不等分Gysel功分器的简化设计方法

Gysel功分器（功率分香己／合成器）在雷达和通信领域有着广泛的应用。本文根据传输线原理,分析了总口、分口、隔离口特性阻抗都相等的不等分Gysel功分器的模型,确定了其中4段传输线的特性阻抗值,简化了这种功分器的设计。根据这种简化的设计方法研制了一个Gysel功分器的样件,计算结果与试验结果具有较好的一致性,证明了该方法的有效性。     

Gysel功率分配/合成器的设计与分析方法

介绍了一种适用于大功率的Gysel型功率分配/合成器的工作原理、设计参数及性能特征,给出了相关的拓扑结构与设计方法。结合设计实例给出微波CAD原理图、插入损耗和回波损耗等仿真曲线,并提供实测的性能指标。比较了优于其他拓扑结构的很多特点。     

宽带大功率径向波导功率合成器设计

平行板径向波导功率合成器具有工作频带宽,低插入损耗,与放大器和传输线匹配良好,端口隔离度较高,功率容量大等特点。设计了一个1.5kW宽带6路径向波导功率合成器,CST软件仿真结果表明:该合成器在驻波比小于1.1的情况下,其工作频带为1.35~3.3GHz,合成效率达到96%。     

一种3路径向高功率合成器的设计

介绍了一种3路径向高功率合成器的设计,该3路功率合成器采用50Ω负载作为两路之间的隔离电阻,且通过50Ω阻抗线与电路主体连接,负载尺寸以及安装位置不影响合成器的电性能,实现了高功率隔离的目的。文中对该功分器各传输线的阻抗进行了分析计算,并给出了HFSS软件的仿真结果和实测结果。仿真和实测结果显示:该合成器在16%带宽内隔离度小于-25 dB,满足一般功率合成器的使用要求。该3路径向高功率合成器具有幅相一致性高,耐功率高的特点,可用于固态发射机的功率合成以及雷达天线阵面大功率输出和定标系统中。     

多路任意功分比Gysel功分器

本文提出了一种多路任意功分比Gysel功分器,通过传输线和电路理论对该结构进行了分析,推导了满足任意路数和功分比的设计公式,研究了设计变量对频率带宽的影响.该结构适用于任意端口数、任意终端阻抗和任意功分比.进一步,通过对提出的Gysel功分器进行ADS和HFSS仿真,分别设计中心频率在3.5 GHz的4路等分(1:1:...     

基于耦合三线结构的宽带功分器研究*

由于传统的威尔金森功分器需要通过多级传输线的级联来拓展其工作带宽,增加了电路设计的复杂度。因此本文提出了一种基于耦合三线的宽带功分器结构。通过在四分之一波长传输线的两端分别引入一节耦合三线,使功分器实现了宽带特性。采用三线耦合器与阻抗变换理论,对影响功分器工作带宽、输入输出端口匹配度和隔离度参数进行了理论分析,并设计制造了基于此结构的宽带功分器。测试结果表明该功分器具有很好的端口匹配、传输损耗和端口隔离特性。     

基于切比雪夫变换的超宽带功分器设计

针对超宽带不等分功分器难以设计的问题,基于切比雪夫变换得到了一种超宽带功分器的设计方法,该方法可以根据工作带宽要求调整变换级数,而且输出端口之间的功率分配比在一定范围内可以连续设计。采用此方法设计了一个四倍频程的超宽带功分器,仿真结果表明,在2~8GHz频段范围内,各端口的驻波比小于1.27,输出端口之间的相位一致性优于±0.3°,输出端口之间的隔离度小于-19.7dB,而且输出端口之间的功率分配比在1.47~1.54之间,和要求的功率分配比1.5符合很好。     

一种新型毫米波8路功分器/合成器的设计

设计了一种Q波段8路功分器/合成器。利用波导功分器及微带功分器混合设计,提出了波导-微带4路功分器与3 dB Wilkinson电桥一体化设计思想,设计出一种较高隔离度,结构紧凑的新型8路功率分配器/合成器。通过高频电磁仿真软件(HFSS)仿真设计,在42 GHz~47 GHz频带范围内,8路分配器输出端口反射损耗优于-19 dB;8路输出端口的幅度不平衡度小于0.25 dB,相位不平衡度小于0.5o,插损小于0.25 dB;4个输出口之间的隔离度大于9 dB,是一种较为理想的8路功率分配器/合成器,在实际小体积高合成效率要求的固态功率合成领域,以及具有小体积的多路信道实现中,具有较高的应用价值。     

新型微带三路功分器及其散射特性分析

提出了一种微带三路功分器结构,由12段1/4波长微带线和两个隔离电阻组成,通过调整各传输线特征阻抗可实现不同功率分配比.应用多端口网络级联方法对其散射参数进行分析并得到了近似表达式,采用数值优化方法结合电磁软件仿真设计了工作于2.4GHz,具有不同功分比的三路功分器.仿真及实测结果表明:该新型功分器可在超过25%相对带宽内实现各端口回波损耗-16dB,功分端口间隔离度20dB,功分比误差±0.5dB.功分器结构简单紧凑,适用于微波混合电路和微波集成电路.     

紧凑型高性能L波段Wilikinson三路功分器的设计

提出了一种基于LTCC技术的紧凑型L波段Wilkinson三路功率分配器。对三路功分器进行奇偶模分析,在ADS软件中设计电路,然后在HFSS软件中对该电路进行三维仿真优化。该功分器由LC集总元件组成,以实现更高的隔离度;采用对称结构以降低设计复杂度;使用加载电容和外置电阻以降低元件误差和体积;电阻使用跨接方式以实现低反射损耗。功分器实物测试与仿真结果一致,最终设计的三路功分器尺寸为3.2 mm×1.6 mm×0.89 mm。功分器的中心频率为1250 MHz,带宽为100 MHz,通带插入损耗为4.95～5.05 dB,输入端反射损耗小于-25 dB,端口隔离度小于-25 dB。     

Design of Low-Profile Millimeter-Wave Substrate Integrated Waveguide Power Divider/Combiner

A low-profile millimeter-wave substrate integrated waveguide (SIW) power divider/combiner is presented in this paper. The simplified model of this compact SIW power dividing/combining structure has been developed. Analysis based on equivalent circuits gives the design formula for perfect power dividing/combining. In order to verify the validity of the design method, a four-way SIW power divider/combiner circuit operating at Ka band is designed, fabricated and measured. Good agreement between simulated and measured results is found for the proposed passive power divider/combiner. Experiments on the four-way passive divider/combiner back-to-back design demonstrate a minimum overall insertion loss of 1.5 dB at 31.1 GHz, corresponding to a power-combining efficiency of 84%. The measured 10-dB return loss bandwidth is demonstrated to be 2.2 GHz, and its 0.5-dB bandwidth was 2 GHz.     

A MICROSTRIP PROBE COAXIAL WAVEGUIDE POWER DIVIDER/COMBINER

A novel power divider/combiner using microstrip probes array in the oversized coaxial waveguide is proposed in this paper. The simple electromagnetic modeling of this power dividing/combining structure has been developed. Analysis based on equivalent circuits gives the design formula for perfect power dividing/combining. A four-way waveguide power divider has been designed and fabricated. The measured results agree well with the simulated results. The measured 15-dB return loss bandwidth of this waveguide power divider is demonstrated to be 28.6% and its 0.5-dB insertion loss bandwidth 41.3%.     

径向功率分配／合成器的设计

讨论一种多路径向功率分配／合成器的设计及其阻抗匹配问题,这种功率分配器和合成器合成效率高,是固态功率合成的理想途径。     

A 6-GHz 80-W GaAs FET Amplifier with a TM-Mode Cavity Power Combiner

A novel 8-way divider/combiner using TM/sub 010/- and TM/sub 020/ -mode cavities was developed. This divider/combiner has an insertion loss of 0.2 dB and a bandwidth of 600 MHz in the 6-GHz communications band. For broadening the operating bandwidth of the divider/combiner, two techniques of double cavities and tight coupling are described. Degradation of power-combining efficiency is also discussed when input signals into a power combiner have variations in amplitude and phase. By using this divider/combiner, an experimental 6-GHz 80-W GaAs FET amplifier with a combining efficiency of 85 percent was demonstrated to investigate the feasibility of a solid-state high-power amplifier.     

The Traveling-Wave Divider/Combiner

A new kind of distributed power divider/combiner circuit for use in octave (or more) bandwidth microstrip power transistor amplifiers is presented. The design, characteristics and advantages are discussed. Experimental results on a four-way divider and divider/combiner are presented and compared with theory. First experimental results on a six-way traveling-wave divider (TWD) are also presented.     

A novel exponential power combiner/divider

A simple and novel theoretical analysis for an exponential two-way power combiner/divider is developed. The proposed power combiner/divider's parameters, such as input impedance and reflection and transmission coefficients, are determined. The capacitance effect due to the finite thickness of the coupled-line conductor for both uniform and nonuniform transmission lines is found. The properties of the combiner/divider were tested experimentally, and experimental results are presented     

毫米波300W固态功率合成放大器的设计

基于单片微波集成功率放大器(Monolithic Microwave Integrated Circuits,MMIC PA)的毫米波波导空间功率合成技术是固态毫米波高功率电子领域的热门研究方向。多合成支路情况,保持较高的合成效率和较宽的工作带宽是实现固态毫米波宽带高功率合成的关键技术难题。为提高功率合成效率,研制了石英基板微带探针与波导之间的过渡结构。结合波导T型分支、波导分支线、波导H面缝隙耦合和波导一分四型的4种波导功率分配/合成器,通过精确的电磁仿真研制了64路功率合成放大器。     

10?30 GHz monolithic GaAs travelling-wave divider/combiner

A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.     

Ku频段固态功率合成器设计

本文介绍了一个Ku频段功率合成器的设计和实验结果,采用分支线分配／合成网络实现2管功率合成,合成效率74％。     

Millimeter-wave-band amplifier and mixer MMICs using a broad-band45° power divider/combiner

This paper demonstrates millimeter-wave-band amplifier and mixer monolithic microwave integrated circuits (MMIC's) using a broad-band 45° power divider/combiner. At first, we propose a broad-band 45° power divider/combiner, which combines a Wilkinson divider/combiner, 45° delay line, and 90° short stub. A coupling loss of 4.0±0.2 dB and a return loss and an isolation of more than 19 dB with 45±1° phase difference was obtained from 17 to 22 GHz for the fabricated K-band MMIC 45° power divider/combiner. Next, a parallel amplifier using the broad-band 45° power divider/combiner, which can be used in a power-combining circuit configuration requiring no isolator, is shown. Comparing the transmitter intermodulation generated in the parallel amplifier using the broad-band 45° power divider/combiner and that generated in the one using the conventional type, the broad-band suppression effect was confirmed. Finally, an application of the broad-band 45° power divider/combiner to a single-sideband (SSB) subharmonically pumped (SHP) mixer requiring no IF switch is shown. In an RF frequency range from 22.89 to 26.39 GHz, the fabricated K-band MMIC mixer achieved (for up-conversion) the good results of more than -13-dB conversion gain and more than 24-dB image-rejection ratio. These contribute significantly to the miniaturization of millimeter-wave communication equipment