CMOS magnetic-field sensor system

A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV/μT (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) at μ_r=1) and its temperature gain is below 260 ppm/°C in the range between -50°C and +100°C     

Radiation effects on scientific CMOS image sensor

A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic before and after the experiments have been comprehensively analyzed. The performance of the CMOS image sensor with the radiation hardened design technique realized total-dose resilience up to 300 krad(Si) and resilience to single-event latch up for LET up to110 MeV·cm²/mg.     

A CMOS magnetic field sensor

The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.     

Nano Watt CMOS temperature sensor

In this paper, an ultra-low power embedded full CMOS temperature sensor based on sub-threshold MOS operation is designed in a 0.18 μm CMOS technology. It focuses on temperature measurement using the difference between the gate-source voltages of transistors operated in sub-threshold region that is proportional to absolute temperature. By using the proposed scheme the wide range supply voltage of 0.6–2.5 V with inaccuracy of +0.55 °C/V and total power consumption of merely 7 nW at 120 °C is achieved. The performance of the sensor is highly linear and the predicted temperature error is ±2 °C in the range of 10–120 °C. The sensor occupies a small area of 67 × 31 μm². Ultra-low power consumption of the sensor illustrates proper operation for low power applications such as battery powered portable devices, passive RFID tags and wireless sensor network applications.     

CMOS integrated silicon pressure sensor

The sensor described includes a four-arm piezoresistance bridge circuit, an amplifier, and a bridge excitation circuit. This circuit is used to stabilize changes in sensitivity due to variations in temperature and supply voltage. The sensor was fabricated using a self-aligned double-poly Si gate p-well CMOS process combined with an electrochemical etch-stop technique using N/SUB 2/H/SUB 4/-H/SUB 2/O anisotropic etchant for the thin-square diaphragm formation. The silicon wafer was electrostatically adhered to a glass plate to minimize thermally induced stress. Less than a /spl plusmn/0.5% sensitivity shift and less than a /spl plusmn/5-mV offset shift were obtained in the 0-70/spl deg/C range, with a 1-V/kg/cm/SUP 2/ pressure sensitivity. By using a novel excitation technique, a sensitivity change of less than /spl plusmn/1.5% under a /spl plusmn/10% supply voltage variation was also achieved.     

CMOS active pixel image sensor

A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 μm double-poly, double-metal foundry CMOS process and is realized as a 128×128 array of 40 μm×40 μm pixels. The sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications     

Smart CMOS image sensor arrays

In this paper, we present several smart image sensor arrays intended for various applications. We discuss the realization of image sensors in CMOS technology and show some examples of one-dimensional (1-D) and two-dimensional (2-D) smart image arrays     

晕苯增强CMOS图像传感器

由于紫外光在硅中的穿透深度有限,以及多晶硅栅极对紫外光的吸收,导致传统的硅基CMOS图像传感器在紫外光波段的响应不高。在此,本文选择一种低成本的下转换法来提升CMOS图像传感器的紫外响应能力,采用真空热蒸发法分别在石英衬底和CMOS图像传感器的像敏面上蒸镀了晕苯薄膜,并对薄膜的光学性能、红外光谱、光稳定性和热稳定性进行了研究。实验结果表明,晕苯薄膜能吸收紫外光并发射出500 nm的绿色荧光,可以与CMOS图像传感器的光谱响应峰值很好地匹配;同时,发现晕苯红外吸收光谱的实验值和计算值基本吻合;薄膜在200 ℃温度下退火20 min后,其发射峰的荧光强度保持在原来的95.7%;在280 nm激发波长照射大约60 min后,发光强度呈指数衰减至初始值的64%。采用CMOS单色相机在可见光（400~780 nm）和紫外光（365 nm）下定性分析了薄膜的紫外增强效果,发现蒸镀晕苯薄膜后的CMOS单色相机可以提高对紫外光的灵敏度。     

基于CMOS图像传感器的多斜率积分模式

CMOS图像传感器由于器件本身的特点,相比CCD传感器,其动态范围较小。以CYPRESS公司生产的高性能CMOS图像传感器IBIS5-A-1300为研究对象,对其多斜率积分原理进行研究,提出了采用同步快门多斜率积分的方法来扩展CMOS图像传感器的动态范围。以FPGA+DSP为系统的硬件处理平台,给出了多斜率积分驱动时序的具体设计思路和方法,并在QuartusⅡ7.0环境下对所设计的驱动时序进行功能仿真。采用所设计的多斜率积分时序驱动,将CMOS图像传感器的动态范围由原来单斜率积分模式下的64 dB扩展到了90 dB。实验结果表明,采用多斜率积分模式可以实现动态范围扩展的要求。     

CMOS图像传感器发展现状

文章主要介绍了ＣＭＯＳ图像传感器的结构、单元电路、发展背景及其发展现状。