不受温度影响的电流源

为了改进电流源电路的温度特性,提出了一种对温度不敏感的高精度电流源的实现方案。与现有的电路相比．本电路并没有改变原来的主电路结构．而仅仅在参考电流源中增加了一个小电阻。它在零下50℃到150℃的大范围内的温度效应被限制在1％-2％。该电阻在芯片上是利用闲置区域布线的,因此并不会增加集成电路的制造成本。另外．该电阻是连接在恒流源中,不会增加芯片的功耗。     

一种新的电阻元件等效方法及其应用

摘要：利用串联电阻的等效电阻等于各电阻之和、并联电阻的等效电导等于各电导之和的结论．导出了电阻等效的新结论,即任意电阻可以等效为一个电阻与一个电压控制电压源的串联,也可以等效为一个电阻和一个电流控制电压源的串联;任意电阻可以等效为一个电阻和一个电流控制电流源的并联,也可以等效为一个电阻和一个电压控制电流源的并联。本文给出了这种等效方法的理论证明,并以实例说明了电阻等效的应用。     

Increased resistance in p-type poly-Si resistors by thermal annealreduction interface charge

The effect of thermal annealing on characteristics of p-type poly-Si thin-film resistors was investigated. A significant increase was observed as the source/drain anneal temperature or anneal time was increased. The increased resistance is due to a reduction in current component arising from field-enhanced current via grain-boundary trap states at the drain end of the resistor. The reduction is this field-enhanced current arises primarily from a reduction of positive charge density at the top and bottom oxide/poly-Si interfaces of the thin-film resistor (and thus a reduction in the magnitude of the drain electric field) with increased annealing temperature and time     

高稳定度光纤耦合半导体激光器恒流源电路设计

光纤耦合半导体激光器多用作高功率光纤激光器的泵浦源,它对电流波动十分敏感,为了确保其波长与输出功率的正常,设计了一款高稳定度恒流源电路。此恒流源电路采用闭环反馈控制,使MOS管工作在放大区来输出恒定电流,采用带有透孔的厚膜电阻作为采样电阻,其耐压高、阻值范围宽、散热能力强,大大提高了恒流源电路的稳定性,电路实现0~20 A电流可调。鉴于一般恒流源电路启闭时间较长,此电路在运放与MOS管之间加入晶体管来放大信号,缩短电路启闭时间,同时在设计中增加模拟开关电路来精确控制信号。经实验测试,此恒流源电路开启、关闭耗时较短,分别是4.5 ms与6.5 ms,恒流板结构散热能力较强且稳定,耐高温性好,电流稳定度较高,达到10-3量级,使用此电路设计的电源作为光纤耦合半导体激光器的激光电源时,激光器的中心波长与输出功率均较为稳定。     

一种新型高精度高温度稳定性恒流源研究

研究一种应用混合集成电路技术实现的新型高精度和高温度稳定性的恒流源,以适应当前系统对恒流源高精度、高温度稳定性和较大电流的需求。在详细分析电路结构和工作原理的基础上,讨论如何提高电路的精度和温度稳定性,并给出具体的解决方案,对关键部分给出了设计电路图,最后对采样电阻的设计和布线艺术给出了合理的方案。投片测试分析表明:该设计安全可靠,达到高温度稳定性和高精度设计目标。该电路具有较小的体积和较好的性能,满足型号系统的要求。灵活的设计方式使其具有较好的使用价值和应用前景。     

A Model for Temperature Insensitive Trimmable MOSFET Current Sources

High-precision current-steering digital-analog converters (DACs) can only be created by limiting variations between the outputs of individual current sources within each DAC. One possible approach to limit these variations is to create a trimmable circuit which includes a floating-gate device acting as an analogue nonvolatile memory. Results are presented which show that one type of trimmable current source has a bias condition at which its output current is both trimmable and robust to temperature variations. A model of this potentially useful behavior is presented which suggests that it arises from a combination of the temperature dependence of a MOSFET and the modulation of its source voltage caused by a second MOSFET acting as a voltage controlled resistor.     

Simulated turn-off of 4H-SiC gate turn-off thyristors with gateelectrodes on the p-base or the n-base

Turn-off simulations of a 4H-SiC GTO thyristor structure having a gated p-base and p-type substrate are compared with that having a gated n-base and n-type substrate. Two gate drive circuits are considered, one with a voltage source and resistor between the gate and adjacent emitter region, and the other with a voltage source and resistor between the gate and farthest emitter region. The gated n-base thyristor's substrate current increases atypically before the device turns off. Also, the gated n-base structure turns off when the gate circuit is connected directly to the emitter region furthest from the gate region, but the gated p-base structure does not. Furthermore, turn-off gain is lower for the gated n-base structure due to mobility differences as demonstrated by current-voltage (I-V) and current versus time (I-t) curves     

微桥电阻的辐射特性研究

随着微机械加工技术的发展,电阻阵列成为一种最具发展潜力的动态红外景象产生器。在半实物（HWIL）仿真系统中,它被用来对红外摄像机、导弹寻的器以及各种红外探测系统的实时性能进行测试和评估。电阻阵列采用电阻元作为其微辐射元,当电流流过时。电阻元产生热量进而产生红外辐射。通过控制流过每个电阻元的电流就可以控制电阻的温度,从而达到显示红外图像的目的。介绍了利用表面微机械加工技术研制的电阻阵列基本组成单元——微桥电阻的辐射特性．主要包括：微桥电阻介质膜红外光谱辐射率、等效黑体辐射温度以及温度分辨率等,并通过分析得出该微桥电阻具有低功耗、高等效黑体辐射温度的特点。能够满足中波和长波红外目标模拟的需要。     

基才DC／DC开关稳压器的大功率LED恒流驱动设计

针对当前市面上DC／DCLED（发光二极管）专用恒流控制芯片价格高、不易购买的情况,阐述了基于市面常用DC／DC稳压器的高效率恒流稳压电源的通用设计方法,并给出了基于LM2596-ADJ开关稳压器的设计实例。与传统的恒压电源相比．电路增加了阻值很小的采样电阻以及由通用运算放大器组成的电压反馈回路和电流采样、放大反馈回路．同时增加了电压、电流反馈回路自动切换电路,使电路能根据负载大小在恒压和恒流模式之间自动切换。实验数据表明．基于该方法设计的LED恒流稳压电源恒流精度高,误差小于1％,效率超过87％,且电路工作稳定,元件取材广泛．价格低廉。     

一种基于BCD工艺的宽压-宽温电流基准电路

设计了一种基于BCD工艺的宽压-宽温电流基准电路.利用片上多晶硅电阻的温度系数受工艺影响较小的特点,选定其为基准电流定义单元.分析片上电阻温度特性,并设计与其温度系数相等的参考电压,加载到电阻上,从而实现了温度系数很低的基准电流.分析了高温下三极管寄生元件漏电现象,通过添加补偿管,提高了基准电流在高温下的稳定性.电流基...     

电阻阵列动态红外景像产生器

基于微机械加工技术发展起来的电阻阵列是动态红外景像产生器的一种。它可在半实物（HWIL）仿真系统中用来对红外摄像机、导弹寻的器以及各种红外探测系统的实时性能进行测试和评估。电阻阵列是以电阻元件为微辐射元,当电流流过时,电阻元产生热量,从而产生红外辐射。通过控制流过每个电阻元的电流就可以控制每个电阻的温度,从而达到显示红外图像的目的。电阻阵列具有其他红外景像产生器所不具有的特点,低功耗、大温度范围、高分辨率、高占空比等,适合于各种红外目标的模拟。文另介绍了其基本原理、发展现状、关键技术及发展动态等,给出了一些器件的典型参数。     

热温差型微流量传感器的温度补偿方法研究

热温差型微流量传感器的性能受多个因素的影响,如环境温度的变化、供电电源的波动、加热电阻的冷却和导线电阻的引入等。通过ANSYS软件对环境温度及加热电阻温度的改变进行了有限元仿真,发现当两者的温度差值为恒定值时,传感器的输出信号偏差较小。从环境温度与加热电阻温度差值恒定的思路出发,结合目前补偿方法存在的不足——导线引入误差、环境温度检测电阻的自热效应使其检测出错误的环境温度、加热电阻受被测流体冷却后使测量发生偏差以及供电电源波动的影响等,提出了一种可行的补偿方案,包括对前端信号采集电路的优化和后续单片机电路的设计,使影响流量传感器测量性能的诸多因素被削弱,且控制也更灵活。通过分析验证,在相同测试条件下,所提出的方法比常用补偿方法的测试精度高出约1.2%,误差为0.2%。     

Emitter ballasting resistor design for, and current handlingcapability of AlGaAs/GaAs power heterojunction bipolar transistors

A systematic investigation of the emitter ballasting resistor for power heterojunction bipolar transistors (HBTs) is presented. The current handling capability of power HBTs is found to improve with ballasting resistance. An equation for the optimal ballasting resistance is presented, where the effects of thermal conductivity of the substrate material and the temperature coefficient of the ballasting resistor are taken into account. Current levels of 400 to 800 mA/mm of emitter periphery at case temperatures of 25 to -80°C for power AlGaAs/GaAs HBTs have been obtained using an on-chip lightly doped GaAs emitter ballasting resistor. Device temperature has been measured using both an infrared microradiometer and temperature-sensitive electrical parameters. Steady-state and transient thermal modeling are also performed. Although the measured temperature is spatially nonuniform, the modeling results show that such nonuniformities would occur for a uniform current distribution, as would be expected for an HBT with emitter ballasting resistors     

一种解决HBT功率器件热失控的新方法

提出了一种具有强耦合作用的新型镇流电阻器网络,该镇流电阻器网络为树形拓扑结构,对其工作原理进行了详细分析.基于COMSOL MULTIPHYSICS软件的仿真结果表明:该镇流电阻器网络具有自适应功能,通过其耦合作用可以自动调整HBT并联阵列中晶体管的电流,使高温HBT的热量向低温HBT传递,获得更为均匀的温度分布,较好...     

Pulse current trimming of polysilicon resistors

The practical application of pulse current trimming of polysilicon resistors has been investigated and successfully implemented in large scale integrated circuit production. In-package pulse current trimming of heavily doped polysilicon resistors allows precise control of the final resistor value and can effectively compensate for process variation in polysilicon sheet resistance. The technique requires no additional process complexity, is layout efficient, remarkably accurate, and is quick and inexpensive from a test perspective. Resistance reduction occurring during the trim process is shown to be reversible to a small, but usable, extent for n-type polysilicon. Thermal modeling of the resistor trim process shows that the peak temperature reached within the polysilicon film must exceed the highest temperature encountered during wafer fabrication before any permanent resistance change occurs. As the resistor is further trimmed, the film temperature approaches the melting point of silicon     

A precision reference voltage source

With increasing temperature the base-emitter voltage of a transistor with a constant current decreases, while the difference in base-emitter voltages of two identical (integrated) transistors having a constant current ratio increases. From the sum of the two voltages a nearly temperature- independent output voltage is obtained if this sum equals the gap voltage of silicon. A reference voltage source of 10 V based on the principle is described. The reference part of the circuit is an integrated circuit, and thin-film resistors with a small relative temperature coefficient are used. An operational amplifier and a few resistors and capacitors complete the circuit. The source has a parabolic temperature characteristic and the temperature peak can be controlled by resistor adjustment. A change of /spl plusmn/10 K in respect of the peak temperature causes an output voltage change of -250 /spl mu/V, while a change of /spl plusmn/30 K causes a change of -2.2 mV. A long-term stability of 10 ppm/month was measured. The circuit can compete with the best available Zener diode sources, and has the added advantage that practically no selection is necessary.     

Limit current surges with +TC resistors

The characteristics and design of positive temperature coefficient (PTC) resistors, which are used in current-limiting circuits that do not isolate completely the protected circuit from its power source, are described. The way in which the PTC resistor, a conductive polymer blend of specially formulated plastics and various conductive materials, works is outlined. As an example of the specification process for a PTC circuit protector, the use of a conductive polymer PTC resistor to protect an outlet circuit in a personal computer used for connecting a keyboard is considered     

一种低温漂电流感应电路的分析与设计

提出了适用于电流模DC-DC转换器的低温漂高精度的电流感应电路,用MOS管线性电阻和负温度系数电阻一起组合来实现。所设计电路应用于一款DC-DC升压转换器中,并在CSMC0.5μm工艺上进行流片验证,在输入电压1.8V,输出3.6V的条件下,带载能力达到0.8A,不同温度环境下,电感峰值电流限流值维持在2.1A左右,达到了很好的感应效果。     

Monolithic SiGe HBT Feedforward Variable Gain Amplifiers for 5 GHz Applications

Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled‐emitter resistor and the other using an HBT‐based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain‐control range of 23 dB with a control‐voltage range from 0.4 to 2.6 V. The gain‐tuning sensitivity is 90 mV/dB. At V_CTRL= 2.4 V, the 1 dB compression output power, P_1‐dB, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and ‐1.8 dBm and 71mA in a VGA with a constant current source, respectively.     

小型高精度恒温系统的研究

介绍一种小型高精度恒温控制系统,该系统以AT89C51单片机为控制核心,由前端信号调理电路和放大电路组成,用A级Pt100作为温度传感器,针对铂电阻测温存在非线性的特点,从软件方面进行校正,以保证测量准确度。同时在算法控制上采用比传统的PID更加好的自校正PID算法。控温采用半导体制冷器。经对研制的小型恒温系统进行反复调试,并测量了大量的实验数据,证明其在理论和实验上都具有可靠性。实验结果表明,不仅测量和控制方法是可行的,而且控制精度达到了较高的水平。