A 12-b, 10-MHz, 250-mW CMOS A/D converter

A 12-b, 10-MHz, 250-mW, four-stage analog-to-digital converter (ADC) was implemented using a 0.8-μm p-well CMOS technology. The ADC based on a digitally calibrated multiplying digital-to-analog converter (MDAC) selectively employs a binary-weighted capacitor array in the front-end stage and a unit-capacitor array in the remaining back-end stages to obtain 12 b level linearity while maintaining high yield. All the analog and digital circuit functional blocks are fully integrated on a single chip, which occupies a die area of 15 mm² (4.2 mm×3.6 mm). Measured differential nonlinearity (DNL) and integral nonlinearity (INL) of the prototype are less than ±0.8 LSB and ±1.8 LSB, respectively     

A 12-b 600 ks/s digitally self-calibrated pipelined algorithmic ADC

This paper discusses fully digital error correction and self-calibration which correct errors due to capacitor mismatch, charge injection, and comparator offsets in algorithmic A/D converters. The calibration is performed without any additional analog circuitry, and the conversion does not need extra clock cycles. This technique can be applied to algorithmic converter configurations including pipelined, cyclic, or pipelined cyclic configurations. To demonstrate the concept, an experimental 2-stage pipelined cyclic A/D converter is implemented in a standard 1.6-μm CMOS process. The ADC operates at 600 ks/s using 45 mW of power at ±2.5 V supplies. The active die area excluding the external logic circuit is 1 mm². Maximum DNL of ±0.6 LSB and INL of ±1 LSB at a 12-b resolution have been achieved     

A digitally self-calibrating 14-bit 10-MHz CMOS pipelined A/Dconverter

A digitally self-calibrating pipelined analog-to-digital converter (ADC) featuring 1.5-bit/stage structure is presented. The integral (INL) and differential nonlinearity (DNL) errors are removed using a novel digital calibration algorithm, which also eliminates missing codes that can occur with other calibration algorithms near the extremes of the input range. After calibration, the measured DNL is ±0.6 LSB and the INL is ±2.5 LSB at the 14-bit level. Sampling at a 10-MHz rate, the chip dissipates 220 mW and (post-calibration) yields a signal-to-noise ratio of 77 dB and a spurious-free dynamic range of 95 dB with 4.8-MHz sine wave input signal. The chip is fabricated in 0.5-μm CMOS double-poly double-metal process, measures 3.8 mm × 3.3 mm (150 mil × 130 mil), and operates from a single 5-V supply     

A 10-Bit 500-MS/s 55-mW CMOS ADC

A pipelined ADC incorporates a digital foreground calibration technique that corrects errors due to capacitor mismatch, gain error, and op amp nonlinearity. Employing a high-speed, low-power op amp topology and an accurate on-chip resistor ladder and designed in 90-nm CMOS technology, the ADC achieves a DNL of 0.4 LSB and an INL of 1 LSB. The prototype digitizes a 233-MHz input with 53-dB SNDR while consuming 55$~$mW from a 1.2-V supply.      

一种数字CMOS工艺制造的10位100MS/s流水线ADC

介绍了采用0.18μm数字工艺制造、工作在3.3V下、10位100MS/s转换速率的流水线模数转换器。提出了一种适用于1.5位MDAC的新的金属电容结构,并且使用了高带宽低功耗运算放大器、对称自举开关和体切换的PMOS开关来提高电路性能。芯片已经通过流片验证,版图面积为1.35mm×0.99mm,功耗为175mW。14.7MS/s转换速率下测得的DNL和INL分别为0.2LSB和0.45LSB,100MS/s转换速率下测得的DNL和INL分别为1LSB和2.7LSB,SINAD为49.4dB,SFDR为66.8dB。     

一种电容阵列结构的10位8通道1MS/s逐次逼近AD转换器

设计了一种用于多电源SoC的10位8通道1MS/s逐次逼近结构AD转换器。为提高ADC精度,DAC采用改进的分段电容阵列结构。为降低功耗,比较器使用了反相器阈值电压量化器,在模拟输入信号的量化过程中减少静态功耗产生。电平转换器将低电压数字逻辑信号提升为高电平模拟信号。采用UMC 55nm 1P6M数字CMOS工艺上流片验证设计。测试结果表明,当采样频率为1 MS/s、输入信号频率为10 kHz正弦信号情况下,该ADC模块在3.3 V模拟电源电压和1.0 V数字电源电压下,具有最大微分非线性为0.5LSB,最大积分非线性为1LSB。测得的SFDR为75 dB,有效分辨率ENOB为9.27位。     

An 8-bit 100-MS/s pipelined ADC without dedicated sample-and-hold amplifier

An 8-b 100-MS/s pipelined analog-to-digital converter(ADC) is presented.Without the dedicated sample-and -hold amplifier(SHA),it achieves figure-of-merit and area 21%and 12%less than the conventional ADC with the dedicated SHA,respectively.The closed-loop bandwidth of op amps in multiplying DAC is modeled,providing guidelines for power optimization.The theory is well supported by transistor level simulations.A 0.18-μm 1P6M CMOS process was used to integrate the ADCs,and the measured results show that the...     

A low power 12-b 40-MS/s pipeline ADC

This paper describes a 12-bit, 40-MS/s pipelined A/D converter (ADC) which is implemented in 0.18-μm CMOS process drawing 76-mW power from 3.3-V supply. Multi-bit architectures as well as telescopic operational transconductance amplifiers (OTAs) are adopted in all pipeline stages for good power efficiency. In the first two stages,particularly, 3-bit/stage architectures are used to improve the ADC's linearity performance. The ADC is calibration-free and achieves a DNL of less than 0.51 LSB and an INL of less than 1 LSB. The SNDR performance is above 67 dB below Nyquist. The 80-dB SFDR performance is maintained within 1 dB for input frequencies up to 49 MHz at full sampling rate.     

一种用于14 bit SAR ADC的DAC设计

本文设计了用于14bit逐次逼近型模数转换器（SAR ADC）的DAC电路。针对该DAC,介绍一种全差分分段电容阵列结构以缩小DAC的版图面积;高二位权电容采用热码控制,用以改善高位电容在转换时跳变的尖峰以及DAC的单调性;对电容阵列采用数字校准技术,减小电容阵列存在的失配,以提高SAR ADC精度。校准前,SAR ADC的INL达到10LSB,DNL达到4LSB;与校准前相比,校准后,INL〈0.5LSB,DNL〈0.6LSB。仿真结果表明,本DAC设计极大改善SAR ADC的性能,已达到设计要求。     

A 10-b 20-MHz 30-mW pipelined interpolating CMOS ADC

This paper describes a circuit design and experimental results of a video-rate 10-b analog-to-digital converter (ADC) suitable for portable audio-visual equipment. Two new circuit techniques, termed pipelined capacitive interpolation and error averaging circuits with capacitor networks, are developed. As a result, very low power dissipation of 30 mW at a low power-supply voltage of 2.5 V is attained at the conversion frequency of 20 MHz. Also, a good DNL of less than ±0.5 LSB and an acceptable signal-to-noise and distortion ratio of 55 dB are obtained for the input frequencies of 1 kHz and 1 MHz, respectively. The ADC is fabricated in 0.8-μm CMOS technology and occupies an area of 2.6×2.5 mm²     

A 1-V 100-MS/s 8-bit CMOS Switched-Opamp Pipelined ADC Using Loading-Free Architecture

A 1-V, 8-bit pipelined ADC is realized using multi-phase switched-opamp (SO) technique. A novel loading-free architecture is proposed to reduce the capacitive loading and to improve the speed in low-voltage SO circuits. Employing the proposed loading-free pipelined ADC architecture together with double-sampling technique and a fast-wake-up dual-input-dual-output switchable opamp, the ADC achieves 100-MS/s conversion rate, which to our knowledge is the fastest ADC ever reported at 1-V supply using SO technique, with performance comparable to that of many high-voltage switched-capacitor (SC) ADCs. Implemented in a 0.18-mum CMOS process, the ADC obtains a peak SNR of 45.2 dB, SNDR of 41.5 dB, and SFDR of 52.6 dB. Measured DNL and INL are 0.5 LSB and 1.1 LSB, respectively. The chip dissipates only 30 mW from a 1-V supply     

一种前后台结合的SAR ADC的校准算法

提出了一种数字前台校准技术,即电容重组技术,并将该技术与LMS数字后台校准技术相结合,提高了LMS算法的收敛速度。提出的算法使用RC混合结构的14位SAR ADC进行建模。仿真结果表明,LMS算法的收敛速度可以提高到1 k个转换周期内,同时校准后ADC的ENOB平均值从10.59 bit提高到13.79 bit。SFDR平均值从71.33 dB提高到112.93 dB,DNL最大值的平均值从1.88 LSB提高到0.97 LSB。INL最大值的平均值从8.01 LSB提高到0.88 LSB。     

A 10-b 20-Msample/s low-power CMOS ADC

A single-ended input but internally differential 10 b, 20 Msample/s pipelined analog-to-digital converter (ADC) is demonstrated with 4 mW per stage using a single 5 V supply. The prototype ADC made of an input sample and hold (S/H) plus 8 identical unscaled pipelined stages consumes 50 mW including power consumed by a bias generator and two internal buffer amplifiers driving common-mode bias lines. Key circuits developed for this low-power ADC are a dynamic comparator with a capacitive reference voltage divider that consumes no static power, a source-follower buffered op amp that achieves wide bandwidth using large input devices, and a self-biased cascode biasing circuit that tracks power supply variation. The ADC implemented using a double-poly 1.2 μm CMOS technology exhibits a DNL of ±0.65 LSB and a SNDR of 54 dB while sampling at 20 MHz. The chip die area is 13 mm²     

A low-Voltage 10-bit CMOS DAC in 0.01-mm/sup 2/ die area

A low-voltage 10-bit digital-to-analog converter (DAC) for static/dc operation is fabricated in a standard 0.18-/spl mu/m CMOS process. The DAC is optimized for large integrated circuit systems where possibly dozens of such DAC would be employed for the purpose of digitally controlled analog circuit calibration. The DAC occupies 110 /spl mu/m/spl times/94 /spl mu/m die area. A segmented R-2R architecture is used for the DAC core in order to maximize matching accuracy for a minimal use of die area. A pseudocommon centroid layout is introduced to overcome the layout restrictions of conventional common centroid techniques. A linear current mirror is proposed in order to achieve linear output current with reduced voltage headroom. The measured differential nonlinearity by integral nonlinearity (DNL/INL) is better than 0.7/0.75 LSB and 0.8/2 LSB for 1.8-V and 1.4-V power supplies, respectively. The DAC remains monotonic (|DNL|<1 LSB) as INL reaches 4 LSB down to 1.3-V operation. The DAC consumes 2.2 mA of current at all supply voltage settings.     

A 4.8 GS/s 5-bit ADC-Based Receiver With Embedded DFE for Signal Equalization

A 5-bit 4.8 GS/s 4-way time-interleaved ADC is designed for a receiver front-end in a 0.13 $muhbox{m}$ CMOS technology. Each time-interleaved ADC uses look-ahead pipelined stages to enable higher sample rates and more linear residue characteristics than a conventional pipeline ADC. At 1.2 GHz per path, the residue amplifiers settle to 75% of their final value, however, the linear residue characteristics allows using digital reference calibration to enable 30.4 dB of SNDR with a 1.2 MHz input signal. A capacitor pre-charging technique reduces the memory effect errors of the incompletely settled residue to 2% of the stage output swing. The peak INL and DNL are measured as 0.65LSB and 0.55LSB, respectively. The measured ERBW is ${sim},$ 6.1 GHz. The ADC, including the reference buffers, consumes 300 mW from a 1.2-V supply while operating at 4.8 GHz conversion rate. A stage-by-stage feedback compensates the possible bandwidth limitation of the system using a per-stage speculative DFE. The DFE tap is adjustable between 0 and 0.4 using 8 control bits.      

14 bit 50 ms/s 0.18 μm CMOS pipeline ADC based on digital error calibration

Described is a 14 bit 50 MS/s CMOS four-stage pipeline A/D converter (ADC)-based on a digital code-error calibration. The proposed calibration technique measures the capacitor mismatch errors of the front-end multiplying DAC (MDAC) with the back-end pipeline stages while the measured code errors are stored in memory and corrected in the digital domain during normal conversion. The calibration needs the increased power dissipation and chip area of 1.4 and 10.7 , respectively, compared to a 14 bit uncalibrated conventional pipeline ADC. The prototype ADC fabricated in a 0.18 um CMOS process occupies an active die area of 4.2 mm² and consumes 140 mW at 1.8 V and 50 MS/s. After calibration, the measured DNL and INL of the ADC are improved from 0.69 to 0.39 LSB and from 33.60 to 2.76 LSB, respectively.     

生化微传感SOC片内嵌入ADC的设计与实现

首先根据生化微传感SOC的应用场合和微传感器的特点,选定CR SARADC作为片内嵌入类型;基于SOC的标准CMOS工艺实现和低功耗的设计目标,分别进行了电容阵列、比较器、开关阵列和SAR控制逻辑等组成单元全定制原理图、版图设计,实现了片内嵌入10位ADC的整体芯片.流片实测结果DNL、INL最大值分别为＋/1.0LSB、＋/-1.5LSB,功耗仅为4.62mW,满足生化微传感SOC数据转换的片内嵌入要求.     

A 12-bit self-calibrating SAR ADC achieving a Nyquist 90.4-dB SFDR

This paper describes a 10 or 12 bit programmable successive approximation register ADC for bridge stress monitoring systems requiring high-resolution, high linearity, low power and small size. Its sampling rate is scalable, from 0 to 200 kS/s. The proposed ADC employs a novel time-domain comparator with offset cancellation. Prototyped in a 0.18-μm, 6MIP CMOS process, the ADC, at 12 bit, 100 kS/s, achieves a Nyquist SNDR of 68.74 dB (11.13), an SFDR of 90.36 dB, while dissipating 579.6 μW from a 1.8-V supply. The on-chip calibration improves the DNL from +0.2/?0.74 LSB to +0.23/?0.25 LSB and INL from +1.27/?0.97 LSB to +0.41/?0.4 LSB.     

一个采用面向建立走线优化的定制三维1-fF MOM单位电容的电容型数模转换器

异步逐次比较模数转换器由于其高能效和中高性能在近年来得到了广泛的关注。其设计性能的主要瓶颈在于其单位电容的大小。本文提出了一种三维结构的金属-氧化层-金属电容,其单位电容大小仅为1 fF。该电容形似伞状,以此实现快速建立的性能需求。作者将该电容和目前国际顶尖的定制化三维电容结构进行了比较。为了验证该电容的有效性,作者设计了一个基于该电容的6位电容型数模转换器,基于TSMC 1P9M 65nm LP CMOS工艺。该数模转换器在100MS/s的工作速度下功耗为0.5mW,其中没有包含以可测性为目的的源级跟随器。静态性能测试结果显示该数模转换器的INL小于 /- 1LSB,DNL 小于 /- 0.5 LSB,从而证明了该电容的有效性。     

A 9-bit 2 MS/s 1 mW CMOS cyclic folding A/D converter for battery management system

In this paper, a 9-bit 2 MS/s CMOS cyclic folding A/D converter (ADC) for a battery management system is described. The scheme of the ADC is based on a cyclic style to reduce chip area and power consumption. To obtain a high speed ADC performance, further, we use a folding–interpolation architecture. The prototype ADC is implemented with a 0.35 μm 2P4M n-well CMOS process. The measured results for INL and DNL are within ±1.5/±1.0 LSB. The ADC demonstrates a maximum SNDR and SFDR of 48 and 60 dB, respectively, and the power consumption is about 1 mW at 3.3 V.