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1.
A 600-MHz single-chip multiprocessor, which includes two M32R 32-bit CPU cores , a 512-kB shared SRAM and an internal shared pipelined bus, was fabricated using a 0.15-/spl mu/m CMOS process for embedded systems. This multiprocessor is based on symmetric multiprocessing (SMP), and supports modified-exclusive-shared-invalid (MESI) cache coherency protocol. The multiprocessor inherits the advantages of previously reported single-chip multiprocessors, while its multiprocessor architecture is optimized for use as an embedded processor. The internal shared pipelined bus has a low latency and large bandwidth (4.8 GB/s). These features enhance the performance of the multiprocessor. In addition, the multiprocessor employs various low-power techniques. The multiprocessor dissipates 800 mW in a 1.5-V 600-MHz multiprocessor mode. Standby power dissipation is less than 1.5 mW at 1.5 V. Hence, the multiprocessor achieves higher performance and lower power consumption. This paper presents a single-chip multiprocessor architecture optimized for use as an embedded processor and its various low-power techniques.  相似文献   

2.
This paper describes a slight-boost scheme to improve a transistor performance in system large-scale integrated circuits, which integrate logic circuits and 1-Tr/1-C DRAMs. In this scheme, an embedded SDRAM core has been developed for graphic and multimedia applications. Its maximum operating frequency is 166 MHz, with a peak data rate of 5.3 GB/s. As well, a fast row-address access time of 22 ns has been achieved. The SDRAM core has been fabricated by means of a 0.3-μm quad-polysilicon, triple metal, triple-well CMOS process. This SDRAM core has a block write function, enhanced by a multiselect block write scheme, and a synchronous direct memory-access test circuit has been implemented to reduce the number of test pads  相似文献   

3.
This paper describes an I/O scheme for use in a high-speed bus which eliminates setup and hold time requirements between clock and data by using an oversampling method. The I/O circuit uses a low jitter phase-locked loop (PLL) which suppresses the effect of supply noise. Measured results show peak-to-peak jitter of 150 ps and r.m.s. jitter of 15.7 ps on the clock line. Two experimental chips with 4-pin interface have been fabricated with a 0.6 μm CMOS technology, which exhibits the bandwidth of 960 Mb/s per pin  相似文献   

4.
This paper describes a validation system for an SLDRAM interface. The SLDRAM system utilizes two techniques to achieve a high data-transfer rate with a conventional module mounting style. The first technique is a source-synchronization scheme. Since the chip that transmits data also supplies the data clock, the clock and data are completely synchronous. The second is the timing vernier technique. A wait time for output data is programmable in each SLDRAM. Therefore, the time at which data arrive at the controller from any SLDRAM can be set by the controller with a 200-ps step size. The validation chip is designed to emulate these operations. The chip is fabricated using a 0.35-μm CMOS process technology and packaged in a conventional 0.65-mm pitch thin small out-line package, mounted on a single-chip module, and put into an eight-module system. A stub series terminated logic (SSTL)-like interface is adopted for high-speed signals. From system-level measurements, the data eye width of 600 ps is obtained at a data rate of 600 Mbps. Errorless data transmission is observed in both read and write operations in a bit-error rate testing. The validation system has successfully demonstrated a data-transmission rate of 1.2 GB/s (600 Mbit/s/pin) using source-synchronization and timing vernier techniques at the supply voltage of 2.5 V  相似文献   

5.
A low-power three-dimensional (3-D) rendering engine is implemented as part of a mobile personal digital assistant (PDA) chip. Six-megabit embedded DRAM macros attached to 8-pixel-parallel rendering logic are logically localized with a 3.2-GB/s runtime reconfigurable bus, reducing the area by 25% compared with conventional local frame-buffer architectures. The low power consumption is achieved by polygon-dependent access to the embedded DRAM macros with line-block mapping providing read-modify-write data transaction. The 3-D rendering engine with 2.22-Mpolygons/s drawing speed was fabricated using 0.18-/spl mu/m CMOS embedded memory logic technology. Its area is 24 mm/sup 2/ and its power consumption is 120 mW.  相似文献   

6.
A 4:1 SERDES IC suitable for SONET OC-192 and 10-Gb/s Ethernet is presented. The receiver, which consists of a limiting amplifier, a clock and data recovery unit, and a demultiplexer, locks automatically to all data rates in the range 9.95-10.7 Gb/s. At a bit error rate of less than 10/sup -12/, it has a sensitivity of 20 mV. The transmitter comprises a clock multiplying unit and a multiplexer. The jitter of the transmitted data signal is 0.2 ps RMS. This is facilitated by a novel notched inductor layout and a special power supply concept, which reduces cross-coupling between the transmitter and receiver. Integrated in a 0.13-/spl mu/m CMOS technology, the total power consumption from both 1.2- and 2.5-V supplies is less than 1 W.  相似文献   

7.
This paper describes a high-speed six-port router component with a sustainable I/O bandwidth in excess of 30 GB/s. The device uses three distinct clock domains to connect low-speed processor and I/O nodes to a high-speed switch fabric capable of data rates of up to 6.4 Gb/s per wire on copper system interconnects. The router component is fabricated in 0.18-μm bulk CMOS technology. The 100-mm2 device contains approximately 6.6 million transistors and consumes 21 W at a link transfer rate of 3.2 Gb/s and a supply voltage of 1.75 V. Integrated on a single component, the router core and the simultaneous bidirectional links form a building block useful in the realization of large high-bandwidth multiprocessor systems  相似文献   

8.
Recently, the level of realism in PC graphics applications has been approaching that of high-end graphics workstations, necessitating a more sophisticated texture data cache memory to overcome the finite bandwidth of the AGP or PCI bus. This paper proposes a multilevel parallel texture cache memory to reduce the required data bandwidth on the AGP or PCI bus and to accelerate the operations of parallel graphics pipelines in PC graphics cards. The proposed cache memory is fabricated by 0.16-μm DRAM-based SOC technology. It is composed of four components: an 8-MB DRAM L2 cache, 8-way parallel SRAM L1 caches, pipelined texture data filters, and a serial-to-parallel loader. For high-speed parallel L1 cache data replacement, the internal bus bandwidth has been maximized up to 75 GB/s with a newly proposed hidden double data transfer scheme. In addition, the cache memory has a reconfigurable architecture in its line size for optimal caching performance in various graphics applications from three-dimensional (3-D) games to high-quality 3-D movies  相似文献   

9.
This contribution describes the design and performance testing of an Advanced Encryption Standard (AES) compliant encryption chip that delivers 2.29 GB/s of encryption throughput at 56 mW of power consumption in a 0.18-/spl mu/m CMOS standard cell technology. This integrated circuit implements the Rijndael encryption algorithm, at any combination of block lengths (128, 192, or 25 bits) and key lengths (128, 192, or 256 bits). We present the chip architecture and discuss the design optimizations. We also present measurement results that were obtained from a set of 14 test samples of this chip.  相似文献   

10.
A simultaneous bidirectional transceiver logic (SBTL), for a 0.25 μm CMOS embedded array, has a low-voltage-swing input flip-flop circuit and an output flip-flop with a boundary scan to enable a 1.1-Gb/s data transfer per LSI pin with a 550-MHz system clock. Clock skew and jitter minimization enables high bandwidth in a phase-locked system. Measured latency time for transmission is less than 3.0 ns during simultaneous switching mode when the cable length is 18 cm. Average power consumption is 12 mW per pin at 550 MHz. A low-noise output buffer and a controlled collapse chip connection (C4)-based 1595-pin package with on-package capacitors achieve 100-byte data bus. The maximum data bandwidth per LSI is 110 GB/s  相似文献   

11.
本文展示了一个12位400MS/s CMOS工艺的数模转换器。这款数模转换器采用6 2 4的分段结构和优化的开关方案来提升动态和静态性能。在400MS/s采样频率和10MHz输入信号频率的条件下,测试得到的无杂散动态范围达到77.18 dB。电路采用1.8V单电压供电,最大输出电流35mA。芯片采用标准1P-6M 0.18μm CMOS工艺制造,核心面积为0.6 mm2。  相似文献   

12.
An 18-Mbit CMOS pipeline-burst cache SRAM achieves a 12.3-Gbyte/s data transfer rate with 1.54-Gbit/s/pin I/O's. The SRAM is fabricated on a 0.18-μm CMOS technology. The 14.3×14.6-mm2 SRAM chip uses a 5.59-μm2, six-transistor cell. Circuit techniques used for achieving high bandwidth include fully self-timed array architecture, segmented hierarchical sensing with separated global read/write bitlines in different metal layers, a high-speed data-capture technique, a reduced-swing output buffer, and a high-sensitivity, high-bandwidth input buffer  相似文献   

13.
CAN总线/RS232接口的设计   总被引:2,自引:0,他引:2  
采用独立CAN控制器SJA1000作为CAN总线/RS232智能电平转换器的核心器件.介绍了SJA1000器件性能,重点介绍节点硬件设计,基于CAN协议栈的节点应用程序设计,软件包括CAN节点初始化、RS232报文发送、RS232报文接收、CAN报文发送和CAN报文接收,并在Keil C51编译器上编译、调试,大大提高了系统设计的实用性.  相似文献   

14.
A bandpass Σ-Δ modulator is described in this paper that uses frequency translation inside the Σ-Δ modulator loop to take advantage of the attributes of both continuous-time and discrete-time circuits. A CMOS direct-conversion modulator digitizes a 200 kHz intermediate-frequency signal centered at 100 MHz and produces baseband I/Q outputs with a peak signal-to-noise ratio of 54 dB. Images due to I/Q mismatches are suppressed by 50 dB. This 0.35-μm digital CMOS chip operates from a 2.7/3.3-V supply, dissipates 330 mW, and occupies 3.2 mm2  相似文献   

15.
The need for an LSI chip for interfacing data acquisition and conversion devices to a VME bus are highlighted. The functions of such an interface chip in a data acquisition subsystem are explained. The architecture, the design considerations and the novel features of the chip, designed at CEERI, Pilani, are discussed and the floor plan and specifications are indicated.  相似文献   

16.
A 2.6 GByte/s megacell that interfaces to single or double byte wide DRAMs or logic chips is implemented using 0.35-0.18 μm CMOS technologies. Special I/O circuits are used to guarantee 800 Mbit/s/pin data rate. Microwave PC board design methodologies are used to achieve the maximum possible interconnect bandwidth  相似文献   

17.
An MIMD multiprocessor digital signal-processing (DSP) chip containing four 64-b processing elements (PE's) interconnected by a 128-b pipelined split transaction bus (STBus) is presented. Each PE contains a 32-b RISC core with DSP enhancements and a 64-b single-instruction, multiple-data vector coprocessor with four 16-b MAC/s and a vector reduction unit. PEs are connected to the STBus through reconfigurable dual-ported snooping L1 cache memories that support shared memory multiprocessing using a modified-MESI data coherency protocol. High-bandwidth data transfers between system memory and on-chip caches are managed in a pipelined memory controller that supports multiple outstanding transactions. An embedded RTOS dynamically schedules multiple tasks onto the PEs. Process synchronization is achieved using cached semaphores. The 200-mm2, 0.25-μm CMOS chip operates at 100 MHz and dissipates 4 W from a 3.3-V supply  相似文献   

18.
A fully integrated burst-mode GaAs MESFET optoelectronic integrated circuit (OEIC) receiver, 215 mil×109 mil, that has been designed and implemented for point-to-point data links for application as a phased-array antenna controller is described. The chip provides a low-cost means for passing 400-Mb/s antenna control information using fiber optics with a very low bit-error rate (BER). Approximately 350 source-coupled FET logic gates are present on the chip. A new data coding and timing recovery scheme that is highly tolerant to jitter over a wide bandwidth has been developed. The OEIC uses an on-chip metal-semiconductor-metal (MSM) photodiode with 0.12-A/W responsivity measured at 780 nm and was fabricated in a 1.0-mm GaAs MESFET manufacturing technology. The low capacitance semi-insulating GaAs substrate minimizes the coupling between analog and digital circuitry. The circuit operates from a single 5-V supply, consumes 1 W of power, and provides an 8-b CMOS output bus together with various utility flags. Optical sensitivity is estimated at -20 dBm for 10-14 BER  相似文献   

19.
A single-chip rendering engine that consists of a DRAM frame buffer, a SRAM serial access memory, pixel/edge processor array and 32-b RISC core is proposed for low-power three-dimensional (3-D) graphics in portable systems. The main features are two-dimensional (2-D) hierarchical octet tree (HOT) array structure with bandwidth amplification, three dedicated network schemes, virtual page mapping, memory-coupled logic pipeline, low-power operation, 7.1-GB/s memory bandwidth, and 11.1-Mpolygon/s drawing speed. The 56-mm2 prototype die integrating one edge processor, eight pixel processors, eight frame buffers, and a RISC core are fabricated using 0.35-μm CMOS embedded memory logic (EML) technology with four poly layers and three metal layers. The fabricated test chip, 590 mW at 100 MHz 3.3 V operation, is demonstrated with a host PC through a PCI bridge  相似文献   

20.
A modular architecture for a DRAM-integrated, multimedia chip with a data transfer rate of 6 to 12 Gbyte/s is proposed. The architecture offers the design flexibility in terms of both DRAM capacity and the logic-memory interface for use in a wide variety of applications. A DRAM macro built from cascadable DRAM bank modules having a 256-kb memory capacity and 128-b I/Os provides flexibility and reconfigurability of DRAM capacity and a high data transfer rate with an area of 6.4 mm2 /Mb. A data transfer circuit (called the “reconfigurable data I/O attachment”), which is attached to the I/O lines of the DRAM macro, provides a flexible logic-memory interface by changing the data-transfer routes between the DRAM macro and logic circuits in real time. A 6.4-Gbyte/s test chip (called the “media chip”) for three-dimensional computer graphics was fabricated to test the proposed design methodology. It integrates an 8-Mb DRAM and four pixel processors on an 8.35×14.6-mm chip by using a 0.4-μm CMOS design rule  相似文献   

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