W掺杂量对非晶态Ti02：W薄膜光学带隙的影响

在不同的W靶溅射功率下，用反应磁控溅射法在载玻片上制备了TiO2：W薄膜，并对样品进行了XRD，STS和UV-Vis分析，结果表明试样为非晶态；w靶溅射功率为30w时，带隙为2．75eV；W靶溅射功率为100W时，带隙为3．02eV；W靶溅射功率为150W时，带隙能为2．92eV．STS分析结果表明，在样品的禁带中产生了新的能级，能级宽度为0．83eV．     

磁控溅射CdTe薄膜的光电学特性

采用射频磁控溅射方法在玻璃和Si(111)衬底上制备了碲化镉(CdTe)薄膜,并研究了溅射功率对薄膜的结构、光学和电学性能的影响.X射线衍射分析表明,所有样品均沿(111)面择优取向; 平均晶粒尺寸随溅射功率的增加而增加,即从73.0 nm(70 W)增加到123.6 nm(110 W).紫外 - 可见 - 近红外光谱分析表明, CdTe薄膜在可见光范围内具有较高的吸光度; 薄膜的带隙随着溅射功率的增加而减小,最小值为1.38 eV.CdTe薄膜的导电性随溅射功率的增加而明显增强,当溅射功率为110 W时电阻率仅为21.5 Ω?cm.该研究结果可为制备高导电性和高吸收率的半导体薄膜提供参考.     

生长温度对掺钛氧化锌薄膜光学性质的影响

以氧化锌钛陶瓷靶作为溅射源,采用磁控溅射技术在玻璃衬底上制备了掺钛氧化锌(TZO)透明导电薄膜,通过X射线衍射仪和分光光度计测试表征以及全光谱拟合法分析,研究了生长温度对TZO薄膜晶体结构和光学性质的影响.结果表明:所有TZO样品均为六角纤锌矿结构,并具有(002)择优取向,生长温度对薄膜晶粒尺寸和光学透射率的影响较明显,而对折射率、消光系数和光学能隙的影响较小.当生长温度为200℃时,TZO薄膜的晶粒尺寸最大,可见光范围平均透射率(含衬底)为76.1%,对应的直接光学能隙为3.45 eV.     

沉积功率对多晶硅薄膜结构和光学性质的影响

采用等离子体化学汽相沉积(PECVD)方法在普通玻璃衬底上制备出多晶硅薄膜.研究了在不同沉积功率下的薄膜的沉积速率、晶相结构、吸收系数和光学禁带宽度.实验结果表明,沉积功率为140 W时薄膜沉积速率最大,达到7.8 nm/min.沉积功率为30 W多晶硅薄膜的晶粒较大,平均尺寸200 nm左右.沉积功率为100 W薄膜有较高结晶度,晶化率达到68%.薄膜样品在波长为500 nm的光吸收系数达到6×104 cm-1,在不同功率下样品的光学禁带宽度在1.70-1.85 eV之间变化.     

AFM分析磁控溅射法制备的TiO2纳米薄膜

采用磁控反应溅射法,在室温条件下制备了TiO2纳米薄膜,用原子力扫描显微镜(AFM)分析考察了溅射功率、溅射时真空室压力等工艺参数对薄膜结晶状态、晶粒尺寸的影响.实验结果表明,在室温下,只有溅射功率大于100W以上时,才能形成粒子结晶完全的纳米薄膜,随着溅射功率的增加,真空室溅射气压的降低,薄膜中TiO2粒子尺寸显著增大;随着溅射时间的延长,薄膜厚度增加.并根据溅射薄膜的成膜机理,讨论了实验工艺参数对薄膜微结构的影响.     

溅射气体流量比对磷掺杂ZnO光学性质的影响

采用磁控溅射方法在石英衬底上制备ZnO薄膜,利用XRD对薄膜结构进行表征,发光光谱和透射吸收光谱表征薄膜的光学性质,讨论了溅射气体流量比对薄膜光学性质的影响。结果表明,当Ar/O₂为1/0.05时,观察到明显的紫外发光,带隙宽度为3.310 eV。     

磁控溅射制备Ti-Zn-O复合薄膜及其光学性质研究

TiO2是作为一种宽禁带半导体材料可作为紫外器件,但因其间接带隙结构、禁带宽度仅为3.0eV等特点,严重影响其应用范围。本文利用共溅射技术,通过Zn掺杂,在K9玻璃基底上制备了Ti-Zn-O复合薄膜,并研究了Zn溅射功率对其结构及光学性质的影响。结果显示：所制备的薄膜为ZnTiO3和不饱和TiO2的复合结构,随着Zn粒子的溅射能量增加,晶粒尺寸和表面粗糙度增加,并可将薄膜本征吸收边蓝移至3.61eV。     

原子力显微镜在ZAO薄膜表征中的应用

利用磁控溅射法在溅射功率分别为30,50,80,100W条件下制备ZAO薄膜,并通过原子力显微镜(AFM)、X射线衍射(XRD)谱对制得的薄膜样品进行表面形貌、结构特性和黏附性能进行研究。XRD结果表明,随着溅射功率的增加,ZAO薄膜呈现了明显的(002)择优取向,结晶质量获得提高。通过原子力显微镜对样品的二维、三维以及剖面线图进行分析。随着溅射功率增大,薄膜样品表面较均匀致密,晶粒生长较充分,结晶质量较高,粗糙度和黏附力均增大。     

射频磁控溅射制备的CdSe薄膜的光电学性质

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明：增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.     

射频功率对Cu/Ag导电薄膜结构和性能的影响

采用射频磁控溅射工艺以Cu／Ag合金为靶材在高阻半导体Cd1-xZnxTe上制备导电薄膜。系统地研究了溅射功率对沉积速率、薄膜电阻率、组织形貌及接触性能的影响。结果表明，沉积速率随溅射功率的增加呈线性增加，薄膜电阻率随功率增大而增大。电流-电压关系（I—U）测试表明在高阻Cd1-xZnxTe上溅射Cu／Ag薄膜后不经热处理已具有良好的欧姆接触性，溅射功率为100W时的接触性能好于功率40W时的接触性能。     

Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained. Supported by the National Natural Science Foundation of China (Grant Nos. 50772006, 10432050)     

CdO - ZnO复合薄膜的光电学特性研究

采用磁控溅射技术制备了不同原子百分比的CdO - ZnO复合薄膜,并利用X射线衍射仪、扫描电子显微镜、紫外可见近红外分光光度计、四探针电阻测试仪研究了薄膜的结构和光电学特性.研究表明:适量增加CdO掺杂量可提高薄膜在近红外区域的透射率; CdO - ZnO复合薄膜的光学带隙和电阻率随CdO含量的增加而减小,且当CdO和ZnO的原子百分比为4:1时薄膜的带隙和电阻率分别为2.09 eV和10.79×10^-3 Ω·cm.该研究结果可为制备高导电性和高透过率的薄膜提供参考.     

Effect of the sputtering parameters on the structure and properties of Cu<Subscript>3</Subscript>N thin film materials

Copper nitride (Cu₃N) thin films were successfully deposited on glass substrates by reactive radio frequency magnetron sputtering. The effects of sputtering parameters on the structure and properties of the films were studied. The experimental results show that with increasing of RF power and nitrogen partial pressure, the preferential crystalline orientation of Cu₃N film is changed from (111) to (100). With increasing of substrate temperature from 70 °C to 200 °C, the film phase is changed from Cu₃N phase to Cu. With increasing sputtering power from 80 W to 120 W, the optical energy decreases from 1.85 eV to 1.41 eV while the electrical resistivity increases from 1.45 ×10² Ω · cm to 2.99 × 10³ Ω · cm, respectively.     

Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> thin films prepared by sulfurizing different multilayer metal precursors

Cu₂ZnSnS₄ (CZTS) thin films were successfully fabricated on glass substrates by sulfurizing Cu-Sn-Zn multilayer precursors, which were deposited by ion beam sputtering and RF magnetron sputtering, respectively. The structural, electrical and optical properties of the prepared films under various processing conditions were investigated in detail. Results showed that the as-deposited CZTS thin films with the precursors by both ion beam sputtering and RF magnetron sputtering have a composition near stoichiometric. The crystallization of the samples, however, has a strong dependence on the atomic percent of constituents of the prepared CZTS films. A single phase stannite-type structure CZTS with a large absorption coefficient of 10₄/cm in the visible range could be obtained after sulfurization at 520°C for 2 h. The samples relative to the RF magnetron sputtering showed a low resistivity of 0.073 Ωcm and band gap energy of about 1.53 eV. The samples relative to the ion beam sputtering exhibited a resistivity of 0.36 Ωcm and the band gap energy is about 1.51 eV. Supported by the National Natural Science Foundation of China (Grant No. 10574106), the Planned Science and Technology Project of Guangdong Province (Grant No.2003C05005) and the Natural Science Fund of Zhanjiang Normal University (Grant No.200801)     

Sputtering preparation and magneto-optical properties of GdTbFeCo thin films

Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target.The influences of sputtering parameters on the magneto-optical properties GdTbFeCo thin film were investigated by the variable control method.And the influence mechanism was analyzed in detail.After the sputtering parameters were optimized,it was found that when the distance between target and substrate was 72 mm,the thin film thickness was 120 nm,and the sputtering power,sputtering pressure and sputtering time was 75 W,0.5 Pa and 613 s,respectively,the coercivity with perpendicular anisotropy could be as high as 6735 Oe,and the squareness ratio of the hysteresis loop was almost equal to 1.     

磁控溅射TiCN薄膜对Al-Cu-Mg-Ag合金组织与性能的影响

基于正交试验设计，在铝合金表面磁控溅射沉积TiCN薄膜，采用盐雾腐蚀、电化学腐蚀、硬度测试等探究磁控溅射工艺参数（钛靶功率、碳靶功率、氮氩比）对Al-Cu-Mg-Ag合金硬度与抗腐蚀性能的影响规律，并结合扫描电镜（SEM）、X射线衍射（XRD）等对其机理进行探讨。结果表明：磁控溅射工艺参数对合金的膜层硬度、盐雾最大腐蚀深度、腐蚀电流密度、膜基结合力的影响顺序分别为：氮氩比>C靶功率>Ti靶功率；C靶功率>氮氩比>Ti靶功率；C靶功率>氮氩比>Ti靶功率；Ti靶功率>C靶功率=氮氩比。C靶功率200 W、Ti靶功率100 W、氮氩比为1：40时，可以获得耐蚀性、硬度和膜基结合力综合性能优良的TiCN膜层。