The InSb on a piezoelectric Rayleigh wave amplifier

Results taken from monolithic acoustic surface-wave amplifiers which employ the interaction between carriers drifting in a semiconductor film and electric fields accompanying a Rayleigh wave propagating on a piezoelectric substrate are described. The experimental devices were fabricated in vacuum by flash evaporation of a InSb compound onto heated substrates of LiNbO3or Bi12GeO20. Theoretical and experimental amplifier results are presented for several different pulsed operating monolithic devices. The results include measurements of electronic and terminal gain, saturation power, and noise figure as a function of bias voltage, and gain and phase dispersion as a function of frequency. Results are also given for a two film device which uses field effect to alter the conductivity of the amplifier film. Results from continuously operating samples fabricated by etching the semiconductor to a strip 25 µm in width are summarized.     

The fabrication of thin-film bulk acoustic wave resonatorsemploying a ZnO/Si composite diaphragm structure using porous siliconlayer etching

Thin-film bulk acoustic wave resonators (FBARs) are used in monolithic microwave integrated circuits (MMICs) for semiconductor devices. FBARs are more attractive than surface acoustic wave resonators since they have the advantages of small size, low cost, and mass-production ability. In this letter, an FBAR with an air gap is fabricated by a surface micromachining technique which utilizes porous silicon layer (PSL) etching. This FBAR has a forward reflection coefficient of -18.912 dB when the thickness of the ZnO thin film measures 1 μm. The FBAR is composed of a piezoelectric zinc oxide (ZnO) thin film and top and bottom electrode thin films of Au(1000 Å)/Ni-Cr(50 Å). The ZnO thin film is deposited by RF magnetron sputtering. This fabrication process is compatible with conventional IC processes, thereby enabling the development of monolithic-integrated FBAR's on Si or GaAs substrates     

Si基薄膜体声波谐振器(FBAR)技术研究

介绍了目前国际上主流的薄膜体声波谐振器(FBAR)技术,分析了FBAR谐振器的结构设计和压电薄膜选取方案。依托Si基半导体工艺平台,采用牺牲层技术完成了空气腔的制作,利用磁控反应溅射技术制备的高质量(002)AlN薄膜作为压电材料,基于FBAR多层立体结构,实现了空气腔型FBAR谐振器的制作工艺,实际制作了FBAR谐振器样品。实测FBAR谐振器样品典型指标:Q值≥300,谐振频率为1.46 GHz,谐振频率覆盖L波段。测试结果验证了设计方案及工艺路径的正确性与可行性,为后续产品的研发提供了技术基础。     

LGS声表面波双模温度传感器研究

该文研究了基于硅酸镓镧（La3Ga5SiO14,LGS）压电衬底的声表面波(SAW)谐振器的瑞利波模式谐振频率和体声波模式谐振频率的温度特性,并利用这两种模式构建了一种宽温度范围的具有线性输出特性的温度传感器。研究结果表明,基于LGS衬底的谐振器的瑞利波模式和体波模式的谐振频率均与温度成二次函数关系,且二阶频率温度系数接近,利用此特性构建的双模温度传感器测试结果和热电偶测试结果基本一致。该文提出的这种双模温度传感器可获得全温度范围的线性输出特性,可应用于LGS高温SAW温度传感器。     

声表面波跨越式输运数字微流体

研究了声表面波实现数字微流体在压电基片上跨越障碍物的方法。在128°-YX-LiNbO3压电基片上采用微电子工艺制作了中心频率为25.5 MHz的叉指换能器和反射栅,在声传播路径上涂覆Teflon AF 1600疏水薄膜,聚二甲基硅氧烷垫块贴合于压电基片上。经功率放大器放大的射频信号加于叉指换能器激发声表面波,并作用在声路径上的数字微流体,在其内产生声流,当瞬间减少射频信号功率,部分液体因惯性力大于表面张力而飞离微流体,跃过聚二甲基硅氧烷障碍物,实现在压电基片上跨跃障碍输运。采用油包红色染料溶液微流体进行了实验,结果表明,当射频信号功率从12.3 dBm瞬间下降到-3.98 dBm时,油包红色染料溶液微流体可跃过高度1 mm的障碍物。     

基于FEM/BEM方法的表面声场体波模式数值研究

采用有限元/边界元法(FEM/BEM),分析了有限长叉指换能器在半无限大压电晶体128°YX-LiNbO3中激发的表面波和体波在晶体表面上的分布情况。通过对频域内表面声场的分析,得到了表面上三个位移场分量含有的声波模式,对相应时域内各场分量的体波脉冲振幅进行处理,详细分析了各个模式的体波脉冲振幅随时间的分布关系。结果表明,除Rayleigh型表面波外,各场分量中还包含不同成分和比例的体波模式;在场分量1和场分量3中占主要成分的准纵波,以及在场分量2中占主要成分的准慢切变波,在表面上其传播损耗以指数衰减。     

Acoustoelectric interactions in acoustic-surface-wave devices

The principles of a wide range of acoustic-surface-wave devices employing acoustoelectric interactions with semiconductors are described. It is shown that acoustoelectric amplifiers can increase the dynamic range of a delay-line filter. Such devices have been operated on a CW basis and are beginning to become practical. The acoustic convolver and its derivative devices, the optical scanner, the acoustic focusing and imaging devices, and the storage correlator are described. Several of the signal processing applications of the convolver are discussed. Various types of constructional techniques, including the air gap convolver and acoustoelectric amplifier, the strip coupled and external diode convolvers, the use of piezoelectric semiconductors, deposition of a semiconductor on a piezoelectric substrate, and deposition of a piezoelectric material on a semiconducting substrate are discussed.     

AlN薄膜异质结构声波激发特性研究

该文分别开发了两种基于AlN压电材料和原子数分数为10%的Sc掺杂AlN压电材料的薄膜叠层异质谐振器。通过有限元仿真和实验对比分析了器件的频率温度性能和Sc掺杂对谐振器声激励的影响。结果表明,Sc掺杂可能会影响压电薄膜叠层谐振器所激励声波的谐振频率、机电耦合系数和对应的频率温度系数(TCF),且对所激励声波的正反谐振点的TCF影响不同。此研究在传感及滤波器件领域极具应用潜力。     

An acoustoelectric transistor

A new kind of three-terminal amplifying device that works on the principle of nonlinear acoustic wave amplification is described. The device has an advantage of simple transistor-like operation while maintaining the long delay times of an acoustic wave amplifier. A piezoelectric semiconductor with three ohmic contacts forms the basic unit; transducers are not required. A theory of device operation, based on a linearized small-signal analysis of acoustic energy transport, is presented along with the resulting analytical expressions for the dc and RF gain and cutoff frequency. Experimental results are given for a test device made of epitaxial GaAs.     

多层压电结构中声表面波特性的计算

The propagation properties of the surface acoustic waves(SAWs) in a ZnO-SiO2-Si multilayered piezoelectric structure are calculated by using the recursive asymptotic method.The phase velocities and the electromechanical coupling coefficients for the Rayleigh wave and the Love wave in the different ZnO-SiO2-Si structures are calculated and analyzed.The Love mode wave is found to be predominantly generated since the c-axis of the ZnO film is generally perpendicular to the substrate.In order to prove the calculated results,a Love mode SAW device based on the ZnO-SiO2-Si multilayered structure is fabricated by micromachining,and its frequency responses are detected.The experimental results are found to be mainly consistent with the calculated ones,except for the slightly larger velocities induced by the residual stresses produced in the fabrication process of the films.The deviation of the experimental results from the calculated ones is reduced by thermal annealing.     

A tunable filter with collinear acoustooptical TE-TM modeconversion in a GaAs-AlAs multiquantum-well waveguide

We investigate theoretically an acoustooptic tunable filter (AOTF) based on TE-TM mode conversion by collinear acoustooptic interaction, using the high form birefringence that occurs in a GaAs-AlAs multiquantum-well (MQW) rib waveguide. Mode conversion is achieved using a transverse piezoelectric surface acoustic wave. We propose to use a piezoelectric layer (ZnO or AlN) of 6-mm symmetry, which can be deposited by plasma-enhanced chemical vapor deposition. The c axis is then parallel to the plane of the layer. Under this condition, a transverse piezoelectric surface acoustic wave excited by inderdigital electrodes can propagate within the GaAs-AlAs MQW optical waveguide. TE-TM conversion is then possible with a relatively low acoustic frequency (some tens of megahertz), yielding a high diffraction efficiency and a figure of merit 14 times higher than that of conventional LiNbO₃ filters based on AOTFs     

High frequency ZnO-SiO2-Si surface acoustic wave convolvers

The separate comb grating transducer configuration is used in the fabrication of high frequency convolvers in the metal-ZnO-SiO2-Si surface acoustic wave device structure. A Rayleigh convolver with an operating frequency of 285 MHz and a Sezawa convolver with an operating frequency of 355 MHz are reported.     

单晶LN BAW谐振器有限元仿真研究

利用离子注入剥离法(CIS)制备的铌酸锂(LN)压电薄膜可用于制备体声波(BAW)器件,近年来备受关注。滤波器的指标与谐振器的性能密切相关,但基于LN单晶薄膜的BAW谐振器,对其结构的仿真优化还未有较深入的报道。该文以LN单晶薄膜为核心压电层材料,构建了固态反射型(SMR)单晶薄膜谐振器有限元仿真模型,对其压电层厚度和布喇格反射层厚度进行了设计,并重点针对谐振器上电极的台阶结构进行了二维模型仿真,为高频LN BAW滤波器的制备提供了理论依据。     

Characteristics of Microwave Acoustic Transducers for Volume Wave Excitation

Transducers which utilize acoustoelectric conversion in a piezoelectric film, plate, or surface have found wide application for generating planar volume-acoustic waves at microwave frequencies. A review is given of the electrical impedance, conversion loss, and bandwidth characteristics for piezoelectric film or plate transducers which vibrate in one-dimensional thickness extensional or shear modes. The transducer response is related to the electric and acoustic parameters that describe the transducer configuration, and experimental examples are given to illustrate the operation of typical transducer configurations. Methods for achieving low conversion loss and/or broad bandwidth are discussed and experimental examples given. Tables of bulk material constants are supplied for commonly used plate and film devices, and transducer fabrication methods are reviewed. Other types of volume wave transducers, such as those utilizing a single piezoelectric surface, a diffusion layer in a piezoelectric semiconductor, or mode conversion at a boundary are also briefly discussed.     

薄膜体声波谐振器调频工艺研究

薄膜体声波器件具有体积小及性能高等优势,相关产品已被广泛应用于移动通信市场。薄膜体声波谐振器(FBAR)电极层和压电层等声学层的厚度、材料是影响谐振频率的主要因素。该文分析了FBAR调频的必要性、原理及扫描刻蚀的工作方式,研究了调频层薄膜在不同刻蚀功率时对器件频率的影响。通过对FBAR器件进行调频,频率均匀性提高了6.5倍,频率分散性得到显著改善。     

K波段宽带声体波延迟线的设计与优化

通过优化K波段声体波换能器设计,突破200 nm极薄压电薄膜制备和微带线匹配等技术,研制了K波段体声波延迟线样品。研究结果表明,样品的中心频率大于23 GHz,带宽大于1 000 MHz,延迟时间295 ns,外形尺寸约25 mm×16 mm×14 mm,是目前国内外已报道的工作频率最高的声体波延迟线。     

Trapping of acoustic energy in composite resonators based on cubic crystals

An analytic solution is obtained for the problem of acoustic energy trapping in a microwave composite resonator containing a thick cubic-crystal plate with a deposited piezoelectric film and electrodes. It is found that rigorous account of the wave properties of the piezoelectric film and electrodes is of principal importance for such a structure. The problem is solved in the case when the operating frequency is a high-order harmonic of the fundamental frequency of the resonator and the resonator is much thicker than the other layers. The formulas obtained make it possible to analyze the feasibility of a multilayer resonator structure with a high Q-factor at a desired frequency.     

表面波飞机结冰传感器的研究

首先分析了覆盖冰层的各向同性半无限大弹性体中的声表面波(SAW),求得了声表面波波速与冰层厚度间的关系.结果表明,当冰层厚度为0时,求得的波速与没有冰层覆盖相对应的半无限大弹性体的声表面波波速相同;当冰层厚度不断增加时,求得的声表面波波速趋向于冰层中的波速.随后分析了基体是各向同性无限大弹性板的情况.计算结果表明,由于弹性板与冰层的相互作用,实际振动会出现多个声表面波模态和相应的波速.     

Semiconductor surface study by transverse acoustoelectric voltage using surface acoustic waves

Electrical properties of semiconductor surfaces can be determined by measuring the transverse acoustoelectric voltage. This voltage is produced by the interaction of the surface acoustic wave propagating on a piezoelectric substrate and the carriers on semiconductor surface placed in proximity. Using 110 MHz LiNbO₃ delay lines, the transverse acoustoelectric voltage has been measured across CdS and Si, the surface properties of which are varied by different light illumination. Detailed study of the voltage waveform reveals the type of traps and the amount of charge in the traps. The method is simple, needs no contacts to the sample, and is sensitive.     

Acoustooptic modulators for single-mode fibers

The design of in-line acoustooptic modulators for single-mode fibers is discussed. The basic configuration consists of a cylindrically symmetric piezoelectric transducer fabricated on the fiber surface, so that the fiber itself acts as a cylindrical acoustic resonator. Depending on the fiber design, the acoustic wave can induce phase, birefringence, or polarization modulation of the light in the fiber. Pairs of the polarization modulators in series can be used to shift the optical frequency. Factors affecting the performance of all of these devices are discussed.