristics of CdTe-passivation films deposited by different techniques on HgCdTe material. Three key aspects of CdTe
passivation of HgCdTe are addressed by different analytical tools: a) morphological microstructure of CdTe films examined
by atomic force microscopy; b) compositional profile across the interface determined by Matrix (Te)—SIMS technique; c) concentration
of various impurities across the CdTe/HgCdTe structure profiled by secondary ion-mass spectrometry. 相似文献
5.
S. Velicu G. Badano Y. Selamet C. H. Grein J. P. Faurie S. Sivananthan P. Boieriu Don Rafol R. Ashokan 《Journal of Electronic Materials》2001,30(6):711-716
Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from
thermal generation and recombination processes. Although the need for cooling has long been thought to be fundamental and
inevitable, it has been recently suggested that Auger recombination and generation rates can be reduced by using the phenomena
of exclusion and extraction to produce nonequilibrium carrier distributions. The devices with Auger suppressed operation requires
precise control over the composition, and donor and acceptor doping. The successful development of the molecular beam epitaxy
(MBE) growth technique for multi-layer HgCdTe makes it possible to grow these device structures. Theoretical calculations
suggest that the p n+ layer sequence is preferable for near-room temperature operation due to longer minority carrier lifetime
in lightly doped p-HgCdTe absorber layers. However, because the low doping required for absorption and nonequilibrium operation
is easier to achieve in n-type materials, and because Shockley-Read centers should be minimized in order to obtain the benefits
of Auger suppression, we have focused on p+ n structures. Planar photodiodes were formed on CdTe/Si (211) composite substrates by As implantation followed by a three
step annealing sequence. Three inch diameter Si substrates were employed since they are of high quality, low cost, and available
in large areas. Due to this development, large area focal plane arrays (FPAs) operated at room temperature are possible in
the near future. The structures were characterized by FTIR, x-ray diffraction, temperature dependent Hall measurements, minority
carrier lifetimes by photoconductive decay, and in-situ ellipsometry. To study the relative influence of bulk and surface
effects, devices with active areas from 1.6 10−5 cm2 to 10−3 cm2 were fabricated. The smaller area devices show better performance in terms of reverse bias characteristics indicating that
the bulk quality could be further improved. At 80 K, the zero bias leakage current for a 40 m 40 m diode with 3.2 m cutoff
wavelength is 1 pA, the R0A product is 1.1 104-cm2 and the breakdown voltage is in excess of 500 mV. The device shows a responsivity of 1.3 107 V/W and a 80 K detectivity of 1.9 1011 cm-Hz1/2/W. At 200 K, the zero bias leakage current is 5 nA and the R0A product 2.03-cm2, while the breakdown voltage decreases to 40 mV. 相似文献
6.
The type III band alignment of HgTe/CdTe superlattices leads to the interesting possibility of achieving very long wavelength
infrared (VLWIR) (15 μm and longer) cutoff wavelengths with either normal (HgTe layer thickness less than about 70 ? for CdTe
layer thickness of 50 ?) or inverted (HgTe thickness greater than about 70 ?) band structures. The inverted band structure
superlattices promise even greater cutoff wavelength control than the normal band structure ones. However, the electronic
band gaps of inverted band structure superlattices are substantially less than their optical band gaps, leading to large thermal
carrier concentrations even at temperature as low as 40 K. These high carrier concentrations in turn give rise to more rapid
Auger recombination than normal band structure superlattices with the same cutoff wavelengths. We conclude that the highest
performance is expected from VLWIR HgTe/CdTe superlattice-based detectors with normal band structure absorber layers. 相似文献
7.
E. P. G. Smith E. A. Patten P. M. Goetz G. M. Venzor J. A. Roth B. Z. Nosho J. D. Benson A. J. Stoltz J. B. Varesi J. E. Jensen S. M. Johnson W. A. Radford 《Journal of Electronic Materials》2006,35(6):1145-1152
High-performance 20-μm unit-cell two-color detectors using an n-p+-n HgCdTe triple-layer heterojunction (TLHJ) device architecture grown by molecular beam epitaxy (MBE) on (211)-oriented CdZnTe
substrates with midwavelength (MW) infrared and long wavelength (LW) infrared spectral bands have been demonstrated. Detectors
with nominal MW and LW cut-off wavelengths of 5.5 μm and 10.5 μm, respectively, exhibit 78 K LW performance with >70 % quantum
efficiency, reverse bias dark currents below 300 pA, and RA products (zero field of view, 150-mV bias) in excess of 1×103 Ωcm2. Temperature-dependent current-voltage (I–V) detector measurements show diffusion-limited LW dark current performance extending
to temperatures below 70 K with good operating bias stability (150 mV ± 50 mV). These results reflect the successful implementation
of MBE-grown TLHJ detector designs and the introduction of advanced photolithography techniques with inductively coupled plasma
(ICP) etching to achieve high aspect ratio mesa delineation of individual detector elements with benefits to detector performance.
These detector improvements complement the development of high operability large format 640×480 and 1280×720 two-color HgCdTe
infrared focal plane arrays (FPAs) to support third generation forward looking infrared (FLIR) systems. 相似文献
8.
Progress in MOVPE of HgCdTe for advanced infrared detectors 总被引:1,自引:0,他引:1
This paper reviews the significant progress made over the past five years in the development of metalorganic vapor phase epitaxy
(MOVPE) for the in situ growth of HgCdTe p-n junction devices for infrared detector arrays. The two basic approaches for MOVPE growth of HgCdTe,
the interdiffused multilayer process (IMP), and direct alloy growth (DAG) are compared. The paper then focuses on the progress
achieved with the IMP approach on lattice-matched CdZnTe substrates. The benefits of the precursors ethyl iodide (EI) and
tris-dimethylaminoarsenic (DMAAs) for controlled iodine donor doping and arsenic acceptor doping at dopant concentrations relevant
for HgCdTe junction devices are summarized along with the electrical and lifetime properties of n-type and p-type HgCdTe films
grown with these precursors. The relative merits of the two CdZnTe substrate orientations we have used, the (211)B and the
(100) with 4°–8° misorientation are compared, and the reasons why the (211)B is preferred are discussed. The growth and repeatability
results, based on secondary ion mass spectrometry analysis, are reported for a series of double-heterojunction p-n-N-P dual-band
HgCdTe films for simultaneous detection in the 3–5 μm and 8–10 μm wavelength bands. Finally, the device characteristics of
MOVPE-IMP in situ grown p-on-n heterojunction detectors operating in the 8–12 μm band are reviewed and compared with state-of-the-art liquid
phase epitaxial grown devices. 相似文献
9.
T. Nguyen C. A. Musca J. M. Dell J. Antoszewski L. Faraone 《Journal of Electronic Materials》2004,33(6):621-629
The fabrication of HgCdTe photodiodes using plasma-induced p-to-n type conversion for junction formation shows promise in
improving array uniformity and device yields in comparison to more traditional fabrication technologies. Previously, characterization
and analysis of the diode current-voltage (I–V) characteristics of fabricated devices have given indications that surface-leakage
current mechanisms are limiting device performance. To further investigate the effectiveness of the surface passivation employed
in the fabrication process, gated-diode structures have been fabricated. The gated-diode structure enables the semiconductor
surface potential to be varied, thus allowing the characteristics of surface-leakage currents and their effect on device performance
to be evaluated. The long wavelength infrared (LWIR) HgCdTe gated photodiodes used in this study have been characterized using
I–V measurements for variable gate-bias voltage and variable temperature. Analysis of the experimental results indicates that
plasma-induced type conversion produces an n (lightly doped)-on-p junction that is highly susceptible to a trapped positive
charge in the passivation layer, which results in increased surface-tunneling currents. Modeling of the various dark-current
mechanisms is used to show the effect on dark-current generation of the surface band bending induced by variations in surface
potential. In addition, temperature-dependent I–V measurements and analysis have also been conducted. 相似文献
10.
R. Pal A. Malik V. Srivastav B. L. Sharma V. Dhar B. Sreedhar H. P. Vyas 《Journal of Electronic Materials》2006,35(10):1793-1800
A compositionally graded CdTe-Hg1−xCdxTe interface was created by deposition of CdTe on p-HgCdTe and subsequent annealing. The compositionally graded layer between
CdTe and HgCdTe was formed by an interdiffusion process and was used for passivation. The composition gradient (Δx) in the
interfacial region and the width of the graded region were tailored by adopting a suitable annealing procedure. The effect
of process conditions on the interfacial profile and photoelectric properties such as lifetime and surface recombination velocity
was studied in detail. Surface recombination velocity of the p-HgCdTe could be reduced to the level of 3,000 cm/s at 77 K,
which represents very good passivation characteristics. The passivation layer formed by this method can be used for the fabrication
of high performance and stable modern infrared detectors. Thus, a passivation process is developed, which is simple, effective,
reproducible, and compatible with the HgCdTe device fabrication and packaging processes. 相似文献
11.
通过介质膜ZnS、CdTe薄膜材料的Ar^ 束溅射沉积研究,结合HgCdTe器件工艺,成功制备了以ZnS、CdTe双层介质膜为绝缘层的HgCdTe MIS器件;通过对器件的C-V特性实验分析,获得了CdTe/HgCdTe界面电学特性参数。实验表明:溅射沉积介质膜CdTe ZnS对HgCdTe的表面钝化已经可以满足HgCdTe红外焦麦面器件表面钝化的各项要求。 相似文献
12.
MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress 总被引:3,自引:0,他引:3
T. J. de Lyon J. E. Jensen M. D. Gorwitz C. A. Cockrum S. M. Johnson G. M. Venzor 《Journal of Electronic Materials》1999,28(6):705-711
We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared
detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabrication
of high performance, large-area HgCdTe infrared focal-plane arrays on Si substrates. A key element of this heteroepitaxial
approach has been development of high quality CdTe buffer layers deposited on Si(112) substrates. We review the solutions
developed by several groups to address the difficulties associated with the CdTe/Si(112) heteroepitaxial system, including
control of crystallographic orientation and minimization of defects such as twins and threading dislocations. The material
quality of HgCdTe/Si and the performance of HgCdTe detector structures grown on CdTe/Si(112) composite substrates is reviewed.
Finally, we discuss some of the challenges related to composition uniformity and defect generation encountered with scaling
the MBE growth process for HgCdTe to large-area Si substrates. 相似文献
13.
A method for generating the composition profiles of compound semiconductor multilayer structures while growth and composition
dependent interdiffusion are simultaneously occurring is developed. The following composition dependent interdiffusion coefficient
for HgCdTe was determined:
DHg
1-xCdx(μm2/sec) = 3.15 × 1010 · 103.53x · exp(−2.24 × 104/K)
Model profiles compare favorably with experimental profiles for HgCdTe multilayer structures prepared from 180° C to 550°
C by VPE, LPE, MOCVD, and UHV methods. At high temperatures, the shape of the experimental profiles are determined by interdiffusion.
Because at lower temperatures experimental data is characteristic of the profiling technique, model profiles are convoluted
with the resolution of the measurement technique (i.e., scanning and sputter Auger and sputter XPS) to extract the actual
profiles from the data. 相似文献
14.
15.
Bake stability of long-wavelength infrared HgCdTe photodiodes 总被引:2,自引:0,他引:2
A. Mestechkin D. L. Lee B. T. Cunningham B. D. Mac Leod 《Journal of Electronic Materials》1995,24(9):1183-1187
The bake stability was examined for HgCdTe wafers and photodiodes with CdTe surface passivation deposited by thermal evaporation.
Electrical and electrooptical measurements were performed on various long-wavelength infrared HgCdTe photodiodes prior to
and after a ten-day vacuum bakeout at 80°C, similar to conditions used for preparation of tactical dewar assemblies. It was
found that the bakeout process generated additional defects at the CdTe/ HgCdTe interface and degraded photodiode parameters
such as zero bias impedance, dark current, and photocurrent. Annealing at 220°C under a Hg vapor pressure following the CdTe
deposition suppressed the interface defect generation process during bakeout and stabilized HgCdTe photodiode performance. 相似文献
16.
Hg1-xCdxTe is an important material for infrared (IR) detection applications where the bandgap of the alloy varies from semimetal
to 1.4 eV. The large variation in bandgap energy with HgCdTe composition causes difficulty in controlling detector-cutoff
wavelength, particularly for the long-wavelength IR and very-long-wavelength infrared (VLWIR, greater than 12 μm) spectral
bands. Our ability to control the HgCdTe composition and compositional profile during growth by molecular beam epitaxy (MBE)
is improved significantly by using automated feedback control from spectroscopic ellipsometry (SE) measurements, where the
standard deviation in the error in composition has improved by a factor of 5, from σ=0.0081 to σ=0.0016. To improve our ability
to predict cutoff wavelength from IR transmission measurements, we have used a model of the absorption in HgCdTe to revise
our past empirical cutoff relationship to include the effect of compositional grading. We have achieved a mean detector-cutoff
wavelength of 14.1 μm and standard deviation of σ=0.25 μm for a series of 19 processed layers with a target cutoff of 14 μm.
The excellent control in VLWIR detector cutoff we have observed is attributed to automated compositional control and an improved
cutoff-prediction model. 相似文献
17.
Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications 总被引:1,自引:0,他引:1
T. J. de Lyon R. D. Rajavel J. A. Vigil J. E. Jensen O. K. Wu C. A. Cockrum S. M. Johnson G. M. Venzor S. L. Bailey I. Kasai W. L. Ahlgren M. S. Smith 《Journal of Electronic Materials》1998,27(6):550-555
Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance
at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. The detector structures are grown on Si via
CdTe(112)B buffer layers, whose structural properties include x-ray rocking curve full width at half maximum of 63 arc-sec
and near-surface etch pit density of 3–5 × 105 cm−2 for 9 μm thick CdTe films. HgCdTe p+-on-n device structures were grown by molecular beam epitaxy (MBE) on both bulk CdZnTe and Si with 125K cutoff wavelengths
ranging from 3.5 to 5 μm. External quantum efficiencies of 70%, limited only by reflection loss at the uncoated Si-vacuum
interface, were achieved for detectors on Si. The current-voltage (I-V) characteristics of MBE-grown detectors on CdZnTe and
Si were found to be equivalent, with reverse breakdown voltages well in excess of 700 mV. The temperature dependences of the
I-V characteristics of MBE-grown diodes on CdZnTe and Si were found to be essentially identical and in agreement with a diffusion-limited
current model for temperatures down to 110K. The performance of MBE-grown diodes on Si is also equivalent to that of typical
liquid phase epitaxy-grown devices on CdZnTe with R0A products in the 106–107 Θ-cm2 range for 3.6 μm cutoff at 125K and R0A products in the 104–105 Θ-cm2 range for 4.7 μm cutoff at 125K. 相似文献
18.
Defect modeling studies in HgCdTe and CdTe 总被引:1,自引:0,他引:1
We have used a quasichemical formalism to calculate the native point defect densities in x = 0.22 Hg1−xCdxTe and CdTe. The linearized muffin-tin orbital method, based on the local density approximation and including gradient corrections,
has been used to calculate the electronic contribution to the defect reaction free energies, and a valence force field model
has been used to calculate the changes to the vibration free energy when a defect is created. We find the double acceptor
mercury vacancy is the dominant defect, in agreement with previous interpretations of experiments. The tellurium antisite,
which is a donor, is also found to be an important defect in this material. The mercury vacancy tellurium antisite pair is
predicted to be well bound and is expected to be important for tellurium antisite diffusion. We consider the possibilities
that the tellurium antisite is the residual donor and a Shockley-Read recombination center in HgCdTe and suggestions for further
experimental work are made. We predict that the cadmium vacancy, a double acceptor, is the dominant defect for low cadmium
pressures, while the cadmium interstitial, a double donor, dominates at high cadmium pressures. 相似文献
19.
Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance 总被引:1,自引:0,他引:1
M. Carmody J. G. Pasko D. Edwall R. Bailey J. Arias S. Cabelli J. Bajaj L. A. Almeida J. H. Dinan M. Groenert A. J. Stoltz Y. Chen G. Brill N. K. Dhar 《Journal of Electronic Materials》2005,34(6):832-838
The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications
is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon
substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical
challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for
LWIR HgCdTe detectors where the performance can be limited by the high (∼5×106 cm−2) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared
(LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe
and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s planar diode architecture. The diode
and FPA and results at 78 K will be discussed in terms of the high dislocation density (∼5×106 cm2) typically measured when HgCdTe is grown on silicon substrates. 相似文献
20.
We discuss analytic and numerical models for HgCdTe photodiodes and present examples of their application. Analytic models
can account for the performance obtained by many device architectures. Numerical and analytic models agree in predicting several
aspects of device performance, such as diffusion limited dark current, confirming the approximations used in deriving the
analytic models. Areas are noted where improvement in the numerical models would allow application to a wider range of device
simulations. Useful results are obtained from the numerical simulators that cannot be obtained from our analytic model. Flux
dependent R0A products are shown to be a direct result of bias dependent quantum efficiency, a mechanism that is much more evident in
heterojunction device architectures. Material compositional grading is demonstrated to lead to lower signal to noise ratio
in devices designed to detect a particular infrared wavelength. We also show, particularly for high temperature operation,
that heterojunction detectors can at best equal the performance of well-designed homojunction detectors; so, for photodetector
design, heterojunctions do not offer any inherent performance advantages over homojunctions. Nevertheless, heterostructures,
though ideally not required, may be helpful in achieving high performance in practice. 相似文献