128×1元GaAs／AlGaAs多量子阱扫描红外焦平面的红外成像

研制成功了１２８×１元ＧａＡｓ／ＡｌＧａＡｓ多量子阱扫描型红外焦平面（ＦＰＡｓ），器件的响应率达到ＲＰ＝２．０２×１０＾６Ｖ／Ｗ，截止波长为λ＝８．６μｍ，根据常规的黑体探测率定义，得到器件的黑体探测率为Ｄｂ＝２．３７×１０＾６ｃｍ．Ｈｚ／Ｗ，并最终获得了清晰的曙物体残留热像图。     

双125mA、50MHz电流反馈放大器

ＬＴ１４９７双电流反馈放大器具有低功耗，高输出驱动，很好的视频特性和杰出的失真性能。其主要性能有：最小输出电流±１２５ｍＡ，每个放大器最大电源电流７ｍＡ（ＶＳ＝±５Ｖ），增益带宽５０ＭＨｚ（ＶＳ＝±１５Ｖ），转换速率９００Ｖ／μｓ（ＶＳ＝±１５Ｖ）...     

畅销产品

ＡＤ５２６软件可编程增益放大器特点·数字化可编程二进制增益１～１６·双片级联可实现二进制增益１～２５６·增益误差最大值０．０１％，Ｇ＝１，２，４（Ｃ级）最大值０．０２％，Ｇ＝８，１６（Ｃ级）温度漂移０．５ｐｐｍ／℃·快速建立时间１０Ｖ信号阶跃；在４．５μｓ内达０．０１％（Ｇ＝１６）增益变化：在５．６μ８内达０．０１％（Ｇ＝１６）·低线性误差；最大±０．００５％ＦＳＲ（Ｊ级）·优良的直流特性失调电压最大值：０．５ｍＶ（Ｃ级）失调电压漂移：３μＶ／℃（Ｃ级）·ＴＴＬ兼容数字输入；可提供ＳＭＤ军品ＡＤ…     

GaAs／AlGaAs多量子阱二维面阵红外探测器

本文报道１０×１６元二维面阵ＧａＡｓ／ＡｌＧａＡｓ多量子阱红外探测器的研究进展．通过表面光栅耦合，采用垂直入射的工作模式，在Ｔ＝８０Ｋ时探测率为２．９e１０ｃｍ·Ｈｚ（１／２）／Ｗ，电压响应率为１．３e４Ｖ／Ｗ．各测试单元间探测率和电压响应率的偏差小于１８％，串音小于０．４５％，在最大探测率偏置条件下，器件的暗电流密度为６．２e－）Ａ／ｃｍ２．     

多层梯度层InGaAs（P）InPSAGM雪崩光电二极管

本文报道采用液相外延（ＬＰＥ）生长和传统光刻制管工艺研制出引入多层（三层或三层以上）中间能带隙过渡的吸收区、倍增区分离的ＩｎＧａＡｓ（Ｐ）／ＩｎＰ雪崩光电二极管（简称ＩｎＧａＡｓ（Ｐ）／ＩｎＰＳＡＧＭＡＰＤ），其技术指标为：击穿电压ＶＢ＝４０～９０Ｖ；０．９ＶＢ时的暗电流Ｉｄ最小可小于１０ｎＡ；１．３μｍ时光响应度Ｒｅ＝０．６～０．８Ａ／Ｗ，倍增因子Ｍ≥２０（Ｍｍａｘ＞４０），过剩噪声因子Ｆ≌５和较宽频带响应特性。     

LT1780/LT1781双RS232驱动器/接收器

Ｔ１７８０／ＬＴ１７８１双ＲＳ２３２驱动器／接收器具有单５Ｖ电源、低功耗（只有４０ｍＷ）、±１５ｋＶＥＳＤ保护（在ＲＳ２３２线端不需要昂贵的ＴｒａｎｓＺｏｒｂｓ）。只用０．１μＦ外部电容器便可工作在１２０ｋＢａｕｄ（对于负载ＲＬ＝３Ｋ,ＣＬ＝２５００ｐＦ）,２５０ｋＢａｕｄ（对于负载ＲＬ＝３ｋ,ＣＬ＝１０００ｐＦ）。ＬＴ１７８０／ＬＴ１７８１与ＥＩＡＲＳ２３２标准是完全一致的。它的输出能承受±３０Ｖ而不损坏。在关闭或断电条件下其驱动器和接收器的输出处于高阻抗态。ＬＴ１７８０／ＬＴ１７８１的应用包…     

CATV光纤传输系统设计及维护

ＣＡＴＶ光纤传输系统设计及维护马伟宪根据以上分析，可以建立下面的光路损耗计算公式：Ｌ＿（ｏｓｓ）＝Ｌ·０．３５＋（１＋Ｌ／３）·０．０５＋２·０．３＋１０．ｌｏｇ（Ｎ％）＋０．５＝Ｌ·０．３５＋Ｌ·０．０５／３＋１０·ｌｏｇ（Ｎ％）＋１．１５（４）Ｌ...     

ROHM公司CD／CDROM用集成电路一览表

ＲＯＨＭ公司ＣＤ／ＣＤＲＯＭ用集成电路一览表ＣＤ信号处理品名电源电压（Ｖ）功能特点封装ＢＡ６３７６Ｋ３．１～３．８ＲＦ·ＴＥ·ＦＥ生成、探伤、ＡＰＣ适应电压输出拾波、可在低电压下工作、内设自动聚焦ＱＦＰ３２ＢＡ６３７７Ｋ３．１～５．５ＲＦ·ＴＥ·Ｆ...     

高性能GaAs／AlGaAs量子阱红外探测器的研制

ＧａＡｓ／ＡｌＧａＡｓ多量了阱结构的红外探测器是近几年出现的一种新型红外探测器。本文对基基本原理作了介绍。并报导了最新研制成果；Ｄλ＝１．４２×１０＾１１ｃｍＨｚ１／２Ｗ＾－１＝Ｒλ＝２．３２×１０＾６Ｖ／Ｗ，峰值响应为８．５μｍ的高性能ＧａＡｓ／ＡｌＧａＡｓ量子阱红外探测器。     

高迁移率Si／Si_（0．7）Ge_（0．3）／Si调制掺杂异质结构的生长和输运性质

采用计算机控制的快速辐射加热、超低压ＣＶＤ（ＲＲＨ／ＶＬＰ－ＣＶＤ）方法生长了Ｓｉ／Ｓｉ０．７Ｇｅ０．３／Ｓｉｐ－型调制掺杂双异质结构．研究了该结构的输运性质，其空穴霍尔迁移率高达３００ｃｍ２／Ｖ·ｓ（３００Ｋ，薄层载流于浓度ｐｓ为２．６e１３ｃｍ－２）和８４００ｃｍ２／Ｖ·ｓ（７７Ｋ，ｐｓ为１．１e１３ｃｍ－２）．     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks