氧离子束辅助沉积氧化铪薄膜光学属性的研究

电子枪蒸发制备了氧化铪薄膜,对氧离子束辅助和未辅助两种情况下的样品进行了折射率、吸收、激光损伤阈值等属性的测试,结果表明,氧离子束辅助沉积的样品与未辅助沉积的样品相比具有高的折射率和高的吸收,以及稍低的激光损伤阈值。经过分析发现,薄膜的激光损伤阈值是影响薄膜抗激光特性的不利因素和有利因素竞争的结果,离子束辅助沉积技术在引入结构致密等有利因素的同时,也引入了吸收增加等不利因素。     

离子束辅助沉积制备高功率激光薄膜的研究

综述了离子束辅助沉积技术在高功率激光薄膜制备中的应用研究进展.指出该技术在制备高激光损伤阈值的薄膜中存在的问题,即出现过高的堆积密度,会给薄膜带来杂质缺陷、化学计量比缺陷、损伤缺陷、晶界缺陷,制备薄膜的残余应力存在着压应力增加的趋势,会改变薄膜的晶体结构等.并指出了该研究领域的研究方向.     

离子束辅助技术获得高激光损伤阈值的增透膜

采用合适的离子束辅助沉积(IBAD)参数在K9基底上镀制了高激光损伤阈值的中心波长1053 nm的增透膜,分别从光谱性能、吸收性能、抗激光损伤阈值(LIDT)以及退火后的影响等方面与未进行离子束辅助沉积的薄膜进行对比分析。实验结果发现,采用离子辅助制备的薄膜放置80 d后具有更好的光谱稳定性,与未进行离子束辅助镀制的薄膜相比,平均吸收下降了57%,吸收值偏高的奇异点明显减少;损伤阈值提高了60%,用Leica偏振光学显微镜观察50%损伤几率的能量下破斑形貌,发现经过离子束辅助制备的样品破斑形状整齐且缺陷点少;未进行离子束辅助制备的样品退火后吸收降低,阈值提高,但奇异点没有减少,辅助样品变化不大。由此可知,离子辅助有助于制备高性能基频增透膜。     

离子束增强沉积法制备二氧化铪薄膜

利用离子束增强沉积(IBED)技术在硅衬底上沉积得到50nm的二氧化铪薄膜.卢瑟福背散射(RBS)的结果指出样品表面有过量氧元素存在.X射线光电子能谱(XPS)显示退火前后薄膜内部化学键没有变化.透射电子显微镜(TEM)表明界面处有非晶铪氧硅化合物生成.电子衍射(ED)显示所制备的二氧化铪薄膜呈现长程无序、区域有序的多晶态.实验为HfO2作为高k电介质在集成电路制造中的应用提供了一种简单有效的方法.     

离子束辅助沉积薄膜工艺

阐述了离子源在离子束清洗和离子束辅助薄膜沉积（IAD）中的应用;根据热力学原理及离子碰撞过程分析,研究了离子束辅助沉积过程中的能量传递过程,建立了薄膜折射率与离子辅助沉积过程中各物理量之间的关系模型;探讨了各种工艺条件对离子束辅助沉积薄膜特性的影响,给出了薄膜材料无结晶条件下离子束辅助沉积薄膜工艺选择的相应准则。     

离子束辅助技术在高功率激光薄膜中的应用

从离子束清洗、离子束辅助沉积以及离子束后处理三个方面,介绍了离子束辅助技术在高功率激光薄膜中的应用背景、应用优势以及存在的问题。     

激光清洗阈值和损伤阈值的研究

讨论了采用波长为３０８ｎｍ，脉冲宽度为２８ｎｓ的准分子激光清洗基片的实验研究，分析了激光清洗过程中清洗阈值和损伤阈值存在的原因，并对它们进行了定量性推导。     

薄膜激光损伤阈值标定技术

为了满足薄膜激光损伤阈值客观、准确、高精度测量的要求, 提出了损伤阈值标定技术。通过互换两个能量探测器位置的试验标定方法, 消除分光镜的分光误差和能量探测器的测量误差, 获得准确的辐照能量。再通过调整两个CCD位置获得相同光斑尺寸的测量方法标定被测样品表面与光斑面积测量面的等效, 并剔除激光光斑中非平顶部分, 获得准确的辐照光斑面积。最后采用最小二乘法对计算得到的能量密度及其对应的损伤几率进行拟合, 获得损伤阈值。通过对TiO₂/SiO₂高反射膜1064nm激光辐照测量实验, 得到23.0164J/cm2的薄膜激光损伤阈值。结果表明, 采用标定技术使薄膜激光损伤阈值的测量精度提高了9.26%, 满足高精度的测量要求。此研究有助于薄膜激光损伤阈值的准确标定。     

The development of biaxial alignment in yttria-stabilized zirconia films fabricated by ion beam assisted deposition

Yttria-stabilized zirconia (YSZ) films were deposited using ion assisted, electron beam deposition (IBAD) on Pyrex, quartz, Hastelloy, and polycrystalline zirconia substrates. Film orientation was studied as a function of IBAD fabrication conditions. Film texture from several populations of biaxially aligned grains has been observed. The ion beam is shown to induce biaxial alignment of all grain orientations. Specifically, grains with (200), (311), and (111) normal to the substrate surface are biaxially aligned. The ion beam induces biaxial alignment at all angles of incidence, not just those corresponding to YSZ channeling directions. The development of (200) biaxial alignment on Pyrex is examined as a function of thickness. Biaxially aligned IBAD YSZ films were deposited on amorphous and polycrystalline substrates without active heating. Biaxial alignment development with IBAD is shown to be consistent with a previously proposed growth and extinction model.     

Chemically assisted ion beam etching of gallium nitride

Chemically assisted ion beam etching of gallium nitride (GaN) grown by metalorganic chemical vapor deposition has been characterized using an Ar ion beam and Cl₂gas. The etch rate of GaN was found to increase linearly with Ar ion beam current density, increase linearly then saturate with Ar ion beam energy, vary slightly with Cl₂ flow rate, and lastly, increase moderately with substrate temperature. Etch rates as high as 330 nm/min were obtained at high beam energies and 210 nm/min at a more nominal level of 500 eV. The anisotropy of etched profiles improved in the presence of Cl₂ in comparison to those etched by Ar ion milling only. Elevated substrate temperatures further enhanced the anisotropy to obtain near-vertical profiles for fairly deep-etched structures. Auger electron spectroscopy was used to investigate etch-induced surface changes. Oxygen contamination was observed on the as-etched surface but a dilute HC1 treatment restored the stoichiometry of the material to its unetched state.     

Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different depo sition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.     

不同能量的离子束辅助淀积的光学薄膜

本文以TiO_2薄膜为例,研究并分析了不同能量的离子束辅助淀积的薄膜的光学性能、激光破坏阈值及微结构。     

Reactive ion beam deposition of aluminum nitride thin films

Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.     

Characterization of Si-N films prepared by reactive ion beam sputtering

Application of silicon-nitride (Si-N) as a passivant in com-pound semiconductor technology requires a low-temperature deposition process to prevent dissociation of the volatile constituents of the semiconductor. With this in mind, an exploratory study of Si-N films prepared at room temperature using low-energy, reactive ion-beam sputtering has been carried out. The electrical and optical characteristics of the films have been studied, and an annealing step is found necessary to reduce the conductivity of the nitride and im-prove the interfacial properties. On leave of absence from the Department of Physics, Kurukshetra University, Kurukshetra-132119, India.     

HfO2/SiO2多层高反膜脉冲YAG激光预处理机理的研究

本文研究了HfO2 /SiO2 多层高反膜脉冲YAG激光预处理提高抗激光损伤阈值的机理。通过分析和计算 ,我们提出了一种物理模型 ,即热扩散模型。由于扩散结果 ,导致HfO2 膜层的折射率增加 ,致使HfO2 、SiO2 膜层交界处光驻波波峰降低 ,从而提高了薄膜抗激光损伤阈值