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采用Jazz0.18μm RF CMOS工艺设计并实现应用于MB-OFDM超宽带频率综合器的4.224GHz电感电容正交压控振荡器。通过解析的方法给出了电感电容正交压控振荡器的模型,并推导出简洁的公式解释了相位噪声性能与耦合因子的关系。测试结果显示,核心电路在1.5V电源电压下,消耗6mA电流,频率调谐范围为3.566~4.712GHz;在主频频偏1MHz处的相位噪声为-119.99dBc/Hz,对应的相位噪声的FoM(Figure-of-Merit)为183dB;I、Q两路信号等效的相位误差为2.13°。 相似文献
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针对开关电容阵列结构压控振荡器(VCO)的非线性粗调谐特性,提出了一种新型的电容阵列结构线性宽带VCO。该VCO只有1组MOS电容、4路数字控制信号控制电阻阵列和电流源阵列,得到1组偏置直流电压以进行粗调谐;1路模拟控制电压通过电流叠加的方式叠加在MOS电容的控制电压上,进行精细调谐。电阻阵列控制不同数字控制信号下的调谐增益KVCO,与电流源阵列共同产生直流偏置电压以控制步进频率,可以灵活地精确设置不同数字信号控制下的电容值大小,取得线性的粗调谐特性。仿真结果显示,该VCO的调谐范围为5.00~5.87 GHz,步进频率为166 MHz,调谐增益KVCO变化范围为-900~-450 MHz/V,不同数字控制信号下的调谐特性几乎相同,比传统二进制电容阵列拥有更好的粗调谐特性。1.8 V供电电压下,电路最大消耗4.43 mA直流电流。 相似文献
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采用SMIC 65 nm标准CMOS工艺,设计了一种新型的低功耗电容电感压控振荡器(LC VCO)。采用幅度监测负反馈技术,保证振荡器正常启动并且工作于C类工作状态,最大程度地增加输出摆幅。与常规C类电容电感压控振荡器不同,采用电流复用技术可以在保证性能不变的情况下使VCO的功耗下降50%。后仿真结果表明,在1.2 V电源电压下,该压控振荡器的功耗为1.1 mW,相位噪声为-123 dBc/Hz @1 MHz,FOM为190,振荡频率范围为2.3~2.6 GHz,可调谐范围为12%。 相似文献
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基于TSMC RF 0.18 μm CMOS工艺,设计了一种可应用于IEEE 802.11ac标准的5 GHz宽带LC压控振荡器。该振荡器采用了NMOS交叉耦合结构,同时采用了5位开关电容阵列以扩展调谐范围。开关电容阵列使压控振荡器的增益KVCO保持在一个较小的值,有效地降低了压控振荡器的相位噪声。后仿真结果表明,该压控振荡器在1.8 V电源电压下,功耗为9 mW,频率调谐范围为4.52~5.56 GHz,在偏离中心频率1 MHz处仿真得到的相位噪声为-124 dBc/Hz。该LC 压控振荡器的版图尺寸为320 μm×466 μm。 相似文献
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设计了一个具有开关电容阵列和开关电感阵列的1.76~2.56GHz CMOS压控振荡器。电路采用0.18µm 1P6M CMOS工艺实现。经测试,压控振荡器的频率调谐范围为37%。在频率调谐范围内及1MHz频偏处,相位噪声变化范围为-118.5dBc/Hz至 -122.8dBc/Hz。在1.8V电源电压下,功耗约为14.4mW。基于具有电容阵列和电感阵列的可重构LC谐振回路,对压控振荡器的调谐范围参数进行了分析和推导,所得结果为电路设计提供了指导。 相似文献
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基于TSMC 0.13μm CMOS工艺设计并实现了应用于IMT-Advanced和UWB系统的双频段宽带频率合成器中的电感电容压控振荡器(LC-VCO)。此压控振荡器的设计采用了开关电流源、开关交叉耦合对和噪声滤波等技术,以优化电路的相位噪声,功耗,振荡幅度,调谐范围等性能。为达到宽的调谐范围,核心电路采用了4比特可重构的开关电容调谐阵列。整个芯片包括焊盘面积为1.11′0.98 mm2。测试结果表明,在1.2V电源电压下,两个频段压控振荡器所消耗的电流分别为3mA和4.5mA,压控振荡器的调谐范围为3.86~5.28GHz和3.14~3.88GHz。在振荡频率3.5GHz和4.2GHz上,1MHz频偏处,压控振荡器的相位噪声分别为-123dBc/Hz与-119dBc/Hz。 相似文献
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This paper presents a new CMOS LC-VCO with a 2.95-3.65 GHz tuning range. The large tuning range is achieved by tuning curve compensation using a novel varactor configuration, which is mainly composed of four accumulation-mode MOS varactors (A-MOS) and two bias voltages. The proposed varactor has the advantages of optimizing quality factor and tuning range simultaneously, linearizing the effective capacitance and thus greatly reducing the amplitude-to-phase modulation (AM-PM) conversion. The circuit is validated by simulations and fab-ricated in a standard 0.18 μm 1P6M CMOS process. Measured phase noise is lower than -91 dBc at 100 kHz offset from a 3.15 GHz carrier while measured tuning range is 21.5% as the control voltage varies from 0 to 1.8 V. The VCO including buffers consumes 2.8 mA current from a 1.8 V supply. 相似文献
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Gil M. Damm C. Giere A. Sazegar M. Bonache J. Jakoby R. Martin F. 《Electronics letters》2009,45(8):417-418
Split-ring resonators (SRRs) implemented using ferroelectric materials to modify their resonance frequency by means of a tuning voltage are presented for the first time. SRRs have been used to load a microstrip transmission line on a multilayered substrate including a thick film of barium-strontium-titanate (BST) to obtain a tunable stopband response. The characteristics of the BST layer allow the application of 140 V as tuning voltage to obtain frequency tunability values of around 12.5 . The applied technology is suitable for the fabrication of cost-effective and reliable planar microwave devices. 相似文献
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Sheng-Lyang Jang 《International Journal of Electronics》2013,100(9):1175-1183
This article presents a new low-voltage bottom-series coupled quadrature voltage-controlled oscillator (QVCO), which consists of two n-core cross-coupled VCOs with the bottom-series coupling transistors. The low-voltage operation is obtained via an inductive gate voltage boosting technique. The proposed CMOS QVCO has been implemented with the TSMC 0.18?µm CMOS technology and the die area is 0.897?×?0.767?mm2. At the supply voltage of 0.7?V, the total power consumption is 1.5?mW. The free-running frequency of the QVCO is tuneable from 3.77 to 4.12?GHz as the tuning voltage is varied from 0.0 to 0.7?V. The measured phase noise at 1?MHz frequency offset is ?123.35?dBc/Hz at the oscillation frequency of 4.12?GHz and the figure of merit of the proposed QVCO is ?193.5?dBc/Hz. 相似文献
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The influence of the gate doping type of the MOS varactor on frequency tuning, phase noise, and frequency sensitivity to supply-voltage variations of a fully integrated inductance-capacitance voltage-controlled oscillator (LC-VCO) is presented. Three varactors in multifinger layout with shallow trench isolation (STI) are compared. The polysilicon gate is either entirely n- or p-doped or the fingers have alternating n and p doping. Differences in capacitance and quality factor are shown. Two identical VCOs with the varactors having n gates or np gates are realized. Homogenous doping increases the VCO tuning range to 1.31 GHz (/spl plusmn/20%) in comparison to 1.06 GHz (/spl plusmn/15%) obtained by mixed doping. However, mixed doping has the advantages of more linear VCO frequency tuning, lower close-in phase noise, and reduced maximum sensitivity to variations in supply voltage. Several varactor parameters are introduced. They allow prediction of the influence of varactors on the performance of a given VCO. With a current consumption of only 1 mA from a supply voltage of 1.5 V, both VCOs show a phase noise of -115 dBc/Hz at 1-MHz offset from a 4-GHz carrier and a VCO figure of merit of -185.3 dBc/Hz. 相似文献
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Ching-Chich Leu Shih-Hsiung Chan Haur-Ywh Chen Ray-Hua Horng Dong-Sing Wuu Luh-Huei Wu Tiao-Yuan Huang Chun-Yen Chang Simon Min Sze 《Microelectronics Reliability》2000,40(4-5)
The effects of the O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 (BST) thin films were investigated. As a result of the exposure of the as-deposited or the annealed BST films to the O2 plasma, the leakage current density of the BST films can be improved. Typically, the leakage current density can decrease by three orders of magnitude as compared that of the non-plasma treated sample at an applied voltage of 1.5 V. It is found that the plasma treatment changes the surface morphology. The capacitance of the BST films was reduced by 10%30%. The improvement of the leakage current density and the reduction of a dielectric constant for the plasma treated samples could be attributed to the reduction of carbon contaminations of BST thin films. The 10 year life time of the time-dependent dielectric breakdown (TDDB) studies indicates that all the samples have a life time of over 10 years of operation at a voltage bias of 1 V. 相似文献
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225MHz-400MHz压控调谐滤波器的实现 总被引:3,自引:0,他引:3
在跳频收发系统中,在射频前端加入调谐滤波器可以提高系统的抗阻塞干扰能力。文章详细介绍了一种225MHz-400MHz压控调谐滤波器的实现方法,该方法主要是通过电压改变变容二极管的电容,从而改变带通滤波器的中心频率,从而实现压控滤波。因此通过分段线性电压来控制带通中心频点就可以对跳频信号进行跟踪滤波。 相似文献