共查询到20条相似文献,搜索用时 140 毫秒
1.
简要介绍了利用深反应离子刻蚀制作折叠波导慢波结构的现状及制作的工艺流程。对深反应离子刻蚀掩膜制作即光刻工艺,以及折叠波导慢波结构的深刻加工进行了深入的研究。详细分析了各光刻工艺对光刻胶图形的影响,尤其是前烘对光刻胶图像侧壁垂直度的影响;在深反应离子刻蚀中,还详细分析了刻蚀时间、下电极功率以及刻蚀气体气压对刻蚀结果的影响。经参数优化后获得最佳工艺参数,并制作出带有电子注通道的W波段折叠波导慢波结构,慢波结构深为946μm,侧壁垂直度为91°,电子注通道深为225μm,侧壁垂直度为90°。 相似文献
2.
通过实验和分析,说明参数优化后,邻频道干扰保护率完全符合系统要求,从而就保护率的角度说明了采用这组优化参数的可行性。 相似文献
3.
4.
RFMEMS开关是用MEMS技术形成的新型电路元件,与传统的半导体开关器件相比具有插入损耗低、隔离度大等优点,将对现有雷达和通信中RF结构产生重大影响。文章介绍了RFMEMS开关的基本工艺流程设计,工艺制作技术的研究。实验解决了种子层技术、聚酰亚胺牺牲层技术、微电镀技术的工艺难题,制作出了RFMEMS开关样品,基本掌握了RFMEMS器件的制作工艺技术。RFMEMS开关样品测试的技术指标为:膜桥高度2μm~3μm、驱动电压<30V、频率范围0~40GHz、插入损耗≤1dB、隔离度≥20dB,样品参数性能达到了设计要求。 相似文献
5.
6.
7.
文章针对双色阻焊字符化锡PCB生产制作流程进行了相关测试和比对,并根据实际生产状况选定最优工艺流程,期间通过优化资料和生产参数改善了化锡后掉油缺陷,满足了生产和品质需求. 相似文献
8.
9.
本文描述2μm外延N阱CMOS工艺的研究,在工艺模拟和实验的基础上制定了合理的、可行的工艺流程.在工艺中成功地应用了全离子注入和红外瞬态退火技术.实验结果表明,2μm CMOS 器件具有优良的特性,适合超大规模集成电路的要求.5伏工作电压,21级2μmCMOS反相器环振链的级延时是0.48ns,每级的延时功耗乘积是0.49pJ.P~-/P~+外延层结合N阱伪集电极保护环,可在CMOS电路中最易产生Latch-up的I/O电路部分保证不发生Latch-up.本工艺可以应用于超大规模集成电路的制作. 相似文献
10.
11.
针对三维集成电路中的关键技术硅通孔的电特性,使用传输线理论提取了其单位长度RL-GC参数。将硅通孔等效为传输线,利用HFSS仿真结果并结合传输线理论给出了具体的参数提取方法。计算结果表明,硅通孔单位长度RLGC 参数呈现较强的频变特性,当频率从1 MHz增加到20 GHz时,单位长度的电阻和导纳分别从0.45 mΩ/μm和2.5μS/μm增加到2.5 mΩ/μm和17μS/μm,而单位长度电感和电容分别从8.7 pH/μm和8.8 fF/μm减小至7.5 pH/μm和0.2 fF/μm。与传统的阻抗矩阵和导纳矩阵提取方法相比,该方法具有结果绝对收敛和适用频率高等诸多优点,可进一步应用于三维集成电路的仿真设计。 相似文献
12.
13.
针对高精度红外遥感成像的应用需求,提出了高空间分辨率、高噪声等效温差和大幅宽的中波/长波红外双谱段遥感成像技术方案,在太阳同步轨道获取地面目标的中波和长波红外辐射信息,谱段范围分别为3~5μm和8~12μm,中波红外谱段空间分辨率优于5 m,长波红外谱段空间分辨率优于10 m,幅宽大于20 km,噪声等效温差优于60 mK。根据噪声等效温差和光学传递函数等要求优化了光学系统指标参数,分析了二次成像同轴三反光学系统的冷光阑匹配原理,计算了光学系统初始结构参数,设计了光阑匹配型和出瞳匹配型中波/长波红外双谱段一体化光学系统,比较了两种方案光学系统的冷光阑匹配效果。 相似文献
14.
15.
M. V. Yakushev D. V. Brunev V. S. Varavin V. V. Vasilyev S. A. Dvoretskii I. V. Marchishin A. V. Predein I. V. Sabinina Yu. G. Sidorov A. V. Sorochkin 《Semiconductors》2011,45(3):385-391
Results of studies of the molecular beam epitaxial growth of HgCdTe alloys on Si substrates as large as 100 mm in diameter
are presented. Optimum conditions for obtaining HgCdTe/Si(310) heterostructures of the device quality for the spectral range
of 3–5 μm are determined. The results of measurements and discussion of photoelectric parameters of an infrared photodetector
of a format of 320 × 256 elements with a step of 30 μm based on a hybrid assembly of a matrix photosensitive cell with a Si
multiplexer are presented. A high stability of photodetector parameters to thermocycling from room temperature to liquid-nitrogen
temperature is shown. 相似文献
16.
《Electron Devices, IEEE Transactions on》1985,32(7):1246-1258
When short-channel MOSFET transistor models are compared to experimental data, the uncertainty in some of the physical input variables often requires that some of the input variables be adjusted to fit the data. This uncertainty is increased by a lack of knowledge of process sensitivity information on critical parameters. These uncertainties have been eliminated using a two-dimensional finite-element model of a MOSFET with no free parameters. The model is compared to four self-aligned silicon-gate n-channel MOSFET's with channel lengths of 0.80, 1.83, 2.19, and 8.17 µm. The 0.80, 1.83, and 8.17-µm devices have phosphorus sources and drains. The 2.19-µm device has an arsenic source and drain. These devices span the range of channel lengths from a short-channel device, totally dominated by velocity saturation and source-drain profile shape, to a long-channel device, well characterized by a long-channel model. Using the data obtained from the measurements described in this work, it is possible to model the drain current for all of the transistors studied without adjustable parameters. Transistors with 0.80-µm channel length differ in model input from those with 8.17-µm channel length only in the length of the polysilicon gate. If sufficiently accurate parameters are available, these methods allow the characteristics of submicrometer transistors to be predicted with ±5-percent accuracy. These simulations show that the observed short-channel effects can be accounted for by existing mobility data and a simple empirical model of these data. Triode and saturation effects are dominated by two-dimensional drain field penetration of the channel region. Subthreshold effects are caused by distortion of fields in the entire channel region by the drain field. 相似文献
17.
以应 0 .5 μm技术之需而设的一套超纯水精处理系统为实例 ,介绍了其工艺流程及特点 ,给出各项水质参数的实测数据 ,进而评述≤ 0 .2 5 μm/ 8英寸线的水质评价项目及其限定值、分析手段和应具有的在线检测仪表。 相似文献
18.
采用激光微熔覆方法制备了空芯薄膜电感,着重研究了激光功率密度对电感线宽影响,以及薄膜电感的结构参数变化对电感电性能影响。结果表明,线宽随激光功率密度增大而增大;电感量随着圈数增多、中心线间距增大、线宽变大而增大。通过优化激光工艺和结构参数,制备了面积5 mm×5 mm和9 mm×9 mm,线宽100 μm和120 μm,线中心间距250 μm和500 μm,圈数8和16,厚度1 μm的空芯回字型电感,在测试频率100 kHz~1 MHz条件下,电感量为240 nH±3 nH~1.2 μH±3 nH,单位面积电感量可达14.81 nH/mm2。通过实验证明,采用激光微熔覆法制备的微电感,在同样形状和面积下,可提高电感量。 相似文献
19.
Ma T. Ueda D. Lee W.-S. Adkisson J. Harris J.S. Jr. 《Electron Device Letters, IEEE》1988,9(12):657-659
The DC performance of GaAs/AlAs heterojunction bipolar transistors (HBTs) grown on silicon substrates with buffer layers ranging from 0 to 5 μm was investigated. Current gain, collector-emitter breakdown voltage, emitter-base and collector-base diode ideality factors, and breakdown voltages were measured as the buffer layer thickness was varied between 0 and 5 μm. The current gain steadily increases with increasing buffer layer thickness until the layer reaches 3 μm. However, the other DC parameters are relatively insensitive to the buffer layer thickness. A small-signal current gain of 60 is typically achieved for devices with 6×6-μm2 emitters at a density of 6×104 A/cm2 when the buffer layer is ⩾3 μm 相似文献
20.
Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5/spl times/5 /spl mu/m/sup 2/ emitter area over a wide range of bias points. 相似文献