The structural and optical properties of ZnO nanowire arrays prepared by hydrothermal synthesis method

ZnO nanowire arrays have been grown on the ZnO film-coated silicon (100) substrates by hydrothermal method, and the deposited nanowires are found to have a uniform size distribution with sharp hexagonal-shaped tips. The structural and optical properties of the nanowires were investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and cathodoluminescence (CL) techniques. The XRD and SEM results demonstrate that the well-aligned ZnO nanowires are single crystalline structure formed along the c-axis orientation. TEM analysis further confirms that the ZnO nanowires are highly preferred grown along the (002) crystal plane. The spacing between adjacent (002) lattice planes is estimated as 0.52 nm. The optical properties of the nanowires were measured using CL after annealing in oxygen and nitrogen atmospheres at 550 °C for various times. The CL spectra in the visible spectrum exhibit two weak deep-level emission bands that may be attributed to the intrinsic or extrinsic defects. It can be observed that the ZnO nanowires show different optical behaviors after various annealing times. The dependence of the optical properties on the annealing conditions is also discussed.     

Synthesis,characterization and growth mechanism of ZnO nanowires on NiCl<Subscript>2</Subscript>-coated Si substrates

Well-crystallized ZnO nanowires have been successfully synthesized on NiCl₂-coated Si substrates via a carbon thermal reduction deposition process. The pre-deposited Ni nanoparticles by dipping the substrates into NiCl₂ solution can promote the formation of ZnO nuclei. The as-synthesized nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectrum. The results demonstrate that the as-fabricated nanowires with about 60 nm in diameter and several tens of micrometers in length are preferentially arranged along [0001] direction with (0002) as the dominate surface. Room temperature PL spectrum illustrates that the ZnO nanowires exist a UV emission peak and a green emission peak, and the peak centers locate at 387 and 510 nm. Finally, the growth mechanism of the nanowires is briefly discussed.     

Fabrication of large-scale ultra-fine Cd-doped ZnO nanowires

We demonstrate bulk synthesis of highly crystal Cd-doped ZnO nanowires by using (Cd + Zn) powders at 600 °C. These mass ultra-fine ZnO nanowires with about 0%, 1%, 4% and 8% Cd so obtained have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), selected area electron diffraction (SAED) and high-resolution TEM (HRTEM). They have the uniform diameter of about 20 nm and several hundred microns in length. The growth of the as-synthesized nanowires is suggested for self-catalyzed vapor–liquid–solid.     

Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism

Needle-like silicon nanowires have been grown using gold colloid as the catalyst and silane (SiH₄) as the precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Si nanowires produced by this method were unique with sharpness below 3 nm. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction technique (XRD) confirmed the single crystalline growth of the Si nanowires with (111) crystalline structure. Raman spectroscopy also has revealed the presence of crystalline Si in the grown Si nanowire body. In this research, presence of a gold nanoparticle on tip of the nanowires proved vapor–liquid–solid growth mechanism.     

Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia

GaN nanowires were synthesized by ammoniating Ga₂O₃ films on Ti layers deposited on Si (111) substrates at 950 °C. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD, FTIR and HRTEM studies showed that these nanowires were hexagonal GaN single crystals. SEM observation demonstrated that these GaN nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate.     

Microwave-assisted synthesis of ZnO nanostructure flowers

Hexagonal ZnO nanostructure flowers were successfully synthesized from a 1:15 molar ratio of Zn(CH₃COO)₂2H₂O to KOH using 180 W microwave radiation for 20 min. The product phase was detected using X-ray diffraction (XRD) and selected area electron diffraction (SAED). A diffraction pattern was also simulated and was found to be in accordance with those of the experiment and the JCPDS database. Raman spectrometry revealed the presence of four vibration peaks at 337.85, 381.13, 437.54 and 583.30 cm^? 1. The product, spear-shaped nanorods in flower-like clusters, was characterized using both scanning electron microscopy (SEM) and transmission electron microscopy (TEM). High resolution TEM (HRTEM) showed that growth of the spear-shaped nanorods was in the [001] direction, which was normal to the (002) planes composing a lattice fringe of the nanorods. A formation mechanism of hexagonal ZnO nanostructure flowers was also proposed.     

Anionic surfactant-assisted hydrothermal synthesis of high-aspect-ratio ZnO nanowires and their photoluminescence property

ZnO nanowires with high-aspect-ratio of up to ca. 600 were synthesized in a quaternary reverse microemulsion containing sodium dodecyl sulfate (SDS) / water / heptane / n-hexane via a hydrothermal method. SDS, as an anionic surfactant, plays an important role in the formation of morphologies. Subsequently, we studied lots of key influencing factors including the molar ratio (w) value of NaOH to Zn(OAc)₂, the reaction temperature, and the instance without the quaternary reverse microemulsion. The selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM) reveal the single-crystal nature of the ZnO nanowires. The morphologies and crystalline structure of the as-obtained products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and powder X-ray diffraction (XRD), respectively. Through this route, we can obtain a mass of products and the method is both convenient and reproducible. Finally, we measured the photoluminescence (PL) spectra and found that the ZnO nanowires exhibited green-orange emission at 525 nm and short ultraviolet emission at 380 nm and the ZnO nanomaterials with different aspect ratio (length to diameter) (L / D) showed PL intensity disciplinary change. Aiming at this phenomenon, we propose a reasonable mechanism to explain the PL spectra of the ZnO nanomaterials in detail.     

Synthesis,structural and optical characterization of Ni-doped ZnO nanoparticles

Nanocrystalline Zn_1−x Ni _x O (x = 0.00, 0.02, 0.04, 0.06, 0.08) powders were synthesized by a simple sol–gel autocombustion method using metal nitrates of zinc, nickel and glycine. Structural and optical properties of the Ni-doped ZnO samples annealed at 800 °C are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis using X-rays (EDAX), UV–visible spectroscopy and photoluminescence (PL). X-ray diffraction analysis reveals that the Ni-doped ZnO crystallizes in a hexagonal wurtzite structure and secondary phase (NiO) was observed with the sensitivity of XRD measurement with the increasing nickel concentration (x ≥ 0.04). The lattice constants of Ni-doped ZnO nanoparticles increase slightly when Ni²⁺ is doped into ZnO lattice. The optical absorption band edge of the nickel doped samples was observed above 387 nm (3.20 eV) along with well-defined absorbance peaks at around 439 (2.82 eV), 615(2.01 eV) and 655 nm (1.89 eV). PL measurements of Ni-doped samples illustrated the strong UV emission band at ~3.02 eV, weak blue emission bands at 2.82 and 2.75 eV, and a strong green emission band at 2.26 eV. The observed red shift in the band gap from UV–visible analysis and near band edge UV emission with Ni doping may be considered to be related to the incorporation of Ni ions into the Zn site of the ZnO lattice.     

Synthesis and optical properties of CdS nanowires by a simple chemical deposition

CdS nanowires were prepared by a paired cell method, using highly ordered porous anodic alumina (PAA) membranes as templates. The morphology, structure, and composition of these nanowires were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDS), and selected area electron diffraction (SAED) pattern. SEM images indicated that nanowires arrays are highly ordered and coincide with the contours of PAA. The EDS analysis, combined with HRTEM images and SEAD patterns, confirmed the formation of CdS. The formation and growth mechanism of CdS nanowires, as well as the optical properties, were also analyzed in details. The results indicated that the formation and growth of CdS nanowires experience from initial nuclei, nanoparticles, linear pearl-chain structures to final nanowires, attributed to electrostatic adsorption and ions diffusion. A strong emission with a maximum around 430 nm was observed from the synthesized CdS nanowires, which was attributed to the recombination of trapped electron/hole pairs. The absorption edge in UV–Vis spectrum of CdS/PAA nanoarrays showed a blue shift due to the quantum confinement effects. The technique can be used to fabricate other compound nanowires and newly light-emitting semiconductor materials.     

Fabrication and characterization of tetrapod-like ZnO nanostructures prepared by catalyst-free thermal evaporation

Tetrapod-like ZnO nanostructures were fabricated on ZnO-coated sapphire (001) substrates by two steps: pulsed laser deposition (PLD) and catalyst-free thermal evaporation process. First, the ZnO films were pre-deposited on sapphire (001) substrates by PLD. Then the ZnO nanostructures grew on ZnO-coated sapphire (001) substrate by the simple thermal evaporation of the metallic zinc powder at 900 °C in the air without any catalysts. The pre-deposited ZnO films by PLD on the substrates can provide growing sites for the ZnO nanostructures. The as-synthesized ZnO nanostructures were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectrum (FTIR). The results show that the tetrapod-like ZnO nanostructures are highly crystalline with the wurtzite hexagonal structure. Photoluminescence (PL) spectrum of as-synthesized nanostructures exhibits a UV emission peak at ～ 389 nm and a broad green emission peak at ～ 513 nm. In addition, the growth mechanism of ZnO nanostructures is also briefly discussed.     

Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates

Needle-shaped GaN nanowires have been synthesized on Si (111) substrate through ammoniating Ga₂O₃/MgO films under flowing ammonia atmosphere at the temperature of 950 °C. The as-synthesized GaN nanowires were characterized by X-ray diffraction (XRD), Fourier transformed infrared (FTIR) spectroscopy, scanning electron microscope (SEM) and high-resolution transmission electron microscopy (HRTEM). The results demonstrate that these nanowires are hexagonal GaN and possess a smooth surface with an average diameter about 200 nm and a length ranging from 5 μm to 15 μm. In addition, the diameters of these nanowires diminish gradually. The growth mechanism of crystalline GaN nanowires is discussed briefly.     

Synthesis of ZnO nanosheets by room-temperature decomposition of a layered precursor synthesized by microwave heating

ZnO nanosheets with the wurtzite structure have been successfully synthesized via a microwave-assisted solution method. The thicknesses of ZnO nanosheets are in the range of 5–10 nm and lateral sizes up to 1 μm. The surfaces of ZnO nanosheets are planes of wurtzite structure. The as-prepared products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM). The optical and thermal properties were investigated with UV–Visible absorption spectra, thermogravimetric analysis (TG) and differential scanning calorimetric analysis (DSC).     

Linear field emission cathode with ZnO grown in aqueous solutions

A new type of linear field emission cathode with ZnO nanostructure grown on nickel wires was prepared by hydrothermal approach. The obtained ZnO nanotapers were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results indicated that the ZnO nanotapers with sharp tips were high quality single crystals, and grow along (002) direction. The field emission properties were investigated by ZnO nanotapers on nickel wire as the cathode in the centre of a cylindrical ITO anode. The field enhancement factor β was about 2.23 × 10⁴ cm⁻¹, which improved greatly for the cylindrical configuration and sharp geometry of the ZnO nanotapers tip.     

Ultraviolet photodetectors made from SnO2 nanowires

SnO₂ nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO₂ nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO₂ nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 °C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.     

Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

The GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga₂O₃/ZnO films at 900 °C. The structure and morphology of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), scanning electron microscopy (SEM) and field-emission transmission electron microscopy (FETEM). The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm, which are conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.     

A simple microwave-assisted decomposing route for synthesis of ZnO nanorods in the presence of PEG400

In the paper, a simple microwave-assisted decomposing reaction in the presence of PEG400 has been successfully developed to synthesize ZnO nanorods with 10-25 nm of diameter and 60-200 nm of length. The product was analyzed and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and HRTEM. Ultraviolet-visible (UV-vis) absorption peak of ZnO nanorods shows a distinct blue shift from that of the bulk and the Photoluminescence (PL) spectrum exhibits a strong near-band-edge emission at 385 nm. Further experiments have also been designed, and the results show that microwave radiation and surfactant PEG400 all played an important role on the formation of ZnO nanorods.     

Gallium nitride nanowires doped with magnesium

GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga₂O₃ films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein-Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly.     

Synthesis of different architectures like stars, multipods, ellipsoids and spikes of zinc oxide by surfactantless precipitation

Zinc oxide with different morphologies like stars, multipods, ellipsoids and spikes was synthesized using zinc nitrate and sodium hydroxide in the absence of surfactants. Seed mediation was found to be essential for the formation of ZnO nanospikes. Synthesized ZnO samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV-visible diffuse reflectance spectroscopy (UV-vis-DRS) and energy dispersive analysis by X-rays (EDAX) techniques. The predominant c-axis growth of hexagonal lattice was observed in ZnO anisotropic particles. TEM analysis revealed the formation of two types of ZnO ellipsoid particles. Concentration of the reactants was found to have a role in controlling the morphology of the resulting ZnO. Mechanism of formation of varying morphologies of ZnO particles has been proposed.     

Microwave synthesis and characterization of ZnO with various morphologies

ZnO micro- and nanostructures with a variety of morphologies have been synthesized using Zn(NO₃)₂·6H₂O and pyridine by a microwave-assisted aqueous solution method at 90 °C for 10 min. The pyridine has a significant influence on the morphology of ZnO. Various morphologies of ZnO (hexagonal columns, linked hexagonal needles, hollow structures, and hexagonal nanorings) were obtained by adjusting the concentration of pyridine. The effect of the type of other alkaline additive (aniline and triethanolamine) on the morphology of ZnO was also investigated. The products were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM).     

Synthesis of highly oriented iron sulfide nanowires through solvothermal process

Large-scale productions of highly oriented FeS_2−x (x=0.09) nanowires have been achieved by a simple low-cost, low-temperature solvothermal process. The X-ray diffraction (XRD) pattern revealed that the nanowires crystallized with cubic pyrite phase. Scanning electron microscopic (SEM) observation showed bundles of oriented nanowires with very high aspect ratio. Transmission electron microscopic (TEM) observation showed the nanowires to be smooth and uniform throughout their length. High-resolution transmission electron microscopy (HRTEM) and electron diffraction pattern revealed the single-crystalline nature of the nanowires.