原子力显微镜在聚合物膜研究中的应用

原子力显微镜（AFM）已被用来研究膜的孔径和孔径分布、膜孔的结构、表面粗糙度、表面接点结构、膜的表面整体形态、膜污染机制和膜材料的选择等7个方面。原子力显微镜作为一种崭新的、有效的物理观测工具，在聚合物膜研究方面仍具有应用潜力。     

Investigation of chromatin folding patterns by atomic forcemicroscopy

1IntroductionTounderstandthemechamsmsinvolvedingeneexpressionandinthestructuralorgAnzationofchlomatinineukaryoticnucleus,manyeffortshavebeendevotedtoinvestigatethestructuraldetailsofchromatinfoldingpatternsatthedifferentlevels.Amongalloftheusedmethods,theelectronmicroscopy(EM)hasbeenprovedtobeveryusefulinrevealingchromatinstructuraldetails.Somechromatinfoldingpatterns,suchasnucleosomes[1-3],30urnchlomatinfib..,[4]560-80urnchromatinfibersand100-130runcblomonemafibers[5'6]wererevealed,and200-40…     

碳微集团束的产生及其在CR-39中径迹的AFM观测

在HI－13串行加速器上实现了对碳微集团的加速，得到了MeV级的碳微集团束，对产生的碳的微集团束进行了测量并用它对CR＝－39塑料核径迹探测器进行了辐照，利用先进的原子力显微镜对C1和C2在CR－39中的径迹进行了观测。     

Influence of scanning force microscope loading force on measurement of ion—track diameter

Scanning force microscope(SFM) was operated in the lateral-force mode with different loading forces.The mica samples were irradiated by Se ions with a kinetic energy of 11.4MeV/u.The“full-height width“ and the “half-height width“ of track profiles were used to evaluate the ion-track diameter,For the former method,the average track diameter increases slowly with increasing loading force between SFM tip and sample.For the later method,the average diameters of ion track nearly keep a common value as the SFM loading force increases.     

The effects of the annealing time on helium implantation in Si

The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles.     

Sputtering and surface state evolution of Bi under oblique incidence of 120 keV Ar ions

The sputtering and surface state evolution of Bi/Si targets under oblique incidence of 120 keV Ar⁺ ions have been investigated over the range of incidence angles 0° ? θ_i ? 60°. Increasing erosion of irradiated samples (whose surface thickness reduced by ∼3% at normal incidence up to ∼8% at θ = 60°) and their surface smoothing with reducing grain sizing were pointed out using Rutherford backscattering (RBS), atomic force (AFM) and X-ray diffraction (XRD) techniques. Measured sputtering yield data versus θ_i with fixed ion fluence to ∼1.5 × 10¹⁵ cm⁻² are well described by Yamamura et al. semi-empirical formula and Monte Carlo (MC) simulation using the SRIM-2008 computer code. The observed increase in sputter yield versus incidence angle is closely correlated to Bi surface topography and crystalline structure changes under ion irradiation.     

Surface nanostructuring of SrTiO3 single crystals by slow highly charged ions and swift heavy ions

Single crystals of strontium titanate have been irradiated with both slow highly charged Xe ions extracted from an Electron Beam Ion Trap and swift heavy Xe ions. After irradiation, the crystals were investigated by scanning force microscopy in air. In both cases nanohillocks due to impact of individual projectiles were observed. This similarity originates from the fact that both swift heavy ions and slow highly charged ions initially transfer their energy to the electronic system of the target, leading to a localized region of high electronic excitation. This electronic excitation is subsequently transferred to the lattice atoms by electron-phonon coupling, leading to pronounced lattice heating. The formation of surface hillocks can then be ascribed to a melting process. We also present first evidence for the existence of a potential energy threshold for nanohillock formation on strontium titanate surfaces by slow highly charged ions.     

辐射损伤潜径迹的纳米尺度观测研究

综述了近年来用扫描隧道显微镜 (STM )和扫描力显微镜 (SFM)在原子水平上观测辐射损伤潜径迹的研究及进展。详述了辐射损伤潜径迹的形貌、损伤范围、损伤数密度、损伤几率等 ,对损伤潜径迹直径与能损的关系、损伤过程及各种可能的损伤机制进行了分析和讨论。     

晶体表面特性对PET探测器性能的影响

<正>电子发射断层成像(Positron Emission Tomography,PET)作为最灵敏和具有定量测量能力的功能分子影像技术,越来越广泛地应用于生物医学研究,如疾病的动物模型、新药物的研发和新治疗方法的评估等。提高探测器的性能是改进PET仪器性能的关键,PET探测器通常由分割的闪烁晶体阵列和光探测器组成,文中使用位置灵敏光电倍增管和不同晶体表面特性的硅酸钇镥((Lu,Y)2Si O5,LYSO)晶体阵列,对新型的双端读出三维PET探测器和传统的单端读出二维PET探测器的性能进行了测量。实验结果表明,对于双端读出PET探测器,两种晶体阵列提供相近的晶体分辨图和能量分辨率,但非抛光晶体阵列提供好的深度分辨率,双端读出PET探测器需要使用表面不抛光的晶体阵列;对单端读出PET探测器,抛光晶体阵列提供好的晶体分布图和能量分辨率,单端读出PET探测器需要使用表面抛光的晶体阵列。     

Studies on aggregation-propensities and secondary structural transformations of proteins

The insoluble and fibrillar aggregates of some proteins are thought to be the pathological cause of neurodegenerative diseases. The aggregation-propensities of different types of proteins were investigated by Thioflavine T fluorescence assay and atomic force microscopy imaging. Then, the structural transformations of the proteins from aqueous state to solid state were studied by circular dichroism spectroscopy. The results indicate that proteins of different secondary structure show variations in their aggregation-propensities, together with their various structural transformations from aqueous state to solid state. Our studies imply that the structural transformation of proteins from solution to solid state is closely associated with their aggregation-propensities, which will provide insight into the molecular mechanism of protein aggregation in neurodegenerative diseases.     

Nanoscale self-affine surface smoothing by ion bombardment and the morphology of nanostructures grown on ion-bombarded surfaces

Surface smoothing by ion-bombardment with the concomitant formation of self-affine fractal surfaces at nanometer length scales is reviewed. Results of investigation of the dependence of surface smoothing on ion fluence and the threshold fluence for the formation of self-affine surfaces are presented. Finally, the morphology of self-assembled nanostructures grown by molecular beam epitaxy on surfaces of different fractal dimensions is investigated via studies of the roughness scaling exponent and the correlation length. While the self-assembled Ge islands grown on a pristine Si(1 0 0) surface are square or rectangular shaped, those on the ion-irradiated surface are nearly diamond-shaped.     

First principle studies on the electronic structures and absorption spectra in KMgF3 crystal with fluorine vacancy

The experiments indicate that the perfect KMgF₃ crystal has no absorption in the visible range, however the electron irradiation induces a complex absorption spectrum. The absorption spectra can be decomposed by five Gaussian bands peaking at 2.5 eV (488 nm), 3.4 eV (359 nm), 4.2 eV (295 nm), 4.6 eV (270 nm) and 5.2 eV (239 nm), respectively. The purpose of this paper is to seek the origins of the absorption bands. The electronic structures and absorption spectra either for the perfect KMgF₃ or for KMgF₃: with electrical neutrality have been studied by using density functional theory code CASTEP with the lattice structure optimized. The calculation results predicate that KMgF₃: also exhibits five absorption bands caused by the existence of the fluorine ion vacancy and the five absorption bands well coincide with the experimental results. It is believable that the five absorption bands are related to in KMgF₃ crystal produced by the electron irradiation.     

电离辐射下双界面Si3N4/SiO2/Si的等离激元

用X光激发电子能谱(XPS)分析技术对Si3N4/SiO2/Si双界面系统经60Co电离辐照前后处于纯Si态的一级等离激元(定位于B.E. 116.95 eV)、处于SiO2态的一级等离激元(定位于B.E. 122.0 eV)和处于Si3N4态的一级等离激元(定位于B.E. 127.0 eV)进行了研究.实验结果显示:存在一个由Si3N4态等离激元和SiO2态等离激元构成的界面及由SiO2态等离激元和Si态等离激元构成的界面,在电离辐射的作用下,SiO2态-Si3N4态等离激元界面区中心向Si3N4态表面方向推移,同时SiO2态/Si3N4态等离激元界面区亦被展宽;电离辐照相当程度地减少位于SiO2态-Si态界面至Si衬底之间SiO2态的一级等离激元的浓度:同时偏置电场对SiO2/Si界面等离激元有显著作用.文中就实验现象以光电子能损进行了机制分析.     

Study on effects of swift heavy ion irradiation on the crystal structure in CeO2 doped with Gd2O3

To simulate the effects of Gd₂O₃-doping and high-energy fission products in UO₂, Gd₂O₃-doped CeO₂ pellets were irradiated with 200-MeV Xe¹⁴⁺ ions. Doping and irradiation effects were analyzed using X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS). The lattice constant of CeO₂ decreases and the local structure is disordered with increased doping levels. However, the irradiation induces an expansion of the lattice and a disordering of atomic arrangement near the Gd atoms. The effects of the irradiation become more pronounced with increasing Gd₂O₃-dopant levels. Our results are compared with those of a study involving Er₂O₃-doped CeO₂.